CN100378804C - 利用薄钌间隔层和高磁场退火的增强反平行被钉扎传感器 - Google Patents

利用薄钌间隔层和高磁场退火的增强反平行被钉扎传感器 Download PDF

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Publication number
CN100378804C
CN100378804C CNB2006100051812A CN200610005181A CN100378804C CN 100378804 C CN100378804 C CN 100378804C CN B2006100051812 A CNB2006100051812 A CN B2006100051812A CN 200610005181 A CN200610005181 A CN 200610005181A CN 100378804 C CN100378804 C CN 100378804C
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China
Prior art keywords
ruthenium
spacer
layer
sensor
antiparallel
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Expired - Fee Related
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CNB2006100051812A
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English (en)
Chinese (zh)
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CN1815561A (zh
Inventor
李文扬
李晋山
丹尼尔·莫里
西冈浩一
田岛康成
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HGST Netherlands BV
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Hitachi Global Storage Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
CNB2006100051812A 2005-02-01 2006-01-13 利用薄钌间隔层和高磁场退火的增强反平行被钉扎传感器 Expired - Fee Related CN100378804C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/048,406 2005-02-01
US11/048,406 US7408747B2 (en) 2005-02-01 2005-02-01 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing

Publications (2)

Publication Number Publication Date
CN1815561A CN1815561A (zh) 2006-08-09
CN100378804C true CN100378804C (zh) 2008-04-02

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Family Applications (1)

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CNB2006100051812A Expired - Fee Related CN100378804C (zh) 2005-02-01 2006-01-13 利用薄钌间隔层和高磁场退火的增强反平行被钉扎传感器

Country Status (6)

Country Link
US (2) US7408747B2 (https=)
EP (1) EP1688923A3 (https=)
JP (1) JP2006216945A (https=)
KR (1) KR20060088482A (https=)
CN (1) CN100378804C (https=)
SG (1) SG124377A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
KR101544198B1 (ko) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
CN102901940B (zh) 2012-10-26 2015-07-15 苏州大学 基于磁温差电效应的传感器元件及其实现方法
US20150213815A1 (en) * 2014-01-29 2015-07-30 Seagate Technology Llc Synthetic antiferromagnetic reader
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9502640B1 (en) 2015-11-03 2016-11-22 International Business Machines Corporation Structure and method to reduce shorting in STT-MRAM device
US9508367B1 (en) 2016-02-03 2016-11-29 International Business Machines Corporation Tunnel magnetoresistive sensor having conductive ceramic layers
US9747931B1 (en) 2016-08-16 2017-08-29 International Business Machines Corporation Tunnel magnetoresistive sensor having stabilized magnetic shield and dielectric gap sensor
US11217744B2 (en) * 2019-12-10 2022-01-04 HeFeChip Corporation Limited Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the same
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856897A (en) * 1996-11-27 1999-01-05 International Business Machines Corporation Self-biased dual spin valve sensor
US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
US6620530B1 (en) * 2001-01-26 2003-09-16 Headway Technologies, Inc. Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it
CN1180400C (zh) * 1995-09-11 2004-12-15 国际商业机器公司 磁盘记录系统和双磁电阻读传感器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3212569B2 (ja) * 1999-01-27 2001-09-25 アルプス電気株式会社 デュアルスピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びデュアルスピンバルブ型薄膜磁気素子の製造方法
US6522507B1 (en) 2000-05-12 2003-02-18 Headway Technologies, Inc. Single top spin valve heads for ultra-high recording density
US6521098B1 (en) * 2000-08-31 2003-02-18 International Business Machines Corporation Fabrication method for spin valve sensor with insulating and conducting seed layers
JP2002117508A (ja) 2000-10-06 2002-04-19 Hitachi Ltd 磁気ヘッドおよびその製造方法
JP3890893B2 (ja) * 2000-12-28 2007-03-07 日本電気株式会社 スピントンネル磁気抵抗効果膜及び素子及びそれを用いた磁気抵抗センサー、及び磁気装置及びその製造方法
JP2002359415A (ja) * 2001-05-31 2002-12-13 Sony Corp 面垂直電流型磁気抵抗効果素子、その製造方法、再生ヘッド、及びこれを搭載した情報記憶装置
JP2003086866A (ja) 2001-09-13 2003-03-20 Anelva Corp スピンバルブ型巨大磁気抵抗薄膜の製造方法
US6775903B2 (en) * 2001-09-17 2004-08-17 Headway Technolog Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer
JP2003242612A (ja) 2002-02-12 2003-08-29 Fujitsu Ltd フラックスガイド型素子、及び、それを有するヘッド並びにドライブ
US7161771B2 (en) * 2002-04-02 2007-01-09 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with a longitudinal bias stack
US6822838B2 (en) * 2002-04-02 2004-11-23 International Business Machines Corporation Dual magnetic tunnel junction sensor with a longitudinal bias stack
JP3973495B2 (ja) * 2002-06-19 2007-09-12 アルプス電気株式会社 磁気ヘッド及びその製造方法
CN101114694A (zh) * 2002-11-26 2008-01-30 株式会社东芝 磁单元和磁存储器
US7042684B2 (en) * 2003-06-12 2006-05-09 Headway Technologies, Inc. Structure/method to form bottom spin valves for ultra-high density
JPWO2005008799A1 (ja) 2003-07-18 2006-09-07 富士通株式会社 Ｃｐｐ磁気抵抗効果素子及びその製造方法、磁気ヘッド、磁気記憶装置
US7068478B2 (en) 2003-07-31 2006-06-27 Headway Technologies, Inc. CPP GMR read head
US20050264952A1 (en) 2004-05-28 2005-12-01 Fujitsu Limited Magneto-resistive element, magnetic head and magnetic storage apparatus
US7351483B2 (en) * 2004-11-10 2008-04-01 International Business Machines Corporation Magnetic tunnel junctions using amorphous materials as reference and free layers
US7367109B2 (en) * 2005-01-31 2008-05-06 Hitachi Global Storage Technologies Netherlands B.V. Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment
US7606009B2 (en) * 2006-03-15 2009-10-20 Hitachi Global Storage Technologies Netherlands B.V. Read sensor stabilized by bidirectional anisotropy
US7595520B2 (en) * 2006-07-31 2009-09-29 Magic Technologies, Inc. Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1180400C (zh) * 1995-09-11 2004-12-15 国际商业机器公司 磁盘记录系统和双磁电阻读传感器
US5856897A (en) * 1996-11-27 1999-01-05 International Business Machines Corporation Self-biased dual spin valve sensor
US6153320A (en) * 1999-05-05 2000-11-28 International Business Machines Corporation Magnetic devices with laminated ferromagnetic structures formed with improved antiferromagnetically coupling films
US6620530B1 (en) * 2001-01-26 2003-09-16 Headway Technologies, Inc. Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it

Also Published As

Publication number Publication date
JP2006216945A (ja) 2006-08-17
US7848064B2 (en) 2010-12-07
US20060171083A1 (en) 2006-08-03
KR20060088482A (ko) 2006-08-04
EP1688923A3 (en) 2007-11-07
CN1815561A (zh) 2006-08-09
EP1688923A2 (en) 2006-08-09
SG124377A1 (en) 2006-08-30
US7408747B2 (en) 2008-08-05
US20080285182A1 (en) 2008-11-20

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