CN101304017A - 烧结的功率半导体基片及其制造方法 - Google Patents

烧结的功率半导体基片及其制造方法 Download PDF

Info

Publication number
CN101304017A
CN101304017A CNA2008100967349A CN200810096734A CN101304017A CN 101304017 A CN101304017 A CN 101304017A CN A2008100967349 A CNA2008100967349 A CN A2008100967349A CN 200810096734 A CN200810096734 A CN 200810096734A CN 101304017 A CN101304017 A CN 101304017A
Authority
CN
China
Prior art keywords
power semiconductor
semiconductor substrate
layer
pressure
articulamentum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2008100967349A
Other languages
English (en)
Other versions
CN101304017B (zh
Inventor
C·格布尔
H·布拉姆尔
U·赫尔曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron Elektronik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik GmbH and Co KG filed Critical Semikron Elektronik GmbH and Co KG
Publication of CN101304017A publication Critical patent/CN101304017A/zh
Application granted granted Critical
Publication of CN101304017B publication Critical patent/CN101304017B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/408—Noble metals, e.g. palladium, platina or silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75314—Auxiliary members on the pressing surface
    • H01L2224/75315—Elastomer inlay
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本发明描述一种功率半导体基片，包括一绝缘的面状的基体、至少一个在至少一个主面上设置的层序列，其包括一薄的粘附连接层、一烧结金属层和一导电层。所属的方法具有以下主要的步骤：对面状的绝缘的基本的至少一个主面的至少一部分表面涂覆粘附连接层；将一由烧结金属和一溶剂制成的膏状层设置在粘附连接层的一部分表面上或整个表面上；将导电层设置在烧结金属层上；对功率半导体基片的导电层施加压力。

Description

烧结的功率半导体基片及其制造方法
技术领域
本发明描述一种功率半导体基片，包括一绝缘的基体和至少一个印制导线。这种功率半导体基片至今例如已知作为AMB(活性的金属铜焊)、DCB(直接的铜粘结)或IMS(绝缘的金属基片)基片。
所述至少一个印制导线用作为例如与功率半导体构件或与内部的和/或外部的连接元件的导电连接。这种与印制导线的连接元件可以例如借助于钎焊技术的连接或借助于压力接触的连接构成。
按照现有技术已知DCB基片，其包括一陶瓷的基体，常常是氧化铝或氮化铝，与在其上设置的由铜膜制成的印制导线。US 4563383公开了例如已知的DCB基片。
对这样的DCB基片不利的是，由于在制造过程中引入高温，紧接制造过程之后或在一以后的过程步骤中，例如在构造一功率半导体模块的过程中基片具有一挠度。根据实验该挠度的已知值在这里为每单位长度约1％。按照应用目的，一定程度的挠度是可接受的，当然大多数应用共同的是，一尽可能小的挠度是有利的。
本发明的目的在于，提供一种具有微小的挠度的功率半导体基片和一种用于这样的功率半导体基片的简单而便宜的制造方法。
按照本发明该目的这样达到，即借助于一种按权利要求5的方法制造一种具有权利要求1的特征的功率半导体基片。优选的实施形式描述于诸从属权利要求中。
本发明的功率半导体基片的出发点是一种绝缘的面状的基体。在其两主面的至少一个上设置至少一个包括一薄的粘附连接层、一烧结金属层和一导电层的层序列。在这里，至少一个这样的层序列构成一功率半导体基片的印制导线。近似于已知的上述的基片方案在这里也优选的是，在基体的一第一主面上设置多个这样的层序列，使其构成各印制导线并且在一第二主面上设置一层序列并且构成一无结构化的接触层用于一冷却构件。
在这方面有利的是，面状的基体是一工业陶瓷例如氧化铝或氮化铝或氮化硅。
此外有利的是，粘附连接层具有一在0.5μm与10μm之间的厚度。优选该粘附连接层还具有一例如电镀沉积的并指向烧结金属层那边的贵金属表面。烧结金属层有利地具有一在5μm与50μm之间的厚度。在这方面优选的是，烧结金属层具有一贵金属例如银的多于90％的份量。
此外优选的是，导电层构成为厚度在100μm与800μm之间的铜膜并且具有一指向烧结金属层那边的贵金属表面。
本发明用于制造一这样的功率半导体基片的方法具有下列主要的步骤：
·对面状的绝缘的基体的至少一个主面的至少一部分表面涂覆粘附连接层；
·将一膏状的由烧结金属和一溶剂制成的层设置在粘附连接层的一部分表面上或整个表面上；
·将导电层设置在烧结金属层上；
·对功率基片施加压力。
在这方面可以优选的是，借助于丝网印刷方法涂覆膏状层。在这种情况下一方面可以达到在要求的层厚时的所需的定位精度。另一方面可便宜地实现该方法。
通过应用一压力机和两冲模可以提供一对膏状层施压的有利的实施形式。在这方面还优选的是，至少一个冲模构成有一在其上设置的产生近似静压压力的硅酮垫。
在这方面优选在功率半导体基片上设置一薄膜，优选一聚四氟乙烯薄膜，并紧接着对该结合施加压力。
该功率半导体基片和制造方法的特别优选的进一步构成列举于实施例的描述中。并且借助图1的实施例进一步说明本发明的方案。
图1示出一本发明的功率半导体基片10。而且在这里进一步说明本发明的制造方法。功率半导体基片10具有一成面状构成的绝缘的基体12。该基体12应该具有一高的电阻同时具有一低的热阻，因此对此特别适用一工业陶瓷，例如氧化铝或氮化铝或氮化硅。在这里氧化铝提供包括这些要求和一便宜的制造一特别好的综合。
为了准备接着的烧结连接，在这里在基体12的两主面120、122上优选整面地涂覆一粘附连接层20、22、24的薄层，其特别的制造方法不是本发明的目标。在这里重要的是，该粘附连接层20、22、24具有一在0.5μm与10μm之间优选的厚度。该粘附连接层20、22、24有利地具有一至少90％的贵金属份量。附加或可选择地，除所述组成外，粘附连接层20、22、24在远离基体12的表面240上具有一例如电镀沉积的贵金属表面。
此外优选可以将该粘附连接层20、22、24整面地涂覆在或待继续处理的主面120、122上并且在另一过程步骤中按照印制导线的以后的形状构造该粘附连接层20、22、24。
在下一过程步骤中例如借助于丝网印刷技术涂覆层厚在5μm与50μm之间的烧结金属层30、32、34。该烧结金属层30、32、34在制造过程的该时刻由一实际的烧结金属的膏状层和一溶剂组成。该烧结金属在这里构成为具有伸展在微米的数量级内的金属片。
由于在烧结过程开始之前应从膏状层中再次排除达至少90％的份量的溶剂，有利的是，对基片10在一适当的时间间隔施加一在350K与450K之间的温度。
在下一步骤中在膏状层上或在烧结金属层30、32、34上设置导电层40、42、44。在这方面在该实施例中涉及一铜膜，其已按印制导线的以后的形状构造。为了有效地导电，该导电层40、42、44具有一在100μm与800μm之间的厚度。
为了很有效地构成烧结连接，导电层40、42、44的铜膜构成有一指向烧结金属层那边的贵金属表面440。
在将导电层40、42、44设置在烧结金属层30、32、34上以后，在导电层40、42、44上导入一压力。在这里可以有利地在施加压力之前，在导电层40、42、44与压力装置的冲模之间设置一薄膜、优选一聚四氟乙烯薄膜，以便保证在施加压力以后由此容易地脱离。
已证明有利的是采用一大于8MPa的最终压力并同时将功率基片10加热到一在350K与600K之间的温度。
作为上述制造方法的替代方案，也可以在基体的一侧面或两侧面上整面地涂覆各一个包括粘附连接层、烧结金属层和导电层的层序列并且在一最后的过程步骤中按照印制导线合理的预定构造。为此湿化学的腐蚀技术是适用的。
本发明的功率半导体基片10的一个优点是，通过基体12和导电层40、42、44的烧结连接构成一可持久保持的和在定性上很高级的连接。由于在烧结过程的范围内加热优选不超过600K，功率半导体基片10的热造成的挠度比在按现有技术的制造方法中显著地减小。
按照本发明的制造关于需要的材料，同样关于一用于功率半导体构件的一加压烧结连接需要的设备按现有技术是相应的。因此一这样的功率半导体基片10的特别有利的制造是可能的，因为这是简单而便宜的。

Claims (10)

1.功率半导体基片(10)，包括一绝缘的面状的基体(12)、至少一个在至少一个主面(120、122)上设置的层序列，所述层序列包括一薄的粘附连接层(20、22、24)、一烧结金属层(30、32、34)和一导电层(40、42、44)。
2.按照权利要求1所述的功率半导体构件，其特征在于，面状的基体(12)是一工业陶瓷。
3.按照权利要求2所述的功率半导体构件，其特征在于，工业陶瓷是氧化铝或氮化铝或氮化硅。
4.按照权利要求1所述的功率半导体构件，其特征在于，粘附连接层(20、22、24)具有一在0.5μm与10μm之间的厚度并且具有一指向烧结金属层(30、32、34)那边的贵金属表面(240)，和/或烧结金属层(30、32、34)具有一在5μm与50μm之间的厚度，和/或导电层(40、42、44)是一厚度在100μm与800μm之间的铜膜并且具有一指向烧结金属层(30、32、34)的贵金属表面(440)。
5.用于制造一按照权利要求1所述的功率半导体基片(10)的方法，包括下列主要的步骤：
对面状的绝缘的基体(12)的至少一个主面(120、122)的至少一部分表面涂覆粘附连接层(20、22、24)；
将一由烧结金属和一溶剂制成的膏状层设置在粘附连接层(20、22、24)的一部分表面上或整个表面上；
将导电层(40、42、44)设置在烧结金属层(30、32、34)上；
对功率半导体基片(10)的导电层(40、42、44)施加压力。
6.按照权利要求5所述的方法，其特征在于，借助于一丝网印刷方法涂覆所述膏状层。
7.按照权利要求5所述的方法，其特征在于，借助于一压力机和两冲模施加压力，其中至少一个冲模构成有一个在其上设置的产生近似静压压力的硅酮垫。
8.按照权利要求5所述的方法，其特征在于，在施加压力时最大的最终压力相当于至少8MPa。
9.按照权利要求5所述的方法，其特征在于，在施加压力的过程中将功率半导体基片(10)加热到在350K与600K之间的温度。
10.按照权利要求5所述的方法，其特征在于，在施加压力之前用一薄膜覆盖功率半导体基片(10)。
CN2008100967349A 2007-05-12 2008-05-09 烧结的功率半导体基片及其制造方法 Expired - Fee Related CN101304017B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007022337.6 2007-05-12
DE200710022337 DE102007022337A1 (de) 2007-05-12 2007-05-12 Gesintertes Leistungshalbleitersubstrat sowie Herstellungsverfahren hierzu

Publications (2)

Publication Number Publication Date
CN101304017A true CN101304017A (zh) 2008-11-12
CN101304017B CN101304017B (zh) 2012-08-22

Family

ID=39642631

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100967349A Expired - Fee Related CN101304017B (zh) 2007-05-12 2008-05-09 烧结的功率半导体基片及其制造方法

Country Status (5)

Country Link
US (1) US20080292874A1 (zh)
EP (1) EP1993133B1 (zh)
JP (1) JP5183294B2 (zh)
CN (1) CN101304017B (zh)
DE (1) DE102007022337A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102265393A (zh) * 2008-12-23 2011-11-30 罗伯特·博世有限公司 电气的或者电子的复合构件以及用于制造该复合构件的方法
CN105848404A (zh) * 2015-01-14 2016-08-10 南京德朔实业有限公司 电动工具及其电路板
WO2018233672A1 (zh) * 2017-06-21 2018-12-27 华为技术有限公司 一种芯片封装结构
CN110999544A (zh) * 2017-08-04 2020-04-10 电化株式会社 陶瓷电路基板

