CN101055776B - 导电的厚膜组合物、电极和所形成的半导体设备 - Google Patents

导电的厚膜组合物、电极和所形成的半导体设备 Download PDF

Info

Publication number
CN101055776B
CN101055776B CN200610074808XA CN200610074808A CN101055776B CN 101055776 B CN101055776 B CN 101055776B CN 200610074808X A CN200610074808X A CN 200610074808XA CN 200610074808 A CN200610074808 A CN 200610074808A CN 101055776 B CN101055776 B CN 101055776B
Authority
CN
China
Prior art keywords
composition
paste
electrode
frit
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200610074808XA
Other languages
English (en)
Other versions
CN101055776A (zh
Inventor
Y·L·王
K·W·汉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sun Paster Co ltd
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36688102&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN101055776(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN101055776A publication Critical patent/CN101055776A/zh
Application granted granted Critical
Publication of CN101055776B publication Critical patent/CN101055776B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064Glass compositions containing silica with less than 40% silica by weight containing boron
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00Nature of the non-vitreous component
    • C03C2214/08Metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00Nature of the non-vitreous component
    • C03C2214/16Microcrystallites, e.g. of optically or electrically active material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本发明涉及一种导电厚膜组合物,包括:(a)导电金属粒子,选自(1)Al、Cu、Au、Ag、Pd和Pt;(2)Al、Cu、Au、Ag、Pd和Pt的合金;和(3)它们的混合物,(3)玻璃料,其中玻璃料不含铅;分散于(d)有机介质中,其中所述导电金属粒子的平均粒径在0.5-10.0微米范围内。本发明还涉及一种上述组合物形成的电极和包含所述电极的一种或多种半导体设备(如太阳能电池)。

