CN100421224C - GaN基板的研磨方法 - Google Patents
GaN基板的研磨方法 Download PDFInfo
- Publication number
- CN100421224C CN100421224C CNB2005800017073A CN200580001707A CN100421224C CN 100421224 C CN100421224 C CN 100421224C CN B2005800017073 A CNB2005800017073 A CN B2005800017073A CN 200580001707 A CN200580001707 A CN 200580001707A CN 100421224 C CN100421224 C CN 100421224C
- Authority
- CN
- China
- Prior art keywords
- platform
- grinding
- gan substrate
- grinding step
- lubricant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000000227 grinding Methods 0.000 title claims description 208
- 239000000314 lubricant Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims description 100
- 238000003754 machining Methods 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 19
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 229910003460 diamond Inorganic materials 0.000 claims description 12
- 239000010432 diamond Substances 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000000470 constituent Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000006061 abrasive grain Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 abstract description 6
- 239000003082 abrasive agent Substances 0.000 abstract 3
- 230000003746 surface roughness Effects 0.000 description 24
- 229910002601 GaN Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910001128 Sn alloy Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 235000011187 glycerol Nutrition 0.000 description 3
- VQHSOMBJVWLPSR-JVCRWLNRSA-N lactitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H]([C@H](O)CO)O[C@@H]1O[C@H](CO)[C@H](O)[C@H](O)[C@H]1O VQHSOMBJVWLPSR-JVCRWLNRSA-N 0.000 description 3
- 235000010448 lactitol Nutrition 0.000 description 3
- 239000000832 lactitol Substances 0.000 description 3
- 229960003451 lactitol Drugs 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000497192 Phyllocoptruta oleivora Species 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Abstract
Description
平台的圆周速度(m/min) | 平台的旋转速度(rpm) | 擦伤的条数(条) |
7 | 5 | 2 |
28 | 20 | 5 |
57 | 40 | 7 |
84 | 60 | 17 |
140 | 100 | 30 |
平台的圆周速度(m/min) | 平台的旋转速度(rpm) | 擦伤的条数(条) |
7 | 5 | 0 |
28 | 20 | 0 |
57 | 40 | 0 |
84 | 60 | 5 |
140 | 100 | 10 |
平台的构成材 | GaN基板的表面粗糙度Ra(nm) | 擦伤的条数(条) |
锡99质量%以上 | 1 | 0 |
锡70质量%,铅30质量% | 2 | 0 |
锡50质量%,铅50质量% | 5 | 0 |
锡30质量%,铅70质量% | 10 | 10以上 |
锡95质量%,铋5质量% | 1.5 | 0 |
锡97质量%,锑3质量% | 1.5 | 0 |
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP005497/2005 | 2005-01-12 | ||
JP2005005497A JP5065574B2 (ja) | 2005-01-12 | 2005-01-12 | GaN基板の研磨方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810086581XA Division CN101274419B (zh) | 2005-01-12 | 2005-12-28 | GaN基板的研磨方法 |
CN2008101454275A Division CN101350302B (zh) | 2005-01-12 | 2005-12-28 | GaN基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1906739A CN1906739A (zh) | 2007-01-31 |
CN100421224C true CN100421224C (zh) | 2008-09-24 |
Family
ID=36677555
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810086581XA Expired - Fee Related CN101274419B (zh) | 2005-01-12 | 2005-12-28 | GaN基板的研磨方法 |
CN2008101454275A Expired - Fee Related CN101350302B (zh) | 2005-01-12 | 2005-12-28 | GaN基板 |
CNB2005800017073A Active CN100421224C (zh) | 2005-01-12 | 2005-12-28 | GaN基板的研磨方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810086581XA Expired - Fee Related CN101274419B (zh) | 2005-01-12 | 2005-12-28 | GaN基板的研磨方法 |
CN2008101454275A Expired - Fee Related CN101350302B (zh) | 2005-01-12 | 2005-12-28 | GaN基板 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7452814B2 (zh) |
EP (1) | EP1814149B1 (zh) |
