JP2006216945A - 薄いルテニウムスペーサおよび強磁場熱処理を用いた反平行固定磁化層を有するセンサ - Google Patents

薄いルテニウムスペーサおよび強磁場熱処理を用いた反平行固定磁化層を有するセンサ Download PDF

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Publication number
JP2006216945A
JP2006216945A JP2006018412A JP2006018412A JP2006216945A JP 2006216945 A JP2006216945 A JP 2006216945A JP 2006018412 A JP2006018412 A JP 2006018412A JP 2006018412 A JP2006018412 A JP 2006018412A JP 2006216945 A JP2006216945 A JP 2006216945A
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JP
Japan
Prior art keywords
sensor
ruthenium
spacer
magnetic field
layer
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Pending
Application number
JP2006018412A
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English (en)
Japanese (ja)
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JP2006216945A5 (https=
Inventor
Wen-Yaung Lee
文揚 李
Jinshan Li
晋山 李
Daniele Mauri
ダニエル・マウリ
Koichi Nishioka
浩一 西岡
Yasunari Tajima
康成 田島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HGST Netherlands BV
HGST Inc
Original Assignee
Hitachi Global Storage Technologies Netherlands BV
Hitachi Global Storage Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Hitachi Global Storage Technologies Netherlands BV, Hitachi Global Storage Technologies Inc filed Critical Hitachi Global Storage Technologies Netherlands BV
Publication of JP2006216945A publication Critical patent/JP2006216945A/ja
Publication of JP2006216945A5 publication Critical patent/JP2006216945A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
JP2006018412A 2005-02-01 2006-01-27 薄いルテニウムスペーサおよび強磁場熱処理を用いた反平行固定磁化層を有するセンサ Pending JP2006216945A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/048,406 US7408747B2 (en) 2005-02-01 2005-02-01 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing

Publications (2)

Publication Number Publication Date
JP2006216945A true JP2006216945A (ja) 2006-08-17
JP2006216945A5 JP2006216945A5 (https=) 2009-02-05

Family

ID=36424595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006018412A Pending JP2006216945A (ja) 2005-02-01 2006-01-27 薄いルテニウムスペーサおよび強磁場熱処理を用いた反平行固定磁化層を有するセンサ

Country Status (6)

Country Link
US (2) US7408747B2 (https=)
EP (1) EP1688923A3 (https=)
JP (1) JP2006216945A (https=)
KR (1) KR20060088482A (https=)
CN (1) CN100378804C (https=)
SG (1) SG124377A1 (https=)

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US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7435484B2 (en) * 2006-09-01 2008-10-14 Asm Japan K.K. Ruthenium thin film-formed structure
KR101544198B1 (ko) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
CN102901940B (zh) 2012-10-26 2015-07-15 苏州大学 基于磁温差电效应的传感器元件及其实现方法
US20150213815A1 (en) * 2014-01-29 2015-07-30 Seagate Technology Llc Synthetic antiferromagnetic reader
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9502640B1 (en) 2015-11-03 2016-11-22 International Business Machines Corporation Structure and method to reduce shorting in STT-MRAM device
US9508367B1 (en) 2016-02-03 2016-11-29 International Business Machines Corporation Tunnel magnetoresistive sensor having conductive ceramic layers
US9747931B1 (en) 2016-08-16 2017-08-29 International Business Machines Corporation Tunnel magnetoresistive sensor having stabilized magnetic shield and dielectric gap sensor
US11217744B2 (en) * 2019-12-10 2022-01-04 HeFeChip Corporation Limited Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the same
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착

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Also Published As

Publication number Publication date
CN100378804C (zh) 2008-04-02
US7848064B2 (en) 2010-12-07
US20060171083A1 (en) 2006-08-03
KR20060088482A (ko) 2006-08-04
EP1688923A3 (en) 2007-11-07
CN1815561A (zh) 2006-08-09
EP1688923A2 (en) 2006-08-09
SG124377A1 (en) 2006-08-30
US7408747B2 (en) 2008-08-05
US20080285182A1 (en) 2008-11-20

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