CN100461005C - 防止显影缺陷的方法及用于该方法的组合物 - Google Patents
防止显影缺陷的方法及用于该方法的组合物 Download PDFInfo
- Publication number
- CN100461005C CN100461005C CNB038139367A CN03813936A CN100461005C CN 100461005 C CN100461005 C CN 100461005C CN B038139367 A CNB038139367 A CN B038139367A CN 03813936 A CN03813936 A CN 03813936A CN 100461005 C CN100461005 C CN 100461005C
- Authority
- CN
- China
- Prior art keywords
- acid
- composition
- chemistry
- photoresist coating
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP181127/2002 | 2002-06-21 | ||
JP2002181127A JP3914468B2 (ja) | 2002-06-21 | 2002-06-21 | 現像欠陥防止プロセスおよびそれに用いる組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1662854A CN1662854A (zh) | 2005-08-31 |
CN100461005C true CN100461005C (zh) | 2009-02-11 |
Family
ID=29996619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038139367A Expired - Fee Related CN100461005C (zh) | 2002-06-21 | 2003-06-10 | 防止显影缺陷的方法及用于该方法的组合物 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7799513B2 (zh) |
EP (1) | EP1542077B1 (zh) |
JP (1) | JP3914468B2 (zh) |
KR (1) | KR100932085B1 (zh) |
CN (1) | CN100461005C (zh) |
AT (1) | ATE528695T1 (zh) |
TW (1) | TWI326011B (zh) |
WO (1) | WO2004001510A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7214474B2 (en) * | 2004-06-29 | 2007-05-08 | Intel Corporation | Wash composition with polymeric surfactant |
US7799514B1 (en) * | 2004-10-01 | 2010-09-21 | Globalfoundries Inc | Surface treatment with an acidic composition to prevent substrate and environmental contamination |
KR100574993B1 (ko) * | 2004-11-19 | 2006-05-02 | 삼성전자주식회사 | 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법 |
JP4435196B2 (ja) * | 2007-03-29 | 2010-03-17 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
JP5222111B2 (ja) * | 2008-11-26 | 2013-06-26 | 東京応化工業株式会社 | レジスト表面改質液及びこれを利用したレジストパターン形成方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326389A (ja) * | 1992-05-20 | 1993-12-10 | Fujitsu Ltd | レジストパターンの形成方法 |
JPH06148896A (ja) * | 1992-11-13 | 1994-05-27 | Tokyo Ohka Kogyo Co Ltd | レジスト用塗布液及びそれを用いたレジスト材料 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
JPH09325500A (ja) * | 1996-06-07 | 1997-12-16 | Mitsubishi Chem Corp | 表面反射防止塗布組成物及びパターン形成方法 |
JP2000010294A (ja) * | 1998-06-19 | 2000-01-14 | Shin Etsu Chem Co Ltd | 反射防止膜材料 |
JP2001133984A (ja) * | 1999-11-01 | 2001-05-18 | Shin Etsu Chem Co Ltd | 反射防止膜材料及びパターン形成方法 |
WO2002001299A1 (fr) * | 2000-06-26 | 2002-01-03 | Clariant International Ltd. | Procede et materiau permettant d'empecher des anomalies de developpement |
JP2002148821A (ja) * | 2000-11-14 | 2002-05-22 | Shin Etsu Chem Co Ltd | レジスト表面処理剤組成物及びパターン形成方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4222828A (en) * | 1978-06-06 | 1980-09-16 | Akzo N.V. | Process for electro-codepositing inorganic particles and a metal on a surface |
US4313978A (en) * | 1978-12-20 | 1982-02-02 | Minnesota Mining And Manufacturing Company | Antistatic compositions and treatment |
JPH0685070B2 (ja) | 1985-02-04 | 1994-10-26 | 三菱電機株式会社 | レジストパターンの現像方法 |
US4623487A (en) * | 1985-03-14 | 1986-11-18 | E. I. Du Pont De Nemours & Company | Process for recovery of fluorosurfactants |
JPS6232453A (ja) | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
JPH0451020A (ja) | 1990-06-18 | 1992-02-19 | Sony Corp | 液晶表示装置及び液晶プロジェクタ |
DE69214035T2 (de) * | 1991-06-28 | 1997-04-10 | Ibm | Reflexionsverminderde Überzüge |
JP2944857B2 (ja) | 1993-06-25 | 1999-09-06 | 日本電信電話株式会社 | オーバーコート材料 |
JP2803549B2 (ja) | 1993-12-21 | 1998-09-24 | 信越化学工業株式会社 | 光反射性防止材料及びパターン形成方法 |
JP2878150B2 (ja) | 1994-04-27 | 1999-04-05 | 東京応化工業株式会社 | レジスト用塗布液およびこれを用いたレジスト材料 |
JP2985688B2 (ja) | 1994-09-21 | 1999-12-06 | 信越化学工業株式会社 | 水溶性膜材料及びパターン形成方法 |
