CN101002314A - 微型机械设备 - Google Patents

微型机械设备 Download PDF

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CN101002314A
CN101002314A CNA2005800273116A CN200580027311A CN101002314A CN 101002314 A CN101002314 A CN 101002314A CN A2005800273116 A CNA2005800273116 A CN A2005800273116A CN 200580027311 A CN200580027311 A CN 200580027311A CN 101002314 A CN101002314 A CN 101002314A
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electrode
film
cable
micromachine device
polysilicon
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小仓洋
上田诚二
卷幡胜浩
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

本发明提供一种微型机械设备，其具备由掺杂了杂质的多晶硅构成的焊盘(107a)及焊盘(107b)。

Description

微型机械设备
技术领域
本发明涉及采用薄膜加工制作的设备，尤其涉及被称为微型机器或MEMS(Micro Electro Mechanical Systems)的微型机械设备。
背景技术
以往，在半导体元件等设备和衬底的电连接中，广泛采用了利用由Au(金)或Al(铝)等构成的缆线进行缆线焊接的配线方法。通常，半导体元件等设备的连接用焊盘(pad)由Al膜构成，在该焊盘的Al膜上通过采用了球焊或楔焊的缆线焊接方法来接合由Au或Al构成的缆线。这是因为在半导体元件中作为形成焊盘及配线的材料采用了Al膜。
另一方面，近年来，为了实现通过以往的机械加工而制作的设备的小型化，而使用应用了半导体元件的制造方法的被称为微细加工技术的方法，来制作微型机械设备。在微型机械设备中，作为配线材料(导通材料)，通常使用Al膜或掺杂了杂质的多晶硅膜。微型机械设备在与其它衬底或其它设备电连接后才发挥功能。因此，在微型机械设备上设置用于电连接的电极，通过缆线焊接来电连接该微型机械设备和其它衬底或其它设备。在作为微型机械设备的配线材料采用了Al膜时，由于Al膜与作为缆线焊接配线材料的Au缆线或Al缆线良好地连接，所以不需要对电极结构进行特殊的考虑。与此相对，在作为微型机械设备的配线材料，采用了掺杂有杂质的多晶硅膜时，通常采用图4所示的电极结构(参照专利文献1)。
如图4所示，在多晶硅衬底1上形成有绝缘膜2，并且在绝缘膜2上形成有由掺杂了杂质的多晶硅膜构成的配线3。以覆盖配线3的方式形成有绝缘膜4。在绝缘膜4上设置有使配线3局部地露出的开口部，并且在该开口部以与配线3连接的方式形成有由Au构成的焊盘5。在焊盘5上连接有由Au或Al构成的缆线6。
专利文献1：特开昭63-318756号公报
但是，作为微型机械设备的配线材料，在使用了掺杂有杂质的多晶硅膜时，在如上所述的配线方法中，产生以下的问题。
即，在图4所示的电极结构中，作为焊盘5，需要进行用于形成Au膜或以Au膜为最上层的金属复合膜的处理。因此，处理工序增加，制造成本上升。此外，在图4所示的电极结构中，夹着绝缘膜4而对置的配线3(多晶硅膜)和焊盘5(Au膜或金属复合膜)形成电容器，其结果是，产生寄生电容。该寄生电容使设备的特性劣化。即，该寄生电容阻碍微型机械设备的功能。
发明内容
鉴于以上的事实，本发明的目的在于提供一种能够在不增加处理工序的情况下降低寄生电容的微型机械设备的电极结构。
为达到所述目的，本发明的第一微型机械设备具备由掺杂了杂质的多晶硅构成的焊接区(bonding pad)。
