CN100505170C - 接近头加热方法和设备 - Google Patents

接近头加热方法和设备 Download PDF

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Publication number
CN100505170C
CN100505170C CNB200510063774XA CN200510063774A CN100505170C CN 100505170 C CN100505170 C CN 100505170C CN B200510063774X A CNB200510063774X A CN B200510063774XA CN 200510063774 A CN200510063774 A CN 200510063774A CN 100505170 C CN100505170 C CN 100505170C
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CN
China
Prior art keywords
fluid
heating part
head
semiconductor wafer
proximity head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB200510063774XA
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English (en)
Chinese (zh)
Other versions
CN1722372A (zh
Inventor
卡特里娜·米哈力成科
约翰·德拉里奥斯
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Lam Research Corp
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Lam Research Corp
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Publication date
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Publication of CN1722372A publication Critical patent/CN1722372A/zh
Application granted granted Critical
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Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/02—Heating or cooling

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Sustainable Development (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Coating Apparatus (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNB200510063774XA 2004-03-31 2005-03-31 接近头加热方法和设备 Expired - Fee Related CN100505170C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/816,487 2004-03-31
US10/816,487 US8062471B2 (en) 2004-03-31 2004-03-31 Proximity head heating method and apparatus

Publications (2)

Publication Number Publication Date
CN1722372A CN1722372A (zh) 2006-01-18
CN100505170C true CN100505170C (zh) 2009-06-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200510063774XA Expired - Fee Related CN100505170C (zh) 2004-03-31 2005-03-31 接近头加热方法和设备

Country Status (10)

Country Link
US (2) US8062471B2 (https=)
EP (1) EP1583135B1 (https=)
JP (1) JP4621052B2 (https=)
KR (1) KR101209537B1 (https=)
CN (1) CN100505170C (https=)
AT (1) ATE384334T1 (https=)
DE (1) DE602005004321T2 (https=)
MY (1) MY138431A (https=)
SG (1) SG115790A1 (https=)
TW (1) TWI289322B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098586A (zh) * 2015-04-27 2016-11-09 台湾积体电路制造股份有限公司 用于对蚀刻层进行蚀刻的方法以及晶圆蚀刻装置

