TWI240276B - Voltage generating circuit - Google Patents
Voltage generating circuit Download PDFInfo
- Publication number
- TWI240276B TWI240276B TW093109720A TW93109720A TWI240276B TW I240276 B TWI240276 B TW I240276B TW 093109720 A TW093109720 A TW 093109720A TW 93109720 A TW93109720 A TW 93109720A TW I240276 B TWI240276 B TW I240276B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- node
- level
- internal
- control signal
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 59
- 230000005611 electricity Effects 0.000 claims description 32
- 230000009471 action Effects 0.000 claims description 28
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- CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 1
- 102100022749 Aminopeptidase N Human genes 0.000 description 1
- 101100279436 Caenorhabditis elegans egg-2 gene Proteins 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 101000757160 Homo sapiens Aminopeptidase N Proteins 0.000 description 1
- 101150082193 NDB1 gene Proteins 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 241000237509 Patinopecten sp. Species 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 241000112598 Pseudoblennius percoides Species 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
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- 231100000989 no adverse effect Toxicity 0.000 description 1
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- 238000005086 pumping Methods 0.000 description 1
- APTZNLHMIGJTEW-UHFFFAOYSA-N pyraflufen-ethyl Chemical compound C1=C(Cl)C(OCC(=O)OCC)=CC(C=2C(=C(OC(F)F)N(C)N=2)Cl)=C1F APTZNLHMIGJTEW-UHFFFAOYSA-N 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003140079 | 2003-05-19 | ||
| JP2003419716A JP4393182B2 (ja) | 2003-05-19 | 2003-12-17 | 電圧発生回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200426834A TW200426834A (en) | 2004-12-01 |
| TWI240276B true TWI240276B (en) | 2005-09-21 |
Family
ID=33455503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093109720A TWI240276B (en) | 2003-05-19 | 2004-04-08 | Voltage generating circuit |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20040232974A1 (enExample) |
| JP (1) | JP4393182B2 (enExample) |
| KR (1) | KR100538021B1 (enExample) |
| CN (1) | CN100414644C (enExample) |
| DE (1) | DE102004024612B4 (enExample) |
| TW (1) | TWI240276B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI594249B (zh) * | 2012-09-14 | 2017-08-01 | 飛思卡爾半導體公司 | 具有充電泵浦之非揮發性記憶體及其方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004038919A1 (ja) * | 2002-10-24 | 2004-05-06 | Matsushita Electric Industrial Co., Ltd. | 電圧発生回路、電圧発生装置及びこれを用いた半導体装置、並びにその駆動方法 |
| US7248096B2 (en) * | 2004-11-22 | 2007-07-24 | Stmicroelectronics S.R.L. | Charge pump circuit with dynamic biasing of pass transistors |
| US7317347B2 (en) * | 2004-11-22 | 2008-01-08 | Stmicroelectronics S.R.L. | Charge pump circuit with reuse of accumulated electrical charge |
| JP4957913B2 (ja) | 2005-11-17 | 2012-06-20 | 日本電気株式会社 | 半導体集積回路 |
| US7443202B2 (en) * | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
| KR101230313B1 (ko) | 2006-07-05 | 2013-02-06 | 재단법인서울대학교산학협력재단 | 레벨 시프터 및 그의 구동 방법 |
| JP4929999B2 (ja) * | 2006-11-17 | 2012-05-09 | セイコーエプソン株式会社 | 昇圧回路、その制御方法および電圧発生回路。 |
| US7446596B1 (en) * | 2007-05-25 | 2008-11-04 | Atmel Corporation | Low voltage charge pump |
