CN101246901B - 半导体晶体管器件及其制造方法 - Google Patents

半导体晶体管器件及其制造方法 Download PDF

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Publication number
CN101246901B
CN101246901B CN2008100099100A CN200810009910A CN101246901B CN 101246901 B CN101246901 B CN 101246901B CN 2008100099100 A CN2008100099100 A CN 2008100099100A CN 200810009910 A CN200810009910 A CN 200810009910A CN 101246901 B CN101246901 B CN 101246901B
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CN
China
Prior art keywords
lateral portion
region
type
type doped
dopant concentration
Prior art date
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Expired - Fee Related
Application number
CN2008100099100A
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English (en)
Chinese (zh)
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CN101246901A (zh
Inventor
李孟烈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101246901A publication Critical patent/CN101246901A/zh
Application granted granted Critical
Publication of CN101246901B publication Critical patent/CN101246901B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2008100099100A 2007-02-14 2008-02-13 半导体晶体管器件及其制造方法 Expired - Fee Related CN101246901B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020070015390A KR100847306B1 (ko) 2007-02-14 2007-02-14 반도체 장치 및 이의 제조 방법
KR10-2007-0015390 2007-02-14
KR1020070015390 2007-02-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2012104543756A Division CN102938412A (zh) 2007-02-14 2008-02-13 半导体晶体管器件

Publications (2)

Publication Number Publication Date
CN101246901A CN101246901A (zh) 2008-08-20
CN101246901B true CN101246901B (zh) 2013-01-02

Family

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Family Applications (2)

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CN2008100099100A Expired - Fee Related CN101246901B (zh) 2007-02-14 2008-02-13 半导体晶体管器件及其制造方法
CN2012104543756A Pending CN102938412A (zh) 2007-02-14 2008-02-13 半导体晶体管器件

Family Applications After (1)

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CN2012104543756A Pending CN102938412A (zh) 2007-02-14 2008-02-13 半导体晶体管器件

Country Status (5)

Country Link
US (1) US8058703B2 (enExample)
JP (1) JP5294192B2 (enExample)
KR (1) KR100847306B1 (enExample)
CN (2) CN101246901B (enExample)
DE (1) DE102008008867A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387106B (zh) * 2008-10-16 2013-02-21 Vanguard Int Semiconduct Corp 閘極絕緣雙接面電晶體（ｉｇｂｔ）靜電放電防護元件
TWI503893B (zh) * 2008-12-30 2015-10-11 Vanguard Int Semiconduct Corp 半導體結構及其製作方法
US8049307B2 (en) 2009-01-23 2011-11-01 Vanguard International Semiconductor Corporation Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices
CN101958344B (zh) * 2009-07-16 2012-03-07 中芯国际集成电路制造(上海)有限公司 绿色场效应晶体管及其制造方法
CN105097903B (zh) * 2009-11-09 2020-07-03 苏州博创集成电路设计有限公司 绝缘体上硅的横向n型绝缘栅双极晶体管
CN201708157U (zh) * 2010-06-30 2011-01-12 四川和芯微电子股份有限公司 结型场效应晶体管结构
US8735937B2 (en) 2012-05-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Fully isolated LIGBT and methods for forming the same
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
CN104882476B (zh) * 2015-05-25 2018-09-25 上海先进半导体制造股份有限公司 横向igbt及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258674B1 (en) * 1997-08-25 2001-07-10 Lg Semicon Co., Ltd. High voltage field effect transistor and method of fabricating the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132753A (en) * 1990-03-23 1992-07-21 Siliconix Incorporated Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
JPH08227999A (ja) * 1994-12-21 1996-09-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法
JP3222380B2 (ja) 1996-04-25 2001-10-29 シャープ株式会社 電界効果トランジスタ、および、ｃｍｏｓトランジスタ
JPH10242456A (ja) * 1997-02-28 1998-09-11 Toshiba Corp 横型絶縁ゲートバイポーラトランジスタ
US6117738A (en) * 1998-11-20 2000-09-12 United Microelectronics Corp. Method for fabricating a high-bias semiconductor device
JP2000332247A (ja) * 1999-03-15 2000-11-30 Toshiba Corp 半導体装置
US6191453B1 (en) 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
JP3831615B2 (ja) * 2001-01-16 2006-10-11 三洋電機株式会社 半導体装置とその製造方法
JP2002270844A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 半導体装置及びその製造方法
TW200602758A (en) 2004-03-03 2006-01-16 Kimoto Kk Light control film and backlight device using it

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258674B1 (en) * 1997-08-25 2001-07-10 Lg Semicon Co., Ltd. High voltage field effect transistor and method of fabricating the same

Also Published As

Publication number Publication date
US8058703B2 (en) 2011-11-15
JP2008199029A (ja) 2008-08-28
KR100847306B1 (ko) 2008-07-21
US20080191316A1 (en) 2008-08-14
CN101246901A (zh) 2008-08-20
DE102008008867A1 (de) 2008-08-21
JP5294192B2 (ja) 2013-09-18
CN102938412A (zh) 2013-02-20

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