JPS6425563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6425563A
JPS6425563A JP62181118A JP18111887A JPS6425563A JP S6425563 A JPS6425563 A JP S6425563A JP 62181118 A JP62181118 A JP 62181118A JP 18111887 A JP18111887 A JP 18111887A JP S6425563 A JPS6425563 A JP S6425563A
Authority
JP
Japan
Prior art keywords
emitter
collector
macromolecules
transistor
organic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62181118A
Other languages
Japanese (ja)
Inventor
Hiroshi Jinriki
Mitsuo Nanba
Takeo Shiba
Eiji Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62181118A priority Critical patent/JPS6425563A/en
Publication of JPS6425563A publication Critical patent/JPS6425563A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To make it possible to form a transistor at low temperature and to form an optimum semiconductor device for general-purpose equipment at a low cost, by using semiconductors comprising an organic material for the emitter and the collector of the three-terminal transistor. CONSTITUTION:Semiconductors comprising an organic material are used for an emitter 7 and a collector 6 of a three-terminal transistor. The organic material comprises pi conjugate macromolecules. A compound has a band structure comprising a valence band, a conduction band and a band width, which is the separating interval between said bands, by the overlap of pi bonding orbits when the macromolecules are formed. This band width is in the range of about 1.0-3.5eV. Carriers for conveying charge can be formed by so-called doping. Conductivity can be changed from an insulator to a semiconductor and to a metal. The transistor can be formed by laminating such pi conjugate macromolecules or by laminating inorganic semiconductors and metals. Since the pi conjugate macromolecules can form Schottky junctions with specified metals, the junction between the emitter 7 and a base 5 and the junction between the collector 6 and the base 5 can be made to be the Schottky junctions when the emitter 7 and the collector 6 are made of the pi conjugate macromolecules.
JP62181118A 1987-07-22 1987-07-22 Semiconductor device Pending JPS6425563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62181118A JPS6425563A (en) 1987-07-22 1987-07-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181118A JPS6425563A (en) 1987-07-22 1987-07-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6425563A true JPS6425563A (en) 1989-01-27

Family

ID=16095165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62181118A Pending JPS6425563A (en) 1987-07-22 1987-07-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6425563A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991010264A1 (en) * 1989-12-27 1991-07-11 Nippon Petrochemicals Co., Ltd. Electric element and method of controlling conductivity
JPH10214044A (en) * 1997-01-31 1998-08-11 Sanyo Electric Co Ltd Display device
WO2003092085A1 (en) * 2002-04-26 2003-11-06 Canon Kabushiki Kaisha Organic semiconductor device, rf modulation circuit, and ic card
JP2004006806A (en) * 2002-04-26 2004-01-08 Canon Inc Organic semiconductor element, rf modulation circuit and ic card
JP2007258308A (en) * 2006-03-22 2007-10-04 Osaka Univ Transistor element and its fabrication process, light emitting element, and display
JP2010135809A (en) * 2010-01-05 2010-06-17 Osaka Univ Transistor element and method of manufacturing the same, light-emitting element, and display
JP2011023399A (en) * 2009-07-13 2011-02-03 Tottori Univ Organic-inorganic hybrid junction type photoelectric transducer
JP2014042077A (en) * 2013-11-26 2014-03-06 Tottori Univ Organic-inorganic hybrid junction type photoelectric transducer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991010264A1 (en) * 1989-12-27 1991-07-11 Nippon Petrochemicals Co., Ltd. Electric element and method of controlling conductivity
JPH10214044A (en) * 1997-01-31 1998-08-11 Sanyo Electric Co Ltd Display device
WO2003092085A1 (en) * 2002-04-26 2003-11-06 Canon Kabushiki Kaisha Organic semiconductor device, rf modulation circuit, and ic card
JP2004006806A (en) * 2002-04-26 2004-01-08 Canon Inc Organic semiconductor element, rf modulation circuit and ic card
US7115898B2 (en) 2002-04-26 2006-10-03 Canon Kabushiki Kaisha Organic semiconductor device, RF modulation circuit, and IC card
JP2007258308A (en) * 2006-03-22 2007-10-04 Osaka Univ Transistor element and its fabrication process, light emitting element, and display
JP2011023399A (en) * 2009-07-13 2011-02-03 Tottori Univ Organic-inorganic hybrid junction type photoelectric transducer
JP2010135809A (en) * 2010-01-05 2010-06-17 Osaka Univ Transistor element and method of manufacturing the same, light-emitting element, and display
JP2014042077A (en) * 2013-11-26 2014-03-06 Tottori Univ Organic-inorganic hybrid junction type photoelectric transducer

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