| JP4969322B2 (ja) * | 2007-06-01 | 2012-07-04 | 三菱電機株式会社 | 電圧発生回路およびそれを備える画像表示装置 |
| US7808301B2 (en) * | 2007-07-26 | 2010-10-05 | Macronix International Co., Ltd. | Multiple-stage charge pump circuit with charge recycle circuit |
| JP5142861B2 (ja) * | 2008-07-09 | 2013-02-13 | パナソニック株式会社 | 内部電圧発生回路 |
| JP2011150482A (ja) * | 2010-01-20 | 2011-08-04 | Sanyo Electric Co Ltd | 電源回路 |
| KR101736453B1 (ko) | 2011-01-05 | 2017-05-16 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 워드라인 전압 발생 방법 |
| KR101764125B1 (ko) * | 2010-12-15 | 2017-08-02 | 삼성전자주식회사 | 음의 고전압 발생기 및 음의 고전압 발생기를 포함하는 비휘발성 메모리 장치 |
| WO2017187553A1 (ja) * | 2016-04-27 | 2017-11-02 | 東芝三菱電機産業システム株式会社 | 無停電電源装置 |
| US10672453B2 (en) * | 2017-12-22 | 2020-06-02 | Nanya Technology Corporation | Voltage system providing pump voltage for memory device and method for operating the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2820331B2 (ja) * | 1991-06-21 | 1998-11-05 | シャープ株式会社 | チャージポンプ回路 |
| KR950008453B1 (ko) * | 1992-03-31 | 1995-07-31 | 삼성전자주식회사 | 내부전원전압 발생회로 |
| JP2755047B2 (ja) * | 1992-06-24 | 1998-05-20 | 日本電気株式会社 | 昇圧電位発生回路 |
| DE19601369C1 (de) * | 1996-01-16 | 1997-04-10 | Siemens Ag | Vorrichtung zur Spannungsvervielfachung, insb. verwendbar zur Erzeugung der Löschspannung für ein EEPROM |
| EP0855788B1 (en) * | 1997-01-23 | 2005-06-22 | STMicroelectronics S.r.l. | NMOS negative charge pump |
| JP3853513B2 (ja) * | 1998-04-09 | 2006-12-06 | エルピーダメモリ株式会社 | ダイナミック型ｒａｍ |
| JP3476363B2 (ja) * | 1998-06-05 | 2003-12-10 | 日本電気株式会社 | バンドギャップ型基準電圧発生回路 |
| JP3554497B2 (ja) * | 1998-12-08 | 2004-08-18 | シャープ株式会社 | チャージポンプ回路 |
| US6208196B1 (en) * | 1999-03-02 | 2001-03-27 | Maxim Integrated Products, Inc. | Current mode charge pumps |
| US6501325B1 (en) * | 2001-01-18 | 2002-12-31 | Cypress Semiconductor Corp. | Low voltage supply higher efficiency cross-coupled high voltage charge pumps |
| US6661682B2 (en) * | 2001-02-16 | 2003-12-09 | Imec (Interuniversitair Microelectronica Centrum) | High voltage generating charge pump circuit |
| TW564434B (en) * | 2002-02-22 | 2003-12-01 | Ememory Technology Inc | Charge pump circuit without body effects |
-
2003
- 2003-12-17 JP JP2003419716A patent/JP4393182B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-08 TW TW093109720A patent/TWI240276B/zh not_active IP Right Cessation
- 2004-04-13 US US10/822,826 patent/US20040232974A1/en not_active Abandoned
- 2004-05-17 KR KR10-2004-0034658A patent/KR100538021B1/ko not_active Expired - Fee Related
- 2004-05-18 DE DE102004024612.2A patent/DE102004024612B4/de not_active Expired - Lifetime
- 2004-05-19 CN CNB2004100446502A patent/CN100414644C/zh not_active Expired - Fee Related
-
2005
- 2005-10-20 US US11/253,733 patent/US7365591B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI594249B (zh) * | 2012-09-14 | 2017-08-01 | 飛思卡爾半導體公司 | 具有充電泵浦之非揮發性記憶體及其方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100414644C (zh) | 2008-08-27 |
| DE102004024612B4 (de) | 2020-03-05 |
| KR20040100933A (ko) | 2004-12-02 |
| US20040232974A1 (en) | 2004-11-25 |
| US7365591B2 (en) | 2008-04-29 |
| KR100538021B1 (ko) | 2005-12-21 |
| DE102004024612A1 (de) | 2004-12-23 |
| JP4393182B2 (ja) | 2010-01-06 |
| TW200426834A (en) | 2004-12-01 |
| CN1551236A (zh) | 2004-12-01 |
| US20060028266A1 (en) | 2006-02-09 |
| JP2005006489A (ja) | 2005-01-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |