CN101300671A - 电子元件键合方法 - Google Patents
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Abstract
第一电子元件(1),特别是半导体芯片,以及第二电子元件(2),特别是衬底,每一电子元件均具有主表面,通过在每一主表面上施加至少一层包含铟层的金属层(3,3’),使得第一电子元件和第二电子元件相互键合。从而半导体芯片以及衬底的主表面相互面对,而相互相对排列。所述芯片、衬底以及两者之间的金属层(3,3’)形成装置,被放入加压工具。然后在加压工具中以10到35MPa的压力对所述装置施加压力,并在230℃到275℃的范围内加热,在所述温度和压力下,电子元件(1,2)被键合在一起。加压过程是在其中为含氧气氛的加压工具中实施的。
Description
技术领域
本发明涉及功率电子领域。特别是涉及电子元件键合方法。
背景技术
在文献(Silver-Indium joints produced at low temperature for hightemperature devices by Chuang et al.,IEEE Transactions on components andpackaging technologies vol.25,2002,p.453-458)中,描述了一种键合硅芯片到硅衬底的方法。在真空度约为0.1mPa的热蒸镀腔内,在硅芯片和硅衬底上蒸镀形成多层膜。首先在衬底上形成0.03微米的铬层以提高粘接性,然后是0.05微米的金层,之后是5.0微米的银层并在其顶部蒸镀0.06微米的金层。硅芯片上的银层被作为其下面铟层的保护层。在硅芯片上形成0.025微米的铬层,之后形成1.9微米的铟层以及0.21微米的银层。所述芯片和衬底相互相对排列,金属层相互面对。然后,对所述芯片和衬底以及之间的多层结构组成的装置施加0.5Mpa的静态压力,以保证芯片和衬底之间的紧密接触。放置所述装置到管式炉中。首先在炉中充填氮气,之后利用氢气冲洗清除所述装置中的氧。然后炉管在氢气气氛中在7分钟内加热到206℃,以抑制在高温下氧化铟的形成,因为在如此周围环境中,仅仅只有银层并不能有效的保护以防止氧化铟形成。然后温度降低到低于145℃的退火温度保持26小时。银-铟接合转化为富含银的银-铟合金,形成接合的熔融温度为765℃到780℃。所述接合近似无空隙。然而,这种方法比较复杂,需要惰性气体以及专用于在里面使用惰性气体的炉子。另外,通常由夹具负载来施加为了达到紧密接触所需要的高压力,这样需要非常精确的机器容差,否则就会导致空隙以及不完全键合。芯片和衬底之间的多层结构相互相对排列需要利用高精密的夹具。如果硅芯片或衬底没有平坦的表面,则很难对装置施加所需要的压力而不使元件破裂。
在EP0416847中也描述了一种利用钎焊焊接硅芯片到钼或钨元件的方法,其中利用银层和铟层作为钎焊材料。在压力为0.3Mpa的真空炉中保持175℃两小时以实施该键合工序。
在文献(A fluxless process of producing tin-rich gold-tin joints in air byChuang et al.,IEEE Transactions on components and packaging technologiesvol.27,2004,p.177-181)中,描述了一种利用锡-金接合键合硅晶片到硅衬底的方法。硅晶片具有一层铬金属化层,之后为金金属化层,而硅衬底上首先形成铬金属化层,之后是锡以及上边的锡-金金属化层。对所述晶片和衬底以及之间的金属层施加0.6Mpa的压力。所述装置插入炉中并保持1000℃。测量金属层的温度。当金属层中温度到达键合温度220℃时,冷却所述装置,其中温度到达所述键合温度大约需要30秒。由于热要到达金属层则必须穿透衬底和晶片,因此在这种方法中必须将衬底和晶片加热到很高的温度。炉子所保持的高温必须具有非常高的升温速率,由此得到短的键合时间。这种方法并不太实用,因为敏感电子元件被加热到比键合温度更高的温度。即使测量点的微小变化,如温度测量与冷却步骤开始之间的时间延迟、或电子元件和/或金属层厚度的变化均对中心键合温度具有很大影响,因此很可能造成热分布的不均匀,并导致不均匀熔融,并且键合中很有可能带有空隙。
在US4810672中展示了一种在上边设置银层的半导体闸流管,以及衬底,在衬底上边设置铝和钛层,之后设置银层。所述元件相互相对排列,然后将装置插入到加压夹具。施加至少15Mpa的压力,并在230℃的温度下保持不到1分钟。在空气环境下实施加压烧结。该方法在加压烧结之前将银浆涂敷在电子元件上。
发明内容
