CN101160663B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101160663B
CN101160663B CN2004800238654A CN200480023865A CN101160663B CN 101160663 B CN101160663 B CN 101160663B CN 2004800238654 A CN2004800238654 A CN 2004800238654A CN 200480023865 A CN200480023865 A CN 200480023865A CN 101160663 B CN101160663 B CN 101160663B
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CN
China
Prior art keywords
layer
electrode
semiconductor device
nitride
metal
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Expired - Fee Related
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CN2004800238654A
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English (en)
Chinese (zh)
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CN101160663A (zh
Inventor
安托尼·香西奥
马克·D·格里斯沃尔德
阿穆德哈·R·伊鲁达亚姆
珍妮弗·H·莫里松
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN101160663A publication Critical patent/CN101160663A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides

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  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2004800238654A 2003-09-23 2004-08-31 半导体器件 Expired - Fee Related CN101160663B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/668,694 US7078785B2 (en) 2003-09-23 2003-09-23 Semiconductor device and making thereof
US10/668,694 2003-09-23
PCT/US2004/028262 WO2005036597A2 (en) 2003-09-23 2004-08-31 Semiconductor device and making thereof

Publications (2)

Publication Number Publication Date
CN101160663A CN101160663A (zh) 2008-04-09
CN101160663B true CN101160663B (zh) 2010-10-27

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Application Number Title Priority Date Filing Date
CN2004800238654A Expired - Fee Related CN101160663B (zh) 2003-09-23 2004-08-31 半导体器件

Country Status (7)

Country Link
US (1) US7078785B2 (https=)
EP (1) EP1668673A2 (https=)
JP (1) JP2007515775A (https=)
KR (1) KR101054673B1 (https=)
CN (1) CN101160663B (https=)
TW (1) TWI349367B (https=)
WO (1) WO2005036597A2 (https=)

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Also Published As

Publication number Publication date
CN101160663A (zh) 2008-04-09
KR101054673B1 (ko) 2011-08-08
US7078785B2 (en) 2006-07-18
TWI349367B (en) 2011-09-21
WO2005036597A3 (en) 2007-12-06
WO2005036597A2 (en) 2005-04-21
TW200518338A (en) 2005-06-01
JP2007515775A (ja) 2007-06-14
US20050062130A1 (en) 2005-03-24
EP1668673A2 (en) 2006-06-14
KR20070017953A (ko) 2007-02-13

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