Description

导电的厚膜组合物、电极和所形成的半导体设备
技术领域
本发明主要涉及一种厚膜组合物、电极和半导体设备。它还涉及一种硅半导体设备。具体地,它属于一种用于形成太阳能电池的厚膜电极的导电组合物。本发明还涉及一种用于太阳能电池的银的导电的厚膜组合物(糊)。
背景技术
本发明可广泛用于各类半导体设备,尽管它特别适用于光接收组件,例如光电二级管和太阳能电池。以下引用太阳能电池作为现有技术的具体例子,对本发明的背景进行具体描述。
常规的p-型基的太阳能电池结构具有负电极,它一般位于电池的正面或朝太阳面,以及位于背面的正电极。目前已知,波长合适的、落入半导体主体的p-n连接的辐射作为一种外能量源,以在该主体中产生孔-电子对。由于p-n连接处存在潜在差异,孔和电子以相反反向移经该连接,从而引起电流流动,能传递能量给外电路。多数太阳能电池是金属化的硅晶片的形式,即提供其具导电性的金属触点。
目前已有的多数产生电能的太阳能电池为硅太阳能电池。大规模生产的工艺流程一般旨在尽可能简化并最小化生产成本。特别是使用如丝网印刷的方法,自金属糊制造电极。
该生产方法的例子结合图1具体描述如下。
图1示p-型硅基材10。
在图1(b)中,n-型扩散层20,具反向的导电类型,通过磷(P)或类似物的热扩散形成。三氯氧化磷(POCl3)常用于磷扩散源。在不进行任何更改的情况下,扩散层20形成于整个硅基材10的表面。扩散层的表面电阻率为几十个欧姆每平方(W/o),厚度约0.3至0.5μm。
当用保护层或类似物保护扩散层的正面之后,如图1(c)所示,通过蚀刻将扩散层20从其余表面除去,从而保护层仅留下正面。然后用有机溶剂或类似物将保护层除去。
然后,在n-型扩散层20上形成减反射涂层氮化硅膜30,厚度约700-900
Figure 10003_0
,如图1(d)所示,使用如等离子体化学气相沉淀(CVD)等方法。
如图1(e)所示,用于正面电极的银糊500经丝网印刷干燥于氮化硅膜30上。此外,一背面银或银/铝糊70以及铝糊60经丝网印刷依次干燥于基材背面。然后,在红外线炉中,约700-950℃下,用一般方法进行烧制几分钟至几十分钟的时间。
然后,如图1(f)所示,铝从铝糊扩散至硅基材10,在烧制时作为掺和剂,形成p+层40,包含高浓度的铝掺和剂。该层一般称为背称面区域(BSF)层,并有助于提高太阳能电池的能转化效率。
铝糊通过烧制,从干燥状态60变为铝背电极61。背面的银或银/铝糊70在同时进行烧制,形成银或银/铝背电极71。烧制时,背面铝和背面银或银/铝间的边界设定为合金状态,并作电学连接。铝电极占背电极的大部分区域,部分地由于需要形成p+层40。由于不可能对铝电极进行焊接,银或银/铝背面电极通过铜带或类似物的方式,作为互连太阳能电池的电极,形成于背面(一般为5-6mm宽的母线)部分。此外,正面成电极银糊500,在烧制时,烧结并透过氮化硅膜30,从而能电连接n-型层20。这类工艺一般称为“烧透(firing through)”。该烧透状态在图1(f)的层501上很明显。
如上所述,使用在焊接过程中来互连太阳能电池的背面电极可包括银或银/铝组合物。当使用现有技术中的银组合物时,它们可提供较好的焊接力和粘附力。然而,由于银组合物不能产生背称面区域,太阳能电池的转化效率不佳。另外,当使用银/铝组合物时,粘附强度通常会降低,并影响长期的可靠性。这是由于加入铝一般会伤害焊接能力,并影响粘附。
此外,人们目前正在努力提供一种组合物,它们不含铅,同时保持设备的电学性能及其它相关特征。本发明发明者提供新型含银/铝组合物及能提供如无铅系统等的同时保持电学性质并提高粘附力的半导体设备。本发明提供这样的组合物和设备。此外,本发明的组合物在本发明某些实施例中可提供低的弯度。
发明简述
本发明涉及一种导电厚膜组合物,包括:
(a)导电金属粒子选自(1)Al、Cu、Au、Ag、Pd和Pt;(2)Al、Cu、Au、Ag、Pd和Pt的合金;和(3)混合物;
(b)玻璃料,其中所示玻璃料无铅;分散于
(c)一种有机介质,且其中所述导电金属粒子的平均粒径在0.5-10.0微米范围内。本发明还涉及由所述组合物形成的电极,如上的详述,以及涉及包含所述电极的半导体装置。
附图说明
图1为过程流程图,显示半导体装置的制造。图1中所示的编号解释如下。
10:p-型硅基材
20:n-型扩散层
30:氮化硅膜、氧化钛膜或氧化硅膜
40:p+层(背面区域,BSF)
60:形成于背面的铝糊
61:铝背面电极(通过燃烧背面铝糊获得)
70:形成于背面的银/铝糊
71:银/铝背面电极(通过燃烧背面的银/铝糊获得)
500:形成于正面的银糊
501:银正面电极(通过燃烧背面银糊形成)
图2(a)-(d)解释使用本发明的导电性糊体制造太阳能电池的制造过程。图2中所示的编号解释如下。
102      硅基材
104      光接收面侧电极
106      用于第一电极的糊组合物
108      用于第二电极的导电糊
110      第一电极
112      第二电极
发明详述
本发明的导电的厚膜组合物(糊)提供由所述糊形成电极的能力,其中该电极具有对硅基材的高粘附度、高背面区域和低弯度。
为了达到上述目的,本发明为一种导电厚膜组合物,尤其是银/铝导电糊,所述糊包括银和铝粒子、玻璃粒子、任选的无机添加剂和有机载体,并应用于这样的电池:它连接太阳能电池硅基材上的背面端。该情形的特征是,所述银/铝粒子的平均粒径为0.5-10.0微米。本发明中,优选包括以糊总重量计40-93wt%的银粒子、以糊总重量计1-5wt%的铝、以糊总重量计2-0wt%的玻璃粒子、为以糊总重量计0-2wt%的无机添加剂,以及以糊总重量计5-50wt%的有机载体。此外,优选在银导电糊中包括玻璃粉末,从而获得300-550℃的软化温度。
本发明的导电糊可直接接触硅基材使用或印刷于Al膜顶部使用。
本发明的导电厚膜糊的每种组分详细解释如下。
1.导电金属
本发明中,导电相最优选银(Ag)/铝(Al);然而,除了银/铝外的导电金属,也可使用如Cu、Au、Ag、Pd、Pt、Al、Ag-Pd、Pt-Au等。事实上,导电金属粒子可选自(1)Al、Cu、Au、Ag、Pd和Pt;(2)Al、Cu、Au、Ag、Pd和Pt的合金;以及(3)它们的混合物。
一般地,本发明的导电糊内可用的导电金属,银(Ag)和铝(Al)将用作本发明组合物的导电相。银和铝粒子优选为片状或球状(有时称作粉末)形式。使用银以有助于高导电度和可焊接能力;使用铝以有助于其诱导背面区域的能力,从而转变效能。
优选银和铝具有高纯度(99+%);尽管如此,具有低纯度的物质也可用于响应电极模式的电需求。
2.无机粘合剂
优选本发明的导电糊包括无机粘合剂。本发明中可用的无机粘合剂为具有优选软化温度在300-550℃的玻璃料,从而使导电糊可在700-950℃下进行烧制,适当地进行烧结并湿润,并适当地粘附至硅基材。若软化温度低于300℃,玻璃可能过早熔化并移至电极表面,干扰焊接。另一方面,若软化温度高于550℃,玻璃将没有足够时间烧结软化并湿润导电相,且不能产生足够的粘附强度,且有时候并不能促进银的液相烧结。可理解,若加工中使用的烧制温度范围变化了,则最佳玻璃料的软化点温度范围也会变化。
此处,“软化温度”通过ASTM C338-57的纤维伸长法获得。本发明中玻璃化学成份,不仅对粘附强度、还对弧状弯曲和电性能有作用。此外,本发明限于无铅玻璃。本发明中有用的玻璃包括铋基玻璃。一些典型的玻璃组合物包括下列物质(以总玻璃组合物的重量百分数计):SiO2:0.5-35%;Al2O3:0-5%;B2O3:1-15%;ZnO:0-15%;Bi2O3:55-90%。所选的玻璃组合物列入表1。
并不对玻璃料作为无机粘合剂的含量作具体限制,只要它的含量足以达到本发明的发明目的;尽管如此,该含量一般为,以导电糊总重量计,1-10wt%,优选2-6wt%。
如果无机粘合剂的量小于1wt%,则有时粘附强度会不足,电性能会受影响,而如果无机粘合剂的量高于10wt%,焊接可能变得十分难。此外,当玻璃含量的百分比增加时,也可不利地影响弯度。
