CN103337464A - 一种新型金属扩散键合工艺 - Google Patents
一种新型金属扩散键合工艺 Download PDFInfo
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- CN103337464A CN103337464A CN2013102158087A CN201310215808A CN103337464A CN 103337464 A CN103337464 A CN 103337464A CN 2013102158087 A CN2013102158087 A CN 2013102158087A CN 201310215808 A CN201310215808 A CN 201310215808A CN 103337464 A CN103337464 A CN 103337464A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 title claims abstract description 42
- 238000009792 diffusion process Methods 0.000 title claims abstract description 28
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 15
- 238000002788 crimping Methods 0.000 abstract description 5
- 238000007789 sealing Methods 0.000 abstract 3
- 230000000630 rising effect Effects 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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Abstract
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CN201310215808.7A CN103337464B (zh) | 2013-06-03 | 2013-06-03 | 一种新型金属扩散键合工艺 |
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CN201310215808.7A CN103337464B (zh) | 2013-06-03 | 2013-06-03 | 一种新型金属扩散键合工艺 |
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CN103337464A true CN103337464A (zh) | 2013-10-02 |
CN103337464B CN103337464B (zh) | 2016-01-20 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106908970A (zh) * | 2017-03-06 | 2017-06-30 | 中国电子科技集团公司第二十六研究所 | 声光晶体与换能器键合结构 |
CN107919862A (zh) * | 2017-12-28 | 2018-04-17 | 中国电子科技集团公司第二十六研究所 | 一种声表面波器件气密性晶圆级封装结构和工艺 |
CN108011035A (zh) * | 2017-12-13 | 2018-05-08 | 中国电子科技集团公司第二十六研究所 | 一种压电陶瓷片的键合方法 |
CN110401096A (zh) * | 2018-04-24 | 2019-11-01 | 福州高意光学有限公司 | 一种高效率声光调q器件 |
CN111121843A (zh) * | 2019-12-18 | 2020-05-08 | 上海交通大学 | 一种声表面波传感器的一体化封装结构及封装方法 |
CN111370339A (zh) * | 2020-03-20 | 2020-07-03 | 中国科学院半导体研究所 | 晶圆的室温等静压金属键合方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030148596A1 (en) * | 2002-02-06 | 2003-08-07 | Kellar Scot A. | Wafer bonding for three-dimensional (3D) integration |
CN101295753A (zh) * | 2007-04-24 | 2008-10-29 | 中国科学院上海微系统与信息技术研究所 | 用于III-V族化合物器件的低温Au-In-Au键合方法 |
CN101300671A (zh) * | 2005-11-02 | 2008-11-05 | Abb研究有限公司 | 电子元件键合方法 |
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2013
- 2013-06-03 CN CN201310215808.7A patent/CN103337464B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030148596A1 (en) * | 2002-02-06 | 2003-08-07 | Kellar Scot A. | Wafer bonding for three-dimensional (3D) integration |
CN101300671A (zh) * | 2005-11-02 | 2008-11-05 | Abb研究有限公司 | 电子元件键合方法 |
CN101295753A (zh) * | 2007-04-24 | 2008-10-29 | 中国科学院上海微系统与信息技术研究所 | 用于III-V族化合物器件的低温Au-In-Au键合方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106908970A (zh) * | 2017-03-06 | 2017-06-30 | 中国电子科技集团公司第二十六研究所 | 声光晶体与换能器键合结构 |
CN106908970B (zh) * | 2017-03-06 | 2019-09-13 | 中国电子科技集团公司第二十六研究所 | 声光晶体与换能器键合结构 |
CN108011035A (zh) * | 2017-12-13 | 2018-05-08 | 中国电子科技集团公司第二十六研究所 | 一种压电陶瓷片的键合方法 |
CN107919862A (zh) * | 2017-12-28 | 2018-04-17 | 中国电子科技集团公司第二十六研究所 | 一种声表面波器件气密性晶圆级封装结构和工艺 |
CN110401096A (zh) * | 2018-04-24 | 2019-11-01 | 福州高意光学有限公司 | 一种高效率声光调q器件 |
CN111121843A (zh) * | 2019-12-18 | 2020-05-08 | 上海交通大学 | 一种声表面波传感器的一体化封装结构及封装方法 |
CN111121843B (zh) * | 2019-12-18 | 2021-03-02 | 上海交通大学 | 一种声表面波传感器的一体化封装结构及封装方法 |
CN111370339A (zh) * | 2020-03-20 | 2020-07-03 | 中国科学院半导体研究所 | 晶圆的室温等静压金属键合方法 |
CN111370339B (zh) * | 2020-03-20 | 2022-02-22 | 中国科学院半导体研究所 | 晶圆的室温等静压金属键合方法 |
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Publication number | Publication date |
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CN103337464B (zh) | 2016-01-20 |
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Effective date of registration: 20190711 Address after: 401332 367, West Wing Road, Xiyong Town, Shapingba District, Chongqing Patentee after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: No. 14 Nanping Garden Road, Nanan District, Chongqing 400060 Patentee before: China Electronics Technology Group Corporation No.26 Research Institute |
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Effective date of registration: 20201228 Address after: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Patentee after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute Address before: 401332 367, West Wing Road, Xiyong Town, Shapingba District, Chongqing Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC Co.,Ltd. |
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Effective date of registration: 20220527 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
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Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Country or region after: China Address before: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Country or region before: China |