CN100414644C - 电压发生电路 - Google Patents

电压发生电路 Download PDF

Info

Publication number
CN100414644C
CN100414644C CNB2004100446502A CN200410044650A CN100414644C CN 100414644 C CN100414644 C CN 100414644C CN B2004100446502 A CNB2004100446502 A CN B2004100446502A CN 200410044650 A CN200410044650 A CN 200410044650A CN 100414644 C CN100414644 C CN 100414644C
Authority
CN
China
Prior art keywords
voltage
node
control signal
level
vcc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100446502A
Other languages
English (en)
Chinese (zh)
Other versions
CN1551236A (zh
Inventor
飞田洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1551236A publication Critical patent/CN1551236A/zh
Application granted granted Critical
Publication of CN100414644C publication Critical patent/CN100414644C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNB2004100446502A 2003-05-19 2004-05-19 电压发生电路 Expired - Fee Related CN100414644C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP140079/2003 2003-05-19
JP2003140079 2003-05-19
JP2003419716A JP4393182B2 (ja) 2003-05-19 2003-12-17 電圧発生回路
JP419716/2003 2003-12-17

Publications (2)

Publication Number Publication Date
CN1551236A CN1551236A (zh) 2004-12-01
CN100414644C true CN100414644C (zh) 2008-08-27

Family

ID=33455503

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100446502A Expired - Fee Related CN100414644C (zh) 2003-05-19 2004-05-19 电压发生电路

Country Status (6)

Country Link
US (2) US20040232974A1 (enExample)
JP (1) JP4393182B2 (enExample)
KR (1) KR100538021B1 (enExample)
CN (1) CN100414644C (enExample)
DE (1) DE102004024612B4 (enExample)
TW (1) TWI240276B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004038919A1 (ja) * 2002-10-24 2004-05-06 Matsushita Electric Industrial Co., Ltd. 電圧発生回路、電圧発生装置及びこれを用いた半導体装置、並びにその駆動方法
US7248096B2 (en) * 2004-11-22 2007-07-24 Stmicroelectronics S.R.L. Charge pump circuit with dynamic biasing of pass transistors
US7317347B2 (en) * 2004-11-22 2008-01-08 Stmicroelectronics S.R.L. Charge pump circuit with reuse of accumulated electrical charge
JP4957913B2 (ja) 2005-11-17 2012-06-20 日本電気株式会社 半導体集積回路
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
KR101230313B1 (ko) 2006-07-05 2013-02-06 재단법인서울대학교산학협력재단 레벨 시프터 및 그의 구동 방법
JP4929999B2 (ja) * 2006-11-17 2012-05-09 セイコーエプソン株式会社 昇圧回路、その制御方法および電圧発生回路。
US7446596B1 (en) * 2007-05-25 2008-11-04 Atmel Corporation Low voltage charge pump
JP4969322B2 (ja) * 2007-06-01 2012-07-04 三菱電機株式会社 電圧発生回路およびそれを備える画像表示装置
US7808301B2 (en) * 2007-07-26 2010-10-05 Macronix International Co., Ltd. Multiple-stage charge pump circuit with charge recycle circuit
JP5142861B2 (ja) * 2008-07-09 2013-02-13 パナソニック株式会社 内部電圧発生回路
JP2011150482A (ja) * 2010-01-20 2011-08-04 Sanyo Electric Co Ltd 電源回路
KR101736453B1 (ko) 2011-01-05 2017-05-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 워드라인 전압 발생 방법
KR101764125B1 (ko) * 2010-12-15 2017-08-02 삼성전자주식회사 음의 고전압 발생기 및 음의 고전압 발생기를 포함하는 비휘발성 메모리 장치
US8897073B2 (en) * 2012-09-14 2014-11-25 Freescale Semiconductor, Inc. NVM with charge pump and method therefor
WO2017187553A1 (ja) * 2016-04-27 2017-11-02 東芝三菱電機産業システム株式会社 無停電電源装置
US10672453B2 (en) * 2017-12-22 2020-06-02 Nanya Technology Corporation Voltage system providing pump voltage for memory device and method for operating the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521547A (en) * 1992-06-24 1996-05-28 Nec Corporation Boost voltage generating circuit
CN1043694C (zh) * 1992-03-31 1999-06-16 三星电子株式会社 内源电压发生电路
CN1238483A (zh) * 1998-06-05 1999-12-15 日本电气株式会社 带隙参考电压发生电路
US6208196B1 (en) * 1999-03-02 2001-03-27 Maxim Integrated Products, Inc. Current mode charge pumps
US20010000691A1 (en) * 1998-04-09 2001-05-03 Hiroki Fujisawa Semiconductor integrated circuit device
US20020122324A1 (en) * 2001-02-16 2002-09-05 Shi-Ho Kim High voltage generating charge pump circuit
US6501325B1 (en) * 2001-01-18 2002-12-31 Cypress Semiconductor Corp. Low voltage supply higher efficiency cross-coupled high voltage charge pumps

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2820331B2 (ja) * 1991-06-21 1998-11-05 シャープ株式会社 チャージポンプ回路
DE19601369C1 (de) * 1996-01-16 1997-04-10 Siemens Ag Vorrichtung zur Spannungsvervielfachung, insb. verwendbar zur Erzeugung der Löschspannung für ein EEPROM
EP0855788B1 (en) * 1997-01-23 2005-06-22 STMicroelectronics S.r.l. NMOS negative charge pump
JP3554497B2 (ja) * 1998-12-08 2004-08-18 シャープ株式会社 チャージポンプ回路
TW564434B (en) * 2002-02-22 2003-12-01 Ememory Technology Inc Charge pump circuit without body effects

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1043694C (zh) * 1992-03-31 1999-06-16 三星电子株式会社 内源电压发生电路
US5521547A (en) * 1992-06-24 1996-05-28 Nec Corporation Boost voltage generating circuit
US20010000691A1 (en) * 1998-04-09 2001-05-03 Hiroki Fujisawa Semiconductor integrated circuit device
CN1238483A (zh) * 1998-06-05 1999-12-15 日本电气株式会社 带隙参考电压发生电路
US6208196B1 (en) * 1999-03-02 2001-03-27 Maxim Integrated Products, Inc. Current mode charge pumps
US6501325B1 (en) * 2001-01-18 2002-12-31 Cypress Semiconductor Corp. Low voltage supply higher efficiency cross-coupled high voltage charge pumps
US20020122324A1 (en) * 2001-02-16 2002-09-05 Shi-Ho Kim High voltage generating charge pump circuit

Also Published As

Publication number Publication date
DE102004024612A1 (de) 2004-12-23
TW200426834A (en) 2004-12-01
US20060028266A1 (en) 2006-02-09
JP2005006489A (ja) 2005-01-06
JP4393182B2 (ja) 2010-01-06
KR20040100933A (ko) 2004-12-02
US7365591B2 (en) 2008-04-29
US20040232974A1 (en) 2004-11-25
KR100538021B1 (ko) 2005-12-21
TWI240276B (en) 2005-09-21
CN1551236A (zh) 2004-12-01
DE102004024612B4 (de) 2020-03-05

Similar Documents

Publication Publication Date Title
CN100414644C (zh) 电压发生电路
US6483728B1 (en) Charge pump circuit
US7626883B2 (en) Semiconductor memory device
TW594788B (en) Word line driver for a semiconductor memory device
KR101504587B1 (ko) 음 전원전압 발생회로 및 이를 포함하는 반도체 집적회로
US6198340B1 (en) High efficiency CMOS pump circuit
KR100419816B1 (ko) 신호 전위 변환 회로
JP3540652B2 (ja) チャージポンプ式昇圧回路
JP2010130781A (ja) チャージポンプ回路及びこれを備える半導体記憶装置
JP2010119226A (ja) チャージポンプ回路
US7714636B2 (en) Charge pump circuit and cell thereof
US20150214837A1 (en) Charge pump circuit
US8699292B2 (en) Semiconductor device
JP2005285163A (ja) 電源回路及び該電源回路を備えた半導体記憶装置
CN111162674B (zh) 电荷泵和包括电荷泵的存储器件
KR100470888B1 (ko) 비휘발성 반도체 기억 장치
US7394298B2 (en) Stepwise drivers for DC/DC converters
JP4674305B2 (ja) 集積回路装置のデータバス電荷共有技術
JP5426357B2 (ja) 昇圧回路、昇圧方法、半導体装置
KR101027178B1 (ko) 전류 소비 감소를 위한 메모리 시스템 및 관련 방법
KR20020057053A (ko) 반도체 메모리장치의 고 효율 펌프회로
JP2005237164A (ja) 電源回路
JP3804765B2 (ja) 充電回路およびそれを用いた半導体記憶装置
JP3718040B2 (ja) 出力電圧発生回路装置
US20250350201A1 (en) Charge Pump Circuits and Methods for Operating The Same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080827

Termination date: 20180519