CN101164150B - 将芯片转移到接触基底的装置和方法 - Google Patents

将芯片转移到接触基底的装置和方法 Download PDF

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CN101164150B
CN101164150B CN2006800111703A CN200680011170A CN101164150B CN 101164150 B CN101164150 B CN 101164150B CN 2006800111703 A CN2006800111703 A CN 2006800111703A CN 200680011170 A CN200680011170 A CN 200680011170A CN 101164150 B CN101164150 B CN 101164150B
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chip
substrate
contact
transfer
foil
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CN101164150A (zh
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E·扎克尔
G·阿特达斯特
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Pac Tech Packaging Technologies GmbH
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Abstract

本发明涉及一种将位于转移基底(26)上的芯片(18)转移到接触基底(50)上，以使芯片和接触基底对接的装置和方法。其中，芯片的背面(19)粘附在转移基底朝向接触基底的一个支撑面上，芯片自转移基底的后面加载激光能量。通过一个按压装置(45，46)自后面按压转移基底，和接触基底的接触面(58)相对设置的芯片触点(59，60)与设置于接触面上的基底触点(56，57)对接，芯片触点和基底触点之间形成热结合层。

Description

将芯片转移到接触基底的装置和方法
技术领域
本发明涉及一种将位于转移基底上的芯片转移到接触基底上，以在芯片和接触基底之间形成对接的方法。其中，芯片的背面贴附在转移基板朝向接触基底的一个支撑面上，激光能量自转移基底的后面加载在芯片上。通过一个按压装置，和接触基底的接触面相对设置的芯片触点与设置于接触面上的基底触点对接，芯片触点和基底触点之间形成一个热结合层。本发明还涉及一种实施前述方法的装置。
背景技术
位于基底上的芯片通常需要处理，以在实际对接操作之前使芯片与基底相互定位，使得芯片触点和基底触点的对应排列，保证芯片触点和基底触点的成功对接。芯片的处理需要复杂的设备，而且通常需要辅以其他的工艺步骤来对各个芯片进行定位，因此完成整个对接过程所需要的时间较长。
发明内容
本发明的目的在于：提供一种将芯片和基底对接的方法，其操作简单、操作时间短。
为了解决上述技术问题，本发明提供了一种权利要求1所述的方法和一种权利要求11所述的装置。
根据本发明的方法，芯片不是通过直接操作和基底对接，而是在转移基底上施加机械和热载荷，以使得后续对接工序所依赖的芯片排列取决于转移基底上的芯片排列，无需直接处理尺寸较小的芯片。
当实施根据本发明的方法时，转移基底最好是箔材。由于厚度很小，箔材可以形成一个和芯片预定排列对应的载体。此外，箔材具有很低的机械阻力和热阻，以使得通过施加很小的压力就可以实现对接所需要的传送运动，也可以迅速加热芯片以在芯片触点和基底触点之间形成热结合层。
通过将芯片粘附在转移基底的背面，在传送运动中，压力和热可以同时施加在芯片的背面，以在芯片触点和基底触点之间形成初始的机械接触，并同时溶解芯片和转移基底之间的粘性结合。在粘性结合溶解的同时，芯片的间接热载可加热芯片触点，并导致热量向基底触点传递，使得除了持久的机械和导电结合之外，芯片触点和基底触点之间还可以形成一个热结合。
