CN101432883B - 晶体管元件及其制造方法以及发光元件和显示器 - Google Patents

晶体管元件及其制造方法以及发光元件和显示器 Download PDF

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Publication number
CN101432883B
CN101432883B CN200780010021XA CN200780010021A CN101432883B CN 101432883 B CN101432883 B CN 101432883B CN 200780010021X A CN200780010021X A CN 200780010021XA CN 200780010021 A CN200780010021 A CN 200780010021A CN 101432883 B CN101432883 B CN 101432883B
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CN101432883A (zh
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横山正明
中山健一
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Dai Nippon Printing Co Ltd
Ricoh Co Ltd
Sumitomo Chemical Co Ltd
University of Osaka NUC
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Dai Nippon Printing Co Ltd
Osaka University NUC
Ricoh Co Ltd
Sumitomo Chemical Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/90—Applications
    • C08G2261/92—TFT applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Bipolar Transistors (AREA)
  • Electroluminescent Light Sources (AREA)
CN200780010021XA 2006-03-22 2007-03-22 晶体管元件及其制造方法以及发光元件和显示器 Expired - Fee Related CN101432883B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP078237/2006 2006-03-22
JP2006078237A JP5182775B2 (ja) 2006-03-22 2006-03-22 トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ
PCT/JP2007/055891 WO2007119490A1 (ja) 2006-03-22 2007-03-22 トランジスタ素子及びその製造方法並びに発光素子及びディスプレイ

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CN2010106039312A Division CN102130299A (zh) 2006-03-22 2007-03-22 晶体管元件及其制造方法以及发光元件和显示器

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CN101432883A CN101432883A (zh) 2009-05-13
CN101432883B true CN101432883B (zh) 2011-08-10

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CN2010106039312A Pending CN102130299A (zh) 2006-03-22 2007-03-22 晶体管元件及其制造方法以及发光元件和显示器
CN200780010021XA Expired - Fee Related CN101432883B (zh) 2006-03-22 2007-03-22 晶体管元件及其制造方法以及发光元件和显示器

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US (2) US8120242B2 (enExample)
EP (1) EP2009700A4 (enExample)
JP (1) JP5182775B2 (enExample)
KR (1) KR101255407B1 (enExample)
CN (2) CN102130299A (enExample)
TW (1) TW200810111A (enExample)
WO (1) WO2007119490A1 (enExample)

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JP4900160B2 (ja) * 2007-09-26 2012-03-21 大日本印刷株式会社 発光素子及び発光表示装置
EP2223357B1 (en) * 2007-12-14 2016-08-10 Philips Intellectual Property & Standards GmbH Organic light-emitting device with adjustable charge carrier injection
TWI425693B (zh) * 2008-03-14 2014-02-01 Univ Nat Chiao Tung Vertical drive and parallel drive organic light emitting crystal structure
TWI384666B (zh) * 2008-04-10 2013-02-01 Univ Nat Chiao Tung Light detection device structure
JP5352118B2 (ja) * 2008-05-07 2013-11-27 独立行政法人科学技術振興機構 有機トランジスタ素子と電子・電気機器
KR101468592B1 (ko) * 2008-06-25 2014-12-05 삼성전자주식회사 유기 광전 변환막, 광전 변환 소자 및 이미지 센서
KR101045264B1 (ko) * 2008-09-09 2011-06-29 네오뷰코오롱 주식회사 디스플레이 장치, 이를 구비하는 모바일 기기 및 디스플레이 제어 방법
JP5370810B2 (ja) * 2008-09-19 2013-12-18 富士電機株式会社 トランジスタ素子およびその製造方法
JP5534702B2 (ja) * 2009-04-14 2014-07-02 日本放送協会 有機縦型トランジスタ
JP5477841B2 (ja) * 2009-05-11 2014-04-23 健一 中山 トランジスタ素子
KR101394868B1 (ko) * 2009-09-04 2014-05-14 겐이치 나카야마 전류 증폭형 트랜지스터 소자 및 전류 증폭형 발광 트랜지스터 소자
TWI415318B (zh) * 2010-09-14 2013-11-11 E Ink Holdings Inc 電晶體結構
DE102010041331A1 (de) * 2010-09-24 2012-03-29 Siemens Aktiengesellschaft Ladungsträgermodulation zur Farb- und Helligkeitsabstimmung in organischen Leuchtdioden
CN102339955A (zh) * 2011-10-09 2012-02-01 北京理工大学 一种共振隧穿有机发光二极管及其制备方法
DE102012102910B4 (de) * 2012-04-03 2016-09-22 Novaled Ag Vertikaler organischer Transistor und Verfahren zum Herstellen
US9608217B2 (en) 2012-04-27 2017-03-28 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Transistor element
JP6092679B2 (ja) * 2013-03-26 2017-03-08 中山　健一 トランジスタ素子
US9929365B2 (en) * 2014-05-28 2018-03-27 The Regents Of The University Of Michigan Excited state management
US10290816B2 (en) 2015-11-16 2019-05-14 The Regents Of The University Of Michigan Organic electroluminescent materials and devices
KR20170129983A (ko) 2016-05-17 2017-11-28 삼성전자주식회사 발광소자 패키지, 이를 이용한 디스플레이 장치 및 그 제조방법
US11741894B2 (en) * 2020-03-25 2023-08-29 Sharp Kabushiki Kaisha Light-emitting device and method for controlling light-emitting device
US12342429B2 (en) * 2020-07-29 2025-06-24 Sharp Kabushiki Kaisha Light-emitting device and driving method for light-emitting device
KR102569796B1 (ko) * 2022-12-29 2023-08-25 한국표준과학연구원 역 구조의 수직형 발광 트랜지스터 및 그 제조방법
KR102571946B1 (ko) * 2022-12-29 2023-08-30 한국표준과학연구원 수직형 유기 박막 트랜지스터 및 제조방법

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Also Published As

Publication number Publication date
US8120242B2 (en) 2012-02-21
JP5182775B2 (ja) 2013-04-17
JP2007258308A (ja) 2007-10-04
KR101255407B1 (ko) 2013-04-17
EP2009700A4 (en) 2011-09-07
US20090108749A1 (en) 2009-04-30
US20120112318A1 (en) 2012-05-10
EP2009700A1 (en) 2008-12-31
CN102130299A (zh) 2011-07-20
CN101432883A (zh) 2009-05-13
KR20090009818A (ko) 2009-01-23
WO2007119490A1 (ja) 2007-10-25
TW200810111A (en) 2008-02-16

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