CN101305646A - 热传递涂层 - Google Patents
热传递涂层 Download PDFInfo
- Publication number
- CN101305646A CN101305646A CNA2006800416006A CN200680041600A CN101305646A CN 101305646 A CN101305646 A CN 101305646A CN A2006800416006 A CNA2006800416006 A CN A2006800416006A CN 200680041600 A CN200680041600 A CN 200680041600A CN 101305646 A CN101305646 A CN 101305646A
- Authority
- CN
- China
- Prior art keywords
- metal
- thermal transfer
- transfer coating
- coating according
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/341—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one carbide layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
- F28F13/185—Heat-exchange surfaces provided with microstructures or with porous coatings
- F28F13/187—Heat-exchange surfaces provided with microstructures or with porous coatings especially adapted for evaporator surfaces or condenser surfaces, e.g. with nucleation sites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/256—Heavy metal or aluminum or compound thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Turbine Rotor Nozzle Sealing (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明公开一种热传递涂层,该涂层包括多个金属体和多个间隙元件,所述多个间隙元件设置在所述多个金属体之间并且将它们相互连接。所述金属体包括包含第一金属的内部部分和包含合金的外部部分,所述合金包含所述第一金属和第二金属。所述间隙元件包括所述外部部分的所述合金。
Description
技术领域
本发明整体涉及热传递涂层。更具体地讲,本发明涉及多孔金属涂层以及制造和使用所述涂层的方法。
背景技术
一种用于散热元件的冷却系统,其包括可蒸发或可沸腾的流体。然后使用外部装置把所产生的蒸汽冷凝并且被返回锅炉。为了改善锅炉处的流体的热传递性能,可使用多孔沸腾表面。
可用的多孔沸腾表面有多种,包括,例如,通过火焰或等离子喷涂而制成的涂层。但使用这些工艺可能难于控制孔隙度和均匀地涂布三维基底。其它已知的涂层包括与有机粘结剂结合的传导颗粒。这些涂层通常具有较差的整体热导率,因此需要精确的厚度控制,而所述厚度控制在具有三维表面的基底上难以实现。
随着集成电路和其它散热电子器件变得更加强效和紧致,就需要增大从这些散热元件散热的热传递速率。因此,对于具有高热传递系数的多孔沸腾表面的开发存在着持续的需求。此外,对于可容易地应用于制造工艺的廉价的多孔沸腾表面也存在着持续的需求。
发明内容
本发明整体涉及热传递涂层。更具体地讲,本发明涉及多孔金属涂层以及制造和使用所述涂层的方法。此类涂层可用来制造用于冷却器件(诸如制冷系统和电子冷却系统)的蒸发器。此类涂层可用于单相或两相热传递系统中。在一些实施例中,该涂层被应用于热虹吸器的锅炉,所述热虹吸器用来冷却集成电路,例如,微处理器。
在一个方面,本公开提供一种热传递涂层,所述涂层包含多个金属体和多个间隙元件,所述间隙元件设置在多个金属体之间并将它们相互连接。金属体包括:内部部分和外部部分,所述内部部分包含选自由下列金属组成的组的第一金属:铝、铜、银、以及它们的合金;所述外部部分包含合金,所述合金包含第一金属和选自由下列金属组成的组的第二金属:铜、银、和镁。间隙元件包括外部部分的合金,并且热传递涂层具有至少10%的有效孔隙度。
在一些实施例中,第一金属包括铜,第二金属包括银,并且间隙元件包括银和铜的合金。在其它实施例中,第一金属包括铝,第二金属包括镁,并且间隙元件包括铝和镁的合金。
在一些方面,金属体在它们的内部部分中包括金刚石。除了第一金属之外,这些金刚石还可用中间涂层涂布,所述中间涂层包含选自由下列元素组成的组的碳化物形成物:铬、钴、锰、钼、镍、硅、钽、钛、钨、钒、锆、以及它们的合金。
在另一方面,本公开提供用于形成热传递涂层的方法。这些方法包括提供具有外表面的散热基底,以及将含有可热移除的粘结剂和多个金属体的组合物沉积到该散热基底上。金属体包括:内部部分和外部部分,所述内部部分包含具有熔融温度为Tmp1的第一金属;所述外部部分包含具有熔融温度为Tmp2的第二金属。然后将该组合物加热至小于Tmp1和Tmp2的温度,以形成包含第一金属和第二金属的合金,所述合金将所述多个金属体相互粘结并且粘结到散热基底上。此工艺称之为等温再凝固。
在另一方面,提供用于使用本公开的热传递涂层来冷却散热器件的方法。
在本公开的上下文中:
术语“有效孔隙度”是指某个本体中互连的孔体积或空隙空间,其促成基体中的流体流动或渗透性。有效孔隙度不包括可能存在于基体中的个别分离的孔。
术语“单元密度”是指每一规定体积中的指定单元的数量。例如,如果如本公开所述的多孔基体包括100个金属体并且占据1立方厘米的体积,则这些金属体的单元密度将为100个金属体/立方厘米。
术语“纵横比”是指三维体的最长尺寸(即,“总长度”)和正交于该总长度尺寸的最长尺寸(即,“总宽度”)的比率。
术语“基本球形”是指具有介于约1和1.5之间的纵横比和大致球形形状的三维体。
术语“三维表面”是指具有凸起部分和凹陷部分的表面,所述部分具有至少0.1毫米的高度差。从凹陷部分到凸起部分的过渡可为逐渐的或陡然的。例如,图1中的锅炉10包括三维表面,所述三维表面具有由翅片20形成的凹陷部分和凸起部分之间的较陡然的过渡。
本公开的上述发明内容不旨在描述本公开的热传递涂层的每一种具体实施的每个公开实施例。其后的附图和具体实施方式会更具体地说明示例性实施例。按端点的数字范围列举包括了该范围内的所有数字(例如,1到5包含1、1.5、2、2.75、3、4、4.80、和5)。
附图说明
图1为具有本公开的热传递涂层的锅炉的透视图;
图2A为用来制造本公开的热传递涂层的两个示例性前体金属体的侧视图;
图2B为图2A所示的两个示例性前体金属体的剖视图;
图2C为图2A所示的两个示例性金属体的侧视图,其中已使用本公开的方法形成了间隙元件以将这两个金属体连接在一起;
图3为本公开的示例性热传递涂层的一部分的示例性透视图;以及
图4为包含带涂层的金刚石的示例性前体金属体的剖视图;以及
图5至7为表示示例性实施例的实验结果的坐标图。
这些图是理想化的,未按比例绘制,旨在仅作为本公开的热传递涂层的示例,并且它们是非限制性的。
具体实施方式
图1为具有本公开的热传递涂层30的锅炉10的透视图。如图1所示,热传递涂层可施加到具有三维表面的锅炉10上。该三维表面可包括一系列突出(诸如翅片20),或包括其它可增大该锅炉的表面积的结构体。
图2A至2C示出形成本公开的热传递涂层的序列方式。这些图为表示结合在一起的两个示例性前体金属体的简化示图。本公开的热传递涂层通常由大量的前体金属体形成,所述金属体在三维多孔基体中结合在一起。
图2A为用来制造本公开的热传递涂层的两个示例性前体金属体的侧视图。如图2A所示,前体金属体200、200’可为约相同的尺寸。在其它实施例中,这些前体金属体可具有不同的尺寸。前体金属体可为基本球形,如图2A所示。
可用于制造根据本公开所述的涂层的前体金属体通常具有至少1微米的平均直径。在一些实施例中,前体金属体具有至少5微米的平均直径。在另一些实施例中,前体金属体具有至少10微米的平均直径。
可用于制造根据本公开所述的涂层的前体金属体通常具有不大于1,000微米的平均直径。在一些实施例中,前体金属体具有不大于500微米的平均直径。在另一些实施例中,前体金属体具有不大于50微米的平均直径。
一些实施例使用具有处在1至2范围内的纵横比的前体金属体。在其它实施例中,前体金属体为椭圆形的并具有大于1.5的纵横比。在另一些实施例中,前体金属体可为多面体(例如,立方八面体)或其它无规形状的金属体,包括,例如,薄片、小片、纤维、板、圆柱体、和针状体。如果前体金属体为非球形的,则金属体的“直径”是指每个金属体中的最小轴的尺寸,并且“平均直径”是指该组群中的各个金属体直径(即,每个金属体中的最小轴的尺寸)的平均值。
图2B为图2A所示的两个示例性前体金属体200、200’的剖视图。如图2B所示,每个前体金属体均包括内部部分250、250’和外部部分240、240’。在一些实施例中,内部部分250、250’包含选自由下列组成的组的金属:铝、铜、银、以及它们的合金。在一些实施例中,外部部分240、240’包含选自由下列金属组成的组的金属:铜、银、镁、以及它们的合金。在另一些实施例中,内部部分包括具有熔融温度为Tmp1的金属,外部部分包括具有熔融温度为Tmp2的金属,并且在加热至小于Tmp1或Tmp2的温度时,形成包含内部部分和外部部分的金属的合金。在一些实施例中,前体金属体的内部部分和外部部分中的金属的选择是基于它们的热导率和/或它们的合金形成特性。
在一些实施例中,外部部分均匀地施加到内部部分上,以使得外部部分具有均匀厚度。在其它实施例中,外涂层的厚度可不同。在一些优选的实施例中,外部部分覆盖内部部分的外表面的大部分。在一些实施例中,外部部分覆盖内部部分的外表面超过90%。在另一些实施例中,外部部分完全覆盖内部部分的外表面。
用来形成外部部分的材料量可用相对重量或厚度来表示。例如,在一些实施例中,外部部分按重量计组成金属体前体的约1%。外部部分通常按重量计组成金属体前体的约0.05至30%。在其它实施例中,外部部分具有0.001至0.5微米范围内的平均厚度。在一些实施例中,外部部分具有0.01至0.05微米范围内的平均厚度。
一种具有铜内部部分和银外部部分的示例性可用的前体金属体可以商品名“SILVER COATED COPPER POWDER #107”得自FerroCorp.,Plainfield,New Jersey。其它可用的前体金属体包括,例如,用镁涂布的铝颗粒。前体金属体可使用本领域中的人员已知的任何方法来形成,包括,例如,物理气相沉积(例如,参见美国专利申请公布2005/0095189A1(Brey等人))、等离子沉积、无电镀、电镀、或浸镀。
图2C为图2A和2B所示的两个示例性前体金属体200、200’的侧视图,它们结合在一起以形成结构体260。如图2C所示,间隙元件270使用本公开的方法形成以将两个金属体连接在一起。间隙元件270通过如下方式形成:使前体金属体经受高温,以使得前体金属体的内部部分和外部部分的金属形成将金属体粘结在一起的合金。此工艺称为等温再凝固。在一些实施例中,可形成共晶体,其与形成合金的各个金属相比具有较低的熔点。共晶体的形成可能是暂时的,因为在等温再凝固过程中的扩散可在各种金属界面的组合中导致连续变化。在一些实施例中,等温再凝固过程发生在还原炉或真空炉中,所述炉(例如)可得自Hayes,Cranston,Rhode Island的VCT型真空炉。
图4为示例性前体金属体的剖视图,其在内部部分中包括带涂层的金刚石。如图4所示,前体金属体的内部部分包括金刚石452、中间涂层454、和第一金属450。外部部分440包含第二金属。涂布金刚石的中间涂层可包含任何已知的碳化物形成物,包括,例如,铬、钴、锰、钼、镍、硅、钽、钛、钨、钒、锆、以及它们的合金。中间涂层可使用本领域中已知的任何技术施加到金刚石上,包括,例如,物理气相沉积、化学气相沉积、熔盐沉积(例如,参见EP 0786506A1(Karas等人))、熔盐中电解、和机械镀覆。在一些实施例中,涂布金刚石的中间涂层包括多层。
虽然不希望受任何理论的约束,但据信包封的金刚石的热导率可增强热传递涂层的性能。在一些实施例中,金刚石(涂布的或未涂布的)可与多个前体金属体(带有或不带有内部金刚石)相组合,以形成具有通过间隙元件结合在一起的金属体和金刚石的混合物的热传递涂层。其它材料也可被包封或与金属体组合,包括,例如,多晶金刚石、人造金刚石、多晶金刚石致密物(PDC)、同位素纯金刚石、以及它们的组合。
如上所述,图2A至2C为简化示图,其表示两个示例性前体金属体结合在一起。本公开的热传递涂层通常由大量的前体金属体形成,所述金属体在三维多孔基体中结合在一起。金属前体金属体中的每个均可结合到1、2、3、4、5、或更多个其它金属前体金属体上,以形成三维多孔基体。
图3为本公开的示例性热传递涂层的一部分的示例性透视图(基底未示出)。如图3所示,热传递涂层360包括通过间隙元件370相互连接以形成三维多孔基体的多个金属体300。间隙元件370也可将金属体300粘结到基底上。
在一些实施例中,本公开的热传递涂层具有约106至1011个金属体/立方厘米范围内的金属体密度。在一些实施例中,本公开的热传递涂层具有约107至109个金属体/立方厘米范围内的金属体密度。
本公开的热传递涂层的孔隙度通常在10至60%的范围内。在一些实施例中,热传递涂层的孔隙度为至少20%。在另一些实施例中,热传递涂层的孔隙度为至少30%。
用来形成间隙元件370的合金也可有利于将热传递涂层360附连到基底上。在一些实施例中,基底具有金属表面,所述表面包含用来形成合金的金属中的至少一种,所述合金形成间隙元件。例如,在一些实施例中,基底包含铜,前体金属体的内部部分包含铜,前体金属体的外部部分包含银,并且所形成的间隙元件包括铜和银的合金,其中将金属体中的一些粘结到基底上的间隙元件的至少一部分包含衍生自基底的铜。
