CN101055776B - 导电的厚膜组合物、电极和所形成的半导体设备 - Google Patents
导电的厚膜组合物、电极和所形成的半导体设备 Download PDFInfo
- Publication number
- CN101055776B CN101055776B CN200610074808XA CN200610074808A CN101055776B CN 101055776 B CN101055776 B CN 101055776B CN 200610074808X A CN200610074808X A CN 200610074808XA CN 200610074808 A CN200610074808 A CN 200610074808A CN 101055776 B CN101055776 B CN 101055776B
- Authority
- CN
- China
- Prior art keywords
- composition
- paste
- electrode
- frit
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 68
- 229910052709 silver Inorganic materials 0.000 claims abstract description 53
- 239000011521 glass Substances 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 239000002923 metal particle Substances 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 53
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 45
- 239000004332 silver Substances 0.000 claims description 45
- 239000000654 additive Substances 0.000 claims description 16
- 230000000996 additive effect Effects 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 abstract description 8
- 229910052737 gold Inorganic materials 0.000 abstract description 7
- 229910052697 platinum Inorganic materials 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 14
- 239000010949 copper Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 8
- 238000010304 firing Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005331 crown glasses (windows) Substances 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- -1 ester alcohols Chemical class 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910000714 At alloy Inorganic materials 0.000 description 1
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000320 mechanical mixture Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Ceramic Engineering (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
实施例 | 玻璃 | 玻璃II | 玻璃III | 玻璃IV | 玻璃V | 银 | 铝 | TiB2 | Bi2O3 | Cu | 有机 |
1 | 5.12 | 68.98 | 2.47 | 0.20 | 23.23 | ||||||
2 | 5.12 | 68.98 | 2.47 | 0.20 | 23.23 | ||||||
3 | 5.12 | 68.98 | 2.47 | 0.20 | 23.23 | ||||||
4 | 5.12 | 68.98 | 2.47 | 0.20 | 23.23 | ||||||
5 | 5.12 | 68.98 | 2.47 | 0.20 | 23.23 | ||||||
6 | 2.66 | 68.98 | 2.47 | 0.75 | 1.0 | 23.23 |
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/106,262 US7494607B2 (en) | 2005-04-14 | 2005-04-14 | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US11/106,262 | 2005-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101055776A CN101055776A (zh) | 2007-10-17 |
CN101055776B true CN101055776B (zh) | 2012-01-04 |
Family
ID=36688102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610074808XA Active CN101055776B (zh) | 2005-04-14 | 2006-04-14 | 导电的厚膜组合物、电极和所形成的半导体设备 |
Country Status (8)
Country | Link |
---|---|
US (4) | US7494607B2 (zh) |
EP (1) | EP1713094B1 (zh) |
JP (1) | JP2006313744A (zh) |
KR (1) | KR100890866B1 (zh) |
CN (1) | CN101055776B (zh) |
AU (1) | AU2006201557A1 (zh) |
DE (1) | DE602006003365D1 (zh) |
TW (1) | TW200727503A (zh) |
Families Citing this family (189)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6444617A (en) * | 1987-08-12 | 1989-02-17 | Seiko Epson Corp | Protecting circuit |
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
EP1444055A4 (en) * | 2001-10-19 | 2007-04-18 | Superior Micropowders Llc | BAND-CONSTRUCTED COMPOSITIONS FOR DEPOSITING ELECTRONIC STRUCTURES |
US7776507B2 (en) * | 2004-07-22 | 2010-08-17 | Toray Industries, Inc. | Photosensitive paste and manufacturing method of member for display panel |
US20060231802A1 (en) * | 2005-04-14 | 2006-10-19 | Takuya Konno | Electroconductive thick film composition, electrode, and solar cell formed therefrom |
US7494607B2 (en) * | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US7824579B2 (en) * | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
WO2007060744A1 (ja) * | 2005-11-28 | 2007-05-31 | Mitsubishi Denki Kabushiki Kaisha | 太陽電池セルおよびその製造方法 |