3.任选的无机添加剂
本发明组合物中使用的玻璃料(无机粘合剂)提供粘附,然而,可加入总导电组合物的无机玻璃结合剂的总量受弯度和焊接力条件的限制。因此附加的无机添加剂可任选地加入,从而提高增加性能。这些附加任选添加剂可选自(1)TiB2、Cu、Ti、Al、Sn、Sb、Cr、Fe、Mn、Co、Ni、Ru、B和Bi;(2)可生成选自Cu、Ti、Al、Sn、Sb、Cr、Fe、Mn、Co、Ni、Ru、B和Bi等金属元素的化合物;(3)Cu、Ti、Al、Sn、Sb、Cr、Fe、Mn、Co、Ni、Ru、B和Bi的氧化物;以及(4)它们的组合物。
本发明发明者发现,少量的任选添加剂,如铜粉或金属氧化物,Bi2O3、TiO2、TiB2、Al2O3、B2O3、SnO2、Sb2O5、Cr2O3、Fe2O3、CuO、Cu2O、MnO2、Co2O3、NiO、RuO2等,可帮助提高粘附特性,同时不影响电学性能和弯度。
任选的无机添加剂的平均粒径在0.5-10.0μm范围内,或在添加剂为有机金属化合物形式时,分散至分子水平。
4.有机介质
无机组分一般通过机械混合与有机介质混合,从而形成粘性组合物,称作“糊”,具有适合印刷的稠度和流变学特性。可将各种惰性粘滞材料用作有机介质。有机介质须是这样的:无机组分以适合稳定度分散于其中。介质的流变学特性必需使其赋予组合物较好的应用特性,包括:固体的稳定分散性、适合于丝网印刷的的粘度和触变性、基材和糊固体的适合的可湿性、较好的干燥速率、以及较好的烧制特性。本发明的厚膜组合物所使用的有机载体优选非水性惰性液体。可使用各类有机载体的任一种,它们可包括或可不包括增稠剂、稳定剂和/或其它常用添加剂。有机介质一般为聚合物在溶剂中的溶液。此外,少量添加剂,例如表面活性剂,可作为有机介质的一部分。最常见的用于此用途的聚合物是乙基纤维素。其它聚合物的例子包括乙基羟乙基纤维素、木松香、乙基纤维素和酚醛树脂的混合物、低级醇的聚甲基丙烯酸酯,也可使用乙烯乙二醇一醋酸酯的单丁基醚。最常用于厚膜组合物的溶剂为酯醇类和萜,例如α-或β-萜品醇或其同其它溶剂的混合物,例如煤油、邻苯二甲酸二丁酯、丁基卡必醇、丁基卡必醇醋酸酯、己二醇和高沸腾醇和醇酯。此外,挥发性体可包括用于促进施用于基材后使快速硬化的挥发性液体。配制这些和其它溶剂的组合以获得所需的粘度和挥发性。
在有机介质中的聚合物占总组合物的8-11wt%。本发明的厚膜组合物可与有机介质调节至预定的、可丝网印刷的粘度。
厚膜组合物中有机介质和分散系中无机成份的比例依赖于施加糊的方法和所使用的有机介质种类,且可变化。一般分散系会包含70 95wt%的无机组分和5 30wt%的有机介质(载体),以达得良好的湿润。
本发明的导电糊一般由动力混合方便地制得,是一种等同于传统辊轴碾磨机的分散技术。本发明的导电糊优选通过丝网印刷散布于太阳能电池背面的所需部分;在使用该方法散布的同时,优选具有预定范围内的粘度。本发明的导电糊粘度优选80-200PaS,这是用Brookfield HBT粘度计和14号轴的通用杯子在10rpm和25℃下测量的。
本发明的导电糊可直接接触硅晶片使用或印刷于干燥铝膜顶部使用。Ag/Al膜可与Al在称为共加热的过程中进行共同烧制。此外,结合附图(图2)解释使用本发明的导电糊(银/铝导电糊)制备太阳能电池的例子。
首先,制备硅基材102。在硅基材的光接收侧面(表面),安装电极(如主要由Ag组成的电极)104(图2(a))。在基材背面,通过丝网印刷等散布,用作太阳能电池背面电极的铝糊106(尽管只要将其用作太阳能电池,就并不受到特别限制,如PV333,PV322(购自E.I.du Pont de Nemours and Company))然后干燥(图2(b))。然后将本发明的导电糊以部分重叠的方式同铝糊一起散布并干燥,事先将铝糊印刷并干燥(图2(c))。每种糊体的干燥温度优选150℃或更低。而且,铝糊优选干燥膜厚度为40-60μm,且本发明银/铝厚导电糊的度优选15-25μm。同时,铝糊和银/铝导电糊的重叠部分优选约0.5-2.5mm。
接下来,获得的基材在700-950℃温度下烧制,如烧制约1-15分钟,从而获得所需的太阳能电池(图2(d))。自本发明的组合物形成一种电极,其中所述组合物经烧制以除去有机介质并烧结玻璃料。
使用本发明的导电糊获得的太阳能电池,如图2(d)所述,具在基材(如硅基材)102的光接收面(表面)的电极104,在背面,有铝电极110主要包含铝,银/铝电极112主要包含Ag和Al。
实施例
下面结合具体实施例,进一步阐述本发明。在以下的实施例中,本发明银/铝导电糊的一个制造实施例、和一个银/铝导电糊在太阳能电池制造过程中用作硅基材的背面的电极材料的实施例在以下进行描述。
实施例1
以下具体描述实施例1。
将合适量的有机介质、玻璃料、无机添加剂和Ag/Al,在真空搅拌机中混合15-30分钟。通过粉末混合器或辊碾机传送混合物,以使成份充分分散。分散度通过研磨细度(FOG)来衡量。当分散充分后,配制糊体以形成所需的固体含量和粘度值。
太阳能电池的制造
本发明可用于宽范围的半导体设备,尽管它特别适用于光接收组件,例如光电二级管和太阳能电池。下面描述怎样使用本发明组合物形成太阳能电池。
使用获得的银/铝导电糊,以以下顺序形成太阳能电池。
(1)在正面具有银电极的硅基材的背面,印刷新发明的Ag/Al糊,并干燥。典型的干燥厚度在15至25微米范围内。用于太阳能电池(如购自E.I.du Pontde Nemours and Company的PV333)背面电极的铝糊,以40-60微米的干燥膜厚度进行丝网印刷。Ag/Al以5-6mm宽的母线印刷,且铝膜两边都与Ag/Al母线重叠lmm,从而确保导电的连续性。在一些应用中,整个背面可以用Ag/Al网格线覆盖,且在这些情形下,无须印刷Al糊。
(2)然后依据炉尺寸和温度值,将最高温度设置为700至950℃,在炉内烧制印刷薄片1-10分钟。烧制后形成太阳能电池。
测试步骤-效能
将依据上述方法制造的太阳能电池置于商用IV测试器以测量效能。IV测试器内的灯泡以已知密度模拟太阳光,并照射电池正面,将印刷于电池正面的母线与测试器的多个探针连接,电信号通过探针传送至计算机,从而计算效能。
测试步骤-粘附
烧制后,焊料带(涂有62Sn/36Pb/2Ag的铜)焊接至印刷于电池背面的母线。焊接条件一般为345℃下5秒。使用的焊剂为MF200。焊接区域约为2mm×2mm。粘附强度这样获得:以与电池表面呈90度角的方式拉所述带。粘附强度评估为低、适中或好,评估基于这样的假设:小于200g的粘附强度认为“低”,在200-300g的范围内的值为“适中”,在300-400内或更高的值为“好”。
由于本发明仅包含无铅玻璃作为玻璃料,我们用无铅焊料和含铅焊料测试了粘附度。使用的无铅焊料是96.5Sn/3.5Ag。无铅焊料的焊接温度在345-375℃范围,焊料时间为5-7秒。所用焊剂为MF200。
弯曲度判断标准如下:>1mm为“高”,0.6-1mm为中等,<0.6mm为“低”。
实施例的组合物列入表2。表2所述的玻璃组合物具体描述于表1中。实施例的性能特征列于表3。
Figure G06174808X20060515D000091
表2.组合物实施例(总组合物计重量百分比)
  实施例 玻璃 玻璃II 玻璃III 玻璃IV 玻璃V TiB2 Bi2O3 Cu 有机
  1   5.12   68.98   2.47   0.20   23.23
  2   5.12   68.98   2.47   0.20   23.23
  3   5.12   68.98   2.47   0.20   23.23
  4   5.12   68.98   2.47   0.20   23.23
  5   5.12   68.98   2.47   0.20   23.23
  6   2.66   68.98   2.47   0.75   1.0   23.23
表3.实施例组合物的性能特征
Figure G06174808X20060515D000101