根据本发明的第一微型机械设备，由于作为焊接区的材料采用由掺杂了杂质的多晶硅构成的配线材料，因此与采用与配线材料不同的金属材料重新设置焊接区的情况相比，能够省略工序，因此能够降低制造成本。此外，由于通过作为焊接区材料不采用金属，能够避免焊接区和配线或电极夹着绝缘膜而对置的结构，所以能够大幅度抑制寄生电容。
本发明的第二微型机械设备，其具有由第一电极和第二电极构成的电容器，其中，具备设在所述第一电极上的焊接区、和形成在所述第一电极上且在所述焊接区上具有开口部的保护绝缘膜，所述第一电极及所述焊接区都由掺杂了杂质的多晶硅构成。
根据本发明的第二微型机械设备，由于作为焊接区的材料采用由掺杂了杂质的多晶硅构成的配线材料，因此与采用与配线材料不同的金属材料重新设置焊接区的情况相比，能够省略工序，因此能够降低制造成本。此外，由于通过作为焊接区材料不采用金属，能够避免焊接区和配线或电极夹着绝缘膜而对置的结构，所以能够大幅度抑制寄生电容。
在本发明的第一或第二微型机械设备中，优选，在所述焊接区上通过共晶反应直接连接有由铝构成的缆线。
于是，由于能够更牢固地连接由铝构成的缆线、和焊接区即掺杂了杂质的多晶硅，所以能够提高设备的可靠性。
根据本发明，能够抑制处理工序的增加即制造成本的上升。此外，由于通过在由掺杂了杂质的多晶硅构成的配线的一部分即焊接区上直接连接缆线，能够抑制焊接区周边的寄生电容，因此能够提高设备的可靠性。
附图说明
图1是本发明的一实施方式的微型机械设备的剖视图。
图2是说明本发明的一实施方式的微型机械设备的焊接条件即焊接功率的定义的图。
图3是本发明的一实施方式的微型机械设备的焊盘部的放大照片。
图4是表示以往的微型机械设备的焊盘部的剖视图。
图中：101-硅衬底，102-下部电极，103-层间绝缘膜，104-上部电极，105-空间，106-保护膜，107a-焊盘，107b-焊盘，108a-缆线，108b-缆线。
具体实施方式
以下，参照附图说明本发明的一实施方式的微型机械设备。
图1是表示本发明的一实施方式的微型机械设备的概念的剖视图，表示微型机械设备的基本的结构。如图1所示，在硅衬底101上形成有下部电极102。另外，下部电极102的背面通过除去硅衬底101的一部分而局部地露出。在包括下部电极102上面的硅衬底101上，夹着层间绝缘膜103而形成有上部电极104。层间绝缘膜103的至少与硅衬底101的除去区域重叠的部分被除去，由此在下部电极103和上部电极104之间形成有空间105。此处，下部电极102和上部电极104由掺杂了杂质的多晶硅构成。另外，在上部电极104上形成有保护膜106。在保护膜106上设置有使成为焊盘107a的上部电极104的端部露出的开口部。此外，在保护膜106及层间绝缘膜103上设置有使成为焊盘107b的下部电极102的端部露出的开口部。在这些焊盘107a及焊盘107b上采用楔焊所形成的共晶反应而分别连接有由铝构成的缆线108a及108b。
本实施方式的微型机械设备的基本结构是具有图1所示的2片平行平板的电极即下部电极102及上部电极104的结构。即，通过在上部电极104和下部电极102之间存在空间(空气隙)105的结构，本实施方式的微型机械设备作为检测设备周边的压力变化的压力传感器而发挥功能。
例如，如果对下部电极102施加空气压等压力，则下部电极102因该压力而挠曲，从而下部电极102和上部电极104之间的距离(即空间105的厚度)变化。另一方面，由于下部电极102和上部电极104构成以空气为电介质(即以空间105为电介质层)的平行平板型电容器，所以如果下部电极102和上部电极104之间的距离变化，则该电容器的电容变化。通过检测该电容变化并将其输出，能够作为输出值取出压力变化。