WO2007149883A1 (en) * | 2006-06-19 | 2007-12-27 | Cabot Corporation | Photovoltaic conductive features and processes for forming same |
AU2007289892B2 (en) * | 2006-08-31 | 2012-09-27 | Shin-Etsu Chemical Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
JP5219355B2 (ja) * | 2006-10-27 | 2013-06-26 | 京セラ株式会社 | 太陽電池素子の製造方法 |
US20100066779A1 (en) | 2006-11-28 | 2010-03-18 | Hanan Gothait | Method and system for nozzle compensation in non-contact material deposition |
US20080230119A1 (en) * | 2007-03-22 | 2008-09-25 | Hideki Akimoto | Paste for back contact-type solar cell |
EP2137739B1 (en) * | 2007-04-25 | 2017-11-01 | Heraeus Precious Metals North America Conshohocken LLC | Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom |
TWI370552B (en) * | 2007-06-08 | 2012-08-11 | Gigastorage Corp | Solar cell |
DE102007027999A1 (de) * | 2007-06-14 | 2008-12-18 | Leonhard Kurz Gmbh & Co. Kg | Heißprägen von Strukturen |
US7704416B2 (en) * | 2007-06-29 | 2010-04-27 | E.I. Du Pont De Nemours And Company | Conductor paste for ceramic substrate and electric circuit |
US8309844B2 (en) * | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
KR20100066543A (ko) * | 2007-09-07 | 2010-06-17 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 은 및 은을 포함하지 않은 적어도 2가지의 원소를 함유하는 다-원소 합금 분말 |
TW200926210A (en) * | 2007-09-27 | 2009-06-16 | Murata Manufacturing Co | Ag electrode paste, solar battery cell, and process for producing the solar battery cell |
KR20100080612A (ko) * | 2007-10-18 | 2010-07-09 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 반도체 소자의 제조에 사용하기 위한 무연 전도성 조성물 및 공정: Mg-함유 첨가제 |
JP2009129600A (ja) * | 2007-11-21 | 2009-06-11 | Toyo Aluminium Kk | ペースト組成物と太陽電池素子 |
US8383011B2 (en) * | 2008-01-30 | 2013-02-26 | Basf Se | Conductive inks with metallo-organic modifiers |
US7736546B2 (en) | 2008-01-30 | 2010-06-15 | Basf Se | Glass frits |
US8308993B2 (en) * | 2008-01-30 | 2012-11-13 | Basf Se | Conductive inks |
US20090211626A1 (en) * | 2008-02-26 | 2009-08-27 | Hideki Akimoto | Conductive paste and grid electrode for silicon solar cells |
WO2009128527A1 (ja) * | 2008-04-18 | 2009-10-22 | 日本電気硝子株式会社 | 色素増感型太陽電池用ガラス組成物および色素増感型太陽電池用材料 |
KR100961226B1 (ko) | 2008-05-26 | 2010-06-03 | 주식회사 나노신소재 | 환경친화형 태양전지 전극용 페이스트 및 이를 이용한태양전지 |
US8008179B2 (en) * | 2008-05-28 | 2011-08-30 | E.I. Du Pont De Nemours And Company | Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers |
EP2294584A1 (en) * | 2008-05-28 | 2011-03-16 | E. I. du Pont de Nemours and Company | Compositions containing submicron particles used in conductors for photovoltaic cells |
EP2294586B1 (en) | 2008-05-30 | 2013-07-17 | E. I. du Pont de Nemours and Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
US8158504B2 (en) * | 2008-05-30 | 2012-04-17 | E. I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices—organic medium components |
EP2299536A4 (en) * | 2008-06-17 | 2011-12-21 | Nippon Electric Glass Co | SUBSTRATE FOR SOLAR CELL AND OXIDE SEMICONDUCTOR ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL |
US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
DE102008032784A1 (de) | 2008-07-02 | 2010-03-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Zusammensetzung mit pastöser Konsistenz für die Ausbildung elektrischer Kontakte auf einem Silicium-Solarwafer und damit hergestellter Kontakt |
CN101339821B (zh) * | 2008-08-15 | 2010-09-01 | 深圳市圣龙特电子有限公司 | 无铅无镉铜浆及其制造方法 |
JP5717043B2 (ja) * | 2008-09-04 | 2015-05-13 | 日本電気硝子株式会社 | 電極形成用ガラス組成物および電極形成材料 |
US7976734B2 (en) * | 2008-09-10 | 2011-07-12 | E.I. Du Pont De Nemours And Company | Solar cell electrodes |
KR101509757B1 (ko) * | 2008-09-26 | 2015-04-06 | 엘지이노텍 주식회사 | 태양전지의 제조방법 및 태양전지 |
EP2187444A1 (en) * | 2008-11-13 | 2010-05-19 | Gigastorage Corporation | Electroconductive paste composition, electrode and solar cell device comprising same |
