CN100448042C - 氮化物系半导体衬底及其制造方法 - Google Patents
氮化物系半导体衬底及其制造方法 Download PDFInfo
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- CN100448042C CN100448042C CNB2006100801679A CN200610080167A CN100448042C CN 100448042 C CN100448042 C CN 100448042C CN B2006100801679 A CNB2006100801679 A CN B2006100801679A CN 200610080167 A CN200610080167 A CN 200610080167A CN 100448042 C CN100448042 C CN 100448042C
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
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Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005319630A JP4720441B2 (ja) | 2005-11-02 | 2005-11-02 | 青色発光ダイオード用GaN基板 |
JP2005319630 | 2005-11-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1960014A CN1960014A (zh) | 2007-05-09 |
CN100448042C true CN100448042C (zh) | 2008-12-31 |
Family
ID=37995099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100801679A Active CN100448042C (zh) | 2005-11-02 | 2006-05-10 | 氮化物系半导体衬底及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7662488B2 (zh) |
JP (1) | JP4720441B2 (zh) |
CN (1) | CN100448042C (zh) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4631681B2 (ja) | 2005-12-05 | 2011-02-16 | 日立電線株式会社 | 窒化物系半導体基板及び半導体装置 |
TWI334164B (en) * | 2006-06-07 | 2010-12-01 | Ind Tech Res Inst | Method of manufacturing nitride semiconductor substrate and composite material substrate |
EP1993140A1 (en) * | 2007-05-16 | 2008-11-19 | Hitachi Cable, Ltd. | Nitride-based semiconductor substrate and semiconductor device |
JP5056299B2 (ja) * | 2007-09-18 | 2012-10-24 | 日立電線株式会社 | 窒化物半導体下地基板、窒化物半導体積層基板および窒化物半導体下地基板の製造方法 |
US7969708B2 (en) * | 2007-11-01 | 2011-06-28 | Taiwan Semiconductor Company, Ltd. | Alpha tantalum capacitor plate |
JP5045388B2 (ja) * | 2007-11-20 | 2012-10-10 | 住友電気工業株式会社 | Iii族窒化物半導体結晶の成長方法およびiii族窒化物半導体結晶基板の製造方法 |
JP5018423B2 (ja) * | 2007-11-20 | 2012-09-05 | 住友電気工業株式会社 | Iii族窒化物半導体結晶基板および半導体デバイス |
JP4867981B2 (ja) * | 2008-12-04 | 2012-02-01 | 住友電気工業株式会社 | GaN結晶の成長方法 |
US8461071B2 (en) * | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
CN104795314B (zh) * | 2009-08-26 | 2018-02-09 | 首尔伟傲世有限公司 | 制造发光装置的方法 |
JP2013505588A (ja) * | 2009-09-18 | 2013-02-14 | ソラア インコーポレーテッド | 電流密度操作を用いた電力発光ダイオード及び方法 |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
CN101734920B (zh) * | 2009-12-04 | 2012-07-04 | 西安交通大学 | 一种氮化钛多孔陶瓷及其制备方法 |
US8253162B2 (en) | 2010-04-27 | 2012-08-28 | Sumitomo Electric Industries, Ltd. | GaN substrate and light-emitting device |
DE102010021144A1 (de) * | 2010-05-21 | 2011-11-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
JP2011256082A (ja) | 2010-06-10 | 2011-12-22 | Sumitomo Electric Ind Ltd | GaN結晶自立基板およびその製造方法 |
CN101901760B (zh) * | 2010-06-24 | 2012-02-08 | 西安电子科技大学 | 基于c面SiC衬底上极性c面GaN的MOCVD生长方法 |
JP2013203617A (ja) * | 2012-03-29 | 2013-10-07 | Ngk Insulators Ltd | 13族元素窒化物結晶の製造方法および積層体 |
US9917004B2 (en) | 2012-10-12 | 2018-03-13 | Sumitomo Electric Industries, Ltd. | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device |
JP6322890B2 (ja) | 2013-02-18 | 2018-05-16 | 住友電気工業株式会社 | Iii族窒化物複合基板およびその製造方法、ならびにiii族窒化物半導体デバイスの製造方法 |
CN104995713A (zh) | 2013-02-18 | 2015-10-21 | 住友电气工业株式会社 | Iii族氮化物复合衬底及其制造方法,层叠的iii族氮化物复合衬底,以及iii族氮化物半导体器件及其制造方法 |