前体金属体可使用任何已知的技术布置在基底上,所述技术用于定位金属体以制造三维多孔基体,所述技术包括,例如,重力、模具、和粘结剂(例如,可热移除的粘结剂)。在一些实施例中,将一薄层的前体金属体放置在基本水平的表面上并将其加热,以形成热传递涂层。在其它实施例中,在等温再凝固步骤之前和期间,可使用周壁(即,模具)来保持前体金属体。在另一些实施例中,在等温再凝固步骤之前和期间,可使用粘结剂来定位前体金属体。
粘结剂可为任何已知的粘结剂,其在等温再凝固过程之前和期间可将前体金属体充分地粘附在一起。可用的粘结剂包括矿物油、硅油、煤油、和聚乙烯缩丁醛。在一些优选的实施例中,粘结剂在再凝固过程期间烧尽,因而基本从所得的热传递涂层中移除。可选择粘结剂以形成具有糊状稠度的浆料。在一些实施例中,可选择粘结剂以使前体金属体可设置在三维表面的各种平面上,包括,例如,垂直平面。
在一些实施例中,使用可以商品名“DOW CORNING 704DIFFUSION PUMP FLUID”得自Dow-Corning Corp.,Midland,Michigan的油混合物、以及可以商品名“NOVEC ENGINEERED FLUIDHFE-72DE”得自3M Co.,St.Paul,Minnesota的流体作为粘结剂。该混合物可使用(例如画家气刷)喷涂到表面上。在施用该混合物之后,可将前体金属体放置到润湿表面上。可重复该过程,直到达到所需厚度。
本公开的热传递涂层通常具有20至1,000微米范围内的平均厚度。在一些实施例中,热传递涂层具有50至500微米范围内的平均厚度。
本公开的热传递涂层可用于冷却系统,例如,热虹吸器。该热传递涂层可直接施加到产热器件或与产热器件热量互通的散热器件上。
本公开的热传递涂层通常具有至少3瓦特/平方厘米/摄氏度的热传递系数,这时的热通量为至少10瓦特/平方厘米。在一些实施例中,本公开的热传递涂层具有至少6瓦特/平方厘米/摄氏度的热传递系数,这时的热通量为至少10瓦特/平方厘米。
本公开的热传递涂层的优点和其它实施例在以下实例中得到进一步说明,但是这些实例中列举的特定材料及其用量、以及其它条件和细节不应当被理解为是对本公开的热传递涂层的不当限定。例如,用来形成前体金属体的金属可以不同。除非另外指明,所有部件和百分比都按重量计。
涂层材料
涂层材料 | 描述 | 来源 |
A | 包含10重量百分比的银和90%的小于15微米的颗粒的带银涂层的铜粉 | #107,得自Ferro Corporation,SouthPlainfield,NJ |
B | 40微米的金刚石 | SMB-5A目325-400,NationalResearch Company,Chesterfield,MI |
C | 将小于325目的铜颗粒使用美国专利申请公开2005/0095189A1所述的工艺溅涂上银。所得的颗粒含有0.4-0.9重量百分比的银。 | #CU-112,Atlantic EquipmentEngineers,Bergenfield,NJ;可得自Academy Precision Materials,Albuquerque,NM的银 |
D | 使用625目筛网收集到的涂层材料C中的小于20微米的颗粒 | |
E | 在涂层材料D中没有被收集到的颗粒构成主要介于625目(20微米)和325目(44微米)之间的颗粒混合物。 | |
F | 将15-25微米的带铜涂层的金刚石(如C中所述)涂布上银。 | Diamond Innovations,Worthington OH |
使用下述方法制备涂层并且进行沸腾实验。
测试方法
液池沸腾1
测试盘由平坦的、直径54毫米、厚2毫米的冲压铜盘制成。将这些盘的一个表面的中心28毫米直径区域大致按下列步骤涂布。首先将待涂布的铜表面用硫酸溶液清洁以移除残余氧化物,然后用水冲洗,接着用丙酮冲洗,然后将其干燥。如果需要的话,可使用蜡纸掩蔽该部件以将涂层限于特定区域。
使用画家气刷将测试盘表面喷涂上3M NOVEC ENGINEEREDFLUID HFE-72de中含50%的Dow 704扩散泵油的混合物。施用此混合物直到该表面被均匀地润湿。然后将该表面扑上颗粒或颗粒混合物,直到油饱和并且过剩颗粒容易脱落。可按需要重复此涂布步骤以达到所需厚度。每进行一次此步骤可使涂层厚度大约增加80微米。
将带涂层的铜盘放进真空炉中。将压力减小至0.001毫米汞柱以下,同时以每分钟约14摄氏度的速率将炉温升高至300摄氏度,并且保持在300摄氏度15分钟以移除油。然后将炉以每分钟约14摄氏度的速率加热至850摄氏度,然后在解除真空并移除该部件之前让其冷却至接近室温。
构建一种装置以允许快速测试许多测试盘。该装置包括带有正方形铜基座的铜底座加热器,所述基座的尺寸为31.8毫米乘31.8毫米,并且高为3.0毫米,并且具有直径为28.5毫米的圆形凸起区域,所述凸起区域从该正方形基座的一个表面突出3.0毫米。将圆形突出的平坦表面磨平并抛光。使用导热环氧树脂(3M Scotch-Weld DP460-EG Al1,可得自3M Company,St.Paul,MN)将25.4毫米乘25.4毫米的Kapton加热器(Minco HK5318 R7.6 L24 E)连接到该正方形基座的暴露表面上。
该加热器镶铸在硅橡胶化合物中,其形成直径为55毫米并且高度为13毫米的盘。该有机硅的顶部表面与加热器的抛光表面齐平。将小热电偶放置在有机硅的顶部,距铜加热器的外径2毫米,用它来测量测试盘温度或壁温Tw。
为了固定测试表面,首先将少量银脂施加到加热器表面上。然后将测试盘放置在有机硅和涂过银脂的加热器表面的顶部上,使得该盘贴压在热电偶上。将带有PTFE垫圈的28毫米内径的玻璃管夹置在测试盘的顶部上,将其周边密封。然后将约20毫升的3M NOVECENGINEERED FLUID HFE-7000(可得自3M Company,St.Paul,MN)通过该管的开放顶部添加进去。将水冷冷凝器盘管插进该管的顶部中。使用处在介于铜盘管底部和流体弯液面顶部之间的区域中的热电偶来测量流体饱和温度Tsat。
自动数据采集系统将DC电压(V)施加到加热器上。此电压以4VDC开始,并且以每3分钟2 VDC的增量增大,直到电压超过预定极限值。在将电压增大至下一个值之前记录每个数据点,对100个温度测量值取平均值。将加热器的热通量(Q”)记录为平均电压的平方除以加热器在其最大温度时的电阻(R),再除以测试盘的带涂层表面的面积:
然后将热传递系数(H)计算为
液池沸腾2
测试盘由5.8cm直径的0.317cm厚的机械加工过的铜盘制成。这些盘的一个表面含有1毫米的热电偶槽,所述槽被机械加工至约2毫米的深度并且终止于盘的中心线处。中心2.54厘米直径的相对表面为涂层表面。将该测试盘用上述步骤涂布和稠和。
此测试方法类似于所述用于液池沸腾1的方法,不同的是测试盘温度Tw用镶嵌在上述盘内的热电偶槽中的热电偶来测量。另外,加热器被构造为能向2.54cm直径的圆形区域递送均匀热通量。如前所述地夹置测试盘,其中将银脂放置在加热器和测试盘之间的界面中。另外,这些测试不终止于预定电压,相反其被允许进行下去,直到盘温度和饱和温度之间的差值超过20摄氏度,这表明表面已干透,因而不再能够保持沸腾(临界热通量,CHF)。
两相强制对流