CN102227387B (zh) | 2008-11-30 | 2015-05-20 | 迅捷有限公司 | 将材料施加至衬底上的方法及系统 |
US20100167032A1 (en) * | 2008-12-29 | 2010-07-01 | E.I.Du Pont De Nemours And Company | Front electrode for pdp |
EP2405449B1 (en) * | 2009-03-06 | 2017-08-16 | Toyo Aluminium Kabushiki Kaisha | Electrically conductive paste composition and electrically conductive film formed by using the same |
KR20110128208A (ko) | 2009-03-19 | 2011-11-28 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 태양 전지 전극용 전도성 페이스트 |
JP2012523668A (ja) * | 2009-04-09 | 2012-10-04 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 光起電力セル用の導体中に使用されるガラス組成物 |
JP2012523365A (ja) * | 2009-04-09 | 2012-10-04 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 光起電力セル用の導体中に使用されるガラス組成物 |
JP2012523366A (ja) * | 2009-04-09 | 2012-10-04 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 光起電力セル用の導体中に使用されるガラス組成物 |
JP5796270B2 (ja) * | 2009-04-16 | 2015-10-21 | 日本電気硝子株式会社 | 電極形成材料 |
JP5241595B2 (ja) * | 2009-04-30 | 2013-07-17 | 三菱電機株式会社 | 太陽電池の電極形成方法および太陽電池の製造方法 |
JP2012527346A (ja) | 2009-05-18 | 2012-11-08 | エックスジェット・リミテッド | 加熱基板に印刷するための方法及び装置 |
US20100301479A1 (en) | 2009-05-28 | 2010-12-02 | E. I. Du Pont De Nemours And Company | Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines |
TW201115592A (en) | 2009-06-19 | 2011-05-01 | Du Pont | Glass compositions used in conductors for photovoltaic cells |
KR101144810B1 (ko) * | 2009-07-06 | 2012-05-11 | 엘지전자 주식회사 | 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법 |
JP2011044426A (ja) | 2009-07-24 | 2011-03-03 | Nippon Electric Glass Co Ltd | 太陽電池用導電膜付ガラス基板 |
JP5649290B2 (ja) | 2009-07-30 | 2015-01-07 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用無鉛導電性組成物 |
KR101139459B1 (ko) * | 2009-08-27 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
TWI553663B (zh) * | 2009-09-04 | 2016-10-11 | 巴地斯顏料化工廠 | 用於印刷電極之組合物 |
KR20120051764A (ko) * | 2009-09-08 | 2012-05-22 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 광전지용 전도체 |
KR102071006B1 (ko) * | 2009-11-11 | 2020-01-30 | 삼성전자주식회사 | 도전성 페이스트 및 태양 전지 |
EP2325848B1 (en) * | 2009-11-11 | 2017-07-19 | Samsung Electronics Co., Ltd. | Conductive paste and solar cell |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
CN102667961A (zh) * | 2009-11-25 | 2012-09-12 | E·I·内穆尔杜邦公司 | 铝浆及其在钝化发射极以及背面接触硅太阳能电池生产中的用途 |
US20170077324A9 (en) * | 2009-11-25 | 2017-03-16 | E I Du Pont De Nemours And Company | Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells |
US8252204B2 (en) | 2009-12-18 | 2012-08-28 | E I Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
US20110315210A1 (en) | 2009-12-18 | 2011-12-29 | E. I. Du Pont De Nemours And Company | Glass compositions used in conductors for photovoltaic cells |
US20110209751A1 (en) * | 2010-01-25 | 2011-09-01 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
JP5633286B2 (ja) * | 2010-01-25 | 2014-12-03 | 日立化成株式会社 | 電極用ペースト組成物および太陽電池 |
US20110180139A1 (en) * | 2010-01-25 | 2011-07-28 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
JP5633285B2 (ja) | 2010-01-25 | 2014-12-03 | 日立化成株式会社 | 電極用ペースト組成物及び太陽電池 |
US9390829B2 (en) | 2010-01-25 | 2016-07-12 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
US20110180138A1 (en) * | 2010-01-25 | 2011-07-28 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
US8535971B2 (en) * | 2010-02-12 | 2013-09-17 | Heraeus Precious Metals North America Conshohocken Llc | Method for applying full back surface field and silver busbar to solar cell |
JP6132352B2 (ja) | 2010-05-02 | 2017-05-24 | エックスジェット エルティーディー. | セルフパージ、沈澱防止、および、ガス除去の構造を備えた印刷システム |
JP5746325B2 (ja) | 2010-05-04 | 2015-07-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | 鉛−テルル−ホウ素−酸化物を含有する厚膜ペーストと半導体デバイスの製造においてのそれらの使用 |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US20120160314A1 (en) * | 2010-06-24 | 2012-06-28 | E. I. Du Pont De Nemours And Company | Process for the formation of a silver back anode of a silicon solar cell |