Claims (9)

1.一种导电厚膜组合物,包含:
(a)导电金属粒子,它包括银粒子和铝粒子的混合物;
(b)玻璃料,所述玻璃料不含Pb;分散于
(c)有机介质中;
所述导电金属粒子的平均粒径在0.5-10.0微米范围内;
所述玻璃料包含,以玻璃料组合物总重量百分比计的下列物质:SiO2 0.5-35,Al2O3 0-5,B2O3 1-15,ZnO 0-15和Bi2O3 55-90;
所述组合物还包含
(d)一种或多种无机添加剂,所述无机添加剂选自:(1)Cu和Bi;(2)能产生Cu和Bi的化合物;以及(4)它们的混合物。
2.如权利要求1所述的组合物,其特征在于所述能产生Cu和Bi的化合物各自为Cu的氧化物和Bi的氧化物。
3.如权利要求1所述的组合物,其特征在于它还包括一种或多种无机添加剂,该无机添加剂选自:(1)TiB2、Ti、Al、Sn、Sb、Cr、Fe、Mn、Co、Ni、Ru和B;(2)能产生选自以下的金属元素的化合物:Ti、Al、Sn、Sb、Cr、Fe、Mn、Co、Ni、Ru和B;以及(4)它们的混合物。
4.如权利要求3所述的组合物,其特征在于所述能产生Ti、Al、Sn、Sb、Cr、Fe、Mn、Co、Ni、Ru和B金属元素的化合物是Ti、Al、Sn、Sb、Cr、Fe、Mn、Co、Ni、Ru和B各自的氧化物。
5.如权利要求1所述的组合物,包含,以组合物总重量计:
40-68.98重量百分数的Ag粒子,
2-10重量百分数的所述玻璃料,
1-5重量百分数的Al粒子,
0.2-2重量百分数的无机添加剂,和
23.23-50重量百分数的有机介质。
6.如权利要求1所述的组合物,其特征在于所述导电金属粒子为选自下列的形式:(1)片状、(2)球状、和(3)它们的混合物。
7.如权利要求1所述的组合物,其特征在于所述玻璃料的软化温度在300-550℃范围。
8.由权利要求1所述的组合物形成的电极,其特征在于,所述组合物经过燃烧,以除去有机介质,并烧结所述玻璃料。
9.一种包含权利要求8所述电极的半导体设备。
CN200610074808XA 2005-04-14 2006-04-14 导电的厚膜组合物、电极和所形成的半导体设备 Active CN101055776B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/106,262 US7494607B2 (en) 2005-04-14 2005-04-14 Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
US11/106,262 2005-04-14

Publications (2)

Publication Number Publication Date
CN101055776A CN101055776A (zh) 2007-10-17
CN101055776B true CN101055776B (zh) 2012-01-04

Family

ID=36688102

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200610074808XA Active CN101055776B (zh) 2005-04-14 2006-04-14 导电的厚膜组合物、电极和所形成的半导体设备

Country Status (8)

Country Link
US (4) US7494607B2 (zh)
EP (1) EP1713094B1 (zh)
JP (1) JP2006313744A (zh)
KR (1) KR100890866B1 (zh)
CN (1) CN101055776B (zh)
AU (1) AU2006201557A1 (zh)
DE (1) DE602006003365D1 (zh)
TW (1) TW200727503A (zh)