KR102122366B1 (ko) | 2013-06-14 | 2020-06-12 | 삼성전자주식회사 | 질화물 반도체 박막 제조방법 및 이를 이용한 질화물 반도체 소자 제조방법 |
KR20170018802A (ko) | 2014-06-17 | 2017-02-20 | 엘시드 가부시끼가이샤 | 발광 소자의 제조 방법 및 발광 소자 |
CN105244316A (zh) * | 2015-10-19 | 2016-01-13 | 中国电子科技集团公司第四十六研究所 | 一种掩膜辅助制备多孔GaN层的方法 |
JP6356315B1 (ja) * | 2017-05-29 | 2018-07-11 | 株式会社サイオクス | 窒化物結晶基板、半導体積層物、半導体積層物の製造方法および半導体装置の製造方法 |
JP7084123B2 (ja) * | 2017-11-06 | 2022-06-14 | 古河機械金属株式会社 | Iii族窒化物半導体基板 |
KR102500059B1 (ko) * | 2017-11-07 | 2023-02-14 | 갈리움 엔터프라이지즈 피티와이 엘티디 | 매립된 활성화된 p-(Al,In)GaN 층 |
JP6553765B1 (ja) * | 2018-03-20 | 2019-07-31 | 株式会社サイオクス | 結晶基板の製造方法および結晶基板 |
JP7112879B2 (ja) * | 2018-05-15 | 2022-08-04 | 株式会社サイオクス | 窒化物半導体積層物の製造方法、膜質検査方法および半導体成長装置の検査方法 |
JP7141849B2 (ja) | 2018-05-16 | 2022-09-26 | 株式会社サイオクス | 窒化物結晶基板および窒化物結晶基板の製造方法 |
JP6783269B2 (ja) * | 2018-06-08 | 2020-11-11 | 株式会社サイオクス | 窒化物結晶基板、半導体積層物、窒化物結晶基板の製造方法、半導体積層物の製造方法および半導体装置の製造方法 |
WO2020241760A1 (ja) * | 2019-05-30 | 2020-12-03 | 三菱ケミカル株式会社 | GaN基板ウエハおよびその製造方法 |
JPWO2020241761A1 (zh) * | 2019-05-30 | 2020-12-03 | ||
JP7101736B2 (ja) * | 2020-10-21 | 2022-07-15 | 株式会社サイオクス | GaN単結晶基板および半導体積層物 |
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JP2002141283A (ja) * | 2000-08-08 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 半導体基板、その製造方法、半導体装置及びパターン形成方法 |
US20040245535A1 (en) * | 2000-10-23 | 2004-12-09 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
JP2005213075A (ja) * | 2004-01-28 | 2005-08-11 | Sumitomo Electric Ind Ltd | GaN単結晶基板およびその製造方法ならびに発光デバイス |
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JPH088217B2 (ja) | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
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TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
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JP3886341B2 (ja) * | 2001-05-21 | 2007-02-28 | 日本電気株式会社 | 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板 |
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KR101284932B1 (ko) * | 2002-12-27 | 2013-07-10 | 제너럴 일렉트릭 캄파니 | 갈륨 나이트라이드 결정, 호모에피택셜 갈륨 나이트라이드계 디바이스 및 이들의 제조 방법 |
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JP4365259B2 (ja) * | 2004-04-15 | 2009-11-18 | 古河機械金属株式会社 | 気相成長装置 |
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2005
- 2005-11-02 JP JP2005319630A patent/JP4720441B2/ja active Active
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2006
- 2006-02-21 US US11/357,428 patent/US7662488B2/en active Active
- 2006-05-10 CN CNB2006100801679A patent/CN100448042C/zh active Active
Patent Citations (3)
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JP2002141283A (ja) * | 2000-08-08 | 2002-05-17 | Matsushita Electric Ind Co Ltd | 半導体基板、その製造方法、半導体装置及びパターン形成方法 |
US20040245535A1 (en) * | 2000-10-23 | 2004-12-09 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
JP2005213075A (ja) * | 2004-01-28 | 2005-08-11 | Sumitomo Electric Ind Ltd | GaN単結晶基板およびその製造方法ならびに発光デバイス |
Also Published As
Publication number | Publication date |
---|---|
CN1960014A (zh) | 2007-05-09 |
JP4720441B2 (ja) | 2011-07-13 |
US7662488B2 (en) | 2010-02-16 |
US20070096147A1 (en) | 2007-05-03 |
JP2007126320A (ja) | 2007-05-24 |
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