CN1662854A - 防止显影缺陷的方法及用于该方法的组合物 - Google Patents
防止显影缺陷的方法及用于该方法的组合物 Download PDFInfo
- Publication number
- CN1662854A CN1662854A CN038139367A CN03813936A CN1662854A CN 1662854 A CN1662854 A CN 1662854A CN 038139367 A CN038139367 A CN 038139367A CN 03813936 A CN03813936 A CN 03813936A CN 1662854 A CN1662854 A CN 1662854A
- Authority
- CN
- China
- Prior art keywords
- acid
- composition
- chemistry
- photoresist coating
- surfactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
显影前膜厚 | 显影后膜厚 | 膜厚的减少量 | 有机酸 | 碱 | 图形轮廓 | |
(埃) | (埃) | (埃) | ||||
实施例1 | 4819 | 4589 | 230 | 1 | 1.04 | 近似矩形 |
实施例2 | 4789 | 4460 | 329 | 1 | 1.25 | 矩形 |
实施例3 | 4796 | 4395 | 401 | 1 | 1.38 | 矩形 |
实施例4 | 4837 | 4379 | 458 | 1 | 1.52 | 近似矩形 |
实施例5 | 4809 | 4299 | 510 | 1 | 2.00 | 近似矩形 |
显影前膜厚 | 显影后膜厚 | 膜厚减少量 | 图形轮廓 | |
(埃) | (埃) | (埃) | ||
对比例1 | 4801 | 4698 | 103 | T顶 |
显影前膜厚 | 显影后膜厚 | 膜厚减少量 | 酸 | 碱 | 图形轮廓 | |
(埃) | (埃) | (埃) | ||||
对比例2 | 4820 | 4649 | 171 | 1 | 0.90 | T顶 |
对比例3 | 4805 | 4624 | 1 81 | 1 | 0.95 | T顶 |
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002181127A JP3914468B2 (ja) | 2002-06-21 | 2002-06-21 | 現像欠陥防止プロセスおよびそれに用いる組成物 |
JP181127/2002 | 2002-06-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1662854A true CN1662854A (zh) | 2005-08-31 |
CN100461005C CN100461005C (zh) | 2009-02-11 |
Family
ID=29996619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038139367A Expired - Fee Related CN100461005C (zh) | 2002-06-21 | 2003-06-10 | 防止显影缺陷的方法及用于该方法的组合物 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7799513B2 (zh) |
EP (1) | EP1542077B1 (zh) |
JP (1) | JP3914468B2 (zh) |
KR (1) | KR100932085B1 (zh) |
CN (1) | CN100461005C (zh) |
AT (1) | ATE528695T1 (zh) |
TW (1) | TWI326011B (zh) |
WO (1) | WO2004001510A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7214474B2 (en) * | 2004-06-29 | 2007-05-08 | Intel Corporation | Wash composition with polymeric surfactant |
US7799514B1 (en) * | 2004-10-01 | 2010-09-21 | Globalfoundries Inc | Surface treatment with an acidic composition to prevent substrate and environmental contamination |
KR100574993B1 (ko) * | 2004-11-19 | 2006-05-02 | 삼성전자주식회사 | 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법 |
JP4435196B2 (ja) * | 2007-03-29 | 2010-03-17 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
JP5222111B2 (ja) * | 2008-11-26 | 2013-06-26 | 東京応化工業株式会社 | レジスト表面改質液及びこれを利用したレジストパターン形成方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4222828A (en) * | 1978-06-06 | 1980-09-16 | Akzo N.V. | Process for electro-codepositing inorganic particles and a metal on a surface |
US4313978A (en) * | 1978-12-20 | 1982-02-02 | Minnesota Mining And Manufacturing Company | Antistatic compositions and treatment |
JPH0685070B2 (ja) | 1985-02-04 | 1994-10-26 | 三菱電機株式会社 | レジストパターンの現像方法 |
US4623487A (en) * | 1985-03-14 | 1986-11-18 | E. I. Du Pont De Nemours & Company | Process for recovery of fluorosurfactants |
JPS6232453A (ja) | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
JPH0451020A (ja) | 1990-06-18 | 1992-02-19 | Sony Corp | 液晶表示装置及び液晶プロジェクタ |
JP2643056B2 (ja) * | 1991-06-28 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表面反射防止コーティング形成組成物及びその使用 |
JPH05326389A (ja) * | 1992-05-20 | 1993-12-10 | Fujitsu Ltd | レジストパターンの形成方法 |
JP3192505B2 (ja) * | 1992-11-13 | 2001-07-30 | 東京応化工業株式会社 | 半導体素子製造用パターン形成方法 |
JP2944857B2 (ja) | 1993-06-25 | 1999-09-06 | 日本電信電話株式会社 | オーバーコート材料 |
JP2803549B2 (ja) | 1993-12-21 | 1998-09-24 | 信越化学工業株式会社 | 光反射性防止材料及びパターン形成方法 |
JP2878150B2 (ja) | 1994-04-27 | 1999-04-05 | 東京応化工業株式会社 | レジスト用塗布液およびこれを用いたレジスト材料 |
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