本发明目的是提供一种可靠稳健的电子元件键合方法,其易于实施且可以避免在惰性气体环境中实施键合工序。
所述目的通过权利要求1所述的电子元件键合方法来实现。
根据本发明的电子元件键合方法中,第一电子元件,特别是半导体芯片,以及第二电子元件,特别是衬底,在键合工序中相互贴合。每一电子元件具有主表面,所述方法包括以下步骤:
-在所述电子元件的每一主表面上施加至少一层包含铟层的金属层,
-第一和第二电子元件的主表面相互面对排列,第一和第二电子元件以及之间的至少一层金属层形成装置,以及
-将所述装置放入加压工具。
所述方法特征在于,在加压工具中以10到35Mpa的压力对所述装置施加压力,并在230℃到275℃的范围内加热。加压工序是在其中为含氧气体气氛的加压工具中实施的。在键合过程中,也就是在对装置的加压和加热过程中,在加压工具中利用氧气,即不用实施特别预防措施以避免所述装置在键合过程中与氧气接触。
在如此高温高压下实施的包括加热和加压步骤的键合工序中,不必在惰性气体环境中实施。由于高温高压,缩短了加压和加热处理的时间,金属层在铟的氧化层形成之前形成了稳定的接合。所述键合方法可以在空气环境中实施,即,更通常是在含氧气氛中实施,因此不需要非常复杂的、内部使用惰性气体环境的键合设备,而可以使用内部为含氧气氛特别是空气气氛的标准键合设备。因此提供了一种形成坚固且几乎无空隙焊接接点的稳健方法。只要材料可被金属化并且可以忍受键合工序中必须的温度和压力,则可以键合各种不同材料。被加热的装置各部分都不会超过与键合温度相应的施加到所述装置上的温度。
在一个优选实施例中,至少一个电子元件由在被压缩之前设置在至少一个电子元件主表面相反侧的弹性变形的保护层所保护。有利的保护层包括橡胶,橡胶为一种柔性材料,且具有很好的弹性以及压缩特性。这样的保护层很便宜而且不必根据装置的外部形状而预先形成。因为弹性变形保护层可以自适应于装置的外部形状,因此降低了破裂的危险,甚至可以补偿装置外部形状的各种变化。
由从属权利要求中则显而易见根据本发明的其它优点。
附图说明
参考附图,本发明的主题将在以下文字中得到更为详细的说明,在附图中:
图1示出根据本发明的键合电子元件方法的第一实施例;
图2示出在加压工序之前根据本发明的键合电子元件方法的另一实施例;
图3示出处于加压状态下的图2所示实施例;和
图4示出根据本发明的键合电子元件方法的又一实施例。
通常地,相同的或具有相同功能的部分利用相同的参考标记。该具体实施例只是作为实例而不是对本发明的限制。
具体实施方式
图1示出根据本发明方法的第一实施例。第一电子元件1具有主表面,在其上设置至少一层金属层3,特别是与第一电子元件的主表面相邻来设置铬层,之后设置铟层以及上边的银层。第二电子元件2具有主表面,在其上设置至少一层金属层3’,特别是与第二电子元件的主表面相邻来设置铬层,之后设置金层、银层和另一金层。铬层用来提高接合的粘附力。所述第一和/或第二电子元件1、2可以由任何能被金属化的材料构成,所述金属化可以通过例如蒸镀或溅射来实现,且所述材料能够承受在键合过程中所施加的温度和压力。这些电子元件特别是半导体芯片、衬底、金属层、硅层、金属化复合材料或金属基体材料。
在电子元件1、2上施加金属层3、3’,所述施加是通过将第一电子元件1放置在热蒸发腔内,然后在第一电子元件1的主表面上蒸镀至少一层金属层3。然后将第二电子元件2放置在热蒸发腔内,在第二电子元件2的主表面上蒸镀至少一层金属层3’。可替换地,金属层3、3’可以通过溅射方式施加在电子元件1、2的主表面上。
在第一电子元件1的主表面上配置的至少一层金属层3与在第二电子元件2的主表面上配置的至少一层金属层3’可互换。也可以利用其它金属层3、3’以形成接合。
在图1所示的本发明方法的实施方式中,第一和第二电子元件1、2的主表面相互面对而相互相对排列,且金属层3、3’配置在电子元件1、2之间。所述装置被放入压塑压机或压缩夹具的顶部压板和底部压板4、5之间,在第一电子元件1和顶部压板4之间放置弹性变形保护层6和/或在第二电子元件2和底部压板5之间放置弹性变形保护层6’。由此,电子元件1和/或2在加压过程中得到保护。如图1所示,所述底部压板,包括压板51和压板52以及以三明治结构形成在两压板51和52之间的热板53。以这种方式来构造压板52,则可以很容易地从热板53通过压板52向所述装置进行热传输,因此加热装置中的金属层。通过将热板53配置在两压板51和52之间,以使得热均匀分布,因此所述装置被均匀加热。底部压板5也可以构造为其顶部包括热板53的一块压板,以简化压板构造。同样热板也可以配置在顶部压板中以加热所述装置。