为了将芯片粘附在成箔片设置的转移基底上，最好应用胶合剂，可以根据需要的脱离温度(即芯片从箔片上脱离的温度)准确选择粘结材料。
如果胶合剂采用的是用于箔材的胶膜，芯片可以非常简便地粘附在箔片上。
此外，也可以对芯片施加胶合剂，以将芯片粘合在转移基底上。
芯片和接触基底之间的粘合操作可以采用热固化，并在芯片触点和基底触点之间的粘结区域是导电的，以将芯片粘结在接触基底上。也即在芯片和接触基底之间同时形成机械和导电对接。例如，可采用各向异性的粘结剂，当在各向异性的粘结剂上施加压力时，导电粘结颗粒分布于压力峰值的区域。
此外，还可以通过设置于芯片触点和/或基底触点上的焊接材料将芯片粘结于接触基底上，形成焊接连接，以在芯片和接触基底之间形成机械和电连接。
还可以通过芯片触点和基底触点之间的焊接连接将芯片和接触基底连接，焊接连接主要是为了保证电连接，以底层填料方式在芯片和接触基底之间提供热固化的粘合操作。
当需要将置于同一箔片上的若干个芯片转移到一个或多个接触基底上，并和接触基底同时对接时，根据本发明的方法的优点特别显著。这样，通过一个简单的传送运动就可以实现芯片和接触基底之间的多个对接，因此，可以在很短的时间内生产多个含有一个芯片和一个接触基底的组件。这些组件包括异频雷达收发机，其包括一个设置于一个基底上的芯片，基底的基底触点形成天线装置的端部。
根据本发明的方法一个有益变更，可以通过将芯片从晶片材料上分离，芯片在箔片上成晶片排列。这样，自晶片分离后，芯片可以以相同的排列，即通过相应的晶片模型被转移到转移基底上。
为了使芯片可以非常方便地以晶片排列被转移到转移基底上，可以在划片分离晶片之前采用胶合操作，以使得划片后芯片可以以晶片排列整体被转移到转移基底上，无需分别处理分离的芯片。
作为上述晶片排列和转移基底1∶1转移的一种替换，还可以选择转移基底上芯片的排列和接触基底的排列相匹配，如接触基底上放置的几个芯片的排列和各自芯片的基底触点相对应。在此变更的方法中，一个接触基底的所有芯片可以在同一对接操作中一次对接。
根据本发明的装置具有权利要求11所述的特征，且特别适用于实施本发明的方法。根据本发明的装置包括一个转移工具，转移工具包括一个激光装置和一个按压装置，因此不仅可以形成可产生机械接触的传送运动，而且可以使用热载以在芯片和接触基底之间形成持久的机械连接和电连接。
在一个优选实施方式中，转移工具包括一个用于连接光纤维以传递激光能量的工件和一个设有激光转移装置的接触尖端，以实现前述两个功能，即传送和加载激光能量，且转移工具的结构紧凑。
接触尖端设置成压力毛细管有益于压力分散，当激光能量直接通过毛细管开口时，压力可以均匀地分布。
为了防止接触尖端和转移基底接触时出现压力峰值，工件和接触尖端之间最好可以设置一个压力传递件。压力传递件可以在一定的载荷下变形，压力传递件最好可以为弹性支撑。
如果一个转移头中设有多个转移工具，就可以转移和对接相应数量的芯片，以根据需要同时或按照一定次序进行转移和对接。
如果转移头中的转移工具成矩阵排列，那么该矩阵排列最好可以和芯片的晶片排列相匹配。
在另一个优选实施方式中，如果排列转移基底的装置包括一个维持装置，以将分离箔片设置为其上具有若干个呈晶片排列的芯片的转移基板，且排列转移基底的装置装有一个定位装置，以根据接触基底上的芯片排列对晶片排列中的各个芯片进行定位，则在对接中可以根据芯片的晶片排列来将芯片任意分布在接触基底上，无需考虑接触基底的设计或接触基底上的芯片分布。
转移基底的维持装置还可以设有一个可导引箔板转移基底的板材导引装置，且转移基底的维持装置设有一个可根据接触基底上芯片的排列对各个芯片进行定位的送料机构。这样，可以选择箔板转移基板上芯片的排列方式，以和接触基底上芯片的排列相匹配，且同时对接若干个芯片。
附图说明
下面结合附图，详细说明本发明的方法和实施本发明方法的装置的各个具体实施方式，其中：
图1A和图1B所示为本发明方法的原理示意图。
图2所示为本发明方法的一种变更，其中转移基底为划片箔片形式。
