CN101414608A - 互补金属氧化物半导体装置及其制造方法 - Google Patents

互补金属氧化物半导体装置及其制造方法 Download PDF

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Publication number
CN101414608A
CN101414608A CNA2008101297787A CN200810129778A CN101414608A CN 101414608 A CN101414608 A CN 101414608A CN A2008101297787 A CNA2008101297787 A CN A2008101297787A CN 200810129778 A CN200810129778 A CN 200810129778A CN 101414608 A CN101414608 A CN 101414608A
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CN
China
Prior art keywords
layer
semiconductor layer
cmos device
lower floor
semiconductor
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Pending
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CNA2008101297787A
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English (en)
Chinese (zh)
Inventor
姜东勋
李商文
田重锡
白光铉
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101414608A publication Critical patent/CN101414608A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CNA2008101297787A 2007-10-16 2008-08-18 互补金属氧化物半导体装置及其制造方法 Pending CN101414608A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070104062 2007-10-16
KR1020070104062A KR20090038653A (ko) 2007-10-16 2007-10-16 Ｃｍｏｓ 소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
CN101414608A true CN101414608A (zh) 2009-04-22

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CNA2008101297787A Pending CN101414608A (zh) 2007-10-16 2008-08-18 互补金属氧化物半导体装置及其制造方法

Country Status (4)

Country Link
US (1) US20090095981A1 (enExample)
JP (1) JP2009099956A (enExample)
KR (1) KR20090038653A (enExample)
CN (1) CN101414608A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104600070A (zh) * 2013-10-31 2015-05-06 三星电子株式会社 衬底结构、cmos器件和制造cmos器件的方法
CN105244320A (zh) * 2015-08-28 2016-01-13 西安电子科技大学 基于SOI的应变Ge沟道倒梯形栅CMOS集成器件及制备方法
CN108257916A (zh) * 2016-12-28 2018-07-06 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

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US7790542B2 (en) * 2008-06-18 2010-09-07 International Business Machines Corporation CMOS devices having reduced threshold voltage variations and methods of manufacture thereof
US8395216B2 (en) * 2009-10-16 2013-03-12 Texas Instruments Incorporated Method for using hybrid orientation technology (HOT) in conjunction with selective epitaxy to form semiconductor devices with regions of different electron and hole mobilities and related apparatus
JP2011114160A (ja) * 2009-11-26 2011-06-09 Sumitomo Chemical Co Ltd 半導体基板、電子デバイスおよび半導体基板の製造方法
JP2011146691A (ja) * 2009-12-15 2011-07-28 Sumitomo Chemical Co Ltd 半導体基板、半導体デバイスおよび半導体基板の製造方法
KR101576203B1 (ko) 2010-01-18 2015-12-11 삼성전자주식회사 최적화된 채널 영역을 갖는 모스 트랜지스터들을 구비하는 반도체 소자들 및 그 제조방법들
CN102664166B (zh) * 2012-05-31 2013-11-27 中国科学院上海微系统与信息技术研究所 一种cmos器件及其制作方法
KR102083495B1 (ko) * 2013-01-07 2020-03-02 삼성전자 주식회사 Ｃｍｏｓ 소자와 이를 포함하는 광학장치와 그 제조방법
KR102069275B1 (ko) * 2013-06-07 2020-01-22 삼성전자주식회사 변형된 채널층을 갖는 반도체 소자 및 그 제조 방법
KR102210325B1 (ko) * 2013-09-06 2021-02-01 삼성전자주식회사 Ｃｍｏｓ 소자 및 그 제조 방법
US9418841B2 (en) * 2014-12-30 2016-08-16 International Business Machines Corporation Type III-V and type IV semiconductor device formation
CN104992930A (zh) * 2015-07-07 2015-10-21 西安电子科技大学 应变Ge CMOS集成器件的制备方法及其CMOS集成器件
US9613871B2 (en) 2015-07-16 2017-04-04 Samsung Electronics Co., Ltd. Semiconductor device and fabricating method thereof
CN105118809A (zh) * 2015-08-28 2015-12-02 西安电子科技大学 应变Ge槽型栅CMOS集成器件制备方法及其CMOS集成器件
US10593600B2 (en) 2016-02-24 2020-03-17 International Business Machines Corporation Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap
US10062693B2 (en) * 2016-02-24 2018-08-28 International Business Machines Corporation Patterned gate dielectrics for III-V-based CMOS circuits

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JPS6254459A (ja) * 1985-09-02 1987-03-10 Seiko Epson Corp 相補型電界効果トランジスタ
JP2000216347A (ja) * 1999-01-20 2000-08-04 Toshiba Corp Ｃｍｏｓ半導体装置
JP4521542B2 (ja) * 1999-03-30 2010-08-11 ルネサスエレクトロニクス株式会社 半導体装置および半導体基板
US7662689B2 (en) * 2003-12-23 2010-02-16 Intel Corporation Strained transistor integration for CMOS
US7244958B2 (en) * 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
JP4604637B2 (ja) * 2004-10-07 2011-01-05 ソニー株式会社 半導体装置および半導体装置の製造方法
US7282402B2 (en) * 2005-03-30 2007-10-16 Freescale Semiconductor, Inc. Method of making a dual strained channel semiconductor device
TWI258172B (en) * 2005-08-24 2006-07-11 Ind Tech Res Inst Transistor device with strained Ge layer by selectively grown and fabricating method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104600070A (zh) * 2013-10-31 2015-05-06 三星电子株式会社 衬底结构、cmos器件和制造cmos器件的方法
CN104600070B (zh) * 2013-10-31 2019-06-07 三星电子株式会社 衬底结构、cmos器件和制造cmos器件的方法
CN105244320A (zh) * 2015-08-28 2016-01-13 西安电子科技大学 基于SOI的应变Ge沟道倒梯形栅CMOS集成器件及制备方法
CN108257916A (zh) * 2016-12-28 2018-07-06 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN108257916B (zh) * 2016-12-28 2020-07-10 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

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US20090095981A1 (en) 2009-04-16
JP2009099956A (ja) 2009-05-07
KR20090038653A (ko) 2009-04-21

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Application publication date: 20090422