CN101075622B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101075622B
CN101075622B CN2007101092706A CN200710109270A CN101075622B CN 101075622 B CN101075622 B CN 101075622B CN 2007101092706 A CN2007101092706 A CN 2007101092706A CN 200710109270 A CN200710109270 A CN 200710109270A CN 101075622 B CN101075622 B CN 101075622B
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CN
China
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region
channel tft
gettering
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concentration
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Expired - Fee Related
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CN2007101092706A
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English (en)
Chinese (zh)
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CN101075622A (zh
Inventor
仲泽美佐子
牧田直树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Publication of CN101075622A publication Critical patent/CN101075622A/zh
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Publication of CN101075622B publication Critical patent/CN101075622B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
CN2007101092706A 2002-02-21 2003-02-21 半导体器件 Expired - Fee Related CN101075622B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP45239/2002 2002-02-21
JP2002045239A JP3961310B2 (ja) 2002-02-21 2002-02-21 半導体装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB03105465XA Division CN1329991C (zh) 2002-02-21 2003-02-21 半导体器件及其制造方法

Publications (2)

Publication Number Publication Date
CN101075622A CN101075622A (zh) 2007-11-21
CN101075622B true CN101075622B (zh) 2010-09-29

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Family Applications (2)

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CN2007101092706A Expired - Fee Related CN101075622B (zh) 2002-02-21 2003-02-21 半导体器件
CNB03105465XA Expired - Fee Related CN1329991C (zh) 2002-02-21 2003-02-21 半导体器件及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB03105465XA Expired - Fee Related CN1329991C (zh) 2002-02-21 2003-02-21 半导体器件及其制造方法

Country Status (5)

Country Link
US (2) US7332385B2 (enExample)
JP (1) JP3961310B2 (enExample)
KR (1) KR101017225B1 (enExample)
CN (2) CN101075622B (enExample)
TW (1) TWI305958B (enExample)

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JP4115158B2 (ja) * 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
JP4115283B2 (ja) * 2003-01-07 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
KR100542986B1 (ko) 2003-04-29 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치
KR100543004B1 (ko) 2003-09-18 2006-01-20 삼성에스디아이 주식회사 평판표시장치
JP4722391B2 (ja) * 2003-12-04 2011-07-13 株式会社半導体エネルギー研究所 薄膜トランジスタの製造方法
US7867791B2 (en) * 2005-07-29 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities
KR100741976B1 (ko) 2005-08-25 2007-07-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
EP1793366A3 (en) 2005-12-02 2009-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI603307B (zh) * 2006-04-05 2017-10-21 半導體能源研究所股份有限公司 半導體裝置，顯示裝置，和電子裝置
KR100770269B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
KR100878284B1 (ko) * 2007-03-09 2009-01-12 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치
KR100848341B1 (ko) 2007-06-13 2008-07-25 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置

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同上.

Also Published As

Publication number Publication date
CN1329991C (zh) 2007-08-01
US7821008B2 (en) 2010-10-26
US20070241404A1 (en) 2007-10-18
US7332385B2 (en) 2008-02-19
US20030173566A1 (en) 2003-09-18
JP3961310B2 (ja) 2007-08-22
KR101017225B1 (ko) 2011-02-25
CN1445853A (zh) 2003-10-01
TW200305288A (en) 2003-10-16
TWI305958B (en) 2009-02-01
KR20030069852A (ko) 2003-08-27
CN101075622A (zh) 2007-11-21
JP2003243417A (ja) 2003-08-29

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