图3所示为本发明方法的另一种变更，其中转移基底为箔板形式。
图4所示为在芯片的转移区域直接实施本发明操作方法的放大示意图。
图5所示为若干个成行排列的转移工具。
图6所示为实施本发明方法的转移头的俯视示意图，其基于划片箔片的转移基底。
具体实施方式
请参照本发明一个实施方式的简化示意图，图1A和1B所示为一个转移工具10，其包括一个以光纤维11形式设置的激光装置。激光装置也可以充当按压装置12，光纤维11可在工件13上设置的一个通道14中受到导引。工件13的下前端面设置成一个接触基底定位装置15，箔片17可以通过真空开孔16维持在定位装置15上。箔片17上装有若干芯片18，芯片18通过其背面19与箔片17之间的胶合剂(未图示)粘附在箔片17上。
图1B所示为转移过程的示意图，转移工具10直接位于一个接触基底20的上方，其中，与光纤维11的自由接触端21相对的芯片18被按压在接触基底20上，以导通芯片18的接触面22和接触基底20的接触面23之间的接触空隙24。在本实施方式中，光纤维11也充当按压装置12，其可延伸抵压在芯片18的背面19上，以实现上述目的。
最好在上述转移运动的同时，或在芯片18的接触面22平齐抵接在接触基底20的接触面23上之前，通过箔片17在芯片18的背面19施加激光能量。箔片17透明，可允许激光能量穿过，因此芯片18可被加热。加热作用可减小芯片18的背面19与箔片17之间的粘结层的粘结力，并激活设置于接触面22与接触面23之间的热固性粘结材料的粘结力，以在芯片18与接触基底20之间形成持久的机械粘结，并同时释放箔片17与芯片18的背面19之间的粘结。
图2和图3所示为本发明方法的两种变更和实施两种变更方法对应的装置。其中，图2所示为本发明方法的一种变更，其基于一个由划片箔片成型并充当转移基底的分离箔片25，该方法通过一个第一转移装置87实施。图3所示为本发明方法的另一种变更，其基于一个充当转移基底的箔板26，该方法通过一个第二转移装置88实施。
为了简易，图2仅显示了一个转移工具，其从后面对分离箔片25加载。在分离箔片25的前侧28，若干个芯片18以所谓的晶片排列29分布，即芯片18的排列方式和自一个晶片通过分离工艺制造芯片18所得到的芯片排列方式完全对应。此时，一个沿外围延伸的载体框架31可以充当维持分离箔片25的装置，载体框架31按照预定的间隔设有若干真空开孔16，以使得分离箔片25可被维持在图2所示的位置。
置于接触基底维持装置34上的一个接触基底33，位于在分离箔片25上呈晶片排列29分布的芯片18的下方，接触基底33通过一个接触空隙32和芯片18相互分离。
与图2所示的设计不同，图3所示的转移装置88并未采用分离箔片25，而是采用了箔板26，箔板26可以通过一个板材导引装置36运行过一个箔板支承装置37。芯片18可以排列在箔板26上，以使得分离前晶片的整个表面上都可以应用胶合剂。分离后，呈晶片排列29设置的芯片18随后可以通过其背面19上的胶合剂被转移到箔板26上。为了传送箔板26，板材导引装置36设有一个箔板卸除卷轴38，一个箔板卷片卷轴39，以及两个分流滑轮40，41，分流滑轮40，41可使箔板26能够平行于箔板支承装置37被导引。箔板支承装置37设有多个真空开孔(未详细图示)，真空开孔可调节箔板26，以在箔板26与接触基底片材42之间形成一个预定的接触间隙35，接触基底片材42通过接触基底片材支承装置43向前运动。接触基底片材支承装置43上也设有若干个真空开孔16，真空开孔16可使得接触基底片材42以一定方式支承在接触基底片材支承装置43上。
箔板支承装置37上方设有一个转移头44，转移头44包括若干个转移工具45，46。转移工具45，46通过一个横梁51形成复合设置，转移工具45，46的壳体47以一定方式维持在横梁51中，以形成转移头44。转移工具45，46的各个工件47中分别设有一个线性导引传送件48，各线性导引传送件48分别延伸至箔板支承装置37上设置的传送槽49中。