本公开的热传递制品也可与常规强制对流技术一起使用,以产生可消散高得多的热通量的制品。为了演示起见,建起铜加热器,该加热器可向1毫米乘10毫米的平坦表面递送最多100瓦特功率,这是模拟由激光二极管阵列耗散的功率。使用距加热表面1毫米的热电偶来测算加热器表面温度。将热交换器焊接到此热源上。该热交换器包括焊接表面,其由0.010英寸厚的铜片组成。将1毫米乘10毫米乘0.76毫米厚的多孔基体以与焊接表面或加热表面直接相对的方式稠合到铜片上。将歧管板粘结到这一热传递制品的顶部和所述铜片的边缘上,以允许3M NOVEC ENGINEERED FLUID HFE-7000被强制穿过,并且仅穿过所述多孔基体,从一个10毫米乘0.76毫米表面达到另一个表面。所施加的压力差值可通过测量入口歧管端口处的液柱高度来测量。
实例
按上述步骤制备和测试实例1至9。所用的涂层材料、涂层工艺和测试方法概述于表1中。实例1至8的热传递系数对热通量的关系是用3M NOVEC HFE-7000作为工作流体来测量的。结果显示于图5-7中。
表1
实例 | 涂层材料 | 涂层厚度(微米) | 测试方法 |
1 | C | 250 | 液池沸腾1 |
2 | D | 190 | 液池沸腾1 |
3 | E | 310 | 液池沸腾1 |
4 | 10%B,90%A | 270 | 液池沸腾1 |
5 | 25%B,75%A | 240 | 液池沸腾1 |
6 | 90%B,10%A | 300 | 液池沸腾1 |
7 | D | -- | 液池沸腾2 |
8 | F | -- | 液池沸腾2 |
9 | E | -- | 两相强制对流 |
尽管上述热传递涂层通常能够在达到CHF之前耗散30-45瓦特/平方厘米,但实例9中的热交换器在有30厘米的液压头施加到入口时能够耗散89瓦特/平方厘米。
应当理解,即使在以上描述和实例中,结合热传递涂层的结构和功能的细节阐述了本公开的热传递涂层的众多特性和优点,本公开内容也只是示例性的。在附加权利要求的条款和本公开所述结构或方法的等同物的含义所表达的本公开的原理的最大可能的范围内,可以更改细节,尤其是与金属体的形状和尺寸以及使用方法有关的方面。
Claims (39)
1.一种热传递涂层,包括:
多个金属体,其包括内部部分和外部部分,所述内部部分包含选自由下列金属组成的组的第一金属:铝、铜、银、以及它们的合金;所述外部部分包括含有第一金属和第二金属的合金,所述第二金属选自由下列金属组成的组:铜、银、和镁,其中所述第一金属和所述第二金属不相同;和
多个间隙元件,其设置在所述多个金属体之间并且将它们相互连接,所述间隙元件包括所述外部部分的所述合金;
其中所述热传递涂层具有至少10%的有效孔隙度。
2.根据权利要求1所述的热传递涂层,其中所述第一金属包括铜,所述第二金属包括银。
3.根据权利要求1所述的热传递涂层,其中所述第一金属为铜,所述间隙元件包括银和铜的合金。
4.根据权利要求1所述的热传递涂层,其中所述第一金属包括铝,所述第二金属包括镁。
5.根据权利要求1所述的热传递涂层,其中所述第一金属为铝,所述间隙元件包括铝和镁的合金。
6.根据权利要求1所述的热传递涂层,其中所述内部部分还包括金刚石。
7.根据权利要求6所述的热传递涂层,其中所述金刚石包括中间涂层,所述中间涂层包含选自由下列元素组成的组的碳化物形成物:铬、钴、锰、钼、镍、硅、钽、钛、钨、钒、锆、以及它们的合金。
8.根据权利要求1所述的热传递涂层,其中所述多个金属体的单元密度在107至109个金属体/立方厘米范围内。
9.根据权利要求1所述的热传递涂层,其中所述金属体基本上为球形。
10.根据权利要求9所述的热传递涂层,其中所述金属体具有5至50微米范围内的平均直径。
11.根据权利要求1所述的热传递涂层,其中所述金属体具有1至2范围内的纵横比。
12.根据权利要求1所述的热传递涂层,其中所述涂层具有20至500微米范围内的厚度。
13.根据权利要求1所述的热传递涂层,其中所述热传递涂层具有至少20%的有效孔隙度。
14.一种热传递涂层,包括:
多个复合体,其包括内部部分和外部部分,所述内部部分包含金刚石和选自由下列金属组成的组的第一金属:铝、铜、银、以及它们的合金;所述外部部分包括含有所述第一金属和第二金属的合金,所述第二金属选自由下列金属组成的组:铜、银、和镁,其中所述第一金属和所述第二金属不相同;和
多个间隙元件,其设置在所述多个金属体之间并且将它们相互连接,所述间隙元件包括所述外部部分的所述合金。
15.根据权利要求14所述的热传递涂层,其中所述第一金属包括铜,所述第二金属包括银。
16.根据权利要求14所述的热传递涂层,其中所述第一金属为铜,所述间隙元件包括银和铜的合金。
17.根据权利要求14所述的热传递涂层,其中所述第一金属包括铝,所述第二金属包括镁。
18.根据权利要求14所述的热传递涂层,其中所述第一金属为铝,所述间隙元件包括铝和镁的合金。
19.根据权利要求14所述的热传递涂层,其中所述多个金属体的单元密度在107至109个金属体/立方厘米范围内。
20.根据权利要求14所述的热传递涂层,还包括附连到所述金刚石上的中间涂层,所述中间涂层包含选自由下列元素组成的组的碳化物形成物:铬、钴、锰、钼、镍、硅、钽、钛、钨、钒、锆、以及它们的合金,其中所述第一金属被附连到所述中间涂层上。
21.根据权利要求14所述的热传递涂层,其中所述金属体为立方八面体。
22.根据权利要求14所述的热传递涂层,其中所述金属体具有1至2范围内的纵横比。
23.根据权利要求14所述的热传递涂层,其中所述金属体具有5至50微米范围内的平均直径。
24.根据权利要求14所述的热传递涂层,其中所述涂层具有20至500微米范围内的厚度。
25.根据权利要求14所述的热传递涂层,其中所述热传递涂层具有至少10%的有效孔隙度。
26.一种冷却系统,其包括根据权利要求1所述的热传递涂层。
27.一种冷却系统,其包括根据权利要求14所述的热传递涂层。
28.一种涂布散热基底的方法,包括:
提供具有外表面的散热基底;
将包含粘结剂和多个金属体的组合物沉积到所述散热基底上,所述金属体包括内部部分和外部部分,所述内部部分包含具有熔融温度为Tmp1的第一金属,所述外部部分包含具有熔融温度为Tmp2的第二金属;并且
加热所述组合物至小于Tmp1和Tmp2的温度,以形成包含所述第一金属和所述第二金属的合金,所述合金将所述多个金属体相互粘结并且粘结到所述散热基底上,其中所述多个金属体和所述合金形成具有至少10%的有效孔隙度的多孔基体。
29.根据权利要求28所述的方法,其中所述第一金属选自由下列金属组成的组:铝、铜、银、以及它们的合金。
30.根据权利要求28所述的方法,其中所述第二金属选自由下列金属组成的组:铜、银、镁、以及它们的合金。
31.根据权利要求28所述的方法,其中所述第一金属包括铜,所述第二金属包括银。
32.根据权利要求28所述的方法,其中所述粘结剂选自由下列物质组成的组:矿物油、硅油、煤油、和聚乙烯缩丁醛。
33.根据权利要求28所述的方法,其中所述金属体还包括金刚石。
34.根据权利要求28所述的方法,其中所述散热基底的所述外表面包括三维表面。
35.一种冷却散热器件的方法,包括:
提供具有外表面的散热基底;
将根据权利要求1所述的热传递涂层施加到所述外表面上;和
用冷却液接触所述热传递涂层。
36.根据权利要求35所述的方法,其中所述方法包括单相热传递。
37.根据权利要求35所述的方法,其中所述方法包括两相热传递。
38.根据权利要求37所述的方法,其中所述冷却液包含在热虹吸器内。
39.根据权利要求35所述的方法,所述方法还包括将所述散热基底附连到产热器件上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/268,140 | 2005-11-07 | ||
US11/268,140 US7695808B2 (en) | 2005-11-07 | 2005-11-07 | Thermal transfer coating |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101305646A true CN101305646A (zh) | 2008-11-12 |
Family
ID=38002533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006800416006A Pending CN101305646A (zh) | 2005-11-07 | 2006-11-06 | 热传递涂层 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7695808B2 (zh) |
EP (1) | EP1949777A4 (zh) |
JP (1) | JP2009515054A (zh) |
KR (1) | KR20080066822A (zh) |
CN (1) | CN101305646A (zh) |
TW (1) | TW200733863A (zh) |
WO (1) | WO2007056327A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104080606A (zh) * | 2011-09-14 | 2014-10-01 | 克斯塔里克公司 | 涂覆制品、电沉积浴及相关系统 |
CN106133634A (zh) * | 2014-03-14 | 2016-11-16 | 高通股份有限公司 | 用于减少触摸温度的外表材料设计方案 |
CN107118598A (zh) * | 2017-06-06 | 2017-09-01 | 界首市七曜新能源有限公司 | 气体冷却器外涂层、气体冷却器及其制备方法 |
CN107192175A (zh) * | 2017-06-06 | 2017-09-22 | 界首市七曜新能源有限公司 | 蒸发器内涂层、蒸发器及其制备方法 |
CN110998217A (zh) * | 2017-07-27 | 2020-04-10 | 牛津纳米系统有限公司 | 带有微结构化涂层的热交换元件及其制造方法 |
Families Citing this family (326)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7360581B2 (en) * | 2005-11-07 | 2008-04-22 | 3M Innovative Properties Company | Structured thermal transfer article |
US20090151893A1 (en) * | 2007-12-13 | 2009-06-18 | International Business Machines Corporation | High performance compliant thermal interface cooling structures |
US20090176148A1 (en) * | 2008-01-04 | 2009-07-09 | 3M Innovative Properties Company | Thermal management of electrochemical cells |
US20090269521A1 (en) * | 2008-04-24 | 2009-10-29 | 3M Innovative Properties Company | Porous structured thermal transfer article |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
JP2011011366A (ja) | 2009-06-30 | 2011-01-20 | Sumitomo Electric Ind Ltd | 金属積層構造体の製造方法 |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8323524B2 (en) | 2009-10-01 | 2012-12-04 | 3M Innovative Properties Company | Apparatus including hydrofluoroether with high temperature stability and uses thereof |
JP5583985B2 (ja) | 2010-02-19 | 2014-09-03 | 住友電気工業株式会社 | 金属積層構造体 |
US20110220511A1 (en) * | 2010-03-12 | 2011-09-15 | Xtalic Corporation | Electrodeposition baths and systems |
US9694562B2 (en) | 2010-03-12 | 2017-07-04 | Xtalic Corporation | Coated articles and methods |
US8535559B2 (en) * | 2010-03-26 | 2013-09-17 | 3M Innovative Properties Company | Nitrogen-containing fluoroketones for high temperature heat transfer |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
JP2013115083A (ja) * | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
EP2807347A2 (en) | 2011-12-30 | 2014-12-03 | Scrutiny, INC. | Apparatus comprising frame (forced recuperation, aggregation and movement of exergy) |
WO2013177547A1 (en) * | 2012-05-24 | 2013-11-28 | Purdue Research Foundation | Apparatus and method for increasing boiling heat transfer therein |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
JP6209891B2 (ja) * | 2013-07-29 | 2017-10-11 | アイシン精機株式会社 | 冷却用部材の製造方法 |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
