CN101083228A - 半导体装置制造方法及半导体装置 - Google Patents
半导体装置制造方法及半导体装置 Download PDFInfo
- Publication number
- CN101083228A CN101083228A CNA2007101064443A CN200710106444A CN101083228A CN 101083228 A CN101083228 A CN 101083228A CN A2007101064443 A CNA2007101064443 A CN A2007101064443A CN 200710106444 A CN200710106444 A CN 200710106444A CN 101083228 A CN101083228 A CN 101083228A
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- semiconductor substrate
- electrode
- resistor
- film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000009413 insulation Methods 0.000 claims abstract description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 36
- 150000002500 ions Chemical class 0.000 description 18
- 238000010586 diagram Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000007514 turning Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000010339 dilation Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-148448 | 2006-05-29 | ||
JP2006148448A JP4863770B2 (ja) | 2006-05-29 | 2006-05-29 | 半導体装置の製造方法および半導体装置 |
JP2006148448 | 2006-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101083228A true CN101083228A (zh) | 2007-12-05 |
CN101083228B CN101083228B (zh) | 2012-06-20 |
Family
ID=38748753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101064443A Expired - Fee Related CN101083228B (zh) | 2006-05-29 | 2007-05-29 | 半导体装置制造方法及半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7790555B2 (zh) |
JP (1) | JP4863770B2 (zh) |
KR (1) | KR101437683B1 (zh) |
CN (1) | CN101083228B (zh) |
TW (1) | TWI423304B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090067595A (ko) * | 2007-12-21 | 2009-06-25 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
US7785979B2 (en) * | 2008-07-15 | 2010-08-31 | International Business Machines Corporation | Integrated circuits comprising resistors having different sheet resistances and methods of fabricating the same |
JP5524662B2 (ja) * | 2010-03-17 | 2014-06-18 | 旭化成エレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2016134544A (ja) * | 2015-01-21 | 2016-07-25 | キヤノン株式会社 | 半導体装置の製造方法 |
US11664436B2 (en) * | 2021-03-01 | 2023-05-30 | Wolfspeed, Inc. | Semiconductor devices having gate resistors with low variation in resistance values |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60246660A (ja) * | 1984-05-22 | 1985-12-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH07263434A (ja) * | 1994-03-22 | 1995-10-13 | Nippon Steel Corp | 素子分離領域の形成方法 |
JPH10303098A (ja) | 1997-04-24 | 1998-11-13 | Matsushita Electric Works Ltd | 半導体装置の製造方法 |
JPH1187335A (ja) * | 1997-09-04 | 1999-03-30 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP3349423B2 (ja) * | 1998-02-12 | 2002-11-25 | 三洋電機株式会社 | 半導体集積回路 |
JP2000131824A (ja) * | 1998-10-28 | 2000-05-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2004200372A (ja) * | 2002-12-18 | 2004-07-15 | Renesas Technology Corp | 半導体装置 |
JP2007258295A (ja) * | 2006-03-22 | 2007-10-04 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法 |
-
2006
- 2006-05-29 JP JP2006148448A patent/JP4863770B2/ja not_active Expired - Fee Related
-
2007
- 2007-05-21 US US11/805,195 patent/US7790555B2/en not_active Expired - Fee Related
- 2007-05-28 TW TW096118988A patent/TWI423304B/zh not_active IP Right Cessation
- 2007-05-29 KR KR1020070051913A patent/KR101437683B1/ko active IP Right Grant
- 2007-05-29 CN CN2007101064443A patent/CN101083228B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101437683B1 (ko) | 2014-09-03 |
JP4863770B2 (ja) | 2012-01-25 |
US7790555B2 (en) | 2010-09-07 |
US20070272984A1 (en) | 2007-11-29 |
TWI423304B (zh) | 2014-01-11 |
KR20070114661A (ko) | 2007-12-04 |
JP2007318019A (ja) | 2007-12-06 |
TW200816270A (en) | 2008-04-01 |
CN101083228B (zh) | 2012-06-20 |
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160323 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
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CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120620 |
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CF01 | Termination of patent right due to non-payment of annual fee |