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7329321B2 (en) * 2002-09-30 2008-02-12 Lam Research Corporation Enhanced wafer cleaning method
US7632376B1 (en) * 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US9117860B2 (en) * 2006-08-30 2015-08-25 Lam Research Corporation Controlled ambient system for interface engineering
KR101453115B1 (ko) * 2006-09-29 2014-10-27 램 리써치 코포레이션 기판-프로세싱 메니스커스에 의해 남겨진 입구 마크 및 출구 마크의 감소
US7946303B2 (en) * 2006-09-29 2011-05-24 Lam Research Corporation Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus
CA2663325A1 (en) * 2006-10-16 2008-04-24 Materials And Technologies Corporation Wet processing using a fluid meniscus, apparatus and method
US8309470B2 (en) * 2006-12-18 2012-11-13 Lam Research Corporation In-situ reclaim of volatile components
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
DE102007026635B4 (de) * 2007-06-06 2010-07-29 Atotech Deutschland Gmbh Vorrichtung zum nasschemischen Behandeln von Ware, Verwendung eines Strömungsorgans, Verfahren zum Einbauen eines Strömungsorgans in die Vorrichtung sowie Verfahren zur Herstellung einer nasschemisch behandelten Ware
KR100908017B1 (ko) * 2007-11-13 2009-07-15 조선대학교산학협력단 연마패드 컨디셔닝 장치
JP5312477B2 (ja) * 2007-12-20 2013-10-09 ラム リサーチ コーポレーション ウエハに対して均一な流体流れを提供する近接ヘッドを構成する方法
US8317934B2 (en) * 2009-05-13 2012-11-27 Lam Research Corporation Multi-stage substrate cleaning method and apparatus
US20110139183A1 (en) * 2009-12-11 2011-06-16 Katrina Mikhaylichenko System and method of preventing pattern collapse using low surface tension fluid
EP2383771B1 (de) * 2010-04-29 2020-04-22 EV Group GmbH Vorrichtung und Verfahren zum Lösen einer Polymerschicht von einer Oberfläche eines Substrats
JP5031066B2 (ja) * 2010-05-26 2012-09-19 兵庫県 クラスタービーム発生装置、基板処理装置、クラスタービーム発生方法及び基板処理方法
FI124113B (fi) * 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
KR20120034948A (ko) * 2010-10-04 2012-04-13 삼성전자주식회사 기판 건조 장치 및 이를 이용한 기판 건조 방법
JP2012222254A (ja) * 2011-04-12 2012-11-12 Tokyo Electron Ltd 基板洗浄ノズル及び基板洗浄装置並びに基板洗浄方法
JP5894854B2 (ja) * 2012-05-11 2016-03-30 株式会社日立ハイテクノロジーズ 検査装置
US9870933B2 (en) * 2013-02-08 2018-01-16 Lam Research Ag Process and apparatus for treating surfaces of wafer-shaped articles
US20140352738A1 (en) * 2013-05-29 2014-12-04 Beijing Sevenstar Electronics Co. Ltd. Zero lag dispense apparatus
DE102013010934A1 (de) * 2013-06-29 2015-01-15 Feinmetall Gmbh Prüfvorrichtung zur elektrischen Prüfung eines elektrischen Prüflings
JP2015115492A (ja) * 2013-12-12 2015-06-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US9966282B2 (en) * 2014-09-30 2018-05-08 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
JP6558845B2 (ja) * 2014-10-10 2019-08-14 株式会社ホロン 被洗浄体の異物除去装置およびその異物除去方法
JP6467260B2 (ja) * 2015-03-24 2019-02-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6505495B2 (ja) * 2015-04-28 2019-04-24 株式会社ディスコ 加工装置
RU2599314C1 (ru) * 2015-04-29 2016-10-10 Андрей Николаевич Алексеев Способ поддержания температуры нагреваемых электролитов ванн, работающих "под током"
RU2632727C2 (ru) * 2016-02-26 2017-10-09 Андрей Николаевич Алексеев Способ поддержания уровня нагреваемого электролита ванны, работающей "под током"
JP6709010B2 (ja) * 2019-04-16 2020-06-10 株式会社ホロン 被洗浄体の異物除去装置およびその異物除去方法
CN113441449B (zh) * 2020-03-27 2022-12-09 先丰通讯股份有限公司 喷盘检测系统及其检测方法
CN111604307B (zh) * 2020-05-24 2022-07-05 国网黑龙江省电力有限公司齐齐哈尔供电公司 一种电力工程绝缘子清扫系统及清扫方法
RU2761305C1 (ru) * 2020-09-29 2021-12-07 Андрей Николаевич Алексеев Способ управления операциями промывки деталей в выполненной в одноуровневой компоновке гальванической линии
FI130143B (en) * 2020-10-12 2023-03-10 Beneq Oy Apparatus and method for atomic layer growing
TWI781582B (zh) * 2020-12-02 2022-10-21 美商美光科技公司 清潔和處理微電子裝置的方法及相關的工具及組件
JP7838977B2 (ja) * 2022-02-25 2026-04-01 株式会社ディスコ 洗浄用治具、及び洗浄方法

