CN101162369A - 一种低蚀刻性光刻胶清洗剂及其清洗方法 - Google Patents

一种低蚀刻性光刻胶清洗剂及其清洗方法 Download PDF

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Publication number
CN101162369A
CN101162369A CNA2006101171385A CN200610117138A CN101162369A CN 101162369 A CN101162369 A CN 101162369A CN A2006101171385 A CNA2006101171385 A CN A2006101171385A CN 200610117138 A CN200610117138 A CN 200610117138A CN 101162369 A CN101162369 A CN 101162369A
Authority
CN
China
Prior art keywords
out system
low etching
etching property
ether
property photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101171385A
Other languages
English (en)
Chinese (zh)
Inventor
彭洪修
史永涛
刘兵
曾浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anji Microelectronics Shanghai Co Ltd
Anji Microelectronics Co Ltd
Original Assignee
Anji Microelectronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai Co Ltd filed Critical Anji Microelectronics Shanghai Co Ltd
Priority to CNA2006101171385A priority Critical patent/CN101162369A/zh
Priority to CNA2007800375301A priority patent/CN101523300A/zh
Priority to PCT/CN2007/002935 priority patent/WO2008046305A1/fr
Publication of CN101162369A publication Critical patent/CN101162369A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CNA2006101171385A 2006-10-13 2006-10-13 一种低蚀刻性光刻胶清洗剂及其清洗方法 Pending CN101162369A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CNA2006101171385A CN101162369A (zh) 2006-10-13 2006-10-13 一种低蚀刻性光刻胶清洗剂及其清洗方法
CNA2007800375301A CN101523300A (zh) 2006-10-13 2007-10-12 一种低蚀刻性光刻胶清洗剂及其清洗方法
PCT/CN2007/002935 WO2008046305A1 (fr) 2006-10-13 2007-10-12 Agent de nettoyage pour photoresist faiblement gravée et procédé de nettoyage correspondant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2006101171385A CN101162369A (zh) 2006-10-13 2006-10-13 一种低蚀刻性光刻胶清洗剂及其清洗方法

Publications (1)

Publication Number Publication Date
CN101162369A true CN101162369A (zh) 2008-04-16

Family

ID=39297305

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2006101171385A Pending CN101162369A (zh) 2006-10-13 2006-10-13 一种低蚀刻性光刻胶清洗剂及其清洗方法
CNA2007800375301A Pending CN101523300A (zh) 2006-10-13 2007-10-12 一种低蚀刻性光刻胶清洗剂及其清洗方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2007800375301A Pending CN101523300A (zh) 2006-10-13 2007-10-12 一种低蚀刻性光刻胶清洗剂及其清洗方法

Country Status (2)

Country Link
CN (2) CN101162369A (fr)
WO (1) WO2008046305A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102200700A (zh) * 2011-06-08 2011-09-28 绵阳艾萨斯电子材料有限公司 剥离液及其制备方法与应用
CN102449730A (zh) * 2009-05-25 2012-05-09 康斯坦茨大学 用于构形半导体基板的表面的方法和用于实施该方法的装置
CN102043356B (zh) * 2009-10-13 2012-09-26 奇美实业股份有限公司 清洗基板用洗净液组成物
CN103809393A (zh) * 2012-11-12 2014-05-21 安集微电子科技(上海)有限公司 一种去除光阻残留物的清洗液
CN104450280A (zh) * 2014-11-17 2015-03-25 如皋市大昌电子有限公司 一种二极管半导体专用清洗液
CN104928680A (zh) * 2014-03-20 2015-09-23 东友精细化工有限公司 结晶性硅片的纹理蚀刻液组合物和纹理蚀刻方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102102008B (zh) * 2009-12-18 2014-07-23 安集微电子（上海）有限公司 一种水基玻璃磨削液及其使用方法
CN118255779B (zh) * 2024-05-30 2024-08-16 浙江奥首材料科技有限公司 一种异山梨醇基强碱性季铵碱，及包含其的多晶硅蚀刻液、其制备方法及应用

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10239865A (ja) * 1997-02-24 1998-09-11 Jsr Corp ネガ型フォトレジスト用剥離液組成物
US5962197A (en) * 1998-03-27 1999-10-05 Analyze Inc. Alkaline organic photoresist stripper
US6319835B1 (en) * 2000-02-25 2001-11-20 Shipley Company, L.L.C. Stripping method
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102449730A (zh) * 2009-05-25 2012-05-09 康斯坦茨大学 用于构形半导体基板的表面的方法和用于实施该方法的装置
CN102043356B (zh) * 2009-10-13 2012-09-26 奇美实业股份有限公司 清洗基板用洗净液组成物
CN102200700A (zh) * 2011-06-08 2011-09-28 绵阳艾萨斯电子材料有限公司 剥离液及其制备方法与应用
CN102200700B (zh) * 2011-06-08 2012-08-22 绵阳艾萨斯电子材料有限公司 剥离液及其制备方法与应用
CN103809393A (zh) * 2012-11-12 2014-05-21 安集微电子科技(上海)有限公司 一种去除光阻残留物的清洗液
CN104928680A (zh) * 2014-03-20 2015-09-23 东友精细化工有限公司 结晶性硅片的纹理蚀刻液组合物和纹理蚀刻方法
CN104928680B (zh) * 2014-03-20 2018-05-04 东友精细化工有限公司 结晶性硅片的纹理蚀刻液组合物和纹理蚀刻方法
CN104450280A (zh) * 2014-11-17 2015-03-25 如皋市大昌电子有限公司 一种二极管半导体专用清洗液
CN104450280B (zh) * 2014-11-17 2017-06-06 如皋市大昌电子有限公司 一种二极管半导体专用清洗液

Also Published As

Publication number Publication date
WO2008046305A1 (fr) 2008-04-24
CN101523300A (zh) 2009-09-02

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20080416