KR101336446B1 - 기판 에지로부터의 가스 주입을 튜닝하는 프로세스 - Google Patents

기판 에지로부터의 가스 주입을 튜닝하는 프로세스 Download PDF

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Publication number
KR101336446B1
KR101336446B1 KR1020087020510A KR20087020510A KR101336446B1 KR 101336446 B1 KR101336446 B1 KR 101336446B1 KR 1020087020510 A KR1020087020510 A KR 1020087020510A KR 20087020510 A KR20087020510 A KR 20087020510A KR 101336446 B1 KR101336446 B1 KR 101336446B1
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South Korea
Prior art keywords
gas
tuning
substrate
tuning gas
substrate support
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Korean (ko)
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KR20080106413A (ko
Inventor
라진더 딘드사
무쿤드 스리니바산
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020087020510A 2006-02-21 2007-02-16 기판 에지로부터의 가스 주입을 튜닝하는 프로세스 Active KR101336446B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/359,300 US8097120B2 (en) 2006-02-21 2006-02-21 Process tuning gas injection from the substrate edge
US11/359,300 2006-02-21
PCT/US2007/004225 WO2007098071A2 (en) 2006-02-21 2007-02-16 Process tuning gas injection from the substrate edge

Publications (2)

Publication Number Publication Date
KR20080106413A KR20080106413A (ko) 2008-12-05
KR101336446B1 true KR101336446B1 (ko) 2013-12-04

Family

ID=38426959

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Application Number Title Priority Date Filing Date
KR1020087020510A Active KR101336446B1 (ko) 2006-02-21 2007-02-16 기판 에지로부터의 가스 주입을 튜닝하는 프로세스

Country Status (7)

Country Link
US (1) US8097120B2 (https=)
JP (2) JP5457037B2 (https=)
KR (1) KR101336446B1 (https=)
CN (1) CN101389788A (https=)
SG (1) SG170007A1 (https=)
TW (1) TWI364791B (https=)
WO (1) WO2007098071A2 (https=)

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JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
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KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
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CN107112275B (zh) * 2014-12-19 2020-10-30 应用材料公司 用于基板处理腔室的边缘环
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102641441B1 (ko) * 2016-09-28 2024-02-29 삼성전자주식회사 링 어셈블리 및 이를 포함하는 척 어셈블리
JP6837911B2 (ja) * 2017-05-17 2021-03-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
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CN109750279B (zh) * 2017-11-07 2024-11-08 中微半导体设备(上海)股份有限公司 一种用于热化学气相沉积的基片托盘和反应器
CN109600898B (zh) * 2018-12-13 2020-04-17 大连理工大学 一种喷淋式电极及放电系统
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CN112992637B (zh) * 2019-12-02 2025-06-10 Asmip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
CN112981372B (zh) * 2019-12-12 2024-02-13 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
KR102791334B1 (ko) * 2019-12-31 2025-04-08 삼성전자주식회사 에지 링 및 이를 갖는 기판 처리 장치
CN115362544A (zh) * 2020-04-02 2022-11-18 朗姆研究公司 用于调节气体的局部输送的边缘环
KR102751528B1 (ko) * 2020-09-01 2025-01-07 삼성전자주식회사 플라즈마 공정 장비
CN115702486A (zh) * 2020-11-23 2023-02-14 朗姆研究公司 经由吹扫环防止局部化的等离子电弧
JP2022152246A (ja) * 2021-03-29 2022-10-12 株式会社日立ハイテク ウエハ処理装置
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Also Published As

Publication number Publication date
CN101389788A (zh) 2009-03-18
JP2009527921A (ja) 2009-07-30
JP5457037B2 (ja) 2014-04-02
WO2007098071A3 (en) 2008-04-24
TWI364791B (en) 2012-05-21
TW200805481A (en) 2008-01-16
KR20080106413A (ko) 2008-12-05
US20070193688A1 (en) 2007-08-23
WO2007098071A2 (en) 2007-08-30
US8097120B2 (en) 2012-01-17
SG170007A1 (en) 2011-04-29
JP2013211586A (ja) 2013-10-10

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