CN101409222B - Soi衬底的制造方法 - Google Patents

Soi衬底的制造方法 Download PDF

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Publication number
CN101409222B
CN101409222B CN2008101698890A CN200810169889A CN101409222B CN 101409222 B CN101409222 B CN 101409222B CN 2008101698890 A CN2008101698890 A CN 2008101698890A CN 200810169889 A CN200810169889 A CN 200810169889A CN 101409222 B CN101409222 B CN 101409222B
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layer
semiconductor
ions
substrate
manufacturing
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CN101409222A (zh
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大沼英人
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Recrystallisation Techniques (AREA)
CN2008101698890A 2007-10-10 2008-10-10 Soi衬底的制造方法 Expired - Fee Related CN101409222B (zh)

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JP2007264998 2007-10-10
JP2007-264998 2007-10-10
JP2007264998 2007-10-10

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CN101409222A CN101409222A (zh) 2009-04-15
CN101409222B true CN101409222B (zh) 2013-01-02

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JP (1) JP5522917B2 (https=)
CN (1) CN101409222B (https=)

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US8278187B2 (en) * 2009-06-24 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate by stepwise etching with at least two etching treatments
US8318588B2 (en) * 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
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US9123529B2 (en) 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
US8513787B2 (en) 2011-08-16 2013-08-20 Advanced Analogic Technologies, Incorporated Multi-die semiconductor package with one or more embedded die pads
CN106601663B (zh) * 2015-10-20 2019-05-31 上海新昇半导体科技有限公司 Soi衬底及其制备方法
JP6463664B2 (ja) * 2015-11-27 2019-02-06 信越化学工業株式会社 ウエハ加工体及びウエハ加工方法
JP6759626B2 (ja) * 2016-02-25 2020-09-23 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
CN107154379B (zh) * 2016-03-03 2020-01-24 上海新昇半导体科技有限公司 绝缘层上顶层硅衬底及其制造方法
CN106783725B (zh) 2016-12-27 2019-09-17 上海新傲科技股份有限公司 带有绝缘埋层的衬底的制备方法
CN107146758B (zh) 2016-12-27 2019-12-13 上海新傲科技股份有限公司 带有载流子俘获中心的衬底的制备方法
CN106683980B (zh) * 2016-12-27 2019-12-13 上海新傲科技股份有限公司 带有载流子俘获中心的衬底的制备方法
WO2019236320A1 (en) * 2018-06-08 2019-12-12 Globalwafers Co., Ltd. Method for transfer of a thin layer of silicon
FR3091010B1 (fr) * 2018-12-24 2020-12-04 Soitec Silicon On Insulator Structure de type semi-conducteur pour applications digitales et radiofréquences, et procédé de fabrication d’une telle structure
CN110767773A (zh) * 2019-09-29 2020-02-07 南通苏民新能源科技有限公司 一种提高半片太阳能电池组件光电转换效率的方法
US12506112B2 (en) 2021-10-06 2025-12-23 Tokyo Electron Limited Method for etching of metal
US12546670B1 (en) * 2022-04-05 2026-02-10 Corporation For National Research Initiatives Low-cost, high-performance and highly customizable micro-scale pressure and force sensor
TW202410174A (zh) * 2022-08-25 2024-03-01 聯華電子股份有限公司 半導體元件及其製作方法
CN116390324B (zh) * 2023-05-25 2023-08-29 之江实验室 狭缝波导加速结构和基于狭缝波导加速结构的加速器

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US20090098704A1 (en) 2009-04-16
US8409966B2 (en) 2013-04-02
US20110263096A1 (en) 2011-10-27
JP5522917B2 (ja) 2014-06-18
CN101409222A (zh) 2009-04-15
US7989305B2 (en) 2011-08-02
JP2009111362A (ja) 2009-05-21

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