JP (1) | JP5065574B2 (zh) |
KR (1) | KR100858948B1 (zh) |
CN (3) | CN101274419B (zh) |
HK (1) | HK1100101A1 (zh) |
TW (1) | TW200633045A (zh) |
WO (1) | WO2006075527A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101484981B (zh) * | 2006-07-26 | 2013-03-27 | 弗赖贝格化合物原料有限公司 | 用于对ⅲ-n衬底进行平滑的方法 |
US7585772B2 (en) | 2006-07-26 | 2009-09-08 | Freiberger Compound Materials Gmbh | Process for smoothening III-N substrates |
TWI452617B (zh) * | 2006-07-26 | 2014-09-11 | Freiberger Compound Mat Gmbh | 平滑化第三族氮化物基材之方法 |
JP2008066355A (ja) * | 2006-09-05 | 2008-03-21 | Sumitomo Electric Ind Ltd | 3族窒化物基板の製造方法、3族窒化物基板、エピタキシャル層付き3族窒化物基板、3族窒化物デバイス、エピタキシャル層付き3族窒化物基板の製造方法、および3族窒化物デバイスの製造方法。 |
JP5353711B2 (ja) * | 2007-12-05 | 2013-11-27 | 株式会社リコー | Iii族窒化物結晶の結晶製造方法および結晶製造装置 |
JP4333820B1 (ja) | 2009-01-19 | 2009-09-16 | 住友電気工業株式会社 | 化合物半導体基板 |
DE102009025243B4 (de) | 2009-06-17 | 2011-11-17 | Siltronic Ag | Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium |
CN103506928B (zh) * | 2012-06-19 | 2016-02-10 | 上海硅酸盐研究所中试基地 | 超硬半导体材料抛光方法 |
US20160013085A1 (en) * | 2014-07-10 | 2016-01-14 | Applied Materials, Inc. | In-Situ Acoustic Monitoring of Chemical Mechanical Polishing |
CN107263301B (zh) * | 2017-06-26 | 2019-05-14 | 镓特半导体科技(上海)有限公司 | 一种研磨-化学机械抛光氮化镓晶圆片的方法 |
US11078380B2 (en) * | 2017-07-10 | 2021-08-03 | Entegris, Inc. | Hard abrasive particle-free polishing of hard materials |
CN107953154B (zh) * | 2017-12-27 | 2020-03-10 | 武汉华星光电半导体显示技术有限公司 | 玻璃基板的研磨方法及研磨装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62102970A (ja) * | 1985-10-31 | 1987-05-13 | Hitachi Metals Ltd | 硬質Snラツピング定盤 |
CN1312545A (zh) * | 2000-01-28 | 2001-09-12 | Tdk株式会社 | 用于抛光磁头浮动块的方法 |
JP2001322899A (ja) * | 2000-05-11 | 2001-11-20 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体基板及びその製造方法 |
JP2002064099A (ja) * | 2000-08-16 | 2002-02-28 | Nanotekku Machines:Kk | 埋め込み配線構造体の製造方法 |
CN1447485A (zh) * | 2002-03-26 | 2003-10-08 | 三洋电机株式会社 | 氮化物系半导体元件及其制造方法 |
JP2003305638A (ja) * | 2002-04-12 | 2003-10-28 | Fujitsu Ltd | 研磨装置及び研磨方法 |
JP2004281865A (ja) * | 2003-03-18 | 2004-10-07 | Namiki Precision Jewel Co Ltd | GaNの研磨方法及びGaN用研磨剤 |
CN1549357A (zh) * | 2003-05-06 | 2004-11-24 | ס�ѵ�����ҵ��ʽ���� | 氮化物半导体衬底和氮化物半导体衬底的加工方法 |
JP2004331686A (ja) * | 2003-04-30 | 2004-11-25 | Kyoeisha Chem Co Ltd | 水系研磨加工液 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09254024A (ja) * | 1996-03-18 | 1997-09-30 | Nittetsu Semiconductor Kk | 半導体ウェハの化学機械的研磨装置および化学機械的研磨方法 |
US5743788A (en) * | 1996-12-02 | 1998-04-28 | Motorola, Inc. | Platen coating structure for chemical mechanical polishing and method |
US6467537B1 (en) * | 2000-05-17 | 2002-10-22 | Carrier Corporation | Advanced starting control for multiple zone system |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
JP2003326453A (ja) * | 2002-05-01 | 2003-11-18 | Hitachi Ltd | 磁気ヘッドおよび磁気ディスク装置ならびに磁気ヘッドの製造方法および研磨装置 |
JP2004058220A (ja) | 2002-07-30 | 2004-02-26 | Tokyo Magnetic Printing Co Ltd | 仕上げ研磨用ラッピングオイル組成物および複合材の仕上げ研磨方法 |
JP3534115B1 (ja) * | 2003-04-02 | 2004-06-07 | 住友電気工業株式会社 | エッジ研磨した窒化物半導体基板とエッジ研磨したGaN自立基板及び窒化物半導体基板のエッジ加工方法 |
JP2004335646A (ja) | 2003-05-06 | 2004-11-25 | Sumitomo Electric Ind Ltd | GaN基板 |
JP4518746B2 (ja) * | 2003-05-06 | 2010-08-04 | 住友電気工業株式会社 | GaN基板 |
JP4155872B2 (ja) * | 2003-05-26 | 2008-09-24 | 一正 大西 | ラップ盤の製造方法 |
DE602006004241D1 (de) * | 2005-04-08 | 2009-01-29 | Ohara Kk | Trägermaterial und Polierverfahren dafür |
-
2005
- 2005-01-12 JP JP2005005497A patent/JP5065574B2/ja active Active
- 2005-12-28 WO PCT/JP2005/024057 patent/WO2006075527A1/ja active Application Filing