JP2013539405A (ja) | 2010-07-22 | 2013-10-24 | エックスジェット・リミテッド | 印刷ヘッドノズル評価 |
KR101181190B1 (ko) * | 2010-07-30 | 2012-09-18 | 엘지이노텍 주식회사 | 태양 전지 및 이의 후면 전극용 페이스트 조성물 |
WO2012019065A2 (en) | 2010-08-06 | 2012-02-09 | E. I. Du Pont De Nemours And Company | Conductive paste for a solar cell electrode |
KR20120014821A (ko) | 2010-08-10 | 2012-02-20 | 엘지이노텍 주식회사 | 고효율 실리콘 태양전지의 후면전극 형성용 페이스트 조성물 및 그 제조방법과 이를 포함하는 실리콘 태양전지 |
CN102376379B (zh) * | 2010-08-13 | 2016-04-20 | 三星电子株式会社 | 导电糊料及包含用其形成的电极的电子器件和太阳能电池 |
US8987586B2 (en) | 2010-08-13 | 2015-03-24 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
US20130161569A1 (en) * | 2010-08-17 | 2013-06-27 | Kentaro Ishihara | Glass for use in forming electrodes, and electrode-forming material using same |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
KR101200967B1 (ko) * | 2010-09-14 | 2012-11-13 | 이원배 | 세라믹글래스를 이용한 면상발열체 |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
JP5933883B2 (ja) | 2010-10-18 | 2016-06-15 | エックスジェット エルティーディー. | インクジェットヘッドの保管及びクリーニング |
US20130216848A1 (en) * | 2010-10-20 | 2013-08-22 | Robert Bosch Gmbh | Starting material and process for producing a sintered join |
US8974703B2 (en) | 2010-10-27 | 2015-03-10 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the same |
JP2012129407A (ja) * | 2010-12-16 | 2012-07-05 | Kyocera Corp | 太陽電池素子の製造方法 |
US9129725B2 (en) | 2010-12-17 | 2015-09-08 | E I Du Pont De Nemours And Company | Conductive paste composition containing lithium, and articles made therefrom |
US9105370B2 (en) | 2011-01-12 | 2015-08-11 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
US8940195B2 (en) | 2011-01-13 | 2015-01-27 | Samsung Electronics Co., Ltd. | Conductive paste, and electronic device and solar cell including an electrode formed using the same |
US20130049148A1 (en) | 2011-02-22 | 2013-02-28 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US20130061919A1 (en) * | 2011-03-18 | 2013-03-14 | E I Du Pont Nemours And Company | Method of manufacturing solar cell electrode |
US8900487B2 (en) | 2011-03-24 | 2014-12-02 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therefrom |
US20130074917A1 (en) * | 2011-03-24 | 2013-03-28 | E. I. Du Pont De Nemours And Company | Process for the production of a mwt silicon solar cell |
US20130074916A1 (en) * | 2011-03-24 | 2013-03-28 | E. I. Du Pont De Nemours And Company | Process for the production of a mwt silicon solar cell |
EP2691963B1 (en) | 2011-03-29 | 2015-02-18 | Sun Chemical Corporation | High-aspect ratio screen printable thick film paste compositions containing wax thixotropes |
US20120255605A1 (en) * | 2011-04-06 | 2012-10-11 | E. I. Du Pont De Nemours And Company | Method of manufacturing solar cell electrode |
JP5120477B2 (ja) | 2011-04-07 | 2013-01-16 | 日立化成工業株式会社 | 電極用ペースト組成物及び太陽電池 |
US9224517B2 (en) | 2011-04-07 | 2015-12-29 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
JP5768455B2 (ja) | 2011-04-14 | 2015-08-26 | 日立化成株式会社 | 電極用ペースト組成物及び太陽電池素子 |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US20120312368A1 (en) * | 2011-06-13 | 2012-12-13 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-based oxide and its use in the manufacture of semiconductor devices |
US20120312369A1 (en) * | 2011-06-13 | 2012-12-13 | E I Du Pont De Nemours And Company | Thick film paste containing bismuth-based oxide and its use in the manufacture of semiconductor devices |
US9783874B2 (en) | 2011-06-30 | 2017-10-10 | E I Du Pont De Nemours And Company | Thick film paste and use thereof |
US20130004659A1 (en) * | 2011-06-30 | 2013-01-03 | E I Du Pont De Nemours And Company | Thick film paste and use thereof |
CN103688365B (zh) | 2011-07-25 | 2016-09-28 | 日立化成株式会社 | 元件及太阳能电池 |
JP5725180B2 (ja) * | 2011-07-25 | 2015-05-27 | 日立化成株式会社 | 素子および太陽電池 |
US20130192670A1 (en) * | 2011-08-11 | 2013-08-01 | E I Du Pont De Nemours And Company | Aluminum paste and use thereof in the production of passivated emitter and rear contact silicon solar cells |