KR20150091905A (ko) * | 2014-02-04 | 2015-08-12 | 엘지전자 주식회사 | 증기 챔버 |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR20200108016A (ko) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102110476B1 (ko) * | 2018-05-17 | 2020-05-13 | 한국세라믹기술원 | 파울링을 감소시키는 보일러 튜브 코팅용 복합 세라믹 코팅재 및 이를 이용한 코팅 방법 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11137220B2 (en) | 2018-06-18 | 2021-10-05 | Purdue Research Foundation | Boiling processes and systems therefor having hydrophobic boiling surfaces |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
TWI815915B (zh) | 2018-06-27 | 2023-09-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
CN112292478A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
CN111593319B (zh) | 2019-02-20 | 2023-05-30 | Asm Ip私人控股有限公司 | 用于填充在衬底表面内形成的凹部的循环沉积方法和设备 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體供應總成以及閥板總成 |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
TW202129068A (zh) | 2020-01-20 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 形成薄膜之方法及修飾薄膜表面之方法 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
TW202140831A (zh) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含氮化釩層及包含該層的結構之方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220006455A (ko) | 2020-07-08 | 2022-01-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3384154A (en) | 1956-08-30 | 1968-05-21 | Union Carbide Corp | Heat exchange system |
US3587730A (en) | 1956-08-30 | 1971-06-28 | Union Carbide Corp | Heat exchange system with porous boiling layer |
US3523577A (en) | 1956-08-30 | 1970-08-11 | Union Carbide Corp | Heat exchange system |
BE757262A (fr) | 1969-10-10 | 1971-04-08 | Union Carbide Corp | Couche metallique poreuse et procede pour la former |
US3753757A (en) | 1970-05-15 | 1973-08-21 | Union Carbide Corp | Two step porous boiling surface formation |
US3689346A (en) | 1970-09-29 | 1972-09-05 | Rowland Dev Corp | Method for producing retroreflective material |
US4064914A (en) | 1974-05-08 | 1977-12-27 | Union Carbide Corporation | Porous metallic layer and formation |
US3990862A (en) | 1975-01-31 | 1976-11-09 | The Gates Rubber Company | Liquid heat exchanger interface and method |
US4129181A (en) | 1977-02-16 | 1978-12-12 | Uop Inc. | Heat transfer surface |
US4381818A (en) | 1977-12-19 | 1983-05-03 | International Business Machines Corporation | Porous film heat transfer |
US4182412A (en) | 1978-01-09 | 1980-01-08 | Uop Inc. | Finned heat transfer tube with porous boiling surface and method for producing same |
US4232056A (en) | 1979-04-16 | 1980-11-04 | Union Carbide Corporation | Thermospray method for production of aluminum porous boiling surfaces |
JPS5788967A (en) * | 1980-11-21 | 1982-06-03 | Showa Alum Corp | Formation of porous layer on metallic surface |
JPS57164292A (en) | 1981-03-31 | 1982-10-08 | Mitsubishi Electric Corp | Boiling heat transfer surface |
US4354550A (en) | 1981-05-07 | 1982-10-19 | The Trane Company | Heat transfer surface for efficient boiling of liquid R-11 and its equivalents |
JPS6057509B2 (ja) * | 1981-11-13 | 1985-12-16 | 日本ダイアクレバイト株式会社 | ステンレス鋼板等を基材とする複合材料の製造方法 |
