CN100471993C - 以大气压力等离子体处理衬底表面的装置 - Google Patents

以大气压力等离子体处理衬底表面的装置 Download PDF

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Publication number
CN100471993C
CN100471993C CNB2003801046854A CN200380104685A CN100471993C CN 100471993 C CN100471993 C CN 100471993C CN B2003801046854 A CNB2003801046854 A CN B2003801046854A CN 200380104685 A CN200380104685 A CN 200380104685A CN 100471993 C CN100471993 C CN 100471993C
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China
Prior art keywords
processing device
gas
electrode
surface processing
plasma
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Expired - Fee Related
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CNB2003801046854A
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English (en)
Chinese (zh)
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CN1720349A (zh
Inventor
李学柱
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SEM Technology Co Ltd
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SEM Technology Co Ltd
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Publication of CN1720349A publication Critical patent/CN1720349A/zh
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Publication of CN100471993C publication Critical patent/CN100471993C/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
CNB2003801046854A 2002-12-02 2003-11-19 以大气压力等离子体处理衬底表面的装置 Expired - Fee Related CN100471993C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0076071A KR100476136B1 (ko) 2002-12-02 2002-12-02 대기압 플라즈마를 이용한 표면처리장치
KR1020020076071 2002-12-02

Publications (2)

Publication Number Publication Date
CN1720349A CN1720349A (zh) 2006-01-11
CN100471993C true CN100471993C (zh) 2009-03-25

Family

ID=36165408

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003801046854A Expired - Fee Related CN100471993C (zh) 2002-12-02 2003-11-19 以大气压力等离子体处理衬底表面的装置

Country Status (6)

Country Link
JP (1) JP4409439B2 (ko)
KR (1) KR100476136B1 (ko)
CN (1) CN100471993C (ko)
AU (1) AU2003279587A1 (ko)
TW (1) TWI227951B (ko)
WO (1) WO2004051702A2 (ko)

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US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
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EP1907596A4 (en) * 2005-07-26 2009-09-16 Psm Inc PLASMA TREATMENT DEVICE AND METHOD OF INJECTION TYPE
JP2009505342A (ja) * 2005-08-11 2009-02-05 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ プラズマ発生装置及びプラズマ発生方法
JP4782529B2 (ja) * 2005-10-06 2011-09-28 エア・ウォーター株式会社 表示装置の製造方法
KR100708212B1 (ko) * 2005-10-07 2007-04-16 주식회사 피에스엠 대기압 플라즈마 샤워유닛 이를 이용한 와이어본딩 장치 및방법
KR100720527B1 (ko) * 2005-12-28 2007-05-22 동부일렉트로닉스 주식회사 시모스 이미지 센서 및 그 제조 방법
KR100760651B1 (ko) * 2006-01-24 2007-09-21 주식회사 셈테크놀러지 처리가스 공급관을 구비하는 기판 표면처리장치
KR101293119B1 (ko) * 2006-11-28 2013-08-05 엘아이지에이디피 주식회사 플라즈마 처리장치와 플라즈마 표면처리방법
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
KR101333878B1 (ko) * 2007-11-20 2013-11-27 엘지전자 주식회사 대기압 플라즈마를 이용한 표면처리장치
KR100975665B1 (ko) * 2008-01-25 2010-08-17 (주)에스이 플라즈마 양산용 상압 플라즈마 발생장치
CN102017057B (zh) 2008-05-02 2012-11-28 欧瑞康太阳能股份公司(特吕巴赫) 用于基板的等离子体辅助处理的等离子体处理装置和方法
KR101791685B1 (ko) * 2008-10-14 2017-11-20 노벨러스 시스템즈, 인코포레이티드 수소 이용 화학 반응으로 고용량 주입 스트립(ｈｄｉｓ) 방법 및 장치
US8454850B2 (en) 2009-09-02 2013-06-04 Air Products And Chemicals, Inc. Method for the removal of surface oxides by electron attachment
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
CN102652351B (zh) 2009-12-11 2016-10-05 诺发系统有限公司 在高剂量植入剥除前保护硅的增强式钝化工艺
US20130108804A1 (en) * 2010-07-21 2013-05-02 Francoise Massines Plasma treatment of substrates
MX2013010445A (es) * 2011-03-11 2014-06-23 Purdue Research Foundation Generacion de un microbicida dentro de un envase utilizando una composicion de gas controlada.
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US20130087287A1 (en) * 2011-10-10 2013-04-11 Korea Institute Of Machinery & Materials Plasma reactor for removal of contaminants
KR101513423B1 (ko) 2013-04-04 2015-04-21 주식회사 테스 플라즈마 발생장치 및 이를 포함하는 박막증착용 반응챔버
CN104779136A (zh) * 2014-01-10 2015-07-15 上海和辉光电有限公司 一种去除光致抗蚀剂的方法和设备
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
KR101657762B1 (ko) * 2014-06-23 2016-09-19 광운대학교 산학협력단 전기적 안전성 및 방열 기능을 구비한 플라즈마 제트 장치
CN104936371B (zh) * 2015-06-09 2017-07-07 北京三十四科技有限公司 一种空心电极介质阻挡结构
CN105047514B (zh) * 2015-07-27 2017-06-13 郑州大学 在玻璃表面等离子体刻蚀形成纹理结构的方法
KR102201183B1 (ko) * 2018-12-11 2021-01-13 한국과학기술원 수소 플라즈마를 활용한 이차원 물질의 전기적 특성 회복 방법 및 이의 장치
CN109526131A (zh) * 2018-12-26 2019-03-26 哈尔滨工业大学 一种气体流动环境下利用多地电极强化等离子体放电的方法
WO2021106100A1 (ja) * 2019-11-27 2021-06-03 東芝三菱電機産業システム株式会社 活性ガス生成装置
CN112139151A (zh) * 2020-09-11 2020-12-29 韩山师范学院 一种大型设备表面清理装置
WO2022114013A1 (ja) * 2020-11-30 2022-06-02 京セラ株式会社 気体処理装置
KR20230069274A (ko) * 2021-11-11 2023-05-19 삼성디스플레이 주식회사 표시 장치 및 그것의 제조 방법

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Also Published As

Publication number Publication date
JP2006509331A (ja) 2006-03-16
JP4409439B2 (ja) 2010-02-03
TW200414577A (en) 2004-08-01
AU2003279587A8 (en) 2004-06-23
CN1720349A (zh) 2006-01-11
AU2003279587A1 (en) 2004-06-23
WO2004051702A3 (en) 2004-12-02
KR20040048272A (ko) 2004-06-07
TWI227951B (en) 2005-02-11
WO2004051702A2 (en) 2004-06-17
KR100476136B1 (ko) 2005-03-10

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090325

Termination date: 20091221