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008055137A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
DE102010020900C5 (de) * 2010-05-18 2013-06-06 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung von Leistungshalbleitersubstraten
DE102010021765B4 (de) * 2010-05-27 2014-06-12 Semikron Elektronik Gmbh & Co. Kg Herstellungsverfahren zur Anordnung zweier Verbindungspartner mittels einer Niedertemperatur Drucksinterverbindung
DE102011005322B4 (de) 2011-03-10 2017-04-06 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines Leistungshalbleitersubstrates
EP2665092B1 (de) * 2012-05-16 2019-02-27 Microdul AG Verfahren zur Herstellung eines Halbleiterelementes auf einem Kupfersubstrat mit dazwischenliegender Isolationsschicht
DE102014203176A1 (de) * 2014-02-21 2015-09-10 MAHLE Behr GmbH & Co. KG Thermoelektrische Vorrichtung, insbesondere thermoelektrischer Generator oder Wärmepumpe
DE102014105000B4 (de) * 2014-04-08 2021-02-25 Infineon Technologies Ag Verfahren zur Herstellung und zum Bestücken eines Schaltungsträgers
DE102018110132B3 (de) * 2018-04-26 2018-11-29 Semikron Elektronik Gmbh & Co. Kg Drucksinterverfahren bei dem Leistungshalbleiterbauelemente mit einem Substrat über eine Sinterverbindung miteinander verbunden werden

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE483459A (zh) * 1947-06-25
US3839660A (en) * 1973-02-05 1974-10-01 Gen Motors Corp Power semiconductor device package
JPS594661B2 (ja) * 1977-10-20 1984-01-31 塩野義製薬株式会社 質量分析計用試料保持体
US4413766A (en) * 1981-04-03 1983-11-08 General Electric Company Method of forming a conductor pattern including fine conductor runs on a ceramic substrate
US4563383A (en) 1984-03-30 1986-01-07 General Electric Company Direct bond copper ceramic substrate for electronic applications
DE3414065A1 (de) * 1984-04-13 1985-12-12 Siemens AG, 1000 Berlin und 8000 München Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung
IN168174B (zh) * 1986-04-22 1991-02-16 Siemens Ag
EP0330896A3 (de) * 1988-03-03 1991-01-09 Siemens Aktiengesellschaft Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben
DE58908749D1 (de) * 1988-03-03 1995-01-26 Siemens Ag Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben.
DE3827893A1 (de) * 1988-08-17 1990-03-01 Hoechst Ceram Tec Ag Verfahren zur stromlosen abscheidung von nickel
US5256274A (en) * 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
JPH04158994A (ja) * 1990-10-19 1992-06-02 High Frequency Heattreat Co Ltd 超微粒子による低温接合方法
US5561321A (en) * 1992-07-03 1996-10-01 Noritake Co., Ltd. Ceramic-metal composite structure and process of producing same
DE4233073A1 (de) * 1992-10-01 1994-04-07 Siemens Ag Verfahren zum Herstellen eines Halbleiter-Modulaufbaus
US5763059A (en) * 1995-03-31 1998-06-09 Kyocera Corporation Circuit board
WO1997001437A1 (en) * 1995-06-28 1997-01-16 Fraivillig Materials Company Circuit board laminates and method of making
JP4077888B2 (ja) * 1995-07-21 2008-04-23 株式会社東芝 セラミックス回路基板
JP3845925B2 (ja) * 1996-02-05 2006-11-15 住友電気工業株式会社 窒化アルミニウム基材を用いた半導体装置用部材及びその製造方法
JP2000294888A (ja) * 1999-04-01 2000-10-20 Kyocera Corp 放熱配線基板
DE10016129A1 (de) * 2000-03-31 2001-10-18 Siemens Ag Verfahren zum Herstellen einer wärmeleitenden Verbindung zwischen zwei Werkstücken
DE10062108B4 (de) * 2000-12-13 2010-04-15 Infineon Technologies Ag Leistungsmodul mit verbessertem transienten Wärmewiderstand
US20040104262A1 (en) * 2001-04-09 2004-06-03 Mears Sarah Jane Use of conductor compositions in electronic circuits
JP2003101184A (ja) 2001-09-27 2003-04-04 Kyocera Corp セラミック回路基板およびその製造方法
US7127809B2 (en) * 2004-03-18 2006-10-31 Northrop Grumman Corporation Method of forming one or more base structures on an LTCC cofired module
DE102004019567B3 (de) * 2004-04-22 2006-01-12 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat
JP2006028804A (ja) * 2004-07-13 2006-02-02 Creator:Kk 河川工事用の流路ユニット
JP2006228804A (ja) * 2005-02-15 2006-08-31 Fuji Electric Holdings Co Ltd 半導体モジュール用セラミックス回路基板及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102265393A (zh) * 2008-12-23 2011-11-30 罗伯特·博世有限公司 电气的或者电子的复合构件以及用于制造该复合构件的方法
CN105848404A (zh) * 2015-01-14 2016-08-10 南京德朔实业有限公司 电动工具及其电路板
WO2018233672A1 (zh) * 2017-06-21 2018-12-27 华为技术有限公司 一种芯片封装结构
CN109103154A (zh) * 2017-06-21 2018-12-28 华为技术有限公司 一种芯片封装结构
CN110999544A (zh) * 2017-08-04 2020-04-10 电化株式会社 陶瓷电路基板
CN110999544B (zh) * 2017-08-04 2024-06-07 电化株式会社 陶瓷电路基板

