CN101389788A - 从基片边缘注入处理调谐气体 - Google Patents

从基片边缘注入处理调谐气体 Download PDF

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Publication number
CN101389788A
CN101389788A CNA2007800062311A CN200780006231A CN101389788A CN 101389788 A CN101389788 A CN 101389788A CN A2007800062311 A CNA2007800062311 A CN A2007800062311A CN 200780006231 A CN200780006231 A CN 200780006231A CN 101389788 A CN101389788 A CN 101389788A
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CN
China
Prior art keywords
gas
substrate
tuning
edge
tuning gas
Prior art date
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Pending
Application number
CNA2007800062311A
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English (en)
Chinese (zh)
Inventor
拉金德尔·德辛德萨
穆昆德·斯里尼瓦桑
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Lam Research Corp
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Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN101389788A publication Critical patent/CN101389788A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
CNA2007800062311A 2006-02-21 2007-02-16 从基片边缘注入处理调谐气体 Pending CN101389788A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/359,300 US8097120B2 (en) 2006-02-21 2006-02-21 Process tuning gas injection from the substrate edge
US11/359,300 2006-02-21

Publications (1)

Publication Number Publication Date
CN101389788A true CN101389788A (zh) 2009-03-18

Family

ID=38426959

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800062311A Pending CN101389788A (zh) 2006-02-21 2007-02-16 从基片边缘注入处理调谐气体

Country Status (7)

Country Link
US (1) US8097120B2 (https=)
JP (2) JP5457037B2 (https=)
KR (1) KR101336446B1 (https=)
CN (1) CN101389788A (https=)
SG (1) SG170007A1 (https=)
TW (1) TWI364791B (https=)
WO (1) WO2007098071A2 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112275A (zh) * 2014-12-19 2017-08-29 应用材料公司 用于基板处理腔室的边缘环
CN109600898A (zh) * 2018-12-13 2019-04-09 大连理工大学 一种喷淋式电极及放电系统
CN109750279A (zh) * 2017-11-07 2019-05-14 中微半导体设备(上海)股份有限公司 一种用于热化学气相沉积的基片托盘和反应器
CN112447485A (zh) * 2019-09-04 2021-03-05 细美事有限公司 用于处理基板的装置和方法
CN112992743A (zh) * 2021-05-17 2021-06-18 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备
CN115763300A (zh) * 2021-09-02 2023-03-07 圆益Ips股份有限公司 基板处理装置

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CN112992637B (zh) * 2019-12-02 2025-06-10 Asmip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
CN112981372B (zh) * 2019-12-12 2024-02-13 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
KR102791334B1 (ko) * 2019-12-31 2025-04-08 삼성전자주식회사 에지 링 및 이를 갖는 기판 처리 장치
CN115362544A (zh) * 2020-04-02 2022-11-18 朗姆研究公司 用于调节气体的局部输送的边缘环
KR102751528B1 (ko) * 2020-09-01 2025-01-07 삼성전자주식회사 플라즈마 공정 장비
CN115702486A (zh) * 2020-11-23 2023-02-14 朗姆研究公司 经由吹扫环防止局部化的等离子电弧
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Cited By (10)

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Publication number Priority date Publication date Assignee Title
CN107112275A (zh) * 2014-12-19 2017-08-29 应用材料公司 用于基板处理腔室的边缘环
CN107112275B (zh) * 2014-12-19 2020-10-30 应用材料公司 用于基板处理腔室的边缘环
US11417561B2 (en) 2014-12-19 2022-08-16 Applied Materials, Inc. Edge ring for a substrate processing chamber
CN109750279A (zh) * 2017-11-07 2019-05-14 中微半导体设备(上海)股份有限公司 一种用于热化学气相沉积的基片托盘和反应器
CN109600898A (zh) * 2018-12-13 2019-04-09 大连理工大学 一种喷淋式电极及放电系统
CN109600898B (zh) * 2018-12-13 2020-04-17 大连理工大学 一种喷淋式电极及放电系统
CN112447485A (zh) * 2019-09-04 2021-03-05 细美事有限公司 用于处理基板的装置和方法
CN112992743A (zh) * 2021-05-17 2021-06-18 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备
CN112992743B (zh) * 2021-05-17 2021-09-17 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备
CN115763300A (zh) * 2021-09-02 2023-03-07 圆益Ips股份有限公司 基板处理装置

Also Published As

Publication number Publication date
JP2009527921A (ja) 2009-07-30
JP5457037B2 (ja) 2014-04-02
WO2007098071A3 (en) 2008-04-24
KR101336446B1 (ko) 2013-12-04
TWI364791B (en) 2012-05-21
TW200805481A (en) 2008-01-16
KR20080106413A (ko) 2008-12-05
US20070193688A1 (en) 2007-08-23
WO2007098071A2 (en) 2007-08-30
US8097120B2 (en) 2012-01-17
SG170007A1 (en) 2011-04-29
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