AU2003279587A1 - Apparatus for treating surfaces of a substrate with atmospheric pressure plasma - Google Patents

Apparatus for treating surfaces of a substrate with atmospheric pressure plasma

Info

Publication number
AU2003279587A1
AU2003279587A1 AU2003279587A AU2003279587A AU2003279587A1 AU 2003279587 A1 AU2003279587 A1 AU 2003279587A1 AU 2003279587 A AU2003279587 A AU 2003279587A AU 2003279587 A AU2003279587 A AU 2003279587A AU 2003279587 A1 AU2003279587 A1 AU 2003279587A1
Authority
AU
Australia
Prior art keywords
substrate
atmospheric pressure
pressure plasma
treating surfaces
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003279587A
Other languages
English (en)
Other versions
AU2003279587A8 (en
Inventor
Hag-Joo Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEM Technology Co Ltd
Original Assignee
SEM Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEM Technology Co Ltd filed Critical SEM Technology Co Ltd
Publication of AU2003279587A8 publication Critical patent/AU2003279587A8/xx
Publication of AU2003279587A1 publication Critical patent/AU2003279587A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
AU2003279587A 2002-12-02 2003-11-19 Apparatus for treating surfaces of a substrate with atmospheric pressure plasma Abandoned AU2003279587A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2002-0076071 2002-12-02
KR10-2002-0076071A KR100476136B1 (ko) 2002-12-02 2002-12-02 대기압 플라즈마를 이용한 표면처리장치
PCT/KR2003/002485 WO2004051702A2 (en) 2002-12-02 2003-11-19 Apparatus for treating surfaces of a substrate with atmospheric pressure plasma

Publications (2)

Publication Number Publication Date
AU2003279587A8 AU2003279587A8 (en) 2004-06-23
AU2003279587A1 true AU2003279587A1 (en) 2004-06-23

Family

ID=36165408

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003279587A Abandoned AU2003279587A1 (en) 2002-12-02 2003-11-19 Apparatus for treating surfaces of a substrate with atmospheric pressure plasma

Country Status (6)

Country Link
JP (1) JP4409439B2 (ko)
KR (1) KR100476136B1 (ko)
CN (1) CN100471993C (ko)
AU (1) AU2003279587A1 (ko)
TW (1) TWI227951B (ko)
WO (1) WO2004051702A2 (ko)

