HK1100101A1 - Method for abrasing gan substrate gan - Google Patents

Method for abrasing gan substrate gan

Info

Publication number
HK1100101A1
HK1100101A1 HK07107890.9A HK07107890A HK1100101A1 HK 1100101 A1 HK1100101 A1 HK 1100101A1 HK 07107890 A HK07107890 A HK 07107890A HK 1100101 A1 HK1100101 A1 HK 1100101A1
Authority
HK
Hong Kong
Prior art keywords
gan
abrasing
substrate
gan substrate
substrate gan
Prior art date
Application number
HK07107890.9A
Other languages
English (en)
Inventor
Naoki Matsumoto
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of HK1100101A1 publication Critical patent/HK1100101A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
HK07107890.9A 2005-01-12 2007-07-20 Method for abrasing gan substrate gan HK1100101A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005005497A JP5065574B2 (ja) 2005-01-12 2005-01-12 ＧａＮ基板の研磨方法
PCT/JP2005/024057 WO2006075527A1 (ja) 2005-01-12 2005-12-28 ＧａＮ基板の研磨方法

Publications (1)

Publication Number Publication Date
HK1100101A1 true HK1100101A1 (en) 2007-09-07

Family

ID=36677555

Family Applications (1)

Application Number Title Priority Date Filing Date
HK07107890.9A HK1100101A1 (en) 2005-01-12 2007-07-20 Method for abrasing gan substrate gan

Country Status (8)

Country Link
US (2) US7452814B2 (zh)
EP (1) EP1814149B1 (zh)
JP (1) JP5065574B2 (zh)
KR (1) KR100858948B1 (zh)
CN (3) CN101274419B (zh)
HK (1) HK1100101A1 (zh)
TW (1) TW200633045A (zh)
WO (1) WO2006075527A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7585772B2 (en) 2006-07-26 2009-09-08 Freiberger Compound Materials Gmbh Process for smoothening III-N substrates
TWI452617B (zh) * 2006-07-26 2014-09-11 Freiberger Compound Mat Gmbh 平滑化第三族氮化物基材之方法
WO2008011897A1 (de) * 2006-07-26 2008-01-31 Freiberger Compound Materials Gmbh Verfahren zum glätten von iii-n-substraten
JP2008066355A (ja) * 2006-09-05 2008-03-21 Sumitomo Electric Ind Ltd ３族窒化物基板の製造方法、３族窒化物基板、エピタキシャル層付き３族窒化物基板、３族窒化物デバイス、エピタキシャル層付き３族窒化物基板の製造方法、および３族窒化物デバイスの製造方法。
US8916124B2 (en) * 2007-12-05 2014-12-23 Ricoh Company, Ltd. Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same
JP4333820B1 (ja) 2009-01-19 2009-09-16 住友電気工業株式会社 化合物半導体基板
DE102009025243B4 (de) 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
CN103506928B (zh) * 2012-06-19 2016-02-10 上海硅酸盐研究所中试基地 超硬半导体材料抛光方法
US20160013085A1 (en) * 2014-07-10 2016-01-14 Applied Materials, Inc. In-Situ Acoustic Monitoring of Chemical Mechanical Polishing
CN107263301B (zh) * 2017-06-26 2019-05-14 镓特半导体科技（上海）有限公司 一种研磨-化学机械抛光氮化镓晶圆片的方法
US11078380B2 (en) * 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
CN107953154B (zh) * 2017-12-27 2020-03-10 武汉华星光电半导体显示技术有限公司 玻璃基板的研磨方法及研磨装置

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JPS62102970A (ja) * 1985-10-31 1987-05-13 Hitachi Metals Ltd 硬質Ｓｎラツピング定盤
JPH09254024A (ja) * 1996-03-18 1997-09-30 Nittetsu Semiconductor Kk 半導体ウェハの化学機械的研磨装置および化学機械的研磨方法
US5743788A (en) * 1996-12-02 1998-04-28 Motorola, Inc. Platen coating structure for chemical mechanical polishing and method
JP2001205556A (ja) * 2000-01-28 2001-07-31 Tdk Corp 磁気ヘッドスライダの研磨方法
JP2001322899A (ja) * 2000-05-11 2001-11-20 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体基板及びその製造方法
US6467537B1 (en) * 2000-05-17 2002-10-22 Carrier Corporation Advanced starting control for multiple zone system
JP2002064099A (ja) * 2000-08-16 2002-02-28 Nanotekku Machines:Kk 埋め込み配線構造体の製造方法
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
US6791120B2 (en) * 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP2003305638A (ja) * 2002-04-12 2003-10-28 Fujitsu Ltd 研磨装置及び研磨方法
JP2003326453A (ja) * 2002-05-01 2003-11-18 Hitachi Ltd 磁気ヘッドおよび磁気ディスク装置ならびに磁気ヘッドの製造方法および研磨装置
JP2004058220A (ja) 2002-07-30 2004-02-26 Tokyo Magnetic Printing Co Ltd 仕上げ研磨用ラッピングオイル組成物および複合材の仕上げ研磨方法
JP2004281865A (ja) * 2003-03-18 2004-10-07 Namiki Precision Jewel Co Ltd ＧａＮの研磨方法及びＧａＮ用研磨剤
JP3534115B1 (ja) * 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
JP4363890B2 (ja) * 2003-04-30 2009-11-11 共栄社化学株式会社 水系研磨加工液
JP2004335646A (ja) 2003-05-06 2004-11-25 Sumitomo Electric Ind Ltd ＧａＮ基板
JP4518746B2 (ja) * 2003-05-06 2010-08-04 住友電気工業株式会社 ＧａＮ基板
KR100550491B1 (ko) 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
JP4155872B2 (ja) * 2003-05-26 2008-09-24 一正 大西 ラップ盤の製造方法
ATE417700T1 (de) * 2005-04-08 2009-01-15 Ohara Kk Trägermaterial und polierverfahren dafür

Also Published As

Publication number Publication date
WO2006075527A1 (ja) 2006-07-20
TW200633045A (en) 2006-09-16
US20060283840A1 (en) 2006-12-21
KR20060135672A (ko) 2006-12-29
EP1814149A4 (en) 2009-04-29
CN101274419A (zh) 2008-10-01
EP1814149B1 (en) 2011-09-14
EP1814149A1 (en) 2007-08-01
CN100421224C (zh) 2008-09-24
JP2006196609A (ja) 2006-07-27
US7452814B2 (en) 2008-11-18
JP5065574B2 (ja) 2012-11-07
KR100858948B1 (ko) 2008-09-18
CN101350302B (zh) 2011-01-19
CN1906739A (zh) 2007-01-31
US20090045410A1 (en) 2009-02-19
CN101274419B (zh) 2011-03-23
CN101350302A (zh) 2009-01-21

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20121228