US4663243A (en) | 1982-10-28 | 1987-05-05 | Union Carbide Corporation | Flame-sprayed ferrous alloy enhanced boiling surface |
JPH0240420B2 (ja) * | 1982-12-24 | 1990-09-11 | Showa Aluminium Co Ltd | Aruminiumuzainohyomennitakoshitsusookeiseisuruhoho |
JPS61273253A (ja) | 1985-05-30 | 1986-12-03 | Mitsubishi Heavy Ind Ltd | 熱交換器の伝熱部及びその製造法 |
US4890669A (en) | 1986-07-02 | 1990-01-02 | Carrier Corporation | Porous coating for enhanced tubes |
JP2916198B2 (ja) * | 1989-03-29 | 1999-07-05 | 日清製粉株式会社 | 超微粒子で表面が被覆された粒子の製造方法 |
US5045972A (en) * | 1990-08-27 | 1991-09-03 | The Standard Oil Company | High thermal conductivity metal matrix composite |
US5570502A (en) | 1991-04-08 | 1996-11-05 | Aluminum Company Of America | Fabricating metal matrix composites containing electrical insulators |
FR2693185B1 (fr) | 1992-07-03 | 1994-08-26 | France Grignotage | Revêtement composite à base de quasi-cristaux et son procédé de fabrication. |
AU2126295A (en) | 1994-03-23 | 1995-10-09 | Board Of Regents, The University Of Texas System | Boiling enhancement coating |
ES2197300T3 (es) | 1996-01-26 | 2004-01-01 | General Electric Company | Abrasivos revestidos para herramientas abrasivas. |
JPH1062096A (ja) | 1996-08-19 | 1998-03-06 | Kubota Corp | 熱交換用部材 |
KR19990050184A (ko) | 1997-12-16 | 1999-07-05 | 이구택 | 방식 및 방열성이 우수한 아연계 무기도료 |
US6196307B1 (en) | 1998-06-17 | 2001-03-06 | Intersil Americas Inc. | High performance heat exchanger and method |
US6896039B2 (en) | 1999-05-12 | 2005-05-24 | Thermal Corp. | Integrated circuit heat pipe heat spreader with through mounting holes |
US20020023733A1 (en) * | 1999-12-13 | 2002-02-28 | Hall David R. | High-pressure high-temperature polycrystalline diamond heat spreader |
JP2002228391A (ja) * | 2001-01-30 | 2002-08-14 | Daikin Ind Ltd | フィン付き空気熱交換器 |
JP2002368168A (ja) | 2001-06-13 | 2002-12-20 | Hitachi Ltd | 半導体装置用複合部材、それを用いた絶縁型半導体装置、又は非絶縁型半導体装置 |
KR100624877B1 (ko) | 2002-07-08 | 2006-09-18 | 한국과학기술연구원 | 젖음성 향상을 위한 습표면 열교환기의 표면처리방법 |
JP2004300415A (ja) | 2003-03-20 | 2004-10-28 | Eco Cosmo:Kk | 塗料及びその製造方法 |
US6994152B2 (en) | 2003-06-26 | 2006-02-07 | Thermal Corp. | Brazed wick for a heat transfer device |
US7109581B2 (en) | 2003-08-25 | 2006-09-19 | Nanoconduction, Inc. | System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler |
BRPI0414788B1 (pt) | 2003-09-26 | 2015-12-22 | 3M Innovative Properties Co | método de preparar um sistema de catalisador, e, sistemas de catalisador heterogêneo, e de proteção respiratória |
US7353860B2 (en) | 2004-06-16 | 2008-04-08 | Intel Corporation | Heat dissipating device with enhanced boiling/condensation structure |
US7360581B2 (en) * | 2005-11-07 | 2008-04-22 | 3M Innovative Properties Company | Structured thermal transfer article |
-
2005
- 2005-11-07 US US11/268,140 patent/US7695808B2/en not_active Expired - Fee Related
-
2006
- 2006-11-06 TW TW095140976A patent/TW200733863A/zh unknown
- 2006-11-06 WO PCT/US2006/043255 patent/WO2007056327A1/en active Application Filing
- 2006-11-06 KR KR1020087012620A patent/KR20080066822A/ko not_active Application Discontinuation