下部电极102和上部电极104由电导通的材料构成，在微型机械设备中，多使用扩散有杂质的多晶硅膜。其理由是因为，能够根据成膜条件或退火条件等调节多晶硅膜的膜应力。此处，例如在图1所示的设备结构中，重要的是承受压力的下部电极102的多晶硅膜的应力。具体是，成为下部电极102的多晶硅膜的张力，与该多晶硅膜的应力和该多晶硅膜的膜厚的积成比例。此外，由于该多晶硅膜的张力左右检测压力变化的灵敏度，因此结果是，通过调节该多晶硅膜的应力，能够确定压力传感器的灵敏度。例如能够减小多晶硅膜的张力，构成检测微小的压力的传感器，或者相反，也能够增大多晶硅膜的张力，构成检测大的压力的传感器。
接着，说明用于在图1所示的焊盘107a及焊盘107b上分别连接缆线108a及108b的方法。
本实施方式采用的楔焊机的焊接条件的主要的参数是超声波的振荡频率、焊接载荷、焊接时间及焊接功率。以下，说明本发明者们实施在掺杂了杂质的多晶硅膜上连接铝缆线的实验的结果。
实验所使用的装置是ウエストボンド社制的型号7400D的楔焊机。此外，使用楔是作为45°式楔的DEWELY社制的CKNOE-1/16-750-52-F2525-MP。此外，所使用的铝缆线是由Al-Si合金(硅含有率为1at％)构成的直径(Φ)30μm径的缆线。此外，振荡频率为64kHz，焊接载荷为1～60gf(9.8×1～9.8×60mN)，焊接功率为1～13V，焊接时间为1～100msec。即，关于焊接载荷、焊接时间及焊接功率，改变设定值而进行实验。此外，接合温度为常温。
此处，关于焊接功率的定义，参照图2说明。图2所示的波形是64kHz的超声波振荡频率的波形，将该波形的峰值至峰值(Peak to Peak)的电压值(V)称为本实验的焊接功率。
此外，关于焊接载荷，不管能进行缆线的接合还是不能进行缆线的接合，如果超过60gf，则有时引起设备损伤。因此，在本实验中，将焊接载荷设定在60gf以下。此外，关于焊接时间，考虑到生产率而设定为0.1秒(100msec)以下的条件。关于焊接功率，将直至超声波振荡器所具有的最大输出13V的范围设定为实验条件。
根据本实验，在将焊接载荷设定在25～60gf、将焊接功率设定在3.9～13V、将焊接时间设定在42～100msec时，能够在掺杂了杂质的多晶硅膜上连接铝缆线。
另外，关于能否进行本实验的多晶硅膜和铝缆线的接合，在拉伸试验的接合强度在5gf(9.8×5mN)以上时，判断为“能够接合”。
图3所示的照片是表示在焊接载荷30gf、焊接时间47msec、焊接功率2V的条件下，接合了掺杂有杂质的多晶硅膜和铝缆线的状态的放大照片。此处，图3所示的接合是利用掺杂了杂质的多晶硅膜和铝缆线的共晶反应的接合，拉伸试验的接合强度为15gf(9.8×15mN)。
此外，从本实验可知，作为实用的焊接条件，优选将焊接载荷设定在28～32gf(9.8×28～9.8×32mN)、将焊接时间设定在45～50msec、将焊接功率设定在4.2～5.0V。
如以上说明所述，根据本实施方式，在由掺杂了杂质的多晶硅构成的焊盘107a及107b上能够分别连接由铝构成的缆线108a及108b。此外，由于作为焊盘107a及107b即焊接区的材料采用由掺杂了杂质的多晶硅构成的配线材料，因而与采用与配线材料不同的金属材料重新设置焊接区的情况相比，能够省略工序，因此能够降低制造成本。进而，由于通过作为焊接区材料不采用金属，能够避免焊接区和配线或电极夹着绝缘膜而对置的结构，所以能够大幅度抑制寄生电容。
即，能够制造制造成本廉价且不在焊盘部产生寄生电容的微型机械设备。
(工业上的可利用性)
本发明涉及微型机械设备，通过在由掺杂了杂质的多晶硅构成的配线或电极上直接连接缆线，可得到能够抑制焊接区周边的寄生电容从而实现高可靠性的效果，因此本发明是非常有用的。
权利要求书(按照条约第19条的修改)
1.一种微型机械设备，其特征在于，具备：
第一导电膜，其具有第一电极部和第一焊盘部；
第二导电膜，其具有第二电极部和第二焊盘部，
所述第一电极部和所述第二电极部隔着空气隙相互对置，
所述第一导电膜及所述第二导电膜分别由掺杂了杂质的多晶硅构成。
2.如权利要求1所述的微型机械设备，其特征在于，
在所述第一焊盘部及所述第二焊盘部分别通过共晶反应直接连接有由铝构成的缆线。
3.在所述第一导电膜的与所述第二导电膜相反侧的表面，除去所述第一焊盘部而形成有保护膜，
所述第二导电膜根据空气压的变化而挠曲。

