IN168174B - - Google Patents
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- Publication number
- IN168174B IN168174B IN195/CAL/87A IN195CA1987A IN168174B IN 168174 B IN168174 B IN 168174B IN 195CA1987 A IN195CA1987 A IN 195CA1987A IN 168174 B IN168174 B IN 168174B
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/278—Post-treatment of the layer connector
- H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/838—Bonding techniques
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01005—Boron [B]
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/3025—Electromagnetic shielding
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- H01L2924/351—Thermal stress
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/054—Flat sheets-substrates
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3613572 | 1986-04-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN168174B true IN168174B (zh) | 1991-02-16 |
Family
ID=6299247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN195/CAL/87A IN168174B (zh) | 1986-04-22 | 1987-03-10 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4810672A (zh) |
EP (1) | EP0242626B1 (zh) |
JP (1) | JP2515708B2 (zh) |
BR (1) | BR8701876A (zh) |
DE (1) | DE3770683D1 (zh) |
IN (1) | IN168174B (zh) |
Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3777995D1 (de) * | 1986-12-22 | 1992-05-07 | Siemens Ag | Verfahren zur befestigung von elektronischen bauelementen auf einem substrat, folie zur durchfuehrung des verfahrens und verfahren zur herstellung der folie. |
DE58908749D1 (de) * | 1988-03-03 | 1995-01-26 | Siemens Ag | Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben. |
EP0330896A3 (de) * | 1988-03-03 | 1991-01-09 | Siemens Aktiengesellschaft | Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben |
US4927069A (en) * | 1988-07-15 | 1990-05-22 | Sanken Electric Co., Ltd. | Soldering method capable of providing a joint of reduced thermal resistance |
DE3917765C2 (de) * | 1989-05-31 | 1996-05-30 | Siemens Ag | Verfahren zum Verbinden von zwei scheibenförmigen Körpern aus Materialien unterschiedlicher thermischer Ausdehnungskoeffizienten und dessen Verwendung |
US5118029A (en) * | 1989-11-30 | 1992-06-02 | The Furukawa Electric Co., Ltd. | Method of forming a solder layer on pads of a circuit board and method of mounting an electronic part on a circuit board |
EP0460286A3 (en) * | 1990-06-06 | 1992-02-26 | Siemens Aktiengesellschaft | Method and arrangement for bonding a semiconductor component to a substrate or for finishing a semiconductor/substrate connection by contactless pressing |
EP0477600A1 (de) * | 1990-09-26 | 1992-04-01 | Siemens Aktiengesellschaft | Verfahren zum Befestigen eines mit wenigstens einem Halbleiterbauelement versehenen Halbleiterkörpers auf einem Substrat |
US5693574A (en) * | 1991-02-22 | 1997-12-02 | Deutsche Aerospace Ag | Process for the laminar joining of silicon semiconductor slices |
DE4110318C2 (de) * | 1991-03-28 | 2001-10-11 | Bosch Gmbh Robert | Verfahren zum Zusammenlöten zweier Bauteile |
DE59209470D1 (de) * | 1991-06-24 | 1998-10-01 | Siemens Ag | Halbleiterbauelement und Verfahren zu seiner Herstellung |
US5403783A (en) * | 1992-12-28 | 1995-04-04 | Hitachi, Ltd. | Integrated circuit substrate with cooling accelerator substrate |
DE4315272A1 (de) * | 1993-05-07 | 1994-11-10 | Siemens Ag | Leistungshalbleiterbauelement mit Pufferschicht |
JPH08242009A (ja) | 1994-12-02 | 1996-09-17 | Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg | パワー半導体デバイス |