US20130192671A1 (en) * | 2011-08-11 | 2013-08-01 | E I Du Pont De Nemours And Company | Conductive metal paste and use thereof |
US20130056060A1 (en) * | 2011-09-07 | 2013-03-07 | E I Du Pont De Nemours And Company | Process for the production of lfc-perc silicon solar cells |
JP6068474B2 (ja) * | 2011-09-09 | 2017-01-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 銀製の太陽電池接点 |
JP2013081966A (ja) * | 2011-10-06 | 2013-05-09 | Fujitsu Ltd | 導電性接合材料、並びに導体の接合方法、及び半導体装置の製造方法 |
US9023254B2 (en) * | 2011-10-20 | 2015-05-05 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
CN103975392B (zh) * | 2011-10-27 | 2017-09-08 | 上海匡宇电子技术有限公司 | 用于形成半导体电极的导电组合物 |
TWI432551B (zh) * | 2011-11-11 | 2014-04-01 | Eternal Chemical Co Ltd | 太陽能電池用之導電膠組成物及其應用 |
EP2782102A4 (en) | 2011-11-14 | 2015-07-15 | Hitachi Chemical Co Ltd | PULP COMPOSITION FOR ELECTRODE, SOLAR CELL ELEMENT, SOLAR CELL |
KR101648918B1 (ko) * | 2011-12-06 | 2016-08-18 | 주식회사 엘지화학 | 은 페이스트 조성물을 이용한 후면 전극의 제조방법 및 실리콘 태양전지의 제조방법 |
US9039942B2 (en) | 2011-12-21 | 2015-05-26 | E I Du Pont De Nemours And Company | Lead-free conductive paste composition and semiconductor devices made therewith |
DE102012221334B4 (de) | 2011-12-22 | 2018-10-25 | Schott Ag | Lötpaste und deren Verwendung zur Front- oder Rückseitenkontaktierung von siliziumbasierten Solarzellen |
EP2607327A1 (en) * | 2011-12-23 | 2013-06-26 | Heraeus Precious Metals GmbH & Co. KG | Thick-film composition containing antimony oxides and their use in the manufacture of semi-conductor devices |
US20130160835A1 (en) * | 2011-12-27 | 2013-06-27 | E. I. Du Pont De Nemours And Company | Back-side electrode of p-type solar cell and method for forming the same |
CN102426875B (zh) * | 2011-12-31 | 2014-04-16 | 四川虹欧显示器件有限公司 | 导电浆料、制备方法及由其制得的电极 |
US20130183795A1 (en) | 2012-01-16 | 2013-07-18 | E I Du Pont De Nemours And Company | Solar cell back side electrode |
JP5598739B2 (ja) | 2012-05-18 | 2014-10-01 | 株式会社マテリアル・コンセプト | 導電性ペースト |
WO2013179282A1 (en) * | 2012-05-28 | 2013-12-05 | Xjet Ltd. | Solar cell electrically conductive structure and method |
WO2013188485A1 (en) * | 2012-06-12 | 2013-12-19 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste with adhesion enhancer |
US9236161B2 (en) | 2012-09-06 | 2016-01-12 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US8900488B2 (en) | 2012-09-06 | 2014-12-02 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US9153712B2 (en) * | 2012-09-27 | 2015-10-06 | Sunpower Corporation | Conductive contact for solar cell |
JP6351601B2 (ja) | 2012-10-04 | 2018-07-04 | ソーラーシティ コーポレーション | 電気めっき金属グリッドを用いた光起電力装置 |
US9245663B2 (en) * | 2012-10-10 | 2016-01-26 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
US9574091B2 (en) | 2012-10-19 | 2017-02-21 | Namics Corporation | Conductive paste |
EP2749545B1 (en) | 2012-12-28 | 2018-10-03 | Heraeus Deutschland GmbH & Co. KG | Binary glass frits used in N-Type solar cell production |
EP2750141B1 (en) * | 2012-12-28 | 2018-02-07 | Heraeus Deutschland GmbH & Co. KG | An electro-conductive paste comprising coarse inorganic oxide particles in the preparation of electrodes in MWT solar cells |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US10117265B2 (en) * | 2013-01-14 | 2018-10-30 | Telefonaktiebolaget Lm Ericsson (Publ) | Resource scheduling in a wireless communication network |
US9236155B2 (en) * | 2013-02-04 | 2016-01-12 | E I Du Pont De Nemours And Company | Copper paste composition and its use in a method for forming copper conductors on substrates |
JP6449788B2 (ja) * | 2013-02-25 | 2019-01-09 | サン−ゴバン グラス フランス | 有機発光ダイオードを有するデバイスのための基材 |
US20140261662A1 (en) * | 2013-03-18 | 2014-09-18 | E I Du Pont De Nemours And Company | Method of manufacturing a solar cell electrode |
JP6184731B2 (ja) | 2013-04-25 | 2017-08-23 | Dowaエレクトロニクス株式会社 | 銀−ビスマス粉末、導電性ペースト及び導電膜 |