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KR100708320B1 (ko) * 2004-04-22 2007-04-17 김기현 대기압 마이크로웨이브 플라즈마를 이용한 외장재 부품표면개질 장치 및 방법
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
DE102005040596B4 (de) * 2005-06-17 2009-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Entfernung einer dotierten Oberflächenschicht an Rückseiten von kristallinen Silizium-Solarwafern
EP1907596A4 (en) * 2005-07-26 2009-09-16 Psm Inc PLASMA TREATMENT DEVICE AND METHOD OF INJECTION TYPE
WO2007017271A2 (de) * 2005-08-11 2007-02-15 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V: Plasmaerzeugungsvorrichtung und plasmaerzeugungsverfahren
JP4782529B2 (ja) * 2005-10-06 2011-09-28 エア・ウォーター株式会社 表示装置の製造方法
KR100708212B1 (ko) * 2005-10-07 2007-04-16 주식회사 피에스엠 대기압 플라즈마 샤워유닛 이를 이용한 와이어본딩 장치 및방법
KR100720527B1 (ko) * 2005-12-28 2007-05-22 동부일렉트로닉스 주식회사 시모스 이미지 센서 및 그 제조 방법
KR100760651B1 (ko) * 2006-01-24 2007-09-21 주식회사 셈테크놀러지 처리가스 공급관을 구비하는 기판 표면처리장치
KR101293119B1 (ko) * 2006-11-28 2013-08-05 엘아이지에이디피 주식회사 플라즈마 처리장치와 플라즈마 표면처리방법
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
KR101333878B1 (ko) * 2007-11-20 2013-11-27 엘지전자 주식회사 대기압 플라즈마를 이용한 표면처리장치
KR100975665B1 (ko) * 2008-01-25 2010-08-17 (주)에스이 플라즈마 양산용 상압 플라즈마 발생장치
EP2283510B1 (en) 2008-05-02 2013-01-23 Oerlikon Solar AG, Trübbach Plasma treatment apparatus and method for plasma-assisted treatment of substrates
KR101791685B1 (ko) * 2008-10-14 2017-11-20 노벨러스 시스템즈, 인코포레이티드 수소 이용 화학 반응으로 고용량 주입 스트립(ｈｄｉｓ) 방법 및 장치
US8454850B2 (en) 2009-09-02 2013-06-04 Air Products And Chemicals, Inc. Method for the removal of surface oxides by electron attachment
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
KR101770008B1 (ko) 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 고주입량 주입 박리 전에 실리콘을 보호하기 위한 개선된 패시베이션 공정
WO2012010299A1 (en) * 2010-07-21 2012-01-26 Dow Corning France Plasma treatment of substrates
JP2014514140A (ja) * 2011-03-11 2014-06-19 パーデュー・リサーチ・ファウンデーション 制御されたガス組成物を利用したパッケージ内部での殺菌剤の生成
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US20130087287A1 (en) * 2011-10-10 2013-04-11 Korea Institute Of Machinery & Materials Plasma reactor for removal of contaminants
KR101513423B1 (ko) 2013-04-04 2015-04-21 주식회사 테스 플라즈마 발생장치 및 이를 포함하는 박막증착용 반응챔버
CN104779136A (zh) * 2014-01-10 2015-07-15 上海和辉光电有限公司 一种去除光致抗蚀剂的方法和设备
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
KR101657762B1 (ko) * 2014-06-23 2016-09-19 광운대학교 산학협력단 전기적 안전성 및 방열 기능을 구비한 플라즈마 제트 장치
CN104936371B (zh) * 2015-06-09 2017-07-07 北京三十四科技有限公司 一种空心电极介质阻挡结构
CN105047514B (zh) * 2015-07-27 2017-06-13 郑州大学 在玻璃表面等离子体刻蚀形成纹理结构的方法
KR102201183B1 (ko) * 2018-12-11 2021-01-13 한국과학기술원 수소 플라즈마를 활용한 이차원 물질의 전기적 특성 회복 방법 및 이의 장치
CN109526131A (zh) * 2018-12-26 2019-03-26 哈尔滨工业大学 一种气体流动环境下利用多地电极强化等离子体放电的方法
KR102524433B1 (ko) * 2019-11-27 2023-04-24 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
CN112139151A (zh) * 2020-09-11 2020-12-29 韩山师范学院 一种大型设备表面清理装置
JPWO2022114013A1 (ko) * 2020-11-30 2022-06-02
KR20230069274A (ko) * 2021-11-11 2023-05-19 삼성디스플레이 주식회사 표시 장치 및 그것의 제조 방법

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JPH02213480A (ja) * 1989-02-14 1990-08-24 Nippon Light Metal Co Ltd 高周波プラズマ発生用アルミニウム電極
JPH07278850A (ja) * 1994-04-15 1995-10-24 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
DE19521548A1 (de) * 1995-06-13 1996-12-19 Ipsen Ind Int Gmbh Verfahren und Vorrichtung zur Steuerung der elektrischen Stromdichte über einem Werkstück bei der Wärmebehandlung im Plasma
JPH0963132A (ja) * 1995-08-23 1997-03-07 Seiko Epson Corp 光学的情報記録媒体用基板の製造方法及びその製造装置
JPH09279350A (ja) * 1996-04-11 1997-10-28 Anelva Corp 表面処理装置
JP4161533B2 (ja) * 2000-12-28 2008-10-08 松下電工株式会社 プラズマ処理方法及びプラズマ処理装置
JP2002253952A (ja) * 2001-02-28 2002-09-10 Okura Ind Co Ltd プラズマ表面処理方法及び装置

Also Published As

Publication number Publication date
AU2003279587A8 (en) 2004-06-23
TW200414577A (en) 2004-08-01
JP4409439B2 (ja) 2010-02-03
WO2004051702A3 (en) 2004-12-02
WO2004051702A2 (en) 2004-06-17
CN100471993C (zh) 2009-03-25
JP2006509331A (ja) 2006-03-16
KR100476136B1 (ko) 2005-03-10
KR20040048272A (ko) 2004-06-07
CN1720349A (zh) 2006-01-11
TWI227951B (en) 2005-02-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase