CN101431118B - 雪崩光电二极管 - Google Patents

雪崩光电二极管 Download PDF

Info

Publication number
CN101431118B
CN101431118B CN2008101885986A CN200810188598A CN101431118B CN 101431118 B CN101431118 B CN 101431118B CN 2008101885986 A CN2008101885986 A CN 2008101885986A CN 200810188598 A CN200810188598 A CN 200810188598A CN 101431118 B CN101431118 B CN 101431118B
Authority
CN
China
Prior art keywords
type
layer
mentioned
window layer
conductive region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008101885986A
Other languages
English (en)
Chinese (zh)
Other versions
CN101431118A (zh
Inventor
柳生荣治
石村荣太郎
中路雅晴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101431118A publication Critical patent/CN101431118A/zh
Application granted granted Critical
Publication of CN101431118B publication Critical patent/CN101431118B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)
CN2008101885986A 2005-09-12 2006-09-12 雪崩光电二极管 Active CN101431118B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005-263470 2005-09-12
JP2005263470A JP4956944B2 (ja) 2005-09-12 2005-09-12 アバランシェフォトダイオード
JP2005263470 2005-09-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101539306A Division CN100521255C (zh) 2005-09-12 2006-09-12 雪崩光电二极管

Publications (2)

Publication Number Publication Date
CN101431118A CN101431118A (zh) 2009-05-13
CN101431118B true CN101431118B (zh) 2011-04-20

Family

ID=37878900

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2008101885986A Active CN101431118B (zh) 2005-09-12 2006-09-12 雪崩光电二极管
CNB2006101539306A Active CN100521255C (zh) 2005-09-12 2006-09-12 雪崩光电二极管

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2006101539306A Active CN100521255C (zh) 2005-09-12 2006-09-12 雪崩光电二极管

Country Status (4)