然后对所述装置施加10到35Mpa的静态压力。在一个优选实施例中施加压力范围为30到35Mpa。施加如此大的压力以保证在第一和第二电子元件1、2的金属层3、3’之间的整个表面上形成良好接触。然后通过加热热板53来对所述装置进行加热。热穿透压板52并且被传输到第一和第二电子元件1、2主表面上的金属层3、3’,金属层3、3’通过热被键合。该加热处理实施的温度范围为230℃到275℃,优选是对所述装置施加230℃到250℃范围的热。如果温度太低,则键合时间变长而增加了铟层被氧化的可能性。同时在低温下不均匀的热分布会导致不均匀熔融以及带有空隙的键合。如果温度过高,由于来自熔融金属层的挤压以及铟层的氧化则会造成键合不规则和接合不良。
对所述装置施加3到5分钟的热,加热时间由所施加的温度以及电子元件1、2和金属层3、3’的尺寸和厚度所决定。然后将所述装置冷却到环境温度。在如此短时间进行加热,同时施加高压高温,即使在含氧气氛中,特别是在空气气氛中实施键合工序,即加压和加热处理,也能产生几乎无空隙的银-铟接合且避免铟层被氧化的危险。
在无图示的一个优选实施例中,所述装置在加压和加热处理之前,被放置在预型体中,所述预型体具有由一个或多个定位工具预先确定的所述装置元件的相对位置。所述预型体有助于避免元件无意的位移,特别是横向位移。所述预型体可以由刚性材料或弹性变形材料构成。如果预型体由刚性材料构成,所述预型体可以被非常精确地构建,因此当元件1、2被放置在预型体中时,可以很好地定义元件1、2的相对位置。如果预型体由弹性变形材料形成,则可以补偿升高温度所造成的膨胀、元件外形的偏差或错误。所述预型体同样可以包括顶部和/或底部层,优选是弹性变形材料如橡胶,因此所述装置的不同部分均得到保护,避免在键合工序中施加压力时可能导致的横向位移以及元件破裂。
图2和3示出了本发明方法的另一实施例。在图2中具有电子元件1、2的装置由两弹性变形保护层6、6’所保护,所述保护层6、6’分别设置在电子元件1、2主表面的相反侧。所述装置被放入压塑压机或压缩夹具。图2示出在非压力状态下的所述装置以及保护层6、6’,分别由指向压塑压机或压缩夹具的压板4和5的长箭头描述。图3示出加压状态下的所述装置以及保护层6、6’,由短箭头描述。在一个优选实施例中,所述两个保护层6、6’在加压状态下相互接触并形成紧密封装。在加压状态下,残留在所述装置和保护层6、6’之间的空气也被压缩,并形成流体压缩方式,由此提高所述装置的压缩性。
同样可以用凹槽预先形成至少一保护层6、6’,来替代利用至少一平坦的保护层6、6’,其中可以将所述装置放置在所述凹槽内,以在键合过程中可以对所述装置的各部分施加更为均匀的压力,也避免所述装置各部分的横向位移,即避免任意电子元件1、2和/或任意金属层3、3’之间的位移。如果利用两保护层6、6’,则这些层也可以是一种通用保护层,以U-形将该通用保护层设置在所述装置周围,或者这些层也可以是一种通用保护袋,该通用保护袋在一侧开口并在该侧将所述装置放入。
如果利用两层单独的保护层6、6’,从两相反侧将其嵌入所述装置,保护层6、6’的厚度和弹性可以通过这种方式进行选择,使得在被压缩阶段保护层6、6’相互接触(如图3所示),由此限制可能施加在所述装置上的最大压力,并降低破裂的危险性。
图4示出本发明方法的又一实施例。图4示出处于被压缩状态的所述装置和保护层,由箭头描述。在加压处理之前,所述装置由弹性变形保护层所保护,在图4中所述保护层具有封装7的形式,该封装7至少在两相反侧保护所述装置,所述两相反侧为与电子元件的主表面相反的两侧。所述封装7可以由例如橡胶或其它任何能忍受键合温度和压力的材料构成。所述封装7以及插入其中的所述装置被放入具有均衡压力的加压室8。在升温时利用压缩空气的方法对所述封装7以及插入其中的所述装置加压,如图4中箭头所示。也可以利用其它流体(气体或液体)来压缩所述装置。所述流体在所述装置上形成均匀的压力,以避免机械应力的危险,该应力可能导致电子元件1、2的破裂。另外,在所述装置被放入封装7之前,所述装置被放置在预型体中由一个或多个定位工具在加压和加热处理之前预先确定的所述装置元件的相对位置。也可以将所述装置插入到弹性盖中,并密封所述弹性盖以避免所述液体与所述装置直接接触。
附图标记表
1 第一电子元件
2 第二电子元件
3、3’ 金属层
4 顶部压板
5 底部压板
51、52 压板
53 热板
6、6’ 保护层
7 弹性变形封装
8 加压室
Claims (10)
1.一种电子元件键合方法,
其中第一电子元件(1),特别是半导体芯片,以及第二电子元件(2),特别是衬底,在键合工序中相互固定,每一个电子元件(1,2)都具有主表面,所述方法包括以下步骤:
-在所述电子元件(1,2)的每一主表面上设置包含铟层的至少一层金属层(3,3’),