- 2005-12-28 EP EP05822594A patent/EP1814149B1/en active Active
- 2005-12-28 CN CN200810086581XA patent/CN101274419B/zh not_active Expired - Fee Related
- 2005-12-28 CN CN2008101454275A patent/CN101350302B/zh not_active Expired - Fee Related
- 2005-12-28 CN CNB2005800017073A patent/CN100421224C/zh active Active
- 2005-12-28 KR KR1020067012231A patent/KR100858948B1/ko not_active IP Right Cessation
-
2006
- 2006-01-03 TW TW095100221A patent/TW200633045A/zh unknown
- 2006-07-14 US US11/486,012 patent/US7452814B2/en not_active Expired - Fee Related
-
2007
- 2007-07-20 HK HK07107890.9A patent/HK1100101A1/xx not_active IP Right Cessation
-
2008
- 2008-10-20 US US12/254,360 patent/US20090045410A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62102970A (ja) * | 1985-10-31 | 1987-05-13 | Hitachi Metals Ltd | 硬質Snラツピング定盤 |
CN1312545A (zh) * | 2000-01-28 | 2001-09-12 | Tdk株式会社 | 用于抛光磁头浮动块的方法 |
JP2001322899A (ja) * | 2000-05-11 | 2001-11-20 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体基板及びその製造方法 |
JP2002064099A (ja) * | 2000-08-16 | 2002-02-28 | Nanotekku Machines:Kk | 埋め込み配線構造体の製造方法 |
CN1447485A (zh) * | 2002-03-26 | 2003-10-08 | 三洋电机株式会社 | 氮化物系半导体元件及其制造方法 |
JP2003305638A (ja) * | 2002-04-12 | 2003-10-28 | Fujitsu Ltd | 研磨装置及び研磨方法 |
JP2004281865A (ja) * | 2003-03-18 | 2004-10-07 | Namiki Precision Jewel Co Ltd | GaNの研磨方法及びGaN用研磨剤 |
JP2004331686A (ja) * | 2003-04-30 | 2004-11-25 | Kyoeisha Chem Co Ltd | 水系研磨加工液 |
CN1549357A (zh) * | 2003-05-06 | 2004-11-24 | ס�ѵ�����ҵ��ʽ���� | 氮化物半导体衬底和氮化物半导体衬底的加工方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2006075527A1 (ja) | 2006-07-20 |
CN101274419A (zh) | 2008-10-01 |
KR100858948B1 (ko) | 2008-09-18 |
CN1906739A (zh) | 2007-01-31 |
TW200633045A (en) | 2006-09-16 |
CN101350302A (zh) | 2009-01-21 |
CN101274419B (zh) | 2011-03-23 |
EP1814149A1 (en) | 2007-08-01 |
JP2006196609A (ja) | 2006-07-27 |
JP5065574B2 (ja) | 2012-11-07 |
US7452814B2 (en) | 2008-11-18 |
US20060283840A1 (en) | 2006-12-21 |
HK1100101A1 (en) | 2007-09-07 |
EP1814149B1 (en) | 2011-09-14 |
CN101350302B (zh) | 2011-01-19 |
US20090045410A1 (en) | 2009-02-19 |
KR20060135672A (ko) | 2006-12-29 |
EP1814149A4 (en) | 2009-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100421224C (zh) | GaN基板的研磨方法 | |
CN102205520B (zh) | 双面抛光半导体晶片的方法 | |
JP6106535B2 (ja) | SiC基板の製造方法 | |
US11781244B2 (en) | Seed crystal for single crystal 4H—SiC growth and method for processing the same | |
JP2011082520A (ja) | 半導体ウェハを研削する方法 | |
KR102230101B1 (ko) | GaN 단결정 재료의 연마 가공 방법 | |
JP2007061961A (ja) | ラッピング定盤の製作方法及びメカニカルラッピング方法 | |
CN101954620A (zh) | 双侧化学研磨半导体晶片的方法 | |
JP2006080329A (ja) | 化学的機械的研磨装置 | |
JP2006224266A (ja) | ワイヤソーを用いたインゴット切断方法 | |
JP5024305B2 (ja) | GaN基板の研磨方法 | |
RU2295798C2 (ru) | Способ полирования полупроводниковых материалов | |
JPH1058331A (ja) | ラッピング用超砥粒ホイール | |
JP6231334B2 (ja) | 薄板基板の研削加工方法およびそれに用いる研削加工装置 | |
JP5195966B2 (ja) | GaN基板の研磨方法 | |
CN1314514C (zh) | 化学机械研磨装置的晶圆载具结构 | |
JP2017136662A (ja) | 研磨パッド | |
JP2003291070A (ja) | ラッピング用ホイール | |
JP2003321672A (ja) | 研磨剤及び研磨方法 | |
JPH1044027A (ja) | 両面ラップ盤およびその製造方法 | |
JP2001030156A (ja) | ドレッシング装置、研磨装置および研磨方法 | |
JP2000127023A (ja) | 半導体の研磨方法及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1100101 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1100101 Country of ref document: HK |
|
TR01 | Transfer of patent right |
Effective date of registration: 20231221 Address after: Tokyo, Japan Patentee after: MITSUBISHI CHEMICAL Corp. Address before: Osaka, Japan Patentee before: SUMITOMO ELECTRIC INDUSTRIES, Ltd. |
|
TR01 | Transfer of patent right |