CN100474119C - 抗蚀剂图形形成方法和半导体器件的制造方法 - Google Patents

抗蚀剂图形形成方法和半导体器件的制造方法 Download PDF

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Publication number
CN100474119C
CN100474119C CNB2006100582084A CN200610058208A CN100474119C CN 100474119 C CN100474119 C CN 100474119C CN B2006100582084 A CNB2006100582084 A CN B2006100582084A CN 200610058208 A CN200610058208 A CN 200610058208A CN 100474119 C CN100474119 C CN 100474119C
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CN
China
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mentioned
exposure
resist film
film
resist
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Expired - Fee Related
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CNB2006100582084A
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English (en)
Chinese (zh)
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CN1825209A (zh
Inventor
河村大辅
柴田刚
伊藤信一
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Toshiba Corp
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Toshiba Corp
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Publication of CN1825209A publication Critical patent/CN1825209A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB2006100582084A 2005-02-24 2006-02-24 抗蚀剂图形形成方法和半导体器件的制造方法 Expired - Fee Related CN100474119C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP049394/2005 2005-02-24
JP2005049394A JP4634822B2 (ja) 2005-02-24 2005-02-24 レジストパターン形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1825209A CN1825209A (zh) 2006-08-30
CN100474119C true CN100474119C (zh) 2009-04-01

Family

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Family Applications (1)

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CNB2006100582084A Expired - Fee Related CN100474119C (zh) 2005-02-24 2006-02-24 抗蚀剂图形形成方法和半导体器件的制造方法

Country Status (4)

Country Link
US (1) US20060194155A1 (enrdf_load_stackoverflow)
JP (1) JP4634822B2 (enrdf_load_stackoverflow)
CN (1) CN100474119C (enrdf_load_stackoverflow)
TW (1) TW200727335A (enrdf_load_stackoverflow)

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* Cited by examiner, † Cited by third party
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JP2007142181A (ja) * 2005-11-18 2007-06-07 Toshiba Corp 基板処理方法及びリンス装置
JP2007194484A (ja) * 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
JP2007266074A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法及び液浸リソグラフィーシステム
JP4357514B2 (ja) * 2006-09-29 2009-11-04 株式会社東芝 液浸露光方法
JP4923936B2 (ja) * 2006-10-13 2012-04-25 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像方法
JP4813333B2 (ja) * 2006-11-21 2011-11-09 東京エレクトロン株式会社 膜形成方法、膜形成装置、パターン形成方法およびコンピュータ読取可能な記憶媒体
JP4331199B2 (ja) * 2006-11-29 2009-09-16 東京エレクトロン株式会社 液浸露光用塗布膜形成装置および塗布膜形成方法
JP2008153450A (ja) 2006-12-18 2008-07-03 Tokyo Electron Ltd 塗布膜処理方法および塗布膜処理装置
JP4922858B2 (ja) * 2007-07-30 2012-04-25 株式会社東芝 パターン形成方法及び洗浄装置
JP2009130031A (ja) * 2007-11-21 2009-06-11 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP5133730B2 (ja) * 2008-02-19 2013-01-30 セイコーインスツル株式会社 圧電振動片の製造方法
JP2009295716A (ja) 2008-06-04 2009-12-17 Toshiba Corp 半導体装置の製造方法及び基板処理装置
JP2011082369A (ja) * 2009-10-08 2011-04-21 Toshiba Corp 半導体装置の製造方法及び製造システム
CN102455593B (zh) * 2010-10-25 2013-10-09 京东方科技集团股份有限公司 光刻胶图案的形成方法和阵列基板的制造方法
JP6456238B2 (ja) * 2015-05-14 2019-01-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN109164677B (zh) * 2018-09-05 2021-12-07 京东方科技集团股份有限公司 光刻方法、柔性基板的制备方法以及光刻胶烘干装置
CN110391135B (zh) * 2019-08-08 2022-02-08 武汉新芯集成电路制造有限公司 去除光刻胶残留的方法及半导体器件的制造方法
CN113658854B (zh) * 2021-10-21 2022-01-28 绍兴中芯集成电路制造股份有限公司 光刻方法和半导体器件的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007047A (en) * 1974-06-06 1977-02-08 International Business Machines Corporation Modified processing of positive photoresists
JPH10335216A (ja) * 1997-05-30 1998-12-18 Dainippon Screen Mfg Co Ltd 基板処理方法
JP3337020B2 (ja) * 2000-02-04 2002-10-21 日本電気株式会社 半導体装置の製造方法
JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
JP3943828B2 (ja) * 2000-12-08 2007-07-11 東京エレクトロン株式会社 塗布、現像装置及びパターン形成方法
KR100964772B1 (ko) * 2002-03-29 2010-06-23 호야 가부시키가이샤 포토마스크 블랭크의 제조 방법 및 제조 장치와, 불필요한 막 제거 장치
JP3894104B2 (ja) * 2002-11-15 2007-03-14 東京エレクトロン株式会社 現像方法及び現像装置及び現像液再生装置
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4220423B2 (ja) * 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
JP4521219B2 (ja) * 2004-04-19 2010-08-11 株式会社東芝 描画パターンの生成方法、レジストパターンの形成方法、及び露光装置の制御方法
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4271109B2 (ja) * 2004-09-10 2009-06-03 東京エレクトロン株式会社 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置

Also Published As

Publication number Publication date
TW200727335A (en) 2007-07-16
JP2006235230A (ja) 2006-09-07
JP4634822B2 (ja) 2011-02-16
TWI296128B (enrdf_load_stackoverflow) 2008-04-21
US20060194155A1 (en) 2006-08-31
CN1825209A (zh) 2006-08-30

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