US5714082A (en) * | 1995-06-02 | 1998-02-03 | Minnesota Mining And Manufacturing Company | Aqueous anti-soiling composition |
JP3336838B2 (ja) | 1995-08-22 | 2002-10-21 | 富士ゼロックス株式会社 | 静電荷像現像用トナー、静電荷像現像剤および画像形成方法 |
JPH09246166A (ja) | 1996-03-13 | 1997-09-19 | Nittetsu Semiconductor Kk | フォトレジストの現像方法 |
JP2000275835A (ja) | 1999-03-25 | 2000-10-06 | Mitsubishi Chemicals Corp | パターン形成方法 |
JP2001023893A (ja) | 1999-07-12 | 2001-01-26 | Nec Corp | フォトレジストパターンの形成方法 |
JP2001215734A (ja) | 2000-02-04 | 2001-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液 |
WO2002044814A2 (en) * | 2000-11-29 | 2002-06-06 | E. I. Du Pont De Nemours And Company | Photoresist compositions comprising bases and surfactants for microlithography |
JP3793920B2 (ja) | 2002-07-23 | 2006-07-05 | 株式会社リコー | 電子写真用トナーの製造方法、このトナーを用いた現像剤、現像方法、転写方法及びプロセスカートリッジ |
US7358032B2 (en) | 2002-11-08 | 2008-04-15 | Fujifilm Corporation | Planographic printing plate precursor |
-
2002
- 2002-06-21 JP JP2002181127A patent/JP3914468B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-10 US US10/518,105 patent/US7799513B2/en not_active Expired - Fee Related
- 2003-06-10 KR KR1020047020753A patent/KR100932085B1/ko active IP Right Grant
- 2003-06-10 EP EP03736123A patent/EP1542077B1/en not_active Expired - Lifetime
- 2003-06-10 WO PCT/JP2003/007354 patent/WO2004001510A1/ja active Application Filing
- 2003-06-10 CN CNB038139367A patent/CN100461005C/zh not_active Expired - Fee Related
- 2003-06-10 AT AT03736123T patent/ATE528695T1/de not_active IP Right Cessation
- 2003-06-19 TW TW092116611A patent/TWI326011B/zh not_active IP Right Cessation
-
2010
- 2010-08-10 US US12/853,640 patent/US20100324330A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326389A (ja) * | 1992-05-20 | 1993-12-10 | Fujitsu Ltd | レジストパターンの形成方法 |
JPH06148896A (ja) * | 1992-11-13 | 1994-05-27 | Tokyo Ohka Kogyo Co Ltd | レジスト用塗布液及びそれを用いたレジスト材料 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
JPH09325500A (ja) * | 1996-06-07 | 1997-12-16 | Mitsubishi Chem Corp | 表面反射防止塗布組成物及びパターン形成方法 |
JP2000010294A (ja) * | 1998-06-19 | 2000-01-14 | Shin Etsu Chem Co Ltd | 反射防止膜材料 |
JP2001133984A (ja) * | 1999-11-01 | 2001-05-18 | Shin Etsu Chem Co Ltd | 反射防止膜材料及びパターン形成方法 |
WO2002001299A1 (fr) * | 2000-06-26 | 2002-01-03 | Clariant International Ltd. | Procede et materiau permettant d'empecher des anomalies de developpement |
JP2002148821A (ja) * | 2000-11-14 | 2002-05-22 | Shin Etsu Chem Co Ltd | レジスト表面処理剤組成物及びパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100932085B1 (ko) | 2009-12-16 |
JP2004029088A (ja) | 2004-01-29 |
ATE528695T1 (de) | 2011-10-15 |
EP1542077B1 (en) | 2011-10-12 |
EP1542077A1 (en) | 2005-06-15 |
EP1542077A4 (en) | 2009-02-25 |
US20050221236A1 (en) | 2005-10-06 |
KR20050023319A (ko) | 2005-03-09 |
CN1662854A (zh) | 2005-08-31 |
WO2004001510A1 (ja) | 2003-12-31 |
US20100324330A1 (en) | 2010-12-23 |
JP3914468B2 (ja) | 2007-05-16 |
TWI326011B (en) | 2010-06-11 |
US7799513B2 (en) | 2010-09-21 |
TW200403535A (en) | 2004-03-01 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIAL (JAPAN) CO., LTD. Effective date: 20120521 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120521 Address after: Tokyo, Japan Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan Patentee before: AZ electronic materials (Japan) Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150422 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150422 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan Patentee before: AZ Electronic Materials (Japan) K. K. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20200610 |
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CF01 | Termination of patent right due to non-payment of annual fee |