US5607882A (en) * | 1994-12-20 | 1997-03-04 | Lucent Technologies Inc. | Multi-component electronic devices and methods for making them |
DE59611448D1 (de) * | 1995-09-11 | 2007-12-06 | Infineon Technologies Ag | Verfahren zur Befestigung elektronischer Bauelemente auf einem Substrat durch Drucksintern |
US5967030A (en) | 1995-11-17 | 1999-10-19 | Micron Technology, Inc. | Global planarization method and apparatus |
JP3928753B2 (ja) * | 1996-08-06 | 2007-06-13 | 日立化成工業株式会社 | マルチチップ実装法、および接着剤付チップの製造方法 |
DE19639934A1 (de) * | 1996-09-27 | 1998-04-09 | Siemens Ag | Verfahren zur Flipchip-Kontaktierung eines Halbleiterchips mit geringer Anschlußzahl |
US6331488B1 (en) * | 1997-05-23 | 2001-12-18 | Micron Technology, Inc. | Planarization process for semiconductor substrates |
US6316363B1 (en) | 1999-09-02 | 2001-11-13 | Micron Technology, Inc. | Deadhesion method and mechanism for wafer processing |
US6218316B1 (en) | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
DE10009678C1 (de) * | 2000-02-29 | 2001-07-19 | Siemens Ag | Wärmeleitende Klebstoffverbindung und Verfahren zum Herstellen einer wärmeleitenden Klebstoffverbindung |
DE10016129A1 (de) * | 2000-03-31 | 2001-10-18 | Siemens Ag | Verfahren zum Herstellen einer wärmeleitenden Verbindung zwischen zwei Werkstücken |
AU2001261365A1 (en) * | 2000-05-08 | 2001-11-20 | Brigham Young University | Friction stir weldin of metal matrix composites, ferrous alloys, non-ferrous alloys, and superalloys using superabrasive tool |
US6518172B1 (en) | 2000-08-29 | 2003-02-11 | Micron Technology, Inc. | Method for applying uniform pressurized film across wafer |
DE10062108B4 (de) * | 2000-12-13 | 2010-04-15 | Infineon Technologies Ag | Leistungsmodul mit verbessertem transienten Wärmewiderstand |
DE10140826B4 (de) * | 2000-12-13 | 2005-11-10 | Infineon Technologies Ag | Verfahren zur mehrschrittigen Bearbeitung eines dünnen und unter den Bearbeitungsschritten bruchgefährdeten Halbleiter-Waferprodukts |
US20050277244A1 (en) * | 2002-07-23 | 2005-12-15 | Norbert Galster | Method for fastening microtool components to objects |
DE10334391B4 (de) * | 2003-07-28 | 2005-10-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erzeugung von Verbindungen in der Mikroelektronik |
US20050098613A1 (en) * | 2003-11-07 | 2005-05-12 | Barker William W. | Method for diffusion bond welding for use in a multilayer electronic assembly |
US8257795B2 (en) * | 2004-02-18 | 2012-09-04 | Virginia Tech Intellectual Properties, Inc. | Nanoscale metal paste for interconnect and method of use |
DE102004019567B3 (de) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
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-
1987
- 1987-03-10 IN IN195/CAL/87A patent/IN168174B/en unknown
- 1987-03-25 EP EP19870104440 patent/EP0242626B1/de not_active Expired - Lifetime
- 1987-03-25 DE DE8787104440T patent/DE3770683D1/de not_active Expired - Lifetime
- 1987-03-25 US US07/029,819 patent/US4810672A/en not_active Expired - Lifetime
- 1987-04-17 JP JP9611787A patent/JP2515708B2/ja not_active Expired - Lifetime
- 1987-04-21 BR BR8701876A patent/BR8701876A/pt unknown
Also Published As
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---|---|
US4810672A (en) | 1989-03-07 |
DE3770683D1 (de) | 1991-07-18 |
JP2515708B2 (ja) | 1996-07-10 |
EP0242626A3 (en) | 1989-01-25 |
BR8701876A (pt) | 1988-01-26 |
EP0242626B1 (de) | 1991-06-12 |
JPS62254439A (ja) | 1987-11-06 |
EP0242626A2 (de) | 1987-10-28 |