CN100585867C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN100585867C CN100585867C CN200510108891A CN200510108891A CN100585867C CN 100585867 C CN100585867 C CN 100585867C CN 200510108891 A CN200510108891 A CN 200510108891A CN 200510108891 A CN200510108891 A CN 200510108891A CN 100585867 C CN100585867 C CN 100585867C
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004291554 | 2004-10-04 | ||
| JP2004291554A JP4817636B2 (ja) | 2004-10-04 | 2004-10-04 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1783506A CN1783506A (zh) | 2006-06-07 |
| CN100585867C true CN100585867C (zh) | 2010-01-27 |
Family
ID=36377689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200510108891A Expired - Fee Related CN100585867C (zh) | 2004-10-04 | 2005-09-28 | 半导体装置及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7888714B2 (https=) |
| JP (1) | JP4817636B2 (https=) |
| CN (1) | CN100585867C (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1724844A2 (en) * | 2005-05-20 | 2006-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device, manufacturing method thereof and semiconductor device |
| EP1857907B1 (en) | 2006-04-28 | 2009-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101447044B1 (ko) * | 2006-10-31 | 2014-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| JP5250236B2 (ja) * | 2006-10-31 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US8207589B2 (en) * | 2007-02-15 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device |
| WO2008123119A1 (en) * | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device provided with the photoelectric conversion device |
| KR101401528B1 (ko) * | 2007-06-29 | 2014-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전변환장치 및 그 광전변환장치를 구비하는 전자기기 |
| WO2009014155A1 (en) | 2007-07-25 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
| JP5317712B2 (ja) | 2008-01-22 | 2013-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP5136112B2 (ja) * | 2008-02-19 | 2013-02-06 | セイコーエプソン株式会社 | 光電変換装置及び電気光学装置 |
| JP5388632B2 (ja) * | 2008-03-14 | 2014-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9095066B2 (en) * | 2008-06-18 | 2015-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Printed board |
| US8207487B2 (en) * | 2008-06-25 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device including charge/discharge circuit |
| WO2010035608A1 (en) | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| DE102010038933A1 (de) * | 2009-08-18 | 2011-02-24 | Denso Corporation, Kariya-City | Halbleitervorrichtung mit Halbleiterchip und Metallplatte und Verfahren zu deren Fertigung |
| EP2365417A3 (en) * | 2010-03-08 | 2015-04-29 | Semiconductor Energy Laboratory Co, Ltd. | Electronic device and electronic system |
| US8946877B2 (en) * | 2010-09-29 | 2015-02-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor package including cap |
| US8580672B2 (en) | 2011-10-25 | 2013-11-12 | Globalfoundries Inc. | Methods of forming bump structures that include a protection layer |
| FR3006438B1 (fr) * | 2013-06-04 | 2015-06-26 | Commissariat Energie Atomique | Capteur de temperature |
| US9806217B2 (en) * | 2014-04-30 | 2017-10-31 | William Marsh Rice University | Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain |
| CN105336751B (zh) * | 2014-06-23 | 2018-06-22 | 上海箩箕技术有限公司 | 光电传感器及其制造方法 |
| WO2026009704A1 (ja) * | 2024-07-04 | 2026-01-08 | 株式会社ジャパンディスプレイ | 検出装置及び検出装置の製造方法 |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4085411A (en) | 1976-04-16 | 1978-04-18 | Sprague Electric Company | Light detector system with photo diode and current-mirror amplifier |
| US4454416A (en) | 1982-01-13 | 1984-06-12 | Sprague Electric Company | Photo-electric circuit employing current mirrors |
| US4485301A (en) | 1982-02-01 | 1984-11-27 | Sprague Electric Company | Linear two-terminal integrated circuit photo sensor |
| EP0251563A3 (en) | 1986-06-17 | 1991-01-09 | Tokyo Electric Co. Ltd. | Photoelectric conversion device |
| JPH01289381A (ja) * | 1988-05-17 | 1989-11-21 | Seiko Epson Corp | 増幅型固体撮像装置 |
| CA2034118A1 (en) * | 1990-02-09 | 1991-08-10 | Nang Tri Tran | Solid state radiation detector |
| JP3059514B2 (ja) * | 1991-03-18 | 2000-07-04 | 株式会社半導体エネルギー研究所 | 光電変換装置ならびにイメージセンサおよびそれらの作製方法 |
| JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
| JPH0629510A (ja) * | 1991-10-16 | 1994-02-04 | Fuji Xerox Co Ltd | Ｔｆｔ駆動イメージセンサおよびその製造方法 |
| AU5306494A (en) | 1993-01-08 | 1994-07-14 | Richard A Vasichek | Magnetic keeper accessory for wrench sockets |
| JP3329512B2 (ja) | 1993-03-22 | 2002-09-30 | 株式会社半導体エネルギー研究所 | 半導体回路およびその作製方法 |
| US5501989A (en) * | 1993-03-22 | 1996-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer |
| US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US6639262B2 (en) * | 1993-12-10 | 2003-10-28 | Symetrix Corporation | Metal oxide integrated circuit on silicon germanium substrate |
| JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5757456A (en) * | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
| US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
| JP3516424B2 (ja) | 1996-03-10 | 2004-04-05 | 株式会社半導体エネルギー研究所 | 薄膜半導体装置 |
| US5841180A (en) | 1996-03-27 | 1998-11-24 | Canon Kabushiki Kaisha | Photoelectric conversion device, method of driving photoelectric conversion device, and system having the device |
| JP3329680B2 (ja) | 1996-05-16 | 2002-09-30 | 株式会社デンソー | 光センサ |
| JP3444093B2 (ja) | 1996-06-10 | 2003-09-08 | 株式会社デンソー | 光センサ回路 |
| JP3719786B2 (ja) * | 1996-09-11 | 2005-11-24 | 株式会社東芝 | 光検出器の製造方法 |
| JP4027465B2 (ja) | 1997-07-01 | 2007-12-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその製造方法 |
| JP4127416B2 (ja) | 1997-07-16 | 2008-07-30 | 株式会社半導体エネルギー研究所 | 光センサ、光センサの作製方法、リニアイメージセンサ及びエリアセンサ |
| JP3838393B2 (ja) | 1997-09-02 | 2006-10-25 | 株式会社半導体エネルギー研究所 | イメージセンサを内蔵した表示装置 |
| JP4271268B2 (ja) | 1997-09-20 | 2009-06-03 | 株式会社半導体エネルギー研究所 | イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置 |
| JP4044187B2 (ja) | 1997-10-20 | 2008-02-06 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその作製方法 |
| US6287888B1 (en) | 1997-12-26 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
| TW396707B (en) | 1998-02-20 | 2000-07-01 | Canon Kk | Semiconductor device |
| US6734907B1 (en) | 1998-04-30 | 2004-05-11 | Minolta Co., Ltd. | Solid-state image pickup device with integration and amplification |
| JPH11326954A (ja) | 1998-05-15 | 1999-11-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US6867752B1 (en) | 1998-08-31 | 2005-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Portable information processing system |
| JP3581031B2 (ja) | 1998-11-27 | 2004-10-27 | オリンパス株式会社 | 光検出装置 |
| US6858898B1 (en) | 1999-03-23 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TW480727B (en) | 2000-01-11 | 2002-03-21 | Semiconductor Energy Laboratro | Semiconductor display device |
| US6747638B2 (en) | 2000-01-31 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
| JP2001298663A (ja) | 2000-04-12 | 2001-10-26 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその駆動方法 |
| JP4197217B2 (ja) | 2000-05-08 | 2008-12-17 | 株式会社半導体エネルギー研究所 | 装置 |
| JP4703815B2 (ja) | 2000-05-26 | 2011-06-15 | 株式会社半導体エネルギー研究所 | Ｍｏｓ型センサの駆動方法、及び撮像方法 |
| US6995753B2 (en) | 2000-06-06 | 2006-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of manufacturing the same |
| JP5110748B2 (ja) | 2000-06-06 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2002016839A (ja) | 2000-06-30 | 2002-01-18 | Minolta Co Ltd | 固体撮像装置 |
| JP2002176162A (ja) | 2000-08-10 | 2002-06-21 | Semiconductor Energy Lab Co Ltd | エリアセンサ及びエリアセンサを備えた表示装置 |
| US7030551B2 (en) * | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
| US6724012B2 (en) | 2000-12-14 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display matrix with pixels having sensor and light emitting portions |
| JP2002303676A (ja) | 2001-04-03 | 2002-10-18 | Matsushita Electric Ind Co Ltd | 放射線検出素子および放射線検出素子の製造方法 |
| JP4896302B2 (ja) | 2001-04-09 | 2012-03-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4703883B2 (ja) | 2001-04-09 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2002340989A (ja) | 2001-05-15 | 2002-11-27 | Semiconductor Energy Lab Co Ltd | 測定方法、検査方法及び検査装置 |
| JP2003047017A (ja) | 2001-07-10 | 2003-02-14 | Lg Electronics Inc | ３管式プロジェクションテレビの自動コンバーゼンス補正回路 |
| JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| US6814832B2 (en) | 2001-07-24 | 2004-11-09 | Seiko Epson Corporation | Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance |
| JP2003060744A (ja) | 2001-08-21 | 2003-02-28 | Sanyo Electric Co Ltd | 携帯機器 |
| US6956234B2 (en) | 2001-11-30 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Passive matrix display device |
| JP2003249671A (ja) | 2001-12-20 | 2003-09-05 | Canon Inc | 被覆樹脂層を有する基板の製造方法および製造装置 |
| TW575849B (en) | 2002-01-18 | 2004-02-11 | Chi Mei Optoelectronics Corp | Thin film transistor liquid crystal display capable of adjusting its light source |
| US6930326B2 (en) | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
| DE60325669D1 (de) | 2002-05-17 | 2009-02-26 | Semiconductor Energy Lab | Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements |
| JP2004015000A (ja) * | 2002-06-11 | 2004-01-15 | Canon Inc | 放射線検出装置及び放射線撮像システム |
| US7078702B2 (en) * | 2002-07-25 | 2006-07-18 | General Electric Company | Imager |
| JP2004140267A (ja) | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| KR101032337B1 (ko) | 2002-12-13 | 2011-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 그의 제조방법 |
| CN100392861C (zh) | 2003-01-08 | 2008-06-04 | 株式会社半导体能源研究所 | 半导体器件及其制作方法 |
| US6982406B2 (en) | 2003-04-03 | 2006-01-03 | Pao Jung Chen | Simple CMOS light-to-current sensor |
| US7253391B2 (en) * | 2003-09-19 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Optical sensor device and electronic apparatus |
| US7495272B2 (en) * | 2003-10-06 | 2009-02-24 | Semiconductor Energy Labortaory Co., Ltd. | Semiconductor device having photo sensor element and amplifier circuit |
-
2004
- 2004-10-04 JP JP2004291554A patent/JP4817636B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-15 US US11/226,472 patent/US7888714B2/en not_active Expired - Fee Related
- 2005-09-28 CN CN200510108891A patent/CN100585867C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1783506A (zh) | 2006-06-07 |
| JP4817636B2 (ja) | 2011-11-16 |
| US20070187790A1 (en) | 2007-08-16 |
| US7888714B2 (en) | 2011-02-15 |
| JP2006108307A (ja) | 2006-04-20 |
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