Family Cites Families (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953265A (en) 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
US4086870A (en) 1977-06-30 1978-05-02 International Business Machines Corporation Novel resist spinning head
US4367123A (en) 1980-07-09 1983-01-04 Olin Corporation Precision spot plating process and apparatus
JPS5852034B2 (ja) 1981-08-26 1983-11-19 株式会社ソニツクス 部分メツキ方法及びその装置
US4444492A (en) 1982-05-15 1984-04-24 General Signal Corporation Apparatus for projecting a series of images onto dies of a semiconductor wafer
US4838289A (en) 1982-08-03 1989-06-13 Texas Instruments Incorporated Apparatus and method for edge cleaning
JPS62150828A (ja) 1985-12-25 1987-07-04 Mitsubishi Electric Corp ウエハ乾燥装置
JPH0712035B2 (ja) 1989-04-20 1995-02-08 三菱電機株式会社 噴流式液処理装置
JPH02309638A (ja) 1989-05-24 1990-12-25 Fujitsu Ltd ウエハーエッチング装置
JPH0628223Y2 (ja) 1989-06-14 1994-08-03 大日本スクリーン製造株式会社 回転塗布装置
US5271774A (en) 1990-03-01 1993-12-21 U.S. Philips Corporation Method for removing in a centrifuge a liquid from a surface of a substrate
US5102494A (en) 1990-07-13 1992-04-07 Mobil Solar Energy Corporation Wet-tip die for EFG cyrstal growth apparatus
US5294257A (en) 1991-10-28 1994-03-15 International Business Machines Corporation Edge masking spin tool
US5343234A (en) 1991-11-15 1994-08-30 Kuehnle Manfred R Digital color proofing system and method for offset and gravure printing
JP2877216B2 (ja) 1992-10-02 1999-03-31 東京エレクトロン株式会社 洗浄装置
US5339842A (en) * 1992-12-18 1994-08-23 Specialty Coating Systems, Inc. Methods and apparatus for cleaning objects
US5472502A (en) 1993-08-30 1995-12-05 Semiconductor Systems, Inc. Apparatus and method for spin coating wafers and the like
US5807522A (en) 1994-06-17 1998-09-15 The Board Of Trustees Of The Leland Stanford Junior University Methods for fabricating microarrays of biological samples
CZ288371B6 (en) 1994-06-30 2001-06-13 Procter & Gamble Structure for transport of liquids and process for producing thereof
US5705223A (en) 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
JP3247270B2 (ja) 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
US5558111A (en) 1995-02-02 1996-09-24 International Business Machines Corporation Apparatus and method for carrier backing film reconditioning
US5601655A (en) 1995-02-14 1997-02-11 Bok; Hendrik F. Method of cleaning substrates
JP3327726B2 (ja) * 1995-04-03 2002-09-24 キヤノン株式会社 インクジェット記録装置
JPH08277486A (ja) 1995-04-04 1996-10-22 Dainippon Printing Co Ltd リードフレームのめっき装置
US5618594A (en) * 1995-04-13 1997-04-08 Cvd, Incorporated Composite thermocouple protection tubes
TW386235B (en) 1995-05-23 2000-04-01 Tokyo Electron Ltd Method for spin rinsing
US5660642A (en) 1995-05-26 1997-08-26 The Regents Of The University Of California Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor
EP0764837A1 (en) * 1995-09-25 1997-03-26 Isuzu Ceramics Research Institute Co., Ltd. Thermocouple structure
US5975098A (en) 1995-12-21 1999-11-02 Dainippon Screen Mfg. Co., Ltd. Apparatus for and method of cleaning substrate
DE19622015A1 (de) 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
US5985031A (en) 1996-06-21 1999-11-16 Micron Technology, Inc. Spin coating spindle and chuck assembly
US6090210A (en) * 1996-07-24 2000-07-18 Applied Materials, Inc. Multi-zone gas flow control in a process chamber
US5997653A (en) 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US5830334A (en) 1996-11-07 1998-11-03 Kobayashi; Hideyuki Nozzle for fast plating with plating solution jetting and suctioning functions
JPH10163138A (ja) 1996-11-29 1998-06-19 Fujitsu Ltd 半導体装置の製造方法および研磨装置
JPH1133506A (ja) 1997-07-24 1999-02-09 Tadahiro Omi 流体処理装置及び洗浄処理システム
JP2951903B2 (ja) 1997-01-09 1999-09-20 株式会社日立製作所 処理装置
JPH10232498A (ja) 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JP2983494B2 (ja) * 1997-05-20 1999-11-29 株式会社カイジョー 基板の乾燥方法
