CN100472831C - 氮化物半导体发光元件 - Google Patents
氮化物半导体发光元件 Download PDFInfo
- Publication number
- CN100472831C CN100472831C CNB2007101074040A CN200710107404A CN100472831C CN 100472831 C CN100472831 C CN 100472831C CN B2007101074040 A CNB2007101074040 A CN B2007101074040A CN 200710107404 A CN200710107404 A CN 200710107404A CN 100472831 C CN100472831 C CN 100472831C
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- Prior art keywords
- layer
- nitride semiconductor
- barrier layer
- luminescent element
- ingan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims abstract description 60
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 53
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 230000012010 growth Effects 0.000 description 19
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- 230000008676 import Effects 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- -1 InGaN (InGaN) Chemical compound 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006133809 | 2006-05-12 | ||
JP2006133809A JP4872450B2 (ja) | 2006-05-12 | 2006-05-12 | 窒化物半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101071841A CN101071841A (zh) | 2007-11-14 |
CN100472831C true CN100472831C (zh) | 2009-03-25 |
Family
ID=38684272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101074040A Expired - Fee Related CN100472831C (zh) | 2006-05-12 | 2007-05-10 | 氮化物半导体发光元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7663138B2 (zh) |
JP (1) | JP4872450B2 (zh) |
CN (1) | CN100472831C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109075226A (zh) * | 2016-04-27 | 2018-12-21 | 斯坦雷电气株式会社 | Iii族氮化物层叠体及iii族氮化物发光元件 |
Families Citing this family (37)
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JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
KR101316492B1 (ko) | 2007-04-23 | 2013-10-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
US20090001416A1 (en) * | 2007-06-28 | 2009-01-01 | National University Of Singapore | Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) |
CN101217175B (zh) * | 2008-01-03 | 2011-05-18 | 南京大学 | 具有宽谱光发射功能的半导体发光器件的结构及制备方法 |
KR20090102031A (ko) * | 2008-03-25 | 2009-09-30 | 삼성전자주식회사 | 마이크로 히터 어레이, 이를 이용한 pn 접합 형성방법,및 마이크로 히터 어레이 및 pn 접합을 포함하는 pn접합 소자 |
US8054862B2 (en) * | 2008-08-14 | 2011-11-08 | University Of Seoul Industry Cooperation Foundation | Optoelectronic devices |
CN101728451B (zh) * | 2008-10-21 | 2013-10-30 | 展晶科技(深圳)有限公司 | 半导体光电元件 |
US8227791B2 (en) * | 2009-01-23 | 2012-07-24 | Invenlux Limited | Strain balanced light emitting devices |
US8106421B2 (en) * | 2009-08-21 | 2012-01-31 | University Of Seoul Industry Cooperation Foundation | Photovoltaic devices |
US8586963B2 (en) * | 2009-12-08 | 2013-11-19 | Lehigh University | Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same |
US10115859B2 (en) * | 2009-12-15 | 2018-10-30 | Lehigh University | Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer |
CN102136536A (zh) * | 2010-01-25 | 2011-07-27 | 亚威朗(美国) | 应变平衡发光器件 |