Country Link
US (1) US7538367B2 (https=)
JP (1) JP4956944B2 (https=)
CN (2) CN101431118B (https=)
TW (1) TWI311817B (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008011617A2 (en) * 2006-07-21 2008-01-24 The Regents Of The University Of California Shallow-trench-isolation (sti)-bounded single-photon avalanche photodetectors
CN100483650C (zh) * 2007-06-14 2009-04-29 中山大学 一种抑止雪崩光电二极管边缘击穿的方法
US7834379B2 (en) * 2007-07-18 2010-11-16 Jds Uniphase Corporation Avalanche photodiode with edge breakdown suppression
US7795064B2 (en) * 2007-11-14 2010-09-14 Jds Uniphase Corporation Front-illuminated avalanche photodiode
JP4662188B2 (ja) 2008-02-01 2011-03-30 住友電気工業株式会社 受光素子、受光素子アレイおよびそれらの製造方法
JP5195172B2 (ja) 2008-08-29 2013-05-08 住友電気工業株式会社 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
JP5233535B2 (ja) 2008-09-11 2013-07-10 住友電気工業株式会社 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
JP5233549B2 (ja) * 2008-09-22 2013-07-10 住友電気工業株式会社 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置
JP2010135360A (ja) * 2008-12-02 2010-06-17 Mitsubishi Electric Corp アバランシェフォトダイオード
JP4728386B2 (ja) * 2008-12-17 2011-07-20 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
JP5422990B2 (ja) * 2008-12-22 2014-02-19 住友電気工業株式会社 生体成分検出装置
JP4743453B2 (ja) * 2008-12-25 2011-08-10 住友電気工業株式会社 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置
CN102265411B (zh) * 2008-12-26 2014-06-11 住友电气工业株式会社 受光元件、受光元件阵列、制造受光元件的方法以及制造受光元件阵列的方法
JP5091886B2 (ja) 2009-02-13 2012-12-05 浜松ホトニクス株式会社 イメージセンサ
JP5271104B2 (ja) * 2009-02-13 2013-08-21 浜松ホトニクス株式会社 リニアイメージセンサ
JP5391945B2 (ja) * 2009-09-07 2014-01-15 住友電気工業株式会社 受光素子及びエピタキシャルウェハ
WO2011027624A1 (ja) * 2009-09-07 2011-03-10 住友電気工業株式会社 Ｉｉｉ－ｖ族化合物半導体受光素子、ｉｉｉ－ｖ族化合物半導体受光素子を作製する方法、受光素子、及び、エピタキシャルウェハ
JP4706805B2 (ja) * 2011-01-21 2011-06-22 住友電気工業株式会社 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
JP4721147B1 (ja) * 2011-02-21 2011-07-13 住友電気工業株式会社 生体成分検出装置
JP4737478B2 (ja) * 2011-02-21 2011-08-03 住友電気工業株式会社 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置
JP4743458B2 (ja) * 2011-03-17 2011-08-10 住友電気工業株式会社 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
CN103107231A (zh) * 2013-02-05 2013-05-15 武汉电信器件有限公司 一种基于非N型InP衬底的雪崩光电二极管及其制备方法
JP5776745B2 (ja) * 2013-10-15 2015-09-09 住友電気工業株式会社 受光素子及びエピタキシャルウェハ
JP6332096B2 (ja) * 2015-03-23 2018-05-30 三菱電機株式会社 半導体受光素子
US20190157479A1 (en) * 2017-09-15 2019-05-23 Kabushiki Kaisha Toshiba Photodetection element, photodetector, photodetection system and laser imaging detection and ranging apparatus
US11329179B2 (en) * 2017-09-15 2022-05-10 Mitsubishi Electric Corporation Semiconductor light-receiving device and method for manufacturing the same
CN109216495B (zh) * 2018-10-24 2023-12-29 芯思杰技术(深圳)股份有限公司 雪崩光电探测器、制作方法以及激光雷达系统
JP7524160B2 (ja) * 2019-03-20 2024-07-29 ソニーセミコンダクタソリューションズ株式会社 受光素子の製造方法
CN111755555B (zh) * 2020-07-06 2022-01-07 武汉光谷量子技术有限公司 台面型二极管及其制作方法、阵列芯片的制作方法
KR102314915B1 (ko) * 2020-11-16 2021-10-20 주식회사 우리로 암전류의 발생을 최소화한 단일광자 검출장치 및 시스템
WO2022157888A1 (ja) 2021-01-21 2022-07-28 三菱電機株式会社 アバランシェフォトダイオード
TWI886929B (zh) * 2024-04-29 2025-06-11 聯亞光電工業股份有限公司 光檢測元件
WO2026079603A1 (ko) * 2024-10-10 2026-04-16 엘지이노텍 주식회사 광 검출 소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272364A (en) * 1991-07-01 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor photodetector device with short lifetime region
US6015721A (en) * 1996-12-30 2000-01-18 Hyundai Electronics Industries Co., Ltd. Method of manufacturing an avalanche photodiode
US6294414B1 (en) * 2000-05-04 2001-09-25 Agere Systems Guardian Corp. Method of fabricating heterointerface devices having diffused junctions

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
US4442444A (en) 1980-07-08 1984-04-10 Fujitsu Limited Avalanche photodiodes
JPS5742176A (en) 1980-08-28 1982-03-09 Fujitsu Ltd Optical semiconductor element
JPS5793585A (en) 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS5848478A (ja) 1981-09-17 1983-03-22 Fujitsu Ltd ＩｎΡ系Ｂｅ注入ダイオ−ドの形成方法
US4894703A (en) * 1982-03-19 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Restricted contact, planar photodiode
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
JPS616820A (ja) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd 化合物半導体装置の製造方法
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
JPS6243185A (ja) 1985-08-21 1987-02-25 Fujitsu Ltd 半導体受光素子
JPS62259481A (ja) * 1986-04-15 1987-11-11 Fujitsu Ltd 半導体受光装置
JP2708409B2 (ja) * 1986-06-20 1998-02-04 株式会社日立製作所 半導体受光素子およびその製造方法
JPS63285977A (ja) 1987-05-19 1988-11-22 Fujitsu Ltd 半導体受光装置
US4857982A (en) 1988-01-06 1989-08-15 University Of Southern California Avalanche photodiode with floating guard ring
US4876209A (en) 1988-01-06 1989-10-24 U.S.C. Method of making avalanche photodiode
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
JPH04263474A (ja) * 1991-02-19 1992-09-18 Nec Corp 半導体受光素子の製造方法
JPH05234927A (ja) * 1992-02-20 1993-09-10 Mitsubishi Electric Corp 半導体デバイスの固相拡散による拡散領域の形成方法
JP3218582B2 (ja) * 1992-12-17 2001-10-15 横河電機株式会社 ＧａＩｎＡｓフォトダイオード
JPH11121785A (ja) * 1997-10-16 1999-04-30 Toshiba Electronic Engineering Corp 化合物半導体素子およびその製造方法
CA2307745A1 (en) * 1999-07-15 2001-01-15 Sumitomo Electric Industries, Ltd. Photodiode
US6844607B2 (en) * 2000-10-06 2005-01-18 The Furukawa Electric Co., Ltd. Photodiode array device, a photodiode module, and a structure for connecting the photodiode module and an optical connector
JP2002151727A (ja) * 2000-11-08 2002-05-24 Yokogawa Electric Corp フォトダイオード
JP2002289904A (ja) * 2001-03-23 2002-10-04 Sumitomo Electric Ind Ltd 半導体受光素子とその製造方法
JP4166560B2 (ja) * 2002-12-17 2008-10-15 三菱電機株式会社 アバランシェフォトダイオード及びその製造方法
JP2004319765A (ja) * 2003-04-16 2004-11-11 Sumitomo Electric Ind Ltd 化合物半導体ウエハおよびその製造方法
JP4611066B2 (ja) * 2004-04-13 2011-01-12 三菱電機株式会社 アバランシェフォトダイオード
US9640703B2 (en) 2004-10-25 2017-05-02 Mitsubishi Electric Corporation Avalanche photodiode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272364A (en) * 1991-07-01 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor photodetector device with short lifetime region
US6015721A (en) * 1996-12-30 2000-01-18 Hyundai Electronics Industries Co., Ltd. Method of manufacturing an avalanche photodiode
US6294414B1 (en) * 2000-05-04 2001-09-25 Agere Systems Guardian Corp. Method of fabricating heterointerface devices having diffused junctions

