CN100374938C - 液晶显示器件 - Google Patents
液晶显示器件 Download PDFInfo
- Publication number
- CN100374938C CN100374938C CNB031201628A CN03120162A CN100374938C CN 100374938 C CN100374938 C CN 100374938C CN B031201628 A CNB031201628 A CN B031201628A CN 03120162 A CN03120162 A CN 03120162A CN 100374938 C CN100374938 C CN 100374938C
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- substrate
- tft
- opening portion
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 160
- 239000000758 substrate Substances 0.000 claims abstract description 163
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 239000010408 film Substances 0.000 claims description 211
- 239000010410 layer Substances 0.000 claims description 169
- 239000011229 interlayer Substances 0.000 claims description 43
- 239000010409 thin film Substances 0.000 claims description 43
- 230000003287 optical effect Effects 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 19
- 238000007639 printing Methods 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 26
- 239000012535 impurity Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 239000000565 sealant Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 238000007669 thermal treatment Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
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- 238000010438 heat treatment Methods 0.000 description 5
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910018125 Al-Si Inorganic materials 0.000 description 4
- 229910018520 Al—Si Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
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- 229910052718 tin Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
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- 229920002647 polyamide Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
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- 239000011368 organic material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000001146 hypoxic effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000003182 parenteral nutrition solution Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/1396—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the liquid crystal being selectively controlled between a twisted state and a non-twisted state, e.g. TN-LC cell
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP64389/2002 | 2002-03-08 | ||
| JP64389/02 | 2002-03-08 | ||
| JP2002064389 | 2002-03-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1444083A CN1444083A (zh) | 2003-09-24 |
| CN100374938C true CN100374938C (zh) | 2008-03-12 |
Family
ID=27784948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031201628A Expired - Fee Related CN100374938C (zh) | 2002-03-08 | 2003-03-10 | 液晶显示器件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7659947B2 (enExample) |
| JP (1) | JP4216092B2 (enExample) |
| KR (1) | KR100961931B1 (enExample) |
| CN (1) | CN100374938C (enExample) |
| TW (1) | TWI284244B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100866976B1 (ko) * | 2002-09-03 | 2008-11-05 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
| KR100685926B1 (ko) * | 2003-06-11 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 이의 제조방법 |
| KR100623247B1 (ko) * | 2003-12-22 | 2006-09-18 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
| US7915723B2 (en) * | 2004-01-29 | 2011-03-29 | Casio Computer Co., Ltd. | Transistor array, manufacturing method thereof and image processor |
| KR101177720B1 (ko) * | 2005-09-20 | 2012-08-28 | 엘지디스플레이 주식회사 | 액정표시장치와 그 제조방법 |
| TWI764143B (zh) | 2006-05-16 | 2022-05-11 | 日商半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| US20100194414A1 (en) * | 2007-04-17 | 2010-08-05 | Jin Kook Jun | Electro optical detector |
| JP5360673B2 (ja) * | 2007-08-09 | 2013-12-04 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| CN103137616B (zh) * | 2011-11-25 | 2017-04-26 | 上海天马微电子有限公司 | Tft阵列基板及其形成方法、显示面板 |
| KR101534421B1 (ko) * | 2011-11-25 | 2015-07-06 | 상하이 티안마 마이크로-일렉트로닉스 컴퍼니., 리미티드 | Tft 어레이 기판 및 그의 형성 방법, 및 디스플레이 패널 |
| KR101339001B1 (ko) | 2012-07-04 | 2013-12-09 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 및 제조방법 |
| US9520424B2 (en) * | 2012-10-29 | 2016-12-13 | Taiwan Semiconductor Manufacturing Company Limited | Black level correction (BLC) structure |
| JP2014106428A (ja) * | 2012-11-28 | 2014-06-09 | Japan Display Inc | 表示装置及び電子機器 |
| CN105785682B (zh) * | 2016-05-23 | 2020-09-04 | 深圳市华星光电技术有限公司 | 阵列基板、液晶显示面板及阵列基板的制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347380A (en) * | 1991-12-20 | 1994-09-13 | Thomson-Csf | Liquid crystal optical polarization separator with parrallel alignment on one substrate, perpendicular on other |
| JPH07181517A (ja) * | 1993-12-22 | 1995-07-21 | Toshiba Corp | アクティブマトリックス型液晶表示装置 |