- 2006-11-06 JP JP2008540111A patent/JP2009515054A/ja active Pending
- 2006-11-06 EP EP06837007A patent/EP1949777A4/en not_active Withdrawn
- 2006-11-06 CN CNA2006800416006A patent/CN101305646A/zh active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104080606A (zh) * | 2011-09-14 | 2014-10-01 | 克斯塔里克公司 | 涂覆制品、电沉积浴及相关系统 |
CN106133634A (zh) * | 2014-03-14 | 2016-11-16 | 高通股份有限公司 | 用于减少触摸温度的外表材料设计方案 |
CN106133634B (zh) * | 2014-03-14 | 2019-11-29 | 高通股份有限公司 | 减少触摸温度的方法和设计为减少触摸温度的外表材料 |
CN107118598A (zh) * | 2017-06-06 | 2017-09-01 | 界首市七曜新能源有限公司 | 气体冷却器外涂层、气体冷却器及其制备方法 |
CN107192175A (zh) * | 2017-06-06 | 2017-09-22 | 界首市七曜新能源有限公司 | 蒸发器内涂层、蒸发器及其制备方法 |
CN110998217A (zh) * | 2017-07-27 | 2020-04-10 | 牛津纳米系统有限公司 | 带有微结构化涂层的热交换元件及其制造方法 |
CN110998217B (zh) * | 2017-07-27 | 2021-12-28 | 牛津纳米系统有限公司 | 带有微结构化涂层的热交换元件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070102070A1 (en) | 2007-05-10 |
US7695808B2 (en) | 2010-04-13 |
EP1949777A1 (en) | 2008-07-30 |
KR20080066822A (ko) | 2008-07-16 |
WO2007056327A1 (en) | 2007-05-18 |
EP1949777A4 (en) | 2010-10-13 |
JP2009515054A (ja) | 2009-04-09 |
TW200733863A (en) | 2007-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101305646A (zh) | 热传递涂层 | |
CN101305256B (zh) | 结构化热传递制品 | |
US20090269521A1 (en) | Porous structured thermal transfer article | |
EP1991824B1 (en) | Method for forming a surface layer on a substrate | |
Haack et al. | Novel lightweight metal foam heat exchangers | |
WO2001069160A1 (en) | High performance heat exchange assembly | |
Chen et al. | Fabrication and characterization of ultra-thin vapour chambers with printed copper powder wick | |
Deng et al. | Effects of structural parameters on flow boiling performance of reentrant porous microchannels | |
KR20080032324A (ko) | 발포금속을 이용한 히트싱크 및 이의 제조방법 | |
CN107168493A (zh) | 一种cpu散热方法和装置 | |
TW201808529A (zh) | 研光墊與系統及其製造與使用方法 | |
CN201413076Y (zh) | 一种散热结构 | |
WO2022115050A1 (en) | Performance enhancement in thermal system with porous surfaces | |
Guarino et al. | Fabrication and characterization of an innovative heat exchanger with open cell aluminum foams | |
TWI427256B (zh) | 熱管及其毛細結構之製作方法 | |
JPS58129191A (ja) | 熱パイプ用芯材の形成方法 | |
Sun et al. | Forced boiling of nonazeotropic immiscible mixture in a supercapillary microchannel array for ultra-high heat flux removal with chip junction temperature below 85° C | |
TWI394928B (zh) | A hot plate with single layer diamond particles and its related methods | |
JP2018040530A (ja) | 熱交換器 | |
CN110430716A (zh) | 高效均热板的制备方法 | |
Yip | Effects of Partial Hydrophilic Nano-coating on Micro-scale Flow Boiling Under Non-uniform Heat Flux | |
Zhao et al. | Development of a high performance vapor chamber for high heat flux applications | |
Floyd et al. | Design and evaluation of copper metal foams in cold plates | |
Yang et al. | Pool Boiling Heat Transfer on Vertical Micro Porous Coated Surface in Confined Space | |
Zhang et al. | Analysis and modeling of liquid cooled heat sinks with alternating honeycomb structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20081112 |
|
C20 | Patent right or utility model deemed to be abandoned or is abandoned |