CN101241900B - 半导体集成电路 - Google Patents

半导体集成电路 Download PDF

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Publication number
CN101241900B
CN101241900B CN2007101362315A CN200710136231A CN101241900B CN 101241900 B CN101241900 B CN 101241900B CN 2007101362315 A CN2007101362315 A CN 2007101362315A CN 200710136231 A CN200710136231 A CN 200710136231A CN 101241900 B CN101241900 B CN 101241900B
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CN
China
Prior art keywords
wiring
fuse
electrode pad
plug
layer
Prior art date
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Active
Application number
CN2007101362315A
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English (en)
Chinese (zh)
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CN101241900A (zh
Inventor
米津俊明
岩本猛
大林茂树
荒川政司
河野和史
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN101241900A publication Critical patent/CN101241900A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN2007101362315A 2006-08-11 2007-07-11 半导体集成电路 Active CN101241900B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP219370/2006 2006-08-11
JP2006219370 2006-08-11
JP030263/2007 2007-02-09
JP2007030263A JP5132162B2 (ja) 2006-08-11 2007-02-09 半導体集積回路

Publications (2)

Publication Number Publication Date
CN101241900A CN101241900A (zh) 2008-08-13
CN101241900B true CN101241900B (zh) 2012-10-31

Family

ID=39289087

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101362315A Active CN101241900B (zh) 2006-08-11 2007-07-11 半导体集成电路

Country Status (5)

Country Link
US (2) US20080237787A1 (enExample)
JP (1) JP5132162B2 (enExample)
KR (1) KR101360709B1 (enExample)
CN (1) CN101241900B (enExample)
TW (1) TWI418014B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100904827B1 (ko) * 2007-05-02 2009-06-25 동부일렉트로닉스 주식회사 퓨즈 테스트 장치
US8772156B2 (en) * 2008-05-09 2014-07-08 International Business Machines Corporation Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
US7956466B2 (en) * 2008-05-09 2011-06-07 International Business Machines Corporation Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
JP2010192647A (ja) * 2009-02-18 2010-09-02 Renesas Electronics Corp 半導体装置、及び半導体装置の製造方法
JP5632766B2 (ja) * 2011-02-07 2014-11-26 ローム株式会社 半導体装置
US8648592B2 (en) * 2011-09-13 2014-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device components and methods
KR102096614B1 (ko) * 2013-10-11 2020-04-03 삼성전자주식회사 반도체 장치의 이-퓨즈 구조체
JP2017045865A (ja) 2015-08-26 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP3635778A4 (en) 2017-05-25 2021-03-10 Orpyx Medical Technologies Inc. SOFT CIRCUIT BOX
JP7425566B2 (ja) * 2019-09-09 2024-01-31 日清紡マイクロデバイス株式会社 半導体装置およびそのトリミング方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577831A (zh) * 2003-06-26 2005-02-09 恩益禧电子股份有限公司 半导体器件
CN1581479A (zh) * 2003-08-07 2005-02-16 恩益禧电子股份有限公司 半导体器件
US6872648B2 (en) * 2002-09-19 2005-03-29 Infineon Technologies Ag Reduced splattering of unpassivated laser fuses
CN1768423A (zh) * 2003-03-31 2006-05-03 索尼株式会社 半导体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5863147A (ja) * 1981-10-09 1983-04-14 Toshiba Corp 半導体装置
JPS63160242A (ja) * 1986-12-23 1988-07-04 Nec Corp 半導体装置
US5780918A (en) * 1990-05-22 1998-07-14 Seiko Epson Corporation Semiconductor integrated circuit device having a programmable adjusting element in the form of a fuse mounted on a margin of the device and a method of manufacturing the same
US6222244B1 (en) * 1998-06-08 2001-04-24 International Business Machines Corporation Electrically blowable fuse with reduced cross-sectional area
US6486526B1 (en) * 1999-01-04 2002-11-26 International Business Machines Corporation Crack stop between neighboring fuses for protection from fuse blow damage
US6268638B1 (en) * 1999-02-26 2001-07-31 International Business Machines Corporation Metal wire fuse structure with cavity
US6295721B1 (en) * 1999-12-28 2001-10-02 Taiwan Semiconductor Manufacturing Company Metal fuse in copper dual damascene
JP2002050692A (ja) * 2000-08-01 2002-02-15 Nec Corp 半導体装置およびその製造方法
JP4284242B2 (ja) * 2004-06-29 2009-06-24 パナソニック株式会社 半導体装置およびその製造方法
JP2006073947A (ja) * 2004-09-06 2006-03-16 Renesas Technology Corp ヒューズ構造

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872648B2 (en) * 2002-09-19 2005-03-29 Infineon Technologies Ag Reduced splattering of unpassivated laser fuses
CN1768423A (zh) * 2003-03-31 2006-05-03 索尼株式会社 半导体装置
CN1577831A (zh) * 2003-06-26 2005-02-09 恩益禧电子股份有限公司 半导体器件
CN1581479A (zh) * 2003-08-07 2005-02-16 恩益禧电子股份有限公司 半导体器件

Also Published As

Publication number Publication date
US20080237787A1 (en) 2008-10-02
CN101241900A (zh) 2008-08-13
KR101360709B1 (ko) 2014-02-07
US20130049166A1 (en) 2013-02-28
TWI418014B (zh) 2013-12-01
JP5132162B2 (ja) 2013-01-30
JP2008066693A (ja) 2008-03-21
TW200814293A (en) 2008-03-16
KR20080014601A (ko) 2008-02-14
US8723291B2 (en) 2014-05-13

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Effective date: 20100913

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Patentee after: Renesas Electronics Corporation

Address before: Kanagawa

Patentee before: Renesas Electronics Corporation

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