KR101754900B1 (ko) * | 2010-04-09 | 2017-07-06 | 엘지이노텍 주식회사 | 발광 소자 |
JP2012074665A (ja) | 2010-09-01 | 2012-04-12 | Hitachi Cable Ltd | 発光ダイオード |
US20120126201A1 (en) * | 2010-11-23 | 2012-05-24 | Heng Liu | Gallium nitride led devices with pitted layers and methods for making thereof |
JP2012114184A (ja) | 2010-11-24 | 2012-06-14 | Hitachi Cable Ltd | 発光ダイオード |
CN102637793B (zh) * | 2011-02-15 | 2015-08-12 | 展晶科技(深圳)有限公司 | 三族氮化合物半导体紫外光发光二极管 |
TWI514614B (zh) * | 2011-08-30 | 2015-12-21 | Lextar Electronics Corp | 固態發光半導體結構及其磊晶層成長方法 |
JP5296264B1 (ja) * | 2011-09-29 | 2013-09-25 | パナソニック株式会社 | 窒化物半導体発光素子およびledシステム |
DE102011115312B4 (de) * | 2011-09-29 | 2022-03-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterschichtenfolge, optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Halbleiterschichtenfolge |
CN103378265A (zh) * | 2012-04-28 | 2013-10-30 | 展晶科技(深圳)有限公司 | 发光模组载板的制造方法 |
CN103022290B (zh) * | 2012-12-19 | 2015-09-09 | 湘能华磊光电股份有限公司 | 具有四元InAlGaN的LED外延结构及其制备方法 |
US9818907B2 (en) * | 2013-01-23 | 2017-11-14 | Ushio Denki Kabushiki Kaisha | LED element |
CN104134729B (zh) * | 2013-05-03 | 2017-04-26 | 展晶科技(深圳)有限公司 | 发光芯片及其制造方法 |
JP2015038949A (ja) | 2013-07-17 | 2015-02-26 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
TWI597862B (zh) * | 2013-08-30 | 2017-09-01 | 晶元光電股份有限公司 | 具阻障層的光電半導體元件 |
TWI668885B (zh) * | 2016-08-25 | 2019-08-11 | 億光電子工業股份有限公司 | 氮化物半導體元件及其製造方法與所應用之封裝結構 |
KR102667614B1 (ko) * | 2017-09-22 | 2024-05-22 | 가부시끼가이샤 도꾸야마 | Ⅲ족 질화물 단결정 기판 |
CN108133982B (zh) * | 2017-12-20 | 2021-12-10 | 射阳拉曼半导体科技有限公司 | 基于SiC的多色LED芯片的制备方法 |
CN108133995A (zh) * | 2017-12-20 | 2018-06-08 | 西安智盛锐芯半导体科技有限公司 | 基于蓝光材料和红光材料的led光源制备方法及led芯片 |
CN108133989B (zh) * | 2017-12-20 | 2021-12-28 | 西安电子科技大学 | 基于多量子阱的GaN横向LED制备方法 |
CN108054250B (zh) * | 2017-12-20 | 2022-12-16 | 山东晶大光电科技有限公司 | 基于横向排布的四色led制备方法 |
CN108181763B (zh) * | 2017-12-29 | 2023-05-26 | 深圳市莹狐科技有限公司 | 背光模组及液晶显示装置 |
CN108051951B (zh) * | 2017-12-29 | 2022-12-13 | 西安智盛锐芯半导体科技有限公司 | Led光源、背光模组及液晶显示装置 |
CN109346583B (zh) * | 2018-08-31 | 2021-04-27 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
CN109545925B (zh) * | 2018-11-26 | 2020-04-10 | 华灿光电股份有限公司 | 一种GaN基发光二极管外延片及其制备方法 |
CN114497303B (zh) * | 2022-04-14 | 2022-06-24 | 江苏第三代半导体研究院有限公司 | 长波长led同质外延结构、其制备方法及应用 |
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-
2006
- 2006-05-12 JP JP2006133809A patent/JP4872450B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-13 US US11/717,052 patent/US7663138B2/en not_active Expired - Fee Related
- 2007-05-10 CN CNB2007101074040A patent/CN100472831C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109075226A (zh) * | 2016-04-27 | 2018-12-21 | 斯坦雷电气株式会社 | Iii族氮化物层叠体及iii族氮化物发光元件 |
Also Published As
Publication number | Publication date |
---|---|
JP4872450B2 (ja) | 2012-02-08 |
US20070262293A1 (en) | 2007-11-15 |
CN101071841A (zh) | 2007-11-14 |
US7663138B2 (en) | 2010-02-16 |
JP2007305851A (ja) | 2007-11-22 |
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