Claims (3)

1.一种微型机械设备，其特征在于，具备由掺杂了杂质的多晶硅构成的焊接区。
2.一种微型机械设备，其具有由第一电极和第二电极构成的电容器，其特征在于，具备：
焊接区，其设在所述第一电极上；
保护绝缘膜，其形成在所述第一电极上且在所述焊接区上具有开口部，
所述第一电极及所述焊接区都由掺杂了杂质的多晶硅构成。
3.如权利要求1或2所述的微型机械设备，其特征在于，
在所述焊接区上通过共晶反应直接连接有由铝构成的缆线。
CNA2005800273116A 2004-08-31 2005-08-15 微型机械设备 Pending CN101002314A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104969049A (zh) * 2012-10-02 2015-10-07 罗伯特·博世有限公司 电容式压力传感器和方法
CN111933602A (zh) * 2019-08-28 2020-11-13 格物感知（深圳）科技有限公司 去膜的铝硅键合工艺

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7560789B2 (en) * 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7642612B2 (en) 2005-06-17 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007053130A (ja) 2005-08-15 2007-03-01 Matsushita Electric Ind Co Ltd 接合構造および接合方法
JP4749177B2 (ja) * 2006-02-15 2011-08-17 パナソニック株式会社 接続構造体および接続構造体の製造方法
JP2009105291A (ja) * 2007-10-25 2009-05-14 Panasonic Corp 接合構造体およびその製造方法
JP2011216820A (ja) * 2010-04-02 2011-10-27 Toshiba Corp Ｍｅｍｓ素子
US8685828B2 (en) 2011-01-14 2014-04-01 Infineon Technologies Ag Method of forming a capacitor
US8318575B2 (en) * 2011-02-07 2012-11-27 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof
JP6582273B2 (ja) * 2015-08-27 2019-10-02 新日本無線株式会社 Ｍｅｍｓ素子の製造方法
KR101827464B1 (ko) * 2015-10-06 2018-02-08 동우 화인켐 주식회사 전극 접속부 및 이를 포함하는 터치 스크린 패널

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5460859A (en) * 1977-10-25 1979-05-16 Toshiba Corp Bonding method
JPS6340333A (ja) * 1986-08-05 1988-02-20 Mitsubishi Electric Corp 半導体装置
IT1214254B (it) * 1987-09-23 1990-01-10 Sgs Microelettonica S P A Dispositivo a semiconduttore in contenitore plastico o ceramico con "chips" fissati su entrambi i lati dell'isola centrale del "frame".
JP2708191B2 (ja) * 1988-09-20 1998-02-04 株式会社日立製作所 半導体装置
JPH02165646A (ja) * 1988-12-20 1990-06-26 Nec Corp 半導体装置
JP2853785B2 (ja) * 1992-01-30 1999-02-03 松下電子工業株式会社 固体撮像装置及びその製造方法
JP3147512B2 (ja) * 1992-07-28 2001-03-19 セイコーエプソン株式会社 電気光学装置
US5332469A (en) * 1992-11-12 1994-07-26 Ford Motor Company Capacitive surface micromachined differential pressure sensor
JP4439090B2 (ja) * 2000-07-26 2010-03-24 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
KR100767540B1 (ko) * 2001-04-13 2007-10-17 후지 덴키 홀딩스 가부시끼가이샤 반도체 장치
JP2003012853A (ja) * 2001-07-03 2003-01-15 Bridgestone Corp 蓄熱性フォーム
US6900071B2 (en) * 2001-07-26 2005-05-31 Mitsubishi Denki Kabushiki Kaisha Substrate and method for producing the same, and thin film structure
JP3492673B1 (ja) * 2002-06-21 2004-02-03 沖電気工業株式会社 静電容量型加速度センサの製造方法
JP4170103B2 (ja) * 2003-01-30 2008-10-22 Ｎｅｃエレクトロニクス株式会社 半導体装置、および半導体装置の製造方法
US6949807B2 (en) * 2003-12-24 2005-09-27 Honeywell International, Inc. Signal routing in a hermetically sealed MEMS device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104969049A (zh) * 2012-10-02 2015-10-07 罗伯特·博世有限公司 电容式压力传感器和方法
CN104969049B (zh) * 2012-10-02 2018-04-27 罗伯特·博世有限公司 电容式压力传感器和方法
CN111933602A (zh) * 2019-08-28 2020-11-13 格物感知（深圳）科技有限公司 去膜的铝硅键合工艺

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