JPH1131672A (ja) 1997-07-10 1999-02-02 Hitachi Ltd 基板処理方法および基板処理装置
US6103636A (en) 1997-08-20 2000-08-15 Micron Technology, Inc. Method and apparatus for selective removal of material from wafer alignment marks
EP0905746A1 (en) 1997-09-24 1999-03-31 Interuniversitair Micro-Elektronica Centrum Vzw Method of removing a liquid from a surface of a rotating substrate
US6398975B1 (en) 1997-09-24 2002-06-04 Interuniversitair Microelektronica Centrum (Imec) Method and apparatus for localized liquid treatment of the surface of a substrate
WO1999016109A1 (en) 1997-09-24 1999-04-01 Interuniversitair Micro-Elektronica Centrum Vereniging Zonder Winstbejag Method and apparatus for removing a liquid from a surface
DE69832567T2 (de) 1997-09-24 2007-01-18 Interuniversitair Micro-Electronica Centrum Vzw Verfahren und Vorrichtung zum Entfernen von einer Flüssigkeit von der Oberfläche eines rotierenden Substrats
US6491764B2 (en) 1997-09-24 2002-12-10 Interuniversitair Microelektronics Centrum (Imec) Method and apparatus for removing a liquid from a surface of a rotating substrate
CA2320278C (en) 1998-02-12 2006-01-03 Acm Research, Inc. Plating apparatus and method
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US6108932A (en) 1998-05-05 2000-08-29 Steag Microtech Gmbh Method and apparatus for thermocapillary drying
JPH11350169A (ja) 1998-06-10 1999-12-21 Chemitoronics Co ウエットエッチング装置およびウエットエッチングの方法
US6132586A (en) 1998-06-11 2000-10-17 Integrated Process Equipment Corporation Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly
US6689323B2 (en) 1998-10-30 2004-02-10 Agilent Technologies Method and apparatus for liquid transfer
US6092937A (en) 1999-01-08 2000-07-25 Fastar, Ltd. Linear developer
US6169244B1 (en) * 1999-05-21 2001-01-02 Moore Epitaxial, Inc. Thermocouple sheath cover
JP3653198B2 (ja) 1999-07-16 2005-05-25 アルプス電気株式会社 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置
US20020121290A1 (en) 1999-08-25 2002-09-05 Applied Materials, Inc. Method and apparatus for cleaning/drying hydrophobic wafers
JP3635217B2 (ja) 1999-10-05 2005-04-06 東京エレクトロン株式会社 液処理装置及びその方法
WO2001027357A1 (en) 1999-10-12 2001-04-19 Semitool, Inc. Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station
US6341998B1 (en) 1999-11-04 2002-01-29 Vlsi Technology, Inc. Integrated circuit (IC) plating deposition system and method
US6214513B1 (en) 1999-11-24 2001-04-10 Xerox Corporation Slot coating under an electric field
US6433541B1 (en) 1999-12-23 2002-08-13 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements during the process for removing the film
JP2001220688A (ja) 2000-02-09 2001-08-14 Matsushita Electric Ind Co Ltd 薄膜形成装置及び薄膜形成方法
US20030091754A1 (en) 2000-02-11 2003-05-15 Thami Chihani Method for treating cellulosic fibres
US6474786B2 (en) 2000-02-24 2002-11-05 The Board Of Trustees Of The Leland Stanford Junior University Micromachined two-dimensional array droplet ejectors
US6495005B1 (en) 2000-05-01 2002-12-17 International Business Machines Corporation Electroplating apparatus
ATE405352T1 (de) 2000-05-16 2008-09-15 Univ Minnesota Partikelerzeugung für einen hohen massedurchsatz mit einer mehrfachdüsenanordnung
JP4567148B2 (ja) * 2000-06-23 2010-10-20 東京エレクトロン株式会社 薄膜形成装置
AU2001270205A1 (en) 2000-06-26 2002-01-08 Applied Materials, Inc. Method and apparatus for wafer cleaning
US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7000622B2 (en) 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
US6488040B1 (en) * 2000-06-30 2002-12-03 Lam Research Corporation Capillary proximity heads for single wafer cleaning and drying
US6530823B1 (en) 2000-08-10 2003-03-11 Nanoclean Technologies Inc Methods for cleaning surfaces substantially free of contaminants
JP2002075947A (ja) 2000-08-30 2002-03-15 Alps Electric Co Ltd ウェット処理装置