KR102032280B1 (ko) * | 2013-04-25 | 2019-10-15 | 엘지전자 주식회사 | 태양 전지의 전극용 페이스트 조성물 |
KR20160007508A (ko) | 2013-05-13 | 2016-01-20 | 히타치가세이가부시끼가이샤 | 전극 형성용 조성물, 태양 전지 소자 및 태양 전지 |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
RU2531519C1 (ru) * | 2013-05-27 | 2014-10-20 | Закрытое акционерное общество "Монокристалл" ЗАО "Монокристалл" | Алюминиевая паста для кремниевых солнечных элементов |
DE102013216191B4 (de) * | 2013-08-14 | 2021-10-21 | Faurecia Innenraum Systeme Gmbh | Verfahren zur Herstellung eines Trägerelements und Trägerelement für ein Transportmittel |
CN105492548A (zh) * | 2013-09-16 | 2016-04-13 | 贺利氏贵金属北美康舍霍肯有限责任公司 | 具有促粘玻璃的导电浆料 |
US20150075597A1 (en) * | 2013-09-16 | 2015-03-19 | Heraeus Precious Metals North America Conshohocken Llc | Electroconductive paste with adhension promoting glass |
EP2848657A1 (en) * | 2013-09-16 | 2015-03-18 | Heraeus Precious Metals North America Conshohocken LLC | Electroconductive paste with adhesion promoting glass |
WO2015056232A1 (en) | 2013-10-17 | 2015-04-23 | Xjet Ltd. | Support ink for three dimensional (3d) printing |
US9666731B2 (en) | 2013-10-21 | 2017-05-30 | Samsung Sdi Co., Ltd. | Composition for solar cell electrodes, electrode fabricated using the same, and solar cell having the electrode |
EP3076771B1 (en) * | 2013-11-28 | 2018-08-08 | Toyo Aluminium Kabushiki Kaisha | Method for manufacturing circuit board and circuit board |
JP6046753B2 (ja) | 2014-01-17 | 2016-12-21 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 改良された接着特性を有する鉛−ビスマス−テルル−ケイ酸塩無機反応系 |
KR102302357B1 (ko) * | 2014-03-20 | 2021-09-16 | 나믹스 가부시끼가이샤 | 도전성 페이스트, 적층 세라믹 부품, 프린트 배선판 및 전자 장치 |
EP3125300B1 (en) * | 2014-03-27 | 2018-12-12 | KYOCERA Corporation | Solar cell and solar cell module using same |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
DE112016000610B4 (de) | 2015-02-04 | 2022-12-08 | Solar Paste, Llc | Elektrisch leitfähige Pastenzusammensetzung, Verwendung dieser in einem Verfahren zur Bildung einer elektrisch leitfähigen Struktur, sowie Gegenstand, Photovoltaikzelle und Halbleitersubstrat, umfassend die Pastenzusammensetzung |
KR102059804B1 (ko) * | 2015-08-05 | 2019-12-27 | 페로 코포레이션 | 고유전 상수-k ltcc 유전성 조성물 및 장치 |
US10784383B2 (en) | 2015-08-07 | 2020-09-22 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
WO2017091782A1 (en) * | 2015-11-24 | 2017-06-01 | Plant Pv, Inc | Fired multilayer stacks for use in integrated circuits and solar cells |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
CN108604610A (zh) * | 2016-02-03 | 2018-09-28 | 三菱电机株式会社 | 太阳能电池模块及其制造方法 |
JP2017162636A (ja) * | 2016-03-09 | 2017-09-14 | ナミックス株式会社 | 導電性ペースト及び太陽電池 |
DE102017003604A1 (de) | 2016-04-13 | 2017-10-19 | E.I. Du Pont De Nemours And Company | Leitfähige Pastenzusammensetzung und damit angefertigte Halbleitervorrichtungen |
US10134925B2 (en) | 2016-04-13 | 2018-11-20 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
JP6688500B2 (ja) | 2016-06-29 | 2020-04-28 | ナミックス株式会社 | 導電性ペースト及び太陽電池 |
KR102023990B1 (ko) * | 2016-08-03 | 2019-09-24 | 페로 코포레이션 | 반도체 소자용 패시베이션 유리 |
US10741300B2 (en) | 2016-10-07 | 2020-08-11 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
US10593439B2 (en) | 2016-10-21 | 2020-03-17 | Dupont Electronics, Inc. | Conductive paste composition and semiconductor devices made therewith |
WO2018102165A2 (en) * | 2016-11-30 | 2018-06-07 | Saint-Gobain Performance Plastics Corporation | Electrode and method for making an electrode |
TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
WO2018209147A1 (en) * | 2017-05-10 | 2018-11-15 | PLANT PV, Inc. | Multi-layer metal film stacks for shingled silicon solar cell arrays |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
TWI688551B (zh) * | 2018-06-25 | 2020-03-21 | 優陽材料科技股份有限公司 | 太陽能電池導電漿及其製造方法、以及高方阻太陽能電池電極的製造方法 |