Families Citing this family (189)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6444617A (en) * 1987-08-12 1989-02-17 Seiko Epson Corp Protecting circuit
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
EP1444055A4 (en) * 2001-10-19 2007-04-18 Superior Micropowders Llc BAND-CONSTRUCTED COMPOSITIONS FOR DEPOSITING ELECTRONIC STRUCTURES
US7776507B2 (en) * 2004-07-22 2010-08-17 Toray Industries, Inc. Photosensitive paste and manufacturing method of member for display panel
US20060231802A1 (en) * 2005-04-14 2006-10-19 Takuya Konno Electroconductive thick film composition, electrode, and solar cell formed therefrom
US7494607B2 (en) * 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
US7824579B2 (en) * 2005-06-07 2010-11-02 E. I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7771623B2 (en) * 2005-06-07 2010-08-10 E.I. du Pont de Nemours and Company Dupont (UK) Limited Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7718092B2 (en) * 2005-10-11 2010-05-18 E.I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
WO2007060744A1 (ja) * 2005-11-28 2007-05-31 Mitsubishi Denki Kabushiki Kaisha 太陽電池セルおよびその製造方法
WO2007149883A1 (en) * 2006-06-19 2007-12-27 Cabot Corporation Photovoltaic conductive features and processes for forming same
AU2007289892B2 (en) * 2006-08-31 2012-09-27 Shin-Etsu Chemical Co., Ltd. Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery
JP5219355B2 (ja) * 2006-10-27 2013-06-26 京セラ株式会社 太陽電池素子の製造方法
US20100066779A1 (en) 2006-11-28 2010-03-18 Hanan Gothait Method and system for nozzle compensation in non-contact material deposition
US20080230119A1 (en) * 2007-03-22 2008-09-25 Hideki Akimoto Paste for back contact-type solar cell
EP2137739B1 (en) * 2007-04-25 2017-11-01 Heraeus Precious Metals North America Conshohocken LLC Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom
TWI370552B (en) * 2007-06-08 2012-08-11 Gigastorage Corp Solar cell
DE102007027999A1 (de) * 2007-06-14 2008-12-18 Leonhard Kurz Gmbh & Co. Kg Heißprägen von Strukturen
US7704416B2 (en) * 2007-06-29 2010-04-27 E.I. Du Pont De Nemours And Company Conductor paste for ceramic substrate and electric circuit
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
KR20100066543A (ko) * 2007-09-07 2010-06-17 이 아이 듀폰 디 네모아 앤드 캄파니 은 및 은을 포함하지 않은 적어도 2가지의 원소를 함유하는 다-원소 합금 분말
TW200926210A (en) * 2007-09-27 2009-06-16 Murata Manufacturing Co Ag electrode paste, solar battery cell, and process for producing the solar battery cell
KR20100080612A (ko) * 2007-10-18 2010-07-09 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: Mg-함유 첨가제
JP2009129600A (ja) * 2007-11-21 2009-06-11 Toyo Aluminium Kk ペースト組成物と太陽電池素子
US8383011B2 (en) * 2008-01-30 2013-02-26 Basf Se Conductive inks with metallo-organic modifiers
US7736546B2 (en) 2008-01-30 2010-06-15 Basf Se Glass frits
US8308993B2 (en) * 2008-01-30 2012-11-13 Basf Se Conductive inks
US20090211626A1 (en) * 2008-02-26 2009-08-27 Hideki Akimoto Conductive paste and grid electrode for silicon solar cells
WO2009128527A1 (ja) * 2008-04-18 2009-10-22 日本電気硝子株式会社 色素増感型太陽電池用ガラス組成物および色素増感型太陽電池用材料
KR100961226B1 (ko) 2008-05-26 2010-06-03 주식회사 나노신소재 환경친화형 태양전지 전극용 페이스트 및 이를 이용한태양전지
US8008179B2 (en) * 2008-05-28 2011-08-30 E.I. Du Pont De Nemours And Company Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers
EP2294584A1 (en) * 2008-05-28 2011-03-16 E. I. du Pont de Nemours and Company Compositions containing submicron particles used in conductors for photovoltaic cells
EP2294586B1 (en) 2008-05-30 2013-07-17 E. I. du Pont de Nemours and Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US8158504B2 (en) * 2008-05-30 2012-04-17 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components
EP2299536A4 (en) * 2008-06-17 2011-12-21 Nippon Electric Glass Co SUBSTRATE FOR SOLAR CELL AND OXIDE SEMICONDUCTOR ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
DE102008032784A1 (de) 2008-07-02 2010-03-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt
CN101339821B (zh) * 2008-08-15 2010-09-01 深圳市圣龙特电子有限公司 无铅无镉铜浆及其制造方法
JP5717043B2 (ja) * 2008-09-04 2015-05-13 日本電気硝子株式会社 電極形成用ガラス組成物および電極形成材料
US7976734B2 (en) * 2008-09-10 2011-07-12 E.I. Du Pont De Nemours And Company Solar cell electrodes
KR101509757B1 (ko) * 2008-09-26 2015-04-06 엘지이노텍 주식회사 태양전지의 제조방법 및 태양전지
EP2187444A1 (en) * 2008-11-13 2010-05-19 Gigastorage Corporation Electroconductive paste composition, electrode and solar cell device comprising same
CN102227387B (zh) 2008-11-30 2015-05-20 迅捷有限公司 将材料施加至衬底上的方法及系统
US20100167032A1 (en) * 2008-12-29 2010-07-01 E.I.Du Pont De Nemours And Company Front electrode for pdp
EP2405449B1 (en) * 2009-03-06 2017-08-16 Toyo Aluminium Kabushiki Kaisha Electrically conductive paste composition and electrically conductive film formed by using the same
KR20110128208A (ko) 2009-03-19 2011-11-28 이 아이 듀폰 디 네모아 앤드 캄파니 태양 전지 전극용 전도성 페이스트
JP2012523668A (ja) * 2009-04-09 2012-10-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 光起電力セル用の導体中に使用されるガラス組成物
JP2012523365A (ja) * 2009-04-09 2012-10-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 光起電力セル用の導体中に使用されるガラス組成物
JP2012523366A (ja) * 2009-04-09 2012-10-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 光起電力セル用の導体中に使用されるガラス組成物
JP5796270B2 (ja) * 2009-04-16 2015-10-21 日本電気硝子株式会社 電極形成材料
JP5241595B2 (ja) * 2009-04-30 2013-07-17 三菱電機株式会社 太陽電池の電極形成方法および太陽電池の製造方法
JP2012527346A (ja) 2009-05-18 2012-11-08 エックスジェット・リミテッド 加熱基板に印刷するための方法及び装置
US20100301479A1 (en) 2009-05-28 2010-12-02 E. I. Du Pont De Nemours And Company Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
TW201115592A (en) 2009-06-19 2011-05-01 Du Pont Glass compositions used in conductors for photovoltaic cells
KR101144810B1 (ko) * 2009-07-06 2012-05-11 엘지전자 주식회사 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법
JP2011044426A (ja) 2009-07-24 2011-03-03 Nippon Electric Glass Co Ltd 太陽電池用導電膜付ガラス基板
JP5649290B2 (ja) 2009-07-30 2015-01-07 株式会社ノリタケカンパニーリミテド 太陽電池電極用無鉛導電性組成物
KR101139459B1 (ko) * 2009-08-27 2012-04-30 엘지전자 주식회사 태양전지 및 그 제조방법
TWI553663B (zh) * 2009-09-04 2016-10-11 巴地斯顏料化工廠 用於印刷電極之組合物
KR20120051764A (ko) * 2009-09-08 2012-05-22 이 아이 듀폰 디 네모아 앤드 캄파니 광전지용 전도체
KR102071006B1 (ko) * 2009-11-11 2020-01-30 삼성전자주식회사 도전성 페이스트 및 태양 전지
EP2325848B1 (en) * 2009-11-11 2017-07-19 Samsung Electronics Co., Ltd. Conductive paste and solar cell
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
CN102667961A (zh) * 2009-11-25 2012-09-12 E·I·内穆尔杜邦公司 铝浆及其在钝化发射极以及背面接触硅太阳能电池生产中的用途
US20170077324A9 (en) * 2009-11-25 2017-03-16 E I Du Pont De Nemours And Company Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells
US8252204B2 (en) 2009-12-18 2012-08-28 E I Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US20110315210A1 (en) 2009-12-18 2011-12-29 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US20110209751A1 (en) * 2010-01-25 2011-09-01 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
JP5633286B2 (ja) * 2010-01-25 2014-12-03 日立化成株式会社 電極用ペースト組成物および太陽電池
US20110180139A1 (en) * 2010-01-25 2011-07-28 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
JP5633285B2 (ja) 2010-01-25 2014-12-03 日立化成株式会社 電極用ペースト組成物及び太陽電池
US9390829B2 (en) 2010-01-25 2016-07-12 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US20110180138A1 (en) * 2010-01-25 2011-07-28 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US8535971B2 (en) * 2010-02-12 2013-09-17 Heraeus Precious Metals North America Conshohocken Llc Method for applying full back surface field and silver busbar to solar cell
JP6132352B2 (ja) 2010-05-02 2017-05-24 エックスジェット エルティーディー. セルフパージ、沈澱防止、および、ガス除去の構造を備えた印刷システム
JP5746325B2 (ja) 2010-05-04 2015-07-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company 鉛−テルル−ホウ素−酸化物を含有する厚膜ペーストと半導体デバイスの製造においてのそれらの使用
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US20120160314A1 (en) * 2010-06-24 2012-06-28 E. I. Du Pont De Nemours And Company Process for the formation of a silver back anode of a silicon solar cell
JP2013539405A (ja) 2010-07-22 2013-10-24 エックスジェット・リミテッド 印刷ヘッドノズル評価
KR101181190B1 (ko) * 2010-07-30 2012-09-18 엘지이노텍 주식회사 태양 전지 및 이의 후면 전극용 페이스트 조성물
WO2012019065A2 (en) 2010-08-06 2012-02-09 E. I. Du Pont De Nemours And Company Conductive paste for a solar cell electrode
KR20120014821A (ko) 2010-08-10 2012-02-20 엘지이노텍 주식회사 고효율 실리콘 태양전지의 후면전극 형성용 페이스트 조성물 및 그 제조방법과 이를 포함하는 실리콘 태양전지
CN102376379B (zh) * 2010-08-13 2016-04-20 三星电子株式会社 导电糊料及包含用其形成的电极的电子器件和太阳能电池
US8987586B2 (en) 2010-08-13 2015-03-24 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US20130161569A1 (en) * 2010-08-17 2013-06-27 Kentaro Ishihara Glass for use in forming electrodes, and electrode-forming material using same
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
KR101200967B1 (ko) * 2010-09-14 2012-11-13 이원배 세라믹글래스를 이용한 면상발열체
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
JP5933883B2 (ja) 2010-10-18 2016-06-15 エックスジェット エルティーディー. インクジェットヘッドの保管及びクリーニング
US20130216848A1 (en) * 2010-10-20 2013-08-22 Robert Bosch Gmbh Starting material and process for producing a sintered join
US8974703B2 (en) 2010-10-27 2015-03-10 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the same
JP2012129407A (ja) * 2010-12-16 2012-07-05 Kyocera Corp 太陽電池素子の製造方法
US9129725B2 (en) 2010-12-17 2015-09-08 E I Du Pont De Nemours And Company Conductive paste composition containing lithium, and articles made therefrom
US9105370B2 (en) 2011-01-12 2015-08-11 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
US8940195B2 (en) 2011-01-13 2015-01-27 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
US20130049148A1 (en) 2011-02-22 2013-02-28 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US20130061919A1 (en) * 2011-03-18 2013-03-14 E I Du Pont Nemours And Company Method of manufacturing solar cell electrode
