CN100499051C - 结型半导体装置的制造方法 - Google Patents

结型半导体装置的制造方法 Download PDF

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Publication number
CN100499051C
CN100499051C CNB2006100653821A CN200610065382A CN100499051C CN 100499051 C CN100499051 C CN 100499051C CN B2006100653821 A CNB2006100653821 A CN B2006100653821A CN 200610065382 A CN200610065382 A CN 200610065382A CN 100499051 C CN100499051 C CN 100499051C
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China
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region
grid
source
semiconductor device
formation
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Expired - Fee Related
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CNB2006100653821A
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English (en)
Chinese (zh)
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CN1838390A (zh
Inventor
野中贤一
桥本英喜
横山诚一
岩永健介
齐藤吉三
岩黑弘明
清水正章
福田祐介
西川恒一
前山雄介
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Honda Motor Co Ltd
Shindengen Electric Manufacturing Co Ltd
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Honda Motor Co Ltd
Shindengen Electric Manufacturing Co Ltd
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Publication of CN1838390A publication Critical patent/CN1838390A/zh
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Publication of CN100499051C publication Critical patent/CN100499051C/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB2006100653821A 2005-03-23 2006-03-23 结型半导体装置的制造方法 Expired - Fee Related CN100499051C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005084671 2005-03-23
JP2005084671A JP4996828B2 (ja) 2005-03-23 2005-03-23 接合型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1838390A CN1838390A (zh) 2006-09-27
CN100499051C true CN100499051C (zh) 2009-06-10

Family

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Family Applications (1)

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CNB2006100653821A Expired - Fee Related CN100499051C (zh) 2005-03-23 2006-03-23 结型半导体装置的制造方法

Country Status (6)

Country Link
US (1) US7544552B2 (ko)
EP (1) EP1705712B1 (ko)
JP (1) JP4996828B2 (ko)
KR (1) KR20060103140A (ko)
CN (1) CN100499051C (ko)
AT (1) ATE535020T1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5470254B2 (ja) * 2008-08-26 2014-04-16 本田技研工業株式会社 接合型半導体装置およびその製造方法
US20110169015A1 (en) * 2008-08-26 2011-07-14 Honda Motor Co., Ltd. Bipolar semiconductor device and method for manufacturing same
JP2011091179A (ja) * 2009-10-22 2011-05-06 Honda Motor Co Ltd バイポーラ型半導体装置およびその製造方法
JP5607947B2 (ja) 2010-02-17 2014-10-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8829574B2 (en) * 2011-12-22 2014-09-09 Avogy, Inc. Method and system for a GaN vertical JFET with self-aligned source and gate
US8723178B2 (en) * 2012-01-20 2014-05-13 Monolithic Power Systems, Inc. Integrated field effect transistors with high voltage drain sensing
US8716078B2 (en) * 2012-05-10 2014-05-06 Avogy, Inc. Method and system for a gallium nitride vertical JFET with self-aligned gate metallization
US8841708B2 (en) 2012-05-10 2014-09-23 Avogy, Inc. Method and system for a GAN vertical JFET with self-aligned source metallization
JP6073719B2 (ja) * 2013-03-21 2017-02-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP5681835B1 (ja) * 2013-10-08 2015-03-11 新電元工業株式会社 炭化珪素半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770474B2 (ja) * 1985-02-08 1995-07-31 株式会社東芝 化合物半導体装置の製造方法
JP2794369B2 (ja) 1992-12-11 1998-09-03 キヤノン株式会社 液晶素子
US5554561A (en) * 1993-04-30 1996-09-10 Texas Instruments Incorporated Epitaxial overgrowth method
JP3789949B2 (ja) * 1994-03-07 2006-06-28 本田技研工業株式会社 半導体装置
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
EP1199099A1 (en) * 2000-10-19 2002-04-24 Amersham Biosciences AB Reactor
JP3692063B2 (ja) * 2001-03-28 2005-09-07 株式会社東芝 半導体装置及びその製造方法
JP4153811B2 (ja) * 2002-03-25 2008-09-24 株式会社東芝 高耐圧半導体装置及びその製造方法
JP2004134547A (ja) 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP4777676B2 (ja) * 2005-03-23 2011-09-21 本田技研工業株式会社 接合型半導体装置および接合型半導体装置の製造方法

Also Published As

Publication number Publication date
CN1838390A (zh) 2006-09-27
EP1705712A1 (en) 2006-09-27
US20060216879A1 (en) 2006-09-28
ATE535020T1 (de) 2011-12-15
JP2006269679A (ja) 2006-10-05
KR20060103140A (ko) 2006-09-28
US7544552B2 (en) 2009-06-09
EP1705712B1 (en) 2011-11-23
JP4996828B2 (ja) 2012-08-08

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