CN101147264B - 测试电路、晶圆、测量装置、元件制造方法以及显示装置 - Google Patents
测试电路、晶圆、测量装置、元件制造方法以及显示装置 Download PDFInfo
- Publication number
- CN101147264B CN101147264B CN2005800491869A CN200580049186A CN101147264B CN 101147264 B CN101147264 B CN 101147264B CN 2005800491869 A CN2005800491869 A CN 2005800491869A CN 200580049186 A CN200580049186 A CN 200580049186A CN 101147264 B CN101147264 B CN 101147264B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- measured
- transistor
- voltage
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
- G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/012359 WO2007004289A1 (ja) | 2005-07-04 | 2005-07-04 | テスト用回路、ウェハ、測定装置、デバイス製造方法、及び表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101147264A CN101147264A (zh) | 2008-03-19 |
CN101147264B true CN101147264B (zh) | 2012-06-20 |
Family
ID=37604169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800491869A Expired - Fee Related CN101147264B (zh) | 2005-07-04 | 2005-07-04 | 测试电路、晶圆、测量装置、元件制造方法以及显示装置 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7863925B2 (ja) |
EP (2) | EP1901356A4 (ja) |
JP (1) | JP3972076B2 (ja) |
KR (1) | KR100991408B1 (ja) |
CN (1) | CN101147264B (ja) |
TW (1) | TWI459004B (ja) |
WO (1) | WO2007004289A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106935570A (zh) * | 2017-03-31 | 2017-07-07 | 京东方科技集团股份有限公司 | 测试电路、测试方法、阵列基板及其制造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007004289A1 (ja) * | 2005-07-04 | 2007-01-11 | National University Corporation Tohoku University | テスト用回路、ウェハ、測定装置、デバイス製造方法、及び表示装置 |
DE102008015211B4 (de) * | 2008-03-20 | 2011-01-05 | Infineon Technologies Ag | Messanordnung und Verfahren zum Betreiben der Messanordnung |
WO2009147721A1 (ja) | 2008-06-02 | 2009-12-10 | 株式会社アドバンテスト | 試験用ウエハユニット、および、試験システム |
JP5433187B2 (ja) * | 2008-08-28 | 2014-03-05 | ピーエスフォー ルクスコ エスエイアールエル | 半導体記憶装置及びそのテスト方法 |
US8169844B2 (en) * | 2009-06-30 | 2012-05-01 | Agere Systems Inc. | Memory built-in self-characterization |
CN103033728B (zh) * | 2011-10-08 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | 经时击穿矩阵测试电路及测试方法 |
CN103134438A (zh) * | 2011-12-02 | 2013-06-05 | 宁波中嘉科贸有限公司 | 复合式量测治具 |
CN103197222B (zh) * | 2013-03-22 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | 晶体管漏电流的测试方法 |
CN106124832B (zh) * | 2016-08-08 | 2019-04-30 | 武汉新芯集成电路制造有限公司 | 一种元器件饱和电流的量测方法和量测系统 |
KR102413192B1 (ko) * | 2017-11-03 | 2022-06-24 | 삼성전자주식회사 | Nbti 또는 pbit를 모니터링하는 테스트 회로 |
US11073551B2 (en) * | 2018-08-16 | 2021-07-27 | Taiwan Semiconductor Manufacturing Company Ltd. | Method and system for wafer-level testing |
CN109541427B (zh) * | 2018-12-05 | 2021-04-13 | 上海华力微电子有限公司 | 晶体管电性测试结构及测试方法 |
US11217684B2 (en) * | 2019-05-19 | 2022-01-04 | Mikro Mesa Technology Co., Ltd. | Method for rapidly gathering sub-threshold swing from thin film transistor |
US11237205B2 (en) * | 2020-05-06 | 2022-02-01 | Nanya Technology Corporation | Test array structure, wafer structure and wafer testing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5149993A (en) * | 1989-10-13 | 1992-09-22 | Fujitsu Limited | Circuit arrangement of semiconductor integrated circuit device |
CN1611954A (zh) * | 2003-10-31 | 2005-05-04 | 浩威科技有限公司 | 薄膜晶体管显示器数组的测试电路及方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990016069A1 (en) * | 1989-06-12 | 1990-12-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JPH0770620B2 (ja) * | 1990-12-26 | 1995-07-31 | 株式会社東芝 | 半導体記憶装置 |
US5666080A (en) * | 1993-06-17 | 1997-09-09 | Yozan, Inc. | Computational circuit |
JP3265129B2 (ja) | 1994-08-10 | 2002-03-11 | 株式会社東芝 | 不揮発性半導体記憶装置のセル特性測定回路 |
JPH10223707A (ja) | 1997-02-10 | 1998-08-21 | Ricoh Co Ltd | ウエハテスト方法及び装置 |
US6348806B1 (en) * | 1999-03-18 | 2002-02-19 | Motorola, Inc. | Method and apparatus for measuring gate leakage current in an integrated circuit |
DE10028145C2 (de) * | 2000-06-07 | 2002-04-18 | Infineon Technologies Ag | Integrierte Schaltungsanordnung zum Testen von Transistoren und Halbleiterscheibe mit einer solchen Schaltungsanordnung |
JP3707404B2 (ja) * | 2001-08-03 | 2005-10-19 | ソニー株式会社 | 検査方法、半導体装置、及び表示装置 |
KR100395880B1 (ko) * | 2001-09-11 | 2003-08-25 | 삼성전자주식회사 | 테스트 소자 그룹 구조 |
US7019545B2 (en) * | 2002-10-17 | 2006-03-28 | United Microelectronics Corp. | Method for monitoring quality of an insulation layer |
JP4378087B2 (ja) * | 2003-02-19 | 2009-12-02 | 奇美電子股▲ふん▼有限公司 | 画像表示装置 |