US8900487B2 (en) 2011-03-24 2014-12-02 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therefrom
US20130074917A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
US20130074916A1 (en) * 2011-03-24 2013-03-28 E. I. Du Pont De Nemours And Company Process for the production of a mwt silicon solar cell
EP2691963B1 (en) 2011-03-29 2015-02-18 Sun Chemical Corporation High-aspect ratio screen printable thick film paste compositions containing wax thixotropes
US20120255605A1 (en) * 2011-04-06 2012-10-11 E. I. Du Pont De Nemours And Company Method of manufacturing solar cell electrode
JP5120477B2 (ja) 2011-04-07 2013-01-16 日立化成工業株式会社 電極用ペースト組成物及び太陽電池
US9224517B2 (en) 2011-04-07 2015-12-29 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
JP5768455B2 (ja) 2011-04-14 2015-08-26 日立化成株式会社 電極用ペースト組成物及び太陽電池素子
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20120312368A1 (en) * 2011-06-13 2012-12-13 E I Du Pont De Nemours And Company Thick film paste containing bismuth-based oxide and its use in the manufacture of semiconductor devices
US20120312369A1 (en) * 2011-06-13 2012-12-13 E I Du Pont De Nemours And Company Thick film paste containing bismuth-based oxide and its use in the manufacture of semiconductor devices
US9783874B2 (en) 2011-06-30 2017-10-10 E I Du Pont De Nemours And Company Thick film paste and use thereof
US20130004659A1 (en) * 2011-06-30 2013-01-03 E I Du Pont De Nemours And Company Thick film paste and use thereof
CN103688365B (zh) 2011-07-25 2016-09-28 日立化成株式会社 元件及太阳能电池
JP5725180B2 (ja) * 2011-07-25 2015-05-27 日立化成株式会社 素子および太陽電池
US20130192670A1 (en) * 2011-08-11 2013-08-01 E I Du Pont De Nemours And Company Aluminum paste and use thereof in the production of passivated emitter and rear contact silicon solar cells
US20130192671A1 (en) * 2011-08-11 2013-08-01 E I Du Pont De Nemours And Company Conductive metal paste and use thereof
US20130056060A1 (en) * 2011-09-07 2013-03-07 E I Du Pont De Nemours And Company Process for the production of lfc-perc silicon solar cells
JP6068474B2 (ja) * 2011-09-09 2017-01-25 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 銀製の太陽電池接点
JP2013081966A (ja) * 2011-10-06 2013-05-09 Fujitsu Ltd 導電性接合材料、並びに導体の接合方法、及び半導体装置の製造方法
US9023254B2 (en) * 2011-10-20 2015-05-05 E I Du Pont De Nemours And Company Thick film silver paste and its use in the manufacture of semiconductor devices
CN103975392B (zh) * 2011-10-27 2017-09-08 上海匡宇电子技术有限公司 用于形成半导体电极的导电组合物
TWI432551B (zh) * 2011-11-11 2014-04-01 Eternal Chemical Co Ltd 太陽能電池用之導電膠組成物及其應用
EP2782102A4 (en) 2011-11-14 2015-07-15 Hitachi Chemical Co Ltd PULP COMPOSITION FOR ELECTRODE, SOLAR CELL ELEMENT, SOLAR CELL
KR101648918B1 (ko) * 2011-12-06 2016-08-18 주식회사 엘지화학 은 페이스트 조성물을 이용한 후면 전극의 제조방법 및 실리콘 태양전지의 제조방법
US9039942B2 (en) 2011-12-21 2015-05-26 E I Du Pont De Nemours And Company Lead-free conductive paste composition and semiconductor devices made therewith
DE102012221334B4 (de) 2011-12-22 2018-10-25 Schott Ag Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen
EP2607327A1 (en) * 2011-12-23 2013-06-26 Heraeus Precious Metals GmbH & Co. KG Thick-film composition containing antimony oxides and their use in the manufacture of semi-conductor devices
US20130160835A1 (en) * 2011-12-27 2013-06-27 E. I. Du Pont De Nemours And Company Back-side electrode of p-type solar cell and method for forming the same
CN102426875B (zh) * 2011-12-31 2014-04-16 四川虹欧显示器件有限公司 导电浆料、制备方法及由其制得的电极
US20130183795A1 (en) 2012-01-16 2013-07-18 E I Du Pont De Nemours And Company Solar cell back side electrode
JP5598739B2 (ja) 2012-05-18 2014-10-01 株式会社マテリアル・コンセプト 導電性ペースト
WO2013179282A1 (en) * 2012-05-28 2013-12-05 Xjet Ltd. Solar cell electrically conductive structure and method
WO2013188485A1 (en) * 2012-06-12 2013-12-19 Heraeus Precious Metals North America Conshohocken Llc Electroconductive paste with adhesion enhancer
US9236161B2 (en) 2012-09-06 2016-01-12 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US8900488B2 (en) 2012-09-06 2014-12-02 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US9153712B2 (en) * 2012-09-27 2015-10-06 Sunpower Corporation Conductive contact for solar cell
JP6351601B2 (ja) 2012-10-04 2018-07-04 ソーラーシティ コーポレーション 電気めっき金属グリッドを用いた光起電力装置
US9245663B2 (en) * 2012-10-10 2016-01-26 E I Du Pont De Nemours And Company Thick film silver paste and its use in the manufacture of semiconductor devices
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9574091B2 (en) 2012-10-19 2017-02-21 Namics Corporation Conductive paste
EP2749545B1 (en) 2012-12-28 2018-10-03 Heraeus Deutschland GmbH & Co. KG Binary glass frits used in N-Type solar cell production
EP2750141B1 (en) * 2012-12-28 2018-02-07 Heraeus Deutschland GmbH & Co. KG An electro-conductive paste comprising coarse inorganic oxide particles in the preparation of electrodes in MWT solar cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US10117265B2 (en) * 2013-01-14 2018-10-30 Telefonaktiebolaget Lm Ericsson (Publ) Resource scheduling in a wireless communication network
US9236155B2 (en) * 2013-02-04 2016-01-12 E I Du Pont De Nemours And Company Copper paste composition and its use in a method for forming copper conductors on substrates
JP6449788B2 (ja) * 2013-02-25 2019-01-09 サン−ゴバン グラス フランス 有機発光ダイオードを有するデバイスのための基材
US20140261662A1 (en) * 2013-03-18 2014-09-18 E I Du Pont De Nemours And Company Method of manufacturing a solar cell electrode
JP6184731B2 (ja) 2013-04-25 2017-08-23 Dowaエレクトロニクス株式会社 銀−ビスマス粉末、導電性ペースト及び導電膜
KR102032280B1 (ko) * 2013-04-25 2019-10-15 엘지전자 주식회사 태양 전지의 전극용 페이스트 조성물
KR20160007508A (ko) 2013-05-13 2016-01-20 히타치가세이가부시끼가이샤 전극 형성용 조성물, 태양 전지 소자 및 태양 전지
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
RU2531519C1 (ru) * 2013-05-27 2014-10-20 Закрытое акционерное общество "Монокристалл" ЗАО "Монокристалл" Алюминиевая паста для кремниевых солнечных элементов
DE102013216191B4 (de) * 2013-08-14 2021-10-21 Faurecia Innenraum Systeme Gmbh Verfahren zur Herstellung eines Trägerelements und Trägerelement für ein Transportmittel
CN105492548A (zh) * 2013-09-16 2016-04-13 贺利氏贵金属北美康舍霍肯有限责任公司 具有促粘玻璃的导电浆料
US20150075597A1 (en) * 2013-09-16 2015-03-19 Heraeus Precious Metals North America Conshohocken Llc Electroconductive paste with adhension promoting glass
EP2848657A1 (en) * 2013-09-16 2015-03-18 Heraeus Precious Metals North America Conshohocken LLC Electroconductive paste with adhesion promoting glass
WO2015056232A1 (en) 2013-10-17 2015-04-23 Xjet Ltd. Support ink for three dimensional (3d) printing
US9666731B2 (en) 2013-10-21 2017-05-30 Samsung Sdi Co., Ltd. Composition for solar cell electrodes, electrode fabricated using the same, and solar cell having the electrode
EP3076771B1 (en) * 2013-11-28 2018-08-08 Toyo Aluminium Kabushiki Kaisha Method for manufacturing circuit board and circuit board
JP6046753B2 (ja) 2014-01-17 2016-12-21 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 改良された接着特性を有する鉛−ビスマス−テルル−ケイ酸塩無機反応系
KR102302357B1 (ko) * 2014-03-20 2021-09-16 나믹스 가부시끼가이샤 도전성 페이스트, 적층 세라믹 부품, 프린트 배선판 및 전자 장치
EP3125300B1 (en) * 2014-03-27 2018-12-12 KYOCERA Corporation Solar cell and solar cell module using same
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
DE112016000610B4 (de) 2015-02-04 2022-12-08 Solar Paste, Llc Elektrisch leitfähige Pastenzusammensetzung, Verwendung dieser in einem Verfahren zur Bildung einer elektrisch leitfähigen Struktur, sowie Gegenstand, Photovoltaikzelle und Halbleitersubstrat, umfassend die Pastenzusammensetzung
KR102059804B1 (ko) * 2015-08-05 2019-12-27 페로 코포레이션 고유전 상수-k ltcc 유전성 조성물 및 장치
US10784383B2 (en) 2015-08-07 2020-09-22 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
WO2017091782A1 (en) * 2015-11-24 2017-06-01 Plant Pv, Inc Fired multilayer stacks for use in integrated circuits and solar cells
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
CN108604610A (zh) * 2016-02-03 2018-09-28 三菱电机株式会社 太阳能电池模块及其制造方法
JP2017162636A (ja) * 2016-03-09 2017-09-14 ナミックス株式会社 導電性ペースト及び太陽電池
DE102017003604A1 (de) 2016-04-13 2017-10-19 E.I. Du Pont De Nemours And Company Leitfähige Pastenzusammensetzung und damit angefertigte Halbleitervorrichtungen
US10134925B2 (en) 2016-04-13 2018-11-20 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
JP6688500B2 (ja) 2016-06-29 2020-04-28 ナミックス株式会社 導電性ペースト及び太陽電池
KR102023990B1 (ko) * 2016-08-03 2019-09-24 페로 코포레이션 반도체 소자용 패시베이션 유리
US10741300B2 (en) 2016-10-07 2020-08-11 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US10593439B2 (en) 2016-10-21 2020-03-17 Dupont Electronics, Inc. Conductive paste composition and semiconductor devices made therewith
WO2018102165A2 (en) * 2016-11-30 2018-06-07 Saint-Gobain Performance Plastics Corporation Electrode and method for making an electrode
TWI745562B (zh) 2017-04-18 2021-11-11 美商太陽帕斯特有限責任公司 導電糊料組成物及用其製成的半導體裝置
WO2018209147A1 (en) * 2017-05-10 2018-11-15 PLANT PV, Inc. Multi-layer metal film stacks for shingled silicon solar cell arrays
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
TWI688551B (zh) * 2018-06-25 2020-03-21 優陽材料科技股份有限公司 太陽能電池導電漿及其製造方法、以及高方阻太陽能電池電極的製造方法
US20210126141A1 (en) * 2019-10-25 2021-04-29 Dupont Electronics, Inc. Conductive paste for n-type solar cell, method for manufacturing n-type solar cell and n-type solar cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device
US6406646B1 (en) * 1999-12-17 2002-06-18 Daejoo Fine Chemical Co., Ltd. Resistive paste for the formation of electrically heat-generating thick film
US6710239B2 (en) * 2001-01-19 2004-03-23 Sharp Kabushiki Kaisha Solar cell, interconnector for solar cell, and solar cell string