Also Published As

Publication number Publication date
EP1993133B1 (de) 2018-05-09
US20080292874A1 (en) 2008-11-27
JP5183294B2 (ja) 2013-04-17
CN101304017B (zh) 2012-08-22
DE102007022337A1 (de) 2008-11-20
EP1993133A2 (de) 2008-11-19
EP1993133A3 (de) 2010-09-08
JP2008283184A (ja) 2008-11-20

Similar Documents

Publication Publication Date Title
CN101304017B (zh) 烧结的功率半导体基片及其制造方法
JP5193452B2 (ja) パワー半導体素子とハウジングとを備えた装置の製造方法
JP5852795B2 (ja) 低温加圧焼結接合を含む２個の接合素子の構成体の製造方法
CN110071050B (zh) 一种芯片互连结构及其制备方法
EP3234988B1 (en) Method for sinter-bonding a die, a clip and a substrate using a tack agent
JP6325424B2 (ja) 静電チャック
WO2008127017A1 (en) A thermoelectric module
JP5989465B2 (ja) 絶縁基板の製造方法
KR20180037865A (ko) 세라믹 기판 및 세라믹 기판 제조 방법
CN109216234B (zh) 用于处理半导体衬底的设备和方法
CN105531818B (zh) 半导体装置的制造方法以及半导体装置
CN101304012B (zh) 具有金属接触层的功率半导体基片及其制造方法
CN106851970A (zh) 一种热电分离金属基板的制作方法
WO2020105160A1 (ja) 接合基板の製造方法
JP2013012693A (ja) 半導体モジュール実装方法
US20230113930A1 (en) Temperature-sensor assembly and method for producing a temperature sensor assembly
JP2001358207A (ja) シリコンウェハ支持部材
CN107667419B (zh) 用于制造电路载体的方法
JP7259084B2 (ja) 焼結準備済み銀フィルム
JPH10138052A (ja) 少なくとも１つの金属基板にダイヤモンド基板を結合させる方法
JP2009033168A (ja) 金属コンタクト層を有するパワー半導体素子およびその製造方法
JP2005166821A (ja) ウェーハ保持用静電チャック及びその製造方法
US20190320501A1 (en) All aluminum heater
KR100794960B1 (ko) 하이브리드형 히터 제조방법
EP2811512B1 (en) Circuit board, and electronic device using same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120822

Termination date: 20210509