-所述第一和第二电子元件(1,2)的主表面相互面对,而相互相对排列,第一和第二电子元件(1,2)以及之间的至少一层金属层(3,3’)形成装置,以及
-将所述装置放入加压工具,
其特征在于:
-以10到35Mpa的压力对所述装置施加压力,并且
-加压工序在其中为含氧气体气氛的加压工具中实施,并且
-在230℃到275℃的范围内加热所述装置。
2.如权利要求1所述的方法,其特征在于,所述含氧气体为空气。
3.如权利要求1或2所述的方法,其特征在于,以30到35Mpa的压力对所述装置施加压力和/或在230℃到250℃的范围内加热所述装置。
4.如权利要求1-3中任一项所述的方法,其特征在于,实施加热处理时间为3到5分钟。
5.如权利要求1-4中任一项所述的方法,其特征在于,所述至少一层金属层(3,3’)包含银层。
6.如权利要求1或5所述的方法,其特征在于,通过溅射或蒸镀方法在所述电子元件的所述主表面上施加所述至少一层金属层(3,3’)。
7.如前述权利要求之一所述的方法,其特征在于,在被加压之前,所述电子元件(1,2)至少其中之一由设置在所述至少一个电子元件(1,2)所述主表面相反侧上的弹性变形保护层(6,6’)所保护,特别是,保护层(6,6’)包括橡胶。
8.如前述权利要求之一所述的方法,其特征在于,所述加压工具为压塑压机,特别是压缩夹具或恒静压力机的加压室。
9.如前述权利要求之一所述的方法,其特征在于,所述装置被插入到预型体中,所述预型体包括一个或多个定位工具,通过所述一个或多个定位工具,预先确定所述第一和第二电子元件(1,2)的相应位置。
10.如权利要求1所述的方法,其特征在于,所述电子元件(1,2)的至少其中之一包括硅层、金属层、金属化陶瓷复合材料层和/或金属基体材料层。
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102120562A (zh) * | 2010-11-09 | 2011-07-13 | 北京理工大学 | 芯片键合辅助加压装置 |
CN103337464A (zh) * | 2013-06-03 | 2013-10-02 | 中国电子科技集团公司第二十六研究所 | 一种新型金属扩散键合工艺 |
CN104299953A (zh) * | 2013-07-18 | 2015-01-21 | 英飞凌科技股份有限公司 | 电子器件和用于制造电子器件的方法 |
CN105304512A (zh) * | 2014-07-28 | 2016-02-03 | 西门子公司 | 用于制造功率模块的方法以及功率模块 |
CN106952835A (zh) * | 2015-12-15 | 2017-07-14 | 英飞凌科技股份有限公司 | 半导体芯片与衬底连接的方法以及制造电子组件的方法 |
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DE102010020900C5 (de) * | 2010-05-18 | 2013-06-06 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung von Leistungshalbleitersubstraten |
DE102011080929B4 (de) * | 2011-08-12 | 2014-07-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines Verbundes und eines Leistungshalbleitermoduls |
US9673163B2 (en) * | 2011-10-18 | 2017-06-06 | Rohm Co., Ltd. | Semiconductor device with flip chip structure and fabrication method of the semiconductor device |
US20140061921A1 (en) * | 2012-09-05 | 2014-03-06 | Alcatel-Lucent Usa, Incorporated | Gold bonding in semiconductor devices using porous gold |
EP2800131A1 (en) * | 2013-04-29 | 2014-11-05 | ABB Technology AG | Method for sinter bonding semiconductor devices |