在图3所示的转移装置88的转移示意图中，横梁51的传送运动使得传送工具45，46的线性导引传送件48插入传送槽49中，并将粘附在箔板26上的芯片18按压在置于接触基底片材42上(图4)的接触基底50(未详细图示)上。如图3中的双箭头所示，转移头44上的转移工具45，46在横梁51的载荷下可以同时执行传送运动。如图4的放大部分视图所示，如果箔板26和接触基底片材42分别定时沿着箔板支承装置37和接触基底片材支承装置43以相应的速度移动，则可以在芯片18与位于芯片18下、以接触间隙35和芯片18分隔的接触基底片材42上设置的接触基底50之间形成预定的重叠。
图4所示为转移工具45，46向置于接触基底片材42上的接触基底50执行传送运动的示意图，如箭头53所示，传送运动通过转移工具45，46的工件47引起。可在工件47中运动的线性导引传送件48通过工件47中的一个弹簧机构54组接在工件47上，因此，在和背面19通过胶膜55粘附在箔板26上的芯片18对接时，线性导引传送件48可以在避让运动中弹回，以避免损伤。在图4所示的实施方式中，设有两个基底触点56，57的接触基底50的接触面58上涂有一层各项异性粘合材料61，当芯片触点59，60和基底触点56，57对接时，粘合材料61中压力峰值区域处形成导电触桥。在和对接同时进行的芯片触点59，60的加热过程中，粘合材料61硬化，并永久固定前述的导电触桥。此时或在此之前，由芯片18的背面19与箔板26之间的胶膜55形成的粘结已经溶解，因此，当转移工具45，46沿箭头89方向回复运动之后，芯片18和接触基底50之间的对接仍然维持，箔板26和接触基底片材42可以向前移动，以进行后续的转移和对接操作。
图5所示为通过同一横梁68组合成行69排列的几个转移工具62至67，各个转移工具62至67的结构和功能与结合图3、图4所描述的转移工具45，46的结构和功能相同。
在图5所示的实施方式中，总共有6个转移工具62至67结合成行69排列，当然，也可以将不同数量的转移工具结合成行排列，还可以将转移工具的行排列和其他行排列相结合以形成一个如图6所示的矩阵75。在图5所示的实施方式中，调节机构76用于调节行69排列中各个转移工具62至67的相对位置，以使得转移工具62至67的纵轴对齐，转移工具62至67的高度调整统一，转移工具62至67的接触尖端92和参考平面F之间的间距一致。
和前述图2所示一样，图6所示实施方式中的分离箔片25为划片箔片，即分离箔片25和通过切割晶片用于制造若干个芯片的箔片相同。因此，在相关技术中，晶片被放置在一个箔片上---划片箔片，以进行分割处理。进行分割后，各个芯片在划片箔片上呈晶片排列。通过图6所示的转移装置91，划片箔片或分离箔片可用作实施本发明方法的转移基底。
如图6所示，转移头78用于同时转移呈晶片排列的若干个芯片，图6仅通过与成行69至74排列的转移工具相对应的各个光纤维11的示意图来表示转移头。
在背面设有晶片排列的芯片(图6未示)的分离箔片25的下方设有接触基底箔片79，接触基底箔片79上设有含若干个接触基底(未详细图示)的接触基底排列80，接触基底的基底触点的排列可以和呈晶片排列的芯片的触点相对应，也可以不和呈晶片排列的芯片的触点相对应。通过在进料方向77上移动接触基底箔片79，接触基底排列80可以通过适当的传送装置81，82以晶片排列移动。当基底触点的排列和芯片触点的排列相匹配时，和图4所示相类似，整个芯片的晶片排列可以在一次转移和对接中被转移到接触基底排列80的接触基底上。如果接触基底排列80中的基底触点的排列方式和晶片排列中的芯片触点的排列方式不匹配，芯片也可以单独或成批被转移和对接。此时，通过设有移动轴84和85的相应控制装置83，芯片可以被移动到对应接触基底的适当位置。控制装置83可以通过摄像器件86和图象处理装置来驱动。
和参照图4的描述一样，在图6所示的实施方式中，芯片和接触基底之间也可以设置热激活胶合剂，以实现芯片和接触基底之间的对接，此时，粘结材料中最好可以含有活性碳纤维，以提供良好的导电性。或者，也可以进行焊接对接，例如在芯片触点和/或接触基底触点上设置焊接材料。此外，还可以对芯片触点进行含有非电镀镍-金涂层的接触金属化。

Claims (16)