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US302557A (en) * 1884-07-29 Walter k
GB1506450A (en) * 1974-09-18 1978-04-05 Siemens Ag Pastes for the production of thick-film conductor paths
US4414143A (en) * 1981-05-06 1983-11-08 E. I. Du Pont De Nemours & Co. Conductor compositions
JPS6249676A (ja) 1985-08-29 1987-03-04 Sharp Corp 太陽電池
US5302557A (en) * 1991-12-03 1994-04-12 E. I. Du Pont De Nemours And Company Automotive glass thick film conductor paste
US5378408A (en) * 1993-07-29 1995-01-03 E. I. Du Pont De Nemours And Company Lead-free thick film paste composition
US5439852A (en) * 1994-08-01 1995-08-08 E. I. Du Pont De Nemours And Company Cadmium-free and lead-free thick film conductor composition
JP3625081B2 (ja) * 1994-11-25 2005-03-02 株式会社村田製作所 太陽電池の製造方法
JP3211641B2 (ja) * 1995-09-22 2001-09-25 株式会社村田製作所 導電性組成物
JP3209089B2 (ja) * 1996-05-09 2001-09-17 昭栄化学工業株式会社 導電性ペースト
JP3510761B2 (ja) * 1997-03-26 2004-03-29 太陽インキ製造株式会社 アルカリ現像型光硬化性導電性ペースト組成物及びそれを用いて電極形成したプラズマディスプレイパネル
JP3920449B2 (ja) 1998-03-13 2007-05-30 太陽インキ製造株式会社 アルカリ現像型光硬化性組成物及びそれを用いて得られる焼成物パターン
JPH11329072A (ja) * 1998-05-13 1999-11-30 Murata Mfg Co Ltd 導電ペースト及びそれを用いた太陽電池
JP2000090733A (ja) * 1998-09-14 2000-03-31 Murata Mfg Co Ltd 導電性ペースト及びそれを用いた太陽電池
JP3430068B2 (ja) 1999-04-16 2003-07-28 シャープ株式会社 太陽電池の電極
JP4331827B2 (ja) 1999-06-29 2009-09-16 京セラ株式会社 太陽電池素子の製造方法
JP2001127317A (ja) 1999-10-28 2001-05-11 Kyocera Corp 太陽電池の製造方法
JP2001243836A (ja) 1999-12-21 2001-09-07 Murata Mfg Co Ltd 導電性ペースト及びそれを用いた印刷配線板
US6738251B2 (en) * 2000-01-28 2004-05-18 Tdk Corporation Conductive pattern incorporated in a multilayered substrate, multilayered substrate incorporating a conductive pattern, and a method of fabricating a multilayered substrate
JP2001313400A (ja) 2000-04-28 2001-11-09 Kyocera Corp 太陽電池素子の形成方法
JP2002141520A (ja) * 2000-10-31 2002-05-17 Kyocera Corp 太陽電池素子およびその製造方法
JP4668438B2 (ja) * 2001-03-08 2011-04-13 住友ゴム工業株式会社 電磁波シールド板及びその製造方法
GB0108886D0 (en) * 2001-04-09 2001-05-30 Du Pont Conductor composition II
CN1307124C (zh) * 2001-10-09 2007-03-28 E·I·内穆尔杜邦公司 用于氮化铝基片上的厚膜导体组合物
JP3910072B2 (ja) 2002-01-30 2007-04-25 東洋アルミニウム株式会社 ペースト組成物およびそれを用いた太陽電池
US20040055635A1 (en) 2002-09-19 2004-03-25 Hiroshi Nagakubo Conductive paste, method for manufacturing solar battery, and solar battery
JP2004146521A (ja) 2002-10-23 2004-05-20 Sharp Corp 銀電極用ペーストおよびそれを用いた太陽電池セル
JP4103672B2 (ja) * 2003-04-28 2008-06-18 株式会社村田製作所 導電性ペーストおよびガラス回路構造物
US7138347B2 (en) * 2003-08-14 2006-11-21 E. I. Du Pont De Nemours And Company Thick-film conductor paste for automotive glass
US20060001009A1 (en) * 2004-06-30 2006-01-05 Garreau-Iles Angelique Genevie Thick-film conductive paste
EP1739690B1 (en) * 2004-07-01 2015-04-01 Toyo Aluminium Kabushiki Kaisha Paste composition and solar cell element employing same
US7569165B2 (en) * 2005-03-09 2009-08-04 E. I. Du Pont De Nemours And Company Black conductive compositions, black electrodes, and methods of forming thereof
US7494607B2 (en) * 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
US7771623B2 (en) * 2005-06-07 2010-08-10 E.I. du Pont de Nemours and Company Dupont (UK) Limited Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7824579B2 (en) * 2005-06-07 2010-11-02 E. I. Du Pont De Nemours And Company Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256513A (en) * 1978-10-19 1981-03-17 Matsushita Electric Industrial Co., Ltd. Photoelectric conversion device
US6406646B1 (en) * 1999-12-17 2002-06-18 Daejoo Fine Chemical Co., Ltd. Resistive paste for the formation of electrically heat-generating thick film
US6710239B2 (en) * 2001-01-19 2004-03-23 Sharp Kabushiki Kaisha Solar cell, interconnector for solar cell, and solar cell string