US20210126141A1 (en) * | 2019-10-25 | 2021-04-29 | Dupont Electronics, Inc. | Conductive paste for n-type solar cell, method for manufacturing n-type solar cell and n-type solar cell |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
US6406646B1 (en) * | 1999-12-17 | 2002-06-18 | Daejoo Fine Chemical Co., Ltd. | Resistive paste for the formation of electrically heat-generating thick film |
US6710239B2 (en) * | 2001-01-19 | 2004-03-23 | Sharp Kabushiki Kaisha | Solar cell, interconnector for solar cell, and solar cell string |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US302557A (en) * | 1884-07-29 | Walter k | ||
GB1506450A (en) * | 1974-09-18 | 1978-04-05 | Siemens Ag | Pastes for the production of thick-film conductor paths |
US4414143A (en) * | 1981-05-06 | 1983-11-08 | E. I. Du Pont De Nemours & Co. | Conductor compositions |
JPS6249676A (ja) | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
US5302557A (en) * | 1991-12-03 | 1994-04-12 | E. I. Du Pont De Nemours And Company | Automotive glass thick film conductor paste |
US5378408A (en) * | 1993-07-29 | 1995-01-03 | E. I. Du Pont De Nemours And Company | Lead-free thick film paste composition |
US5439852A (en) * | 1994-08-01 | 1995-08-08 | E. I. Du Pont De Nemours And Company | Cadmium-free and lead-free thick film conductor composition |
JP3625081B2 (ja) * | 1994-11-25 | 2005-03-02 | 株式会社村田製作所 | 太陽電池の製造方法 |
JP3211641B2 (ja) * | 1995-09-22 | 2001-09-25 | 株式会社村田製作所 | 導電性組成物 |
JP3209089B2 (ja) * | 1996-05-09 | 2001-09-17 | 昭栄化学工業株式会社 | 導電性ペースト |
JP3510761B2 (ja) * | 1997-03-26 | 2004-03-29 | 太陽インキ製造株式会社 | アルカリ現像型光硬化性導電性ペースト組成物及びそれを用いて電極形成したプラズマディスプレイパネル |
JP3920449B2 (ja) | 1998-03-13 | 2007-05-30 | 太陽インキ製造株式会社 | アルカリ現像型光硬化性組成物及びそれを用いて得られる焼成物パターン |
JPH11329072A (ja) * | 1998-05-13 | 1999-11-30 | Murata Mfg Co Ltd | 導電ペースト及びそれを用いた太陽電池 |
JP2000090733A (ja) * | 1998-09-14 | 2000-03-31 | Murata Mfg Co Ltd | 導電性ペースト及びそれを用いた太陽電池 |
JP3430068B2 (ja) | 1999-04-16 | 2003-07-28 | シャープ株式会社 | 太陽電池の電極 |
JP4331827B2 (ja) | 1999-06-29 | 2009-09-16 | 京セラ株式会社 | 太陽電池素子の製造方法 |
JP2001127317A (ja) | 1999-10-28 | 2001-05-11 | Kyocera Corp | 太陽電池の製造方法 |
JP2001243836A (ja) | 1999-12-21 | 2001-09-07 | Murata Mfg Co Ltd | 導電性ペースト及びそれを用いた印刷配線板 |
US6738251B2 (en) * | 2000-01-28 | 2004-05-18 | Tdk Corporation | Conductive pattern incorporated in a multilayered substrate, multilayered substrate incorporating a conductive pattern, and a method of fabricating a multilayered substrate |
JP2001313400A (ja) | 2000-04-28 | 2001-11-09 | Kyocera Corp | 太陽電池素子の形成方法 |
JP2002141520A (ja) * | 2000-10-31 | 2002-05-17 | Kyocera Corp | 太陽電池素子およびその製造方法 |
JP4668438B2 (ja) * | 2001-03-08 | 2011-04-13 | 住友ゴム工業株式会社 | 電磁波シールド板及びその製造方法 |
GB0108886D0 (en) * | 2001-04-09 | 2001-05-30 | Du Pont | Conductor composition II |
CN1307124C (zh) * | 2001-10-09 | 2007-03-28 | E·I·内穆尔杜邦公司 | 用于氮化铝基片上的厚膜导体组合物 |
JP3910072B2 (ja) | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
US20040055635A1 (en) | 2002-09-19 | 2004-03-25 | Hiroshi Nagakubo | Conductive paste, method for manufacturing solar battery, and solar battery |
JP2004146521A (ja) | 2002-10-23 | 2004-05-20 | Sharp Corp | 銀電極用ペーストおよびそれを用いた太陽電池セル |
JP4103672B2 (ja) * | 2003-04-28 | 2008-06-18 | 株式会社村田製作所 | 導電性ペーストおよびガラス回路構造物 |
US7138347B2 (en) * | 2003-08-14 | 2006-11-21 | E. I. Du Pont De Nemours And Company | Thick-film conductor paste for automotive glass |
US20060001009A1 (en) * | 2004-06-30 | 2006-01-05 | Garreau-Iles Angelique Genevie | Thick-film conductive paste |
EP1739690B1 (en) * | 2004-07-01 | 2015-04-01 | Toyo Aluminium Kabushiki Kaisha | Paste composition and solar cell element employing same |
US7569165B2 (en) * | 2005-03-09 | 2009-08-04 | E. I. Du Pont De Nemours And Company | Black conductive compositions, black electrodes, and methods of forming thereof |
US7494607B2 (en) * | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
US7824579B2 (en) * | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