JP2985688B2 (ja) | 1994-09-21 | 1999-12-06 | 信越化学工業株式会社 | 水溶性膜材料及びパターン形成方法 |
US5714082A (en) * | 1995-06-02 | 1998-02-03 | Minnesota Mining And Manufacturing Company | Aqueous anti-soiling composition |
JP3336838B2 (ja) | 1995-08-22 | 2002-10-21 | 富士ゼロックス株式会社 | 静電荷像現像用トナー、静電荷像現像剤および画像形成方法 |
JPH09246166A (ja) | 1996-03-13 | 1997-09-19 | Nittetsu Semiconductor Kk | フォトレジストの現像方法 |
JPH09325500A (ja) * | 1996-06-07 | 1997-12-16 | Mitsubishi Chem Corp | 表面反射防止塗布組成物及びパターン形成方法 |
JP3967466B2 (ja) * | 1998-06-19 | 2007-08-29 | 信越化学工業株式会社 | 反射防止膜材料 |
JP2000275835A (ja) | 1999-03-25 | 2000-10-06 | Mitsubishi Chemicals Corp | パターン形成方法 |
JP2001023893A (ja) | 1999-07-12 | 2001-01-26 | Nec Corp | フォトレジストパターンの形成方法 |
JP3801398B2 (ja) * | 1999-11-01 | 2006-07-26 | 信越化学工業株式会社 | 反射防止膜材料及びパターン形成方法 |
JP2001215734A (ja) | 2000-02-04 | 2001-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液 |
JP3320402B2 (ja) | 2000-06-26 | 2002-09-03 | クラリアント ジャパン 株式会社 | 現像欠陥防止プロセス及び材料 |
JP3835521B2 (ja) * | 2000-11-14 | 2006-10-18 | 信越化学工業株式会社 | レジスト表面処理剤組成物 |
JP2004536328A (ja) * | 2000-11-29 | 2004-12-02 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 塩基および界面活性剤を含むマイクロリソグラフィ用フォトレジスト組成物 |
JP3793920B2 (ja) | 2002-07-23 | 2006-07-05 | 株式会社リコー | 電子写真用トナーの製造方法、このトナーを用いた現像剤、現像方法、転写方法及びプロセスカートリッジ |
US7358032B2 (en) | 2002-11-08 | 2008-04-15 | Fujifilm Corporation | Planographic printing plate precursor |
-
2002
- 2002-06-21 JP JP2002181127A patent/JP3914468B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-10 CN CNB038139367A patent/CN100461005C/zh not_active Expired - Fee Related
- 2003-06-10 EP EP03736123A patent/EP1542077B1/en not_active Expired - Lifetime
- 2003-06-10 KR KR1020047020753A patent/KR100932085B1/ko active IP Right Grant
- 2003-06-10 AT AT03736123T patent/ATE528695T1/de not_active IP Right Cessation
- 2003-06-10 WO PCT/JP2003/007354 patent/WO2004001510A1/ja active Application Filing
- 2003-06-10 US US10/518,105 patent/US7799513B2/en not_active Expired - Fee Related
- 2003-06-19 TW TW092116611A patent/TWI326011B/zh not_active IP Right Cessation
-
2010
- 2010-08-10 US US12/853,640 patent/US20100324330A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2004001510A1 (ja) | 2003-12-31 |
TWI326011B (en) | 2010-06-11 |
US20100324330A1 (en) | 2010-12-23 |
JP2004029088A (ja) | 2004-01-29 |
US7799513B2 (en) | 2010-09-21 |
KR100932085B1 (ko) | 2009-12-16 |
EP1542077A1 (en) | 2005-06-15 |
ATE528695T1 (de) | 2011-10-15 |
EP1542077B1 (en) | 2011-10-12 |
JP3914468B2 (ja) | 2007-05-16 |
EP1542077A4 (en) | 2009-02-25 |
CN100461005C (zh) | 2009-02-11 |
KR20050023319A (ko) | 2005-03-09 |
US20050221236A1 (en) | 2005-10-06 |
TW200403535A (en) | 2004-03-01 |
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Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIAL (JAPAN) CO., LTD. Effective date: 20120521 |
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Effective date of registration: 20120521 Address after: Tokyo, Japan Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan Patentee before: AZ electronic materials (Japan) Co., Ltd. |
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Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150422 |
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Effective date of registration: 20150422 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan Patentee before: AZ Electronic Materials (Japan) K. K. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20200610 |
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CF01 | Termination of patent right due to non-payment of annual fee |