CN100459147C - 产生高性能有机半导体器件的方法 - Google Patents

产生高性能有机半导体器件的方法 Download PDF

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CN100459147C
CN100459147C CNB038002280A CN03800228A CN100459147C CN 100459147 C CN100459147 C CN 100459147C CN B038002280 A CNB038002280 A CN B038002280A CN 03800228 A CN03800228 A CN 03800228A CN 100459147 C CN100459147 C CN 100459147C
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organic
organic semiconductor
metal
semiconductor device
electrode
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CN1524295A (zh
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Y·杨
L·马
M·L·贝戈尔
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Precision Dynamics Corp
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Precision Dynamics Corp
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CNB038002280A 2002-08-12 2003-04-10 产生高性能有机半导体器件的方法 Expired - Fee Related CN100459147C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/218,141 US6784017B2 (en) 2002-08-12 2002-08-12 Method of creating a high performance organic semiconductor device
US10/218,141 2002-08-12

Publications (2)

Publication Number Publication Date
CN1524295A CN1524295A (zh) 2004-08-25
CN100459147C true CN100459147C (zh) 2009-02-04

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US (2) US6784017B2 (https=)
EP (1) EP1529312A4 (https=)
JP (1) JP2005520356A (https=)
KR (1) KR100729021B1 (https=)
CN (1) CN100459147C (https=)
AU (1) AU2003226074A1 (https=)
BR (1) BR0303025A (https=)
CA (1) CA2450611A1 (https=)
IL (1) IL158321A0 (https=)
MX (1) MXPA04010019A (https=)
TW (1) TWI244760B (https=)
WO (1) WO2004015779A1 (https=)

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