Also Published As

Publication number Publication date
EP1713094B1 (en) 2008-10-29
KR20060108552A (ko) 2006-10-18
DE602006003365D1 (de) 2008-12-11
TW200727503A (en) 2007-07-16
US20090140217A1 (en) 2009-06-04
US20120119165A1 (en) 2012-05-17
EP1713094A2 (en) 2006-10-18
EP1713094A3 (en) 2007-03-07
US20110006268A1 (en) 2011-01-13
KR100890866B1 (ko) 2009-03-27
AU2006201557A1 (en) 2006-11-02
JP2006313744A (ja) 2006-11-16
CN101055776A (zh) 2007-10-17
US20060231803A1 (en) 2006-10-19
US8123985B2 (en) 2012-02-28
US7494607B2 (en) 2009-02-24

Similar Documents

Publication Publication Date Title
CN101055776B (zh) 导电的厚膜组合物、电极和所形成的半导体设备
US7718093B2 (en) Electroconductive thick film composition, electrode, and solar cell formed therefrom
US9054242B2 (en) Process for the production of a MWT silicon solar cell
US20080223446A1 (en) Method of manufacture of semiconductor device and conductive compositions used therein
EP2319051B1 (en) Aluminum pastes and use thereof in the production of silicon solar cells
KR20110051295A (ko) 태양 전지 전극
WO2016111299A1 (ja) 導電性組成物、半導体素子および太陽電池素子
JP2018078120A (ja) 酸化アンチモンを含有する厚膜組成物および半導体デバイスの製造におけるその使用
US8748304B2 (en) Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
US8128846B2 (en) Silver composition for micro-deposition direct writing silver conductor lines on photovoltaic wafers
KR20220047405A (ko) 태양전지 및 그 제조방법
WO2009146354A1 (en) Methods using compositions containing submicron particles used in conductors for photovoltaic cells
US8008179B2 (en) Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers
EP2286417A1 (en) Conductors for photovoltaic cells: compositions containing submicron particles

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20201222

Address after: Delaware, USA

Patentee after: DuPont Electronics

Address before: Delaware, USA

Patentee before: E.I. Nemours DuPont

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210425

Address after: Delaware, USA

Patentee after: Sun paster Co.,Ltd.

Address before: Delaware, USA

Patentee before: DuPont Electronics

TR01 Transfer of patent right
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20071017

Assignee: Jiangsu SOTE Electronic Material Co.,Ltd.

Assignor: Sun paster Co.,Ltd.

Contract record no.: X2021990000521

Denomination of invention: Conductive thick film composition, electrode and formed semiconductor device

Granted publication date: 20120104

License type: Common License

Record date: 20210826

EE01 Entry into force of recordation of patent licensing contract