US20160172327A1 (en) * | 2013-06-21 | 2016-06-16 | University Of Connecticut | Low-Temperature Bonding and Sealing With Spaced Nanorods |
KR101620589B1 (ko) | 2014-11-26 | 2016-05-13 | 한국기계연구원 | 웨이퍼 본딩 장치 |
US10861775B2 (en) * | 2018-09-28 | 2020-12-08 | Semiconductor Components Industries, Llc | Connecting clip design for pressure sintering |
DE102020204164A1 (de) | 2020-03-31 | 2021-09-30 | Siemens Aktiengesellschaft | Werkstückträger und Form zum Fügen eines elektrischen Schaltungsträgers |
DE102022123324A1 (de) * | 2022-09-13 | 2024-03-14 | Ams-Osram International Gmbh | Verfahren zum herstellen eines elektronischen bauelements |
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IN168174B (zh) * | 1986-04-22 | 1991-02-16 | Siemens Ag | |
GB8920101D0 (en) * | 1989-09-06 | 1989-10-18 | Marconi Electronic Devices | Methods of joining components |
DE19747846A1 (de) | 1997-10-30 | 1999-05-06 | Daimler Benz Ag | Bauelement und Verfahren zum Herstellen des Bauelements |
DE10062108B4 (de) * | 2000-12-13 | 2010-04-15 | Infineon Technologies Ag | Leistungsmodul mit verbessertem transienten Wärmewiderstand |
EP1280196A1 (de) * | 2001-07-18 | 2003-01-29 | Abb Research Ltd. | Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten |
EP1310990A1 (en) * | 2001-11-09 | 2003-05-14 | Abb Research Ltd. | Bonding method with improved alignment |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102120562A (zh) * | 2010-11-09 | 2011-07-13 | 北京理工大学 | 芯片键合辅助加压装置 |
CN103337464A (zh) * | 2013-06-03 | 2013-10-02 | 中国电子科技集团公司第二十六研究所 | 一种新型金属扩散键合工艺 |
CN103337464B (zh) * | 2013-06-03 | 2016-01-20 | 中国电子科技集团公司第二十六研究所 | 一种新型金属扩散键合工艺 |
CN104299953A (zh) * | 2013-07-18 | 2015-01-21 | 英飞凌科技股份有限公司 | 电子器件和用于制造电子器件的方法 |
CN104299953B (zh) * | 2013-07-18 | 2020-08-21 | 英飞凌科技股份有限公司 | 电子器件和用于制造电子器件的方法 |
CN105304512A (zh) * | 2014-07-28 | 2016-02-03 | 西门子公司 | 用于制造功率模块的方法以及功率模块 |
CN106952835A (zh) * | 2015-12-15 | 2017-07-14 | 英飞凌科技股份有限公司 | 半导体芯片与衬底连接的方法以及制造电子组件的方法 |
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