US6555017B1 (en) 2000-10-13 2003-04-29 The Regents Of The University Of Caliofornia Surface contouring by controlled application of processing fluid using Marangoni effect
TW563196B (en) 2000-10-30 2003-11-21 Dainippon Screen Mfg Substrate processing apparatus
US6531206B2 (en) 2001-02-07 2003-03-11 3M Innovative Properties Company Microstructured surface film assembly for liquid acquisition and transport
US6928751B2 (en) 2001-06-12 2005-08-16 Goldfinger Technologies, Llc Megasonic cleaner and dryer system
TW554069B (en) 2001-08-10 2003-09-21 Ebara Corp Plating device and method
JP4785306B2 (ja) * 2001-09-17 2011-10-05 キヤノン株式会社 インクジェット記録装置及び該装置におけるインクの温度制御方法
JP2003115474A (ja) 2001-10-03 2003-04-18 Ebara Corp 基板処理装置及び方法
JP4003441B2 (ja) 2001-11-08 2007-11-07 セイコーエプソン株式会社 表面処理装置および表面処理方法
US6799584B2 (en) 2001-11-09 2004-10-05 Applied Materials, Inc. Condensation-based enhancement of particle removal by suction
US6845778B2 (en) * 2002-03-29 2005-01-25 Lam Research Corporation In-situ local heating using megasonic transducer resonator
TWI274393B (en) 2002-04-08 2007-02-21 Acm Res Inc Electropolishing and/or electroplating apparatus and methods
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7252097B2 (en) 2002-09-30 2007-08-07 Lam Research Corporation System and method for integrating in-situ metrology within a wafer process
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
WO2004030051A2 (en) 2002-09-30 2004-04-08 Lam Research Corporation System for substrate processing with meniscus, vacuum, ipa vapor, drying manifold
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7240679B2 (en) 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7329321B2 (en) * 2002-09-30 2008-02-12 Lam Research Corporation Enhanced wafer cleaning method
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7069937B2 (en) 2002-09-30 2006-07-04 Lam Research Corporation Vertical proximity processor
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1489461A1 (en) 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US7231682B1 (en) * 2003-08-28 2007-06-19 Lam Research Corporation Method and apparatus for simultaneously cleaning the front side and back side of a wafer
US7353560B2 (en) 2003-12-18 2008-04-08 Lam Research Corporation Proximity brush unit apparatus and method
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US7003899B1 (en) 2004-09-30 2006-02-28 Lam Research Corporation System and method for modulating flow through multiple ports in a proximity head
US20080260963A1 (en) * 2007-04-17 2008-10-23 Hyungsuk Alexander Yoon Apparatus and method for pre and post treatment of atomic layer deposition
US8309470B2 (en) * 2006-12-18 2012-11-13 Lam Research Corporation In-situ reclaim of volatile components

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098586A (zh) * 2015-04-27 2016-11-09 台湾积体电路制造股份有限公司 用于对蚀刻层进行蚀刻的方法以及晶圆蚀刻装置
US10283384B2 (en) 2015-04-27 2019-05-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer and wafer etching apparatus
US11784065B2 (en) 2015-04-27 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer
US12362203B2 (en) 2015-04-27 2025-07-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for etching etch layer

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TW200601399A (en) 2006-01-01
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JP4621052B2 (ja) 2011-01-26
US20050221621A1 (en) 2005-10-06
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SG115790A1 (en) 2005-10-28
ATE384334T1 (de) 2008-02-15
KR20060045033A (ko) 2006-05-16
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US8062471B2 (en) 2011-11-22
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CN1722372A (zh) 2006-01-18
US8102014B2 (en) 2012-01-24

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