CN100446255C - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN100446255C CN100446255C CNB038259087A CN03825908A CN100446255C CN 100446255 C CN100446255 C CN 100446255C CN B038259087 A CNB038259087 A CN B038259087A CN 03825908 A CN03825908 A CN 03825908A CN 100446255 C CN100446255 C CN 100446255C
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/003316 WO2004084305A1 (ja) | 2003-03-19 | 2003-03-19 | 半導体装置及びその製造方法、並びに撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1739198A CN1739198A (zh) | 2006-02-22 |
CN100446255C true CN100446255C (zh) | 2008-12-24 |
Family
ID=33018152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038259087A Expired - Fee Related CN100446255C (zh) | 2003-03-19 | 2003-03-19 | 半导体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7619269B2 (zh) |
EP (1) | EP1605509B1 (zh) |
JP (1) | JP5140235B2 (zh) |
CN (1) | CN100446255C (zh) |
AU (1) | AU2003213430A1 (zh) |
TW (1) | TWI228823B (zh) |
WO (1) | WO2004084305A1 (zh) |
Families Citing this family (97)
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JP4383959B2 (ja) * | 2003-05-28 | 2009-12-16 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
JP2005340475A (ja) * | 2004-05-26 | 2005-12-08 | Sony Corp | 固体撮像装置 |
CN1992215A (zh) * | 2005-12-29 | 2007-07-04 | 东部电子股份有限公司 | 制造cmos图像传感器的方法 |
WO2007132457A2 (en) | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Combined distortion estimation and error correction coding for memory devices |
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WO2007132453A2 (en) | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Distortion estimation and cancellation in memory devices |
US7547573B2 (en) * | 2006-08-01 | 2009-06-16 | United Microelectronics Corp. | Image sensor and method of manufacturing the same |
US8060806B2 (en) | 2006-08-27 | 2011-11-15 | Anobit Technologies Ltd. | Estimation of non-linear distortion in memory devices |
WO2008053472A2 (en) | 2006-10-30 | 2008-05-08 | Anobit Technologies Ltd. | Reading memory cells using multiple thresholds |
CN101601094B (zh) | 2006-10-30 | 2013-03-27 | 苹果公司 | 使用多个门限读取存储单元的方法 |
US7924648B2 (en) | 2006-11-28 | 2011-04-12 | Anobit Technologies Ltd. | Memory power and performance management |
US7706182B2 (en) | 2006-12-03 | 2010-04-27 | Anobit Technologies Ltd. | Adaptive programming of analog memory cells using statistical characteristics |
US8151163B2 (en) | 2006-12-03 | 2012-04-03 | Anobit Technologies Ltd. | Automatic defect management in memory devices |
US7900102B2 (en) | 2006-12-17 | 2011-03-01 | Anobit Technologies Ltd. | High-speed programming of memory devices |
US7751240B2 (en) | 2007-01-24 | 2010-07-06 | Anobit Technologies Ltd. | Memory device with negative thresholds |
US8151166B2 (en) | 2007-01-24 | 2012-04-03 | Anobit Technologies Ltd. | Reduction of back pattern dependency effects in memory devices |
US8369141B2 (en) | 2007-03-12 | 2013-02-05 | Apple Inc. | Adaptive estimation of memory cell read thresholds |
KR100806040B1 (ko) * | 2007-04-16 | 2008-02-26 | 동부일렉트로닉스 주식회사 | 플래시 메모리 소자의 제조 방법 |
US8001320B2 (en) | 2007-04-22 | 2011-08-16 | Anobit Technologies Ltd. | Command interface for memory devices |
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US8429493B2 (en) | 2007-05-12 | 2013-04-23 | Apple Inc. | Memory device with internal signap processing unit |
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US8174905B2 (en) | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
US7773413B2 (en) | 2007-10-08 | 2010-08-10 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells in the presence of temperature variations |
US8068360B2 (en) | 2007-10-19 | 2011-11-29 | Anobit Technologies Ltd. | Reading analog memory cells using built-in multi-threshold commands |
US8000141B1 (en) | 2007-10-19 | 2011-08-16 | Anobit Technologies Ltd. | Compensation for voltage drifts in analog memory cells |
US8527819B2 (en) | 2007-10-19 | 2013-09-03 | Apple Inc. | Data storage in analog memory cell arrays having erase failures |
KR101509836B1 (ko) | 2007-11-13 | 2015-04-06 | 애플 인크. | 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택 |
US8225181B2 (en) | 2007-11-30 | 2012-07-17 | Apple Inc. | Efficient re-read operations from memory devices |
US8209588B2 (en) | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
US8456905B2 (en) | 2007-12-16 | 2013-06-04 | Apple Inc. | Efficient data storage in multi-plane memory devices |
US8085586B2 (en) | 2007-12-27 | 2011-12-27 | Anobit Technologies Ltd. | Wear level estimation in analog memory cells |
KR100997328B1 (ko) * | 2007-12-27 | 2010-11-29 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
US8156398B2 (en) | 2008-02-05 | 2012-04-10 | Anobit Technologies Ltd. | Parameter estimation based on error correction code parity check equations |
US7924587B2 (en) | 2008-02-21 | 2011-04-12 | Anobit Technologies Ltd. | Programming of analog memory cells using a single programming pulse per state transition |
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JP2014525091A (ja) | 2011-07-13 | 2014-09-25 | サイオニクス、インク. | 生体撮像装置および関連方法 |
JP5930650B2 (ja) | 2011-10-07 | 2016-06-08 | キヤノン株式会社 | 半導体装置の製造方法 |
JP5943577B2 (ja) | 2011-10-07 | 2016-07-05 | キヤノン株式会社 | 光電変換装置および撮像システム |
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JP6711005B2 (ja) * | 2016-02-23 | 2020-06-17 | 株式会社リコー | 画素ユニット、及び撮像素子 |
JP2019212900A (ja) * | 2018-05-31 | 2019-12-12 | パナソニックIpマネジメント株式会社 | 撮像装置 |
CN111627941B (zh) * | 2019-02-27 | 2023-04-18 | 中芯集成电路(宁波)有限公司 | Cmos图像传感器封装模块及其形成方法、摄像装置 |
CN113206119B (zh) * | 2021-04-29 | 2023-04-18 | 武汉新芯集成电路制造有限公司 | 有源像素电路、图像传感器和电子设备 |
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WO2023210194A1 (ja) * | 2022-04-28 | 2023-11-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
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- 2003-03-19 AU AU2003213430A patent/AU2003213430A1/en not_active Abandoned
- 2003-03-19 CN CNB038259087A patent/CN100446255C/zh not_active Expired - Fee Related
- 2003-03-19 WO PCT/JP2003/003316 patent/WO2004084305A1/ja active Application Filing
- 2003-03-19 JP JP2004569573A patent/JP5140235B2/ja not_active Expired - Fee Related
- 2003-03-24 TW TW092106541A patent/TWI228823B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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EP1605509A4 (en) | 2008-01-02 |
CN1739198A (zh) | 2006-02-22 |
EP1605509B1 (en) | 2016-03-16 |
JPWO2004084305A1 (ja) | 2006-06-29 |
TWI228823B (en) | 2005-03-01 |
WO2004084305A1 (ja) | 2004-09-30 |
US7619269B2 (en) | 2009-11-17 |
JP5140235B2 (ja) | 2013-02-06 |
TW200419790A (en) | 2004-10-01 |
EP1605509A1 (en) | 2005-12-14 |
US20050224853A1 (en) | 2005-10-13 |
AU2003213430A1 (en) | 2004-10-11 |
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