CN100580942C - 光电转换器件和具有光电转换器件的摄像系统 - Google Patents

光电转换器件和具有光电转换器件的摄像系统 Download PDF

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Publication number
CN100580942C
CN100580942C CN200710128400A CN200710128400A CN100580942C CN 100580942 C CN100580942 C CN 100580942C CN 200710128400 A CN200710128400 A CN 200710128400A CN 200710128400 A CN200710128400 A CN 200710128400A CN 100580942 C CN100580942 C CN 100580942C
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China
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semiconductor region
photoelectric conversion
region
type semiconductor
conversion device
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Expired - Fee Related
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CN200710128400A
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English (en)
Chinese (zh)
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CN101106149A (zh
Inventor
浦贤一郎
福元嘉彦
片冈有三
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN200710128400A 2006-07-10 2007-07-10 光电转换器件和具有光电转换器件的摄像系统 Expired - Fee Related CN100580942C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006189244A JP5116264B2 (ja) 2006-07-10 2006-07-10 光電変換装置、光電変換装置の製造方法および光電変換装置を用いた撮像システム
JP2006189244 2006-07-10

Related Child Applications (1)

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CN2009102526453A Division CN101714568B (zh) 2006-07-10 2007-07-10 制造光电转换器件的方法

Publications (2)

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CN101106149A CN101106149A (zh) 2008-01-16
CN100580942C true CN100580942C (zh) 2010-01-13

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CN2009102526453A Expired - Fee Related CN101714568B (zh) 2006-07-10 2007-07-10 制造光电转换器件的方法

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US (2) US7459760B2 (enExample)
EP (2) EP1879231A3 (enExample)
JP (1) JP5116264B2 (enExample)
CN (2) CN100580942C (enExample)

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JP5180537B2 (ja) * 2007-08-24 2013-04-10 キヤノン株式会社 光電変換装置及びマルチチップイメージセンサ
JP2010206174A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP2010206172A (ja) 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP2010206173A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP2010212319A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、電子機器および固体撮像装置の製造方法
JP5513055B2 (ja) * 2009-10-01 2014-06-04 キヤノン株式会社 固体撮像素子の製造方法
KR101605984B1 (ko) * 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5568969B2 (ja) * 2009-11-30 2014-08-13 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011114302A (ja) * 2009-11-30 2011-06-09 Sony Corp 半導体素子の製造方法及び半導体素子、並びに固体撮像素子及び固体撮像装置
JP5564909B2 (ja) * 2009-11-30 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US9040341B2 (en) * 2012-06-04 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Image device and methods of forming the same
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
CN110556390B (zh) * 2018-05-31 2024-09-27 松下知识产权经营株式会社 摄像装置

Citations (2)

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CN1527393A (zh) * 2003-03-07 2004-09-08 ���µ�����ҵ��ʽ���� 固态成像装置
CN1638140A (zh) * 2004-01-09 2005-07-13 松下电器产业株式会社 用于制造固态成像装置的方法

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JP2002190586A (ja) * 2000-12-22 2002-07-05 Mitsubishi Electric Corp 固体撮像装置およびその製造方法
JP4282049B2 (ja) * 2002-02-28 2009-06-17 キヤノン株式会社 半導体装置、光電変換装置及びカメラ
JP4117540B2 (ja) * 2002-10-17 2008-07-16 ソニー株式会社 固体撮像素子の制御方法
CN100405598C (zh) * 2002-11-12 2008-07-23 微米技术有限公司 用于减少cmos图像传感器中的暗电流的接地栅极和隔离技术
JP4297416B2 (ja) * 2003-06-10 2009-07-15 シャープ株式会社 固体撮像素子、その駆動方法およびカメラ
JP4514188B2 (ja) * 2003-11-10 2010-07-28 キヤノン株式会社 光電変換装置及び撮像装置
US7214575B2 (en) * 2004-01-06 2007-05-08 Micron Technology, Inc. Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
JP4230406B2 (ja) * 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
JP2006032681A (ja) * 2004-07-16 2006-02-02 Sony Corp 半導体装置および物理情報取得装置並びに半導体装置の駆動方法
CN100369259C (zh) * 2004-08-04 2008-02-13 原相科技股份有限公司 光感测区及外围电路区相互隔离的主动取像元件
JP4756839B2 (ja) * 2004-09-01 2011-08-24 キヤノン株式会社 固体撮像装置及びカメラ
JP4604621B2 (ja) * 2004-09-15 2011-01-05 ソニー株式会社 固体撮像装置の製造方法
KR100630704B1 (ko) * 2004-10-20 2006-10-02 삼성전자주식회사 비평면 구조의 트랜지스터를 구비한 ｃｍｏｓ 이미지 센서및 그 제조 방법

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CN1527393A (zh) * 2003-03-07 2004-09-08 ���µ�����ҵ��ʽ���� 固态成像装置
CN1638140A (zh) * 2004-01-09 2005-07-13 松下电器产业株式会社 用于制造固态成像装置的方法

Also Published As

Publication number Publication date
JP5116264B2 (ja) 2013-01-09
JP2008016771A (ja) 2008-01-24
EP1879231A3 (en) 2011-03-16
CN101714568B (zh) 2012-01-04
US20090053849A1 (en) 2009-02-26
US7749790B2 (en) 2010-07-06
CN101106149A (zh) 2008-01-16
EP2445009A3 (en) 2013-11-13
EP1879231A2 (en) 2008-01-16
EP2445009A2 (en) 2012-04-25
US7459760B2 (en) 2008-12-02
CN101714568A (zh) 2010-05-26
US20080006892A1 (en) 2008-01-10

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