CN100520975C - 非易失性半导体存储器件 - Google Patents

非易失性半导体存储器件 Download PDF

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Publication number
CN100520975C
CN100520975C CNB2005100081758A CN200510008175A CN100520975C CN 100520975 C CN100520975 C CN 100520975C CN B2005100081758 A CNB2005100081758 A CN B2005100081758A CN 200510008175 A CN200510008175 A CN 200510008175A CN 100520975 C CN100520975 C CN 100520975C
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China
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mentioned
bit line
main bit
selection
line
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Expired - Fee Related
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CNB2005100081758A
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English (en)
Chinese (zh)
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CN1658330A (zh
Inventor
小岛诚
圆山敬史
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication of CN1658330A publication Critical patent/CN1658330A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
CNB2005100081758A 2004-02-16 2005-02-16 非易失性半导体存储器件 Expired - Fee Related CN100520975C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP038291/2004 2004-02-16
JP2004038291A JP4494820B2 (ja) 2004-02-16 2004-02-16 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
CN1658330A CN1658330A (zh) 2005-08-24
CN100520975C true CN100520975C (zh) 2009-07-29

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CNB2005100081758A Expired - Fee Related CN100520975C (zh) 2004-02-16 2005-02-16 非易失性半导体存储器件

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US (1) US7123510B2 (enExample)
JP (1) JP4494820B2 (enExample)
CN (1) CN100520975C (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4484577B2 (ja) * 2004-05-07 2010-06-16 株式会社ルネサステクノロジ 半導体記憶装置及びその制御方法
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
JP2008047189A (ja) 2006-08-11 2008-02-28 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7869246B2 (en) * 2007-05-25 2011-01-11 Marvell World Trade Ltd. Bit line decoder architecture for NOR-type memory array
CN101131862B (zh) * 2007-09-29 2011-03-30 航天东方红卫星有限公司 一种空间非易失存储器
JP2009123274A (ja) * 2007-11-14 2009-06-04 Panasonic Corp 半導体記憶装置
JP5209289B2 (ja) 2007-12-13 2013-06-12 三星電子株式会社 半導体記憶装置
US7848160B2 (en) * 2007-12-13 2010-12-07 Samsung Electronics Co., Ltd. Semiconductor storage device and method for operating the same
JP2009245503A (ja) 2008-03-31 2009-10-22 Nec Electronics Corp 半導体記憶装置
JP2010061711A (ja) * 2008-09-01 2010-03-18 Panasonic Corp 半導体記憶装置
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
KR101217218B1 (ko) * 2011-03-15 2012-12-31 고려대학교 산학협력단 저전력 비디오 프로세서를 위한 임베디드 메모리 설계
JP5219170B2 (ja) * 2011-09-21 2013-06-26 株式会社フローディア 不揮発性半導体記憶装置
JP2012119058A (ja) * 2012-02-13 2012-06-21 Fujitsu Semiconductor Ltd 不揮発性半導体メモリ
KR102189824B1 (ko) * 2014-08-04 2020-12-11 삼성전자주식회사 메모리 장치의 단위 어레이, 이를 포함하는 메모리 장치 및 메모리 시스템
JP2024044809A (ja) * 2022-09-21 2024-04-02 株式会社東芝 半導体記憶装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
US5963465A (en) * 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6633496B2 (en) * 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Symmetric architecture for memory cells having widely spread metal bit lines
JP2000101050A (ja) * 1998-09-22 2000-04-07 Nec Corp 半導体記憶装置およびメモリセルのレイアウト方法
US6128226A (en) * 1999-02-04 2000-10-03 Saifun Semiconductors Ltd. Method and apparatus for operating with a close to ground signal
JP3694422B2 (ja) * 1999-06-21 2005-09-14 シャープ株式会社 ロウデコーダ回路
JP2001044394A (ja) * 1999-08-03 2001-02-16 Hitachi Ltd 半導体装置およびその副ビット線選択方法
US6262914B1 (en) * 1999-08-11 2001-07-17 Texas Instruments Incorporated Flash memory segmentation
US6272043B1 (en) * 2000-01-28 2001-08-07 Advanced Micro Devices, Inc. Apparatus and method of direct current sensing from source side in a virtual ground array
US6351415B1 (en) * 2001-03-28 2002-02-26 Tower Semiconductor Ltd. Symmetrical non-volatile memory array architecture without neighbor effect
US6584034B1 (en) * 2001-04-23 2003-06-24 Aplus Flash Technology Inc. Flash memory array structure suitable for multiple simultaneous operations
JP3573341B2 (ja) * 2001-05-09 2004-10-06 松下電器産業株式会社 半導体記憶装置
JP2003124362A (ja) * 2001-10-18 2003-04-25 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置およびその駆動方法

Also Published As

Publication number Publication date
US7123510B2 (en) 2006-10-17
CN1658330A (zh) 2005-08-24
JP4494820B2 (ja) 2010-06-30
JP2005228446A (ja) 2005-08-25
US20050180212A1 (en) 2005-08-18

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