-
2005
- 2005-04-14 US US11/106,262 patent/US7494607B2/en active Active
-
2006
- 2006-04-12 AU AU2006201557A patent/AU2006201557A1/en not_active Abandoned
- 2006-04-13 DE DE602006003365T patent/DE602006003365D1/de active Active
- 2006-04-13 EP EP06252076A patent/EP1713094B1/en not_active Revoked
- 2006-04-14 KR KR1020060034128A patent/KR100890866B1/ko not_active IP Right Cessation
- 2006-04-14 JP JP2006112247A patent/JP2006313744A/ja active Pending
- 2006-04-14 CN CN200610074808XA patent/CN101055776B/zh active Active
- 2006-04-14 TW TW95113532A patent/TW200727503A/zh unknown
-
2009
- 2009-02-05 US US12/366,250 patent/US20090140217A1/en not_active Abandoned
-
2010
- 2010-09-24 US US12/834,968 patent/US8123985B2/en active Active
-
2012
- 2012-01-24 US US13/357,073 patent/US20120119165A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
US6406646B1 (en) * | 1999-12-17 | 2002-06-18 | Daejoo Fine Chemical Co., Ltd. | Resistive paste for the formation of electrically heat-generating thick film |
US6710239B2 (en) * | 2001-01-19 | 2004-03-23 | Sharp Kabushiki Kaisha | Solar cell, interconnector for solar cell, and solar cell string |
Also Published As
Publication number | Publication date |
---|---|
EP1713094B1 (en) | 2008-10-29 |
KR20060108552A (ko) | 2006-10-18 |
DE602006003365D1 (de) | 2008-12-11 |
TW200727503A (en) | 2007-07-16 |
US20090140217A1 (en) | 2009-06-04 |
US20120119165A1 (en) | 2012-05-17 |
EP1713094A2 (en) | 2006-10-18 |
EP1713094A3 (en) | 2007-03-07 |
US20110006268A1 (en) | 2011-01-13 |
KR100890866B1 (ko) | 2009-03-27 |
AU2006201557A1 (en) | 2006-11-02 |
JP2006313744A (ja) | 2006-11-16 |
CN101055776A (zh) | 2007-10-17 |
US20060231803A1 (en) | 2006-10-19 |
US8123985B2 (en) | 2012-02-28 |
US7494607B2 (en) | 2009-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101055776B (zh) | 导电的厚膜组合物、电极和所形成的半导体设备 | |
US7718093B2 (en) | Electroconductive thick film composition, electrode, and solar cell formed therefrom | |
US9054242B2 (en) | Process for the production of a MWT silicon solar cell | |
US20080223446A1 (en) | Method of manufacture of semiconductor device and conductive compositions used therein | |
EP2319051B1 (en) | Aluminum pastes and use thereof in the production of silicon solar cells | |
KR20110051295A (ko) | 태양 전지 전극 | |
WO2016111299A1 (ja) | 導電性組成物、半導体素子および太陽電池素子 | |
JP2018078120A (ja) | 酸化アンチモンを含有する厚膜組成物および半導体デバイスの製造におけるその使用 | |
US8748304B2 (en) | Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines | |
US8128846B2 (en) | Silver composition for micro-deposition direct writing silver conductor lines on photovoltaic wafers | |
KR20220047405A (ko) | 태양전지 및 그 제조방법 | |
WO2009146354A1 (en) | Methods using compositions containing submicron particles used in conductors for photovoltaic cells | |
US8008179B2 (en) | Methods using silver compositions for micro-deposition direct writing silver conductor lines on photovoltaic wafers | |
EP2286417A1 (en) | Conductors for photovoltaic cells: compositions containing submicron particles |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201222 Address after: Delaware, USA Patentee after: DuPont Electronics Address before: Delaware, USA Patentee before: E.I. Nemours DuPont |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210425 Address after: Delaware, USA Patentee after: Sun paster Co.,Ltd. Address before: Delaware, USA Patentee before: DuPont Electronics |
|
TR01 | Transfer of patent right | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20071017 Assignee: Jiangsu SOTE Electronic Material Co.,Ltd. Assignor: Sun paster Co.,Ltd. Contract record no.: X2021990000521 Denomination of invention: Conductive thick film composition, electrode and formed semiconductor device Granted publication date: 20120104 License type: Common License Record date: 20210826 |
|
EE01 | Entry into force of recordation of patent licensing contract |