KR100502912B1 (ko) * | 2003-04-01 | 2005-07-21 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 표시 패널과 구동 방법 |
KR100497246B1 (ko) * | 2003-04-01 | 2005-06-23 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 표시 패널과 구동 방법 |
US6897674B2 (en) * | 2003-06-30 | 2005-05-24 | International Business Machines Corporation | Adaptive integrated circuit based on transistor current measurements |
WO2007004289A1 (ja) * | 2005-07-04 | 2007-01-11 | National University Corporation Tohoku University | テスト用回路、ウェハ、測定装置、デバイス製造方法、及び表示装置 |
EP1933215A4 (en) * | 2005-09-13 | 2011-04-06 | Advantest Corp | PRODUCTION SYSTEM, MANUFACTURING PROCESS, ADMINISTRATIVE APPROACH, ADMINISTRATIVE PROCEDURE AND PROGRAM |
EP1947539A4 (en) * | 2005-09-27 | 2011-05-18 | Advantest Corp | CONTROL METHOD, AND CONTROL SYSTEM |
KR100833753B1 (ko) * | 2006-12-21 | 2008-05-30 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 구동방법 |
JP4483884B2 (ja) * | 2007-03-28 | 2010-06-16 | セイコーエプソン株式会社 | 駆動信号生成装置、液体吐出装置、及び、駆動信号生成方法 |
-
2005
- 2005-07-04 WO PCT/JP2005/012359 patent/WO2007004289A1/ja not_active Application Discontinuation
- 2005-07-04 EP EP05755708A patent/EP1901356A4/en not_active Withdrawn
- 2005-07-04 CN CN2005800491869A patent/CN101147264B/zh not_active Expired - Fee Related
- 2005-07-04 JP JP2006521030A patent/JP3972076B2/ja active Active
- 2005-07-04 EP EP13170404.1A patent/EP2660867A3/en not_active Withdrawn
- 2005-07-04 KR KR1020077021630A patent/KR100991408B1/ko active IP Right Grant
-
2006
- 2006-07-04 TW TW095124262A patent/TWI459004B/zh not_active IP Right Cessation
-
2007
- 2007-09-19 US US11/857,444 patent/US7863925B2/en not_active Expired - Fee Related
-
2010
- 2010-10-07 US US12/899,557 patent/US7965097B2/en not_active Expired - Fee Related
-
2011
- 2011-05-05 US US13/102,042 patent/US20110209567A1/en not_active Abandoned
- 2011-05-05 US US13/102,046 patent/US20110212552A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5149993A (en) * | 1989-10-13 | 1992-09-22 | Fujitsu Limited | Circuit arrangement of semiconductor integrated circuit device |
CN1611954A (zh) * | 2003-10-31 | 2005-05-04 | 浩威科技有限公司 | 薄膜晶体管显示器数组的测试电路及方法 |
Non-Patent Citations (2)
Title |
---|
JP昭57-100690A 1982.06.22 |
JP特开平10-223707A 1998.08.21 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106935570A (zh) * | 2017-03-31 | 2017-07-07 | 京东方科技集团股份有限公司 | 测试电路、测试方法、阵列基板及其制造方法 |
CN106935570B (zh) * | 2017-03-31 | 2019-04-26 | 京东方科技集团股份有限公司 | 测试电路、测试方法、阵列基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110018577A1 (en) | 2011-01-27 |
TWI459004B (zh) | 2014-11-01 |
KR100991408B1 (ko) | 2010-11-03 |
TW200706892A (en) | 2007-02-16 |
WO2007004289A1 (ja) | 2007-01-11 |
US20080224725A1 (en) | 2008-09-18 |
US20110209567A1 (en) | 2011-09-01 |
EP1901356A1 (en) | 2008-03-19 |
KR20070120964A (ko) | 2007-12-26 |
US20110212552A1 (en) | 2011-09-01 |
JPWO2007004289A1 (ja) | 2009-01-22 |
EP1901356A4 (en) | 2012-03-07 |
EP2660867A3 (en) | 2014-02-12 |
CN101147264A (zh) | 2008-03-19 |
EP2660867A2 (en) | 2013-11-06 |
US7863925B2 (en) | 2011-01-04 |
JP3972076B2 (ja) | 2007-09-05 |
US7965097B2 (en) | 2011-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101147264B (zh) | 测试电路、晶圆、测量装置、元件制造方法以及显示装置 | |
CN101238566B (zh) | 器件识别方法、器件制造方法以及电子器件 | |
US8847619B2 (en) | Apparatus and methods for through substrate via test | |
US7099808B2 (en) | Capacitance and transmission line measurements for an integrated circuit | |
US7848828B2 (en) | Method and apparatus for managing manufacturing equipment, method for manufacturing device thereby | |
US5212454A (en) | Method and apparatus for selecting and measuring a capacitance from a plurality of interconnected capacitances | |
US6404219B1 (en) | Burn-in test method for a semiconductor chip and burn-in test apparatus therefor | |
JP4813440B2 (ja) | 電子デバイス及び解析方法 | |
US6831474B2 (en) | Apparatus and method for testing a plurality of electrical components that are coupled to one another | |
JP4776598B2 (ja) | 管理方法、管理装置、及びデバイス製造方法 | |
JP2007278798A (ja) | 半導体装置及びその評価方法 | |
JPH09320299A (ja) | 消去書込ストレスにより劣化したeepromのスクリーニング方法 | |
JP2006118910A (ja) | トランジスタの評価装置及びそれを用いたトランジスタの評価方法 | |
JP2005055231A (ja) | Mosトランジスタのオン抵抗検査方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120620 Termination date: 20170704 |
|
CF01 | Termination of patent right due to non-payment of annual fee |