| CN1195786A (zh) * | 1997-02-27 | 1998-10-14 | 精工爱普生株式会社 | 液晶装置及其制造方法和投影型显示装置 |
| US6088070A (en) * | 1997-01-17 | 2000-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode |
| JP2002031802A (ja) * | 2000-07-17 | 2002-01-31 | Nec Corp | アクティブマトリクス型液晶表示装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4991272A (en) * | 1988-08-09 | 1991-02-12 | Bianchi John E | Quick release buckle |
| US5187604A (en) * | 1989-01-18 | 1993-02-16 | Hitachi, Ltd. | Multi-layer external terminals of liquid crystal displays with thin-film transistors |
| US5115305A (en) * | 1990-07-05 | 1992-05-19 | Baur Thomas G | Electrically addressable liquid crystal projection system with high efficiency and light output |
| JPH05289082A (ja) | 1992-04-07 | 1993-11-05 | Fujitsu Ltd | 液晶表示装置 |
| JP3102467B2 (ja) * | 1992-04-28 | 2000-10-23 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置の作製方法 |
| JP2812851B2 (ja) | 1993-03-24 | 1998-10-22 | シャープ株式会社 | 反射型液晶表示装置 |
| JPH06281923A (ja) | 1993-03-25 | 1994-10-07 | Sony Corp | 液晶表示装置 |
| US5428469A (en) * | 1993-11-16 | 1995-06-27 | Minnesota Mining And Manufacturing Company | Liquid crystal display projection systems employing polarizing beam splitters and passing light through display cell from both directions |
| US5594568A (en) * | 1993-12-15 | 1997-01-14 | Ois Optical Imaging Systems, Inc. | LCD with a pair of retardation films on one side of normally white liquid crystal layer |
| TW330986B (en) * | 1995-07-25 | 1998-05-01 | Toshiba Co Ltd | LCD element and optically anisotropic element |
| KR100338480B1 (ko) * | 1995-08-19 | 2003-01-24 | 엘지.필립스 엘시디 주식회사 | 액정표시장치및그제조방법 |
| US5835177A (en) * | 1995-10-05 | 1998-11-10 | Kabushiki Kaisha Toshiba | Array substrate with bus lines takeout/terminal sections having multiple conductive layers |
| JP3634089B2 (ja) * | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
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| JPH1195212A (ja) | 1997-09-17 | 1999-04-09 | Hitachi Ltd | 反射型液晶表示素子および液晶プロジェクタ |
| JP4553991B2 (ja) | 1997-12-09 | 2010-09-29 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
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| JP3141860B2 (ja) * | 1998-10-28 | 2001-03-07 | ソニー株式会社 | 液晶表示装置の製造方法 |
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| US6825488B2 (en) | 2000-01-26 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7023021B2 (en) | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
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| JP4092851B2 (ja) | 2000-04-19 | 2008-05-28 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法及び電子機器 |
| US6747289B2 (en) | 2000-04-27 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
| JP4588167B2 (ja) | 2000-05-12 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI224806B (en) | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US6613620B2 (en) | 2000-07-31 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6720577B2 (en) | 2000-09-06 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6842211B2 (en) | 2000-11-02 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, and method of manufacturing the same |
| JP2002151698A (ja) | 2000-11-14 | 2002-05-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| SG160191A1 (en) | 2001-02-28 | 2010-04-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US6833313B2 (en) | 2001-04-13 | 2004-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device by implanting rare gas ions |
-
2003
- 2003-02-25 JP JP2003047828A patent/JP4216092B2/ja not_active Expired - Fee Related
- 2003-02-28 US US10/376,158 patent/US7659947B2/en not_active Expired - Fee Related
- 2003-03-03 TW TW092104442A patent/TWI284244B/zh not_active IP Right Cessation
- 2003-03-07 KR KR1020030014229A patent/KR100961931B1/ko not_active Expired - Fee Related
- 2003-03-10 CN CNB031201628A patent/CN100374938C/zh not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347380A (en) * | 1991-12-20 | 1994-09-13 | Thomson-Csf | Liquid crystal optical polarization separator with parrallel alignment on one substrate, perpendicular on other |
| JPH07181517A (ja) * | 1993-12-22 | 1995-07-21 | Toshiba Corp | アクティブマトリックス型液晶表示装置 |
| US6088070A (en) * | 1997-01-17 | 2000-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode |
| CN1195786A (zh) * | 1997-02-27 | 1998-10-14 | 精工爱普生株式会社 | 液晶装置及其制造方法和投影型显示装置 |
| JP2002031802A (ja) * | 2000-07-17 | 2002-01-31 | Nec Corp | アクティブマトリクス型液晶表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030074285A (ko) | 2003-09-19 |
| JP2003330026A (ja) | 2003-11-19 |
| US20030169380A1 (en) | 2003-09-11 |
| CN1444083A (zh) | 2003-09-24 |
| US7659947B2 (en) | 2010-02-09 |
| TWI284244B (en) | 2007-07-21 |
| JP4216092B2 (ja) | 2009-01-28 |
| KR100961931B1 (ko) | 2010-06-10 |
| TW200304032A (en) | 2003-09-16 |
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