CN100431050C - 可擦除且可编程非易失性单元及其操作方法 - Google Patents
可擦除且可编程非易失性单元及其操作方法 Download PDFInfo
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- CN100431050C CN100431050C CNB038161680A CN03816168A CN100431050C CN 100431050 C CN100431050 C CN 100431050C CN B038161680 A CNB038161680 A CN B038161680A CN 03816168 A CN03816168 A CN 03816168A CN 100431050 C CN100431050 C CN 100431050C
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- 238000007667 floating Methods 0.000 claims abstract description 45
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 230000000295 complement effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- -1 polyoxy Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
- G11C16/045—Floating gate memory cells with both P and N channel memory transistors, usually sharing a common floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/10—Floating gate memory cells with a single polysilicon layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
- Immobilizing And Processing Of Enzymes And Microorganisms (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
Abstract
Description
V<sub>d</sub>(n-ch) | V<sub>cg</sub> | V<sub>d</sub>(p-ch) | |
编程 | 7.0 | 8.0 | 浮动 |
读取 | 浮动 | V<sub>dd</sub> | 1到2.5V |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02015181.7 | 2002-07-08 | ||
EP02015181 | 2002-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1666295A CN1666295A (zh) | 2005-09-07 |
CN100431050C true CN100431050C (zh) | 2008-11-05 |
Family
ID=30011062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038161680A Expired - Fee Related CN100431050C (zh) | 2002-07-08 | 2003-06-25 | 可擦除且可编程非易失性单元及其操作方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7289362B2 (zh) |
EP (1) | EP1522078B1 (zh) |
JP (1) | JP4749714B2 (zh) |
CN (1) | CN100431050C (zh) |
AT (1) | ATE371933T1 (zh) |
AU (1) | AU2003242913A1 (zh) |
DE (1) | DE60315985T2 (zh) |
WO (1) | WO2004006264A2 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4889268B2 (ja) * | 2005-09-22 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | Eepromとeepromの駆動方法 |
FR2904464A1 (fr) * | 2006-07-27 | 2008-02-01 | St Microelectronics Sa | Circuit eeprom de retention de charges pour mesure temporelle |
DE602007007219D1 (de) * | 2006-07-27 | 2010-07-29 | St Microelectronics Sa | Selements zur zeitmessung |
US8331203B2 (en) * | 2006-07-27 | 2012-12-11 | Stmicroelectronics S.A. | Charge retention circuit for a time measurement |
FR2904463A1 (fr) * | 2006-07-27 | 2008-02-01 | St Microelectronics Sa | Programmation d'un circuit de retention de charges pour mesure temporelle |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247478A (en) * | 1992-03-06 | 1993-09-21 | Altera Corporation | Programmable transfer-devices |
US5646901A (en) * | 1996-03-26 | 1997-07-08 | Advanced Micro Devices, Inc. | CMOS memory cell with tunneling during program and erase through the NMOS and PMOS transistors and a pass gate separating the NMOS and PMOS transistors |
CN1252156A (zh) * | 1997-04-11 | 2000-05-03 | 硅芯片公司 | 电擦除非易失性存储器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03179780A (ja) * | 1989-12-07 | 1991-08-05 | Fujitsu Ltd | 半導体装置 |
EP0493640B1 (en) * | 1990-12-31 | 1995-04-19 | STMicroelectronics S.r.l. | EEPROM cell with single metal level gate having a (read) interface toward the external circuitry isolated from the (write/erase) interface toward the programming circuitry |
US5615150A (en) * | 1995-11-02 | 1997-03-25 | Advanced Micro Devices, Inc. | Control gate-addressed CMOS non-volatile cell that programs through gates of CMOS transistors |
US5838040A (en) * | 1997-03-31 | 1998-11-17 | Gatefield Corporation | Nonvolatile reprogrammable interconnect cell with FN tunneling in sense |
JP4000654B2 (ja) * | 1997-02-27 | 2007-10-31 | セイコーエプソン株式会社 | 半導体装置及び電子機器 |
US5933732A (en) * | 1997-05-07 | 1999-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nonvolatile devices with P-channel EEPROM devices as injector |
US5892709A (en) * | 1997-05-09 | 1999-04-06 | Motorola, Inc. | Single level gate nonvolatile memory device and method for accessing the same |
JP4666783B2 (ja) * | 2000-02-01 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6816154B2 (en) * | 2001-05-30 | 2004-11-09 | Palmone, Inc. | Optical sensor based user interface for a portable electronic device |
EP1306854A1 (en) * | 2001-10-29 | 2003-05-02 | Dialog Semiconductor GmbH | Floating gate programmable cell array for standard CMOS |
-
2003
- 2003-06-25 DE DE60315985T patent/DE60315985T2/de not_active Expired - Lifetime
- 2003-06-25 AT AT03762837T patent/ATE371933T1/de not_active IP Right Cessation
- 2003-06-25 WO PCT/IB2003/002807 patent/WO2004006264A2/en active IP Right Grant
- 2003-06-25 CN CNB038161680A patent/CN100431050C/zh not_active Expired - Fee Related
- 2003-06-25 JP JP2004519081A patent/JP4749714B2/ja not_active Expired - Fee Related
- 2003-06-25 US US10/520,340 patent/US7289362B2/en not_active Expired - Fee Related
- 2003-06-25 AU AU2003242913A patent/AU2003242913A1/en not_active Abandoned
- 2003-06-25 EP EP03762837A patent/EP1522078B1/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247478A (en) * | 1992-03-06 | 1993-09-21 | Altera Corporation | Programmable transfer-devices |
US5646901A (en) * | 1996-03-26 | 1997-07-08 | Advanced Micro Devices, Inc. | CMOS memory cell with tunneling during program and erase through the NMOS and PMOS transistors and a pass gate separating the NMOS and PMOS transistors |
CN1252156A (zh) * | 1997-04-11 | 2000-05-03 | 硅芯片公司 | 电擦除非易失性存储器 |
Also Published As
Publication number | Publication date |
---|---|
DE60315985D1 (de) | 2007-10-11 |
JP4749714B2 (ja) | 2011-08-17 |
EP1522078A2 (en) | 2005-04-13 |
AU2003242913A1 (en) | 2004-01-23 |
JP2005532684A (ja) | 2005-10-27 |
EP1522078B1 (en) | 2007-08-29 |
CN1666295A (zh) | 2005-09-07 |
DE60315985T2 (de) | 2008-05-21 |
ATE371933T1 (de) | 2007-09-15 |
WO2004006264A2 (en) | 2004-01-15 |
WO2004006264A3 (en) | 2004-03-18 |
US7289362B2 (en) | 2007-10-30 |
US20050259488A1 (en) | 2005-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070810 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070810 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KALAI HANXILE CO., LTD. Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV Effective date: 20120116 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120116 Address after: American Delaware Patentee after: NXP BV Address before: Holland Ian Deho Finn Patentee before: Koninkl Philips Electronics NV |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081105 Termination date: 20130625 |