1.一种将位于转移基底(17，25，26)上的芯片(18)转移到接触基底(20，33，50)上，以在芯片和接触基底之间形成对接的方法，其特征在于：芯片的背面(19)粘附在转移基底朝向接触基底的一个支承面上，芯片自转移基底的后面加载激光能量，和接触基底的接触面(23，58)相对设置的芯片触点(59，60)通过一个按压装置(12，45，46，62至67)，自转移基底的后面与设置于接触面上的基底触点(56，57)对接，芯片触点和基底触点之间形成热结合层。
2.根据权利要求1所述的方法，其特征在于：所述转移基底为一个箔材(17，25，26)。
3.根据权利要求2所述的方法，其特征在于：为了将芯片(18)粘附在转移基底上，所述箔材(17，25，26)至少在与芯片的背面(19)对接的区域采用胶合剂(55)。
4.根据权利要求3所述的方法，其特征在于：所述箔材(17，25，26)设有一层胶膜。
5.根据权利要求1至4任一项所述的方法，其特征在于：所述芯片和接触基底之间的胶合材料(61)是为了将芯片(18)粘结在接触基底(20，33)上。
6.根据权利要求1至4任一项所述的方法，其特征在于：所述芯片触点(59，60)和/或基底触点(56，57)上设有焊接材料，以将芯片(18)粘结在接触基底(20，33)上。
7.根据权利要求1至6任一项所述的方法，其特征在于：设置于同一箔材(25，26)上的若干个芯片(18)被同时转移到接触基底(20，33)上，并与接触基底(20，33)对接。
8.根据权利要求7所述的方法，其特征在于：所述芯片(18)在箔材(25，26)上以自晶片材料上分离后形成的晶片排列(29)方式排列。
9.根据权利要求8所述的方法，其特征在于：在自晶片材料分离芯片(18)的过程中，所述箔材(25)上设有一个晶片。
10.根据权利要求7所述的方法，其特征在于：所述箔材(26)上的芯片转移时的排列方式和所述接触基底上芯片排列的方式相对应。
11.一种将位于转移基底(17，25，26)上的芯片(18)转移到接触基底(20，33，50)上，以在芯片和接触基底之间形成对接的装置，其包括一个可排列至少一个其上设有芯片的转移基底的装置(31，36，37)，一个设有一个激光装置(11)和一个按压装置(12，48)的转移工具(145，46，62至67)，以及一个可至少排列一个接触基底的装置(34，43)，其特征在于：所述激光装置和按压装置可使得背面(19)粘结在转移基底上的芯片可以自后面加压和加热，转移基底插入以将芯片转移到接触基底上，并使得芯片和接触基底对接；所述转移工具(45，46，62至67)设有一个连接光纤维(11)、以传输激光能量的工件(47)，以及一个装有激光转移装置的接触尖端(92)；所述工件(47)和所述接触尖端(92)之间设有一个弹性支承的力传递件(48)；一个转移头(78)设有若干个转移工具(62至67)，以转移和对接若干个芯片(18)。
12.根据权利要求11所述的装置，其特征在于：所述接触尖端(92)为一个压力毛细管。
13.根据权利要求11所述的装置，其特征在于：所述转移工具(62至67)在所述转移头(78)中呈矩阵(75)排列。
14.根据权利要求13所述的装置，其特征在于：所述转移工具(62至67)成一行或多行(69至74)排列。
15.根据权利要求11至14任一项所述的装置，其特征在于：所述排列转移基底的装置(31)设有一个维持装置，以将分离箔片(25)设置成一个其上具有若干个呈晶片排列(29)的芯片(18)的转移基底，且排列转移基底的装置(31)装有一个定位装置(83，86)，以根据接触基底上的芯片排列对晶片排列中的各个芯片进行定位。
16.根据权利要求11至14任一项所述的装置，其特征在于：所述转移基底的维持装置(36，37)设有一个可导引箔板(26)转移基底的板材导引装置，且所述转移基底的维持装置(36，37)设有一个可根据接触基底上芯片的排列对各个芯片(18)进行定位的送料机构(39)。
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