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
JP特开2002-16281A 2002.01.18
JP特开2004-200302A 2004.07.15
JP特开平10-209486A 1998.08.07
JP特开平11-121785A 1999.04.30
JP特开昭62-43185A 1987.02.25
JP特开昭63-285977A 1988.11.22

Also Published As

Publication number Publication date
TW200715595A (en) 2007-04-16
TWI311817B (en) 2009-07-01
US7538367B2 (en) 2009-05-26
JP4956944B2 (ja) 2012-06-20
US20070096236A1 (en) 2007-05-03
CN1933187A (zh) 2007-03-21
JP2007080920A (ja) 2007-03-29
CN100521255C (zh) 2009-07-29
CN101431118A (zh) 2009-05-13

Similar Documents

Publication Publication Date Title
CN101431118B (zh) 雪崩光电二极管
JP2014099467A (ja) アバランシェフォトダイオードおよびその製造方法
US6664573B2 (en) Avalanche photodiode
JP2006040919A (ja) アバランシェフォトダイオード
JP2005032843A (ja) アバランシェホトダイオード
JPS63116474A (ja) アバランシエ光検知器
CN103094398B (zh) 一种免扩散的雪崩光电二极管及其制备方法
CN106887469A (zh) 一种雪崩二极管的外延结构及雪崩二极管的制造方法
KR101016183B1 (ko) Ｔｖｓ급 제너 다이오드 및 그 제조 방법
DE102005025937B4 (de) Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren
JPS60178673A (ja) アバランシフオトダイオ−ド
DE2734726A1 (de) Verfahren zum herstellen von siliciumphotodioden
KR102531037B1 (ko) 태양 전지의 표면 처리
KR20230124289A (ko) 광대역 포토다이오드 및 그 제조방법
Law et al. State‐of‐the‐art performance of GaAlAs/GaAs avalanche photodiodes
KR102712619B1 (ko) 고농도 도핑된 에피층을 이용한 광대역 포토다이오드 및 그 제조방법
JPS63100782A (ja) 半導体受光素子
KR102078316B1 (ko) 2차원 도핑 기술을 이용한 수광소자 및 그 제조방법
CN111755553B (zh) 铅掺杂型锗红外光电探测器及其形成方法
JP2637953B2 (ja) 半導体受光素子
EP2812921B1 (de) Halbleiterbauelemente mit steilem phosphor-profil in einer germaniumschicht
CN120129319A (zh) 一种电荷耦合型单像素探测器光谱芯片及其驱动方法
JPH0382085A (ja) 半導体受光素子及びその製造方法
JPS63120479A (ja) フオトダイオ−ド
KR940007450B1 (ko) 이온주입에 의한 수평전계 반도체 광스위칭 소자의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant