CN100365778C - 制造多晶硅薄膜的方法和使用该多晶硅的薄膜晶体管 - Google Patents
制造多晶硅薄膜的方法和使用该多晶硅的薄膜晶体管 Download PDFInfo
- Publication number
- CN100365778C CN100365778C CNB2005100079616A CN200510007961A CN100365778C CN 100365778 C CN100365778 C CN 100365778C CN B2005100079616 A CNB2005100079616 A CN B2005100079616A CN 200510007961 A CN200510007961 A CN 200510007961A CN 100365778 C CN100365778 C CN 100365778C
- Authority
- CN
- China
- Prior art keywords
- thin film
- polysilicon
- silicon thin
- film transistor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 46
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000002425 crystallisation Methods 0.000 claims abstract description 45
- 230000008025 crystallization Effects 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 239000012298 atmosphere Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 22
- 239000012528 membrane Substances 0.000 claims description 17
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005224 laser annealing Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 6
- 239000007790 solid phase Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000007669 thermal treatment Methods 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 6
- 238000001237 Raman spectrum Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PZZOEXPDTYIBPI-UHFFFAOYSA-N 2-[[2-(4-hydroxyphenyl)ethylamino]methyl]-3,4-dihydro-2H-naphthalen-1-one Chemical compound C1=CC(O)=CC=C1CCNCC1C(=O)C2=CC=CC=C2CC1 PZZOEXPDTYIBPI-UHFFFAOYSA-N 0.000 description 1
- 101710198693 Invasin Proteins 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47G—HOUSEHOLD OR TABLE EQUIPMENT
- A47G9/00—Bed-covers; Counterpanes; Travelling rugs; Sleeping rugs; Sleeping bags; Pillows
- A47G9/06—Travelling rugs; Sleeping rugs
- A47G9/062—Travelling rugs; Sleeping rugs for covering the ground, e.g. picnic or beach blankets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47C—CHAIRS; SOFAS; BEDS
- A47C27/00—Spring, stuffed or fluid mattresses or cushions specially adapted for chairs, beds or sofas
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR11146/2004 | 2004-02-19 | ||
KR11146/04 | 2004-02-19 | ||
KR1020040011146A KR100623251B1 (ko) | 2004-02-19 | 2004-02-19 | 다결정 실리콘 박막의 제조 방법 및 이를 사용하여제조되는 다결정 실리콘을 사용하는 박막 트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1658376A CN1658376A (zh) | 2005-08-24 |
CN100365778C true CN100365778C (zh) | 2008-01-30 |
Family
ID=34858761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100079616A Active CN100365778C (zh) | 2004-02-19 | 2005-02-04 | 制造多晶硅薄膜的方法和使用该多晶硅的薄膜晶体管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7964456B2 (zh) |
JP (1) | JP4871502B2 (zh) |
KR (1) | KR100623251B1 (zh) |
CN (1) | CN100365778C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100666552B1 (ko) * | 2004-06-30 | 2007-01-09 | 삼성에스디아이 주식회사 | 반도체 소자의 제조 방법 및 이 방법에 의하여 제조되는반도체 소자 |
CN100459043C (zh) * | 2006-02-08 | 2009-02-04 | 财团法人工业技术研究院 | 多晶硅膜的制造方法以及薄膜晶体管的制造方法 |
CN101290877B (zh) * | 2007-04-20 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅薄膜的制备方法 |
TWI485781B (zh) * | 2009-03-13 | 2015-05-21 | Semiconductor Energy Lab | 半導體裝置及該半導體裝置的製造方法 |
CN102110740B (zh) * | 2010-11-23 | 2012-09-05 | 上海交通大学 | 定向凝固多晶硅太阳电池的两次热处理方法 |
CN102978590A (zh) * | 2012-11-27 | 2013-03-20 | 上海大学 | 多循环快速热退火非晶硅薄膜的方法 |
WO2018076139A1 (zh) * | 2016-10-24 | 2018-05-03 | 丁欣 | 多晶硅的制造方法以及单晶硅的制造方法 |
WO2024004998A1 (ja) * | 2022-06-29 | 2024-01-04 | 株式会社日本触媒 | シリコン膜の製造方法及びシリコン膜 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5344796A (en) * | 1992-10-19 | 1994-09-06 | Samsung Electronics Co., Ltd. | Method for making polycrystalline silicon thin film |
JPH06310427A (ja) * | 1993-04-21 | 1994-11-04 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
CN1169589A (zh) * | 1996-01-19 | 1998-01-07 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63304670A (ja) | 1987-06-04 | 1988-12-12 | Hitachi Ltd | 薄膜半導体装置の製造方法 |
JP3306258B2 (ja) * | 1995-03-27 | 2002-07-24 | 三洋電機株式会社 | 半導体装置の製造方法 |
WO1997001863A1 (fr) * | 1995-06-26 | 1997-01-16 | Seiko Epson Corporation | Procede de formation de film semi-conducteur cristallin, procede de production de transistor a couche mince, procede de production de cellules solaires et dispositif cristal liquide a matrice active |
KR100188099B1 (ko) | 1995-10-17 | 1999-07-01 | 김광호 | 액정 표시 장치용 박막 트랜지스터 기판의 제조방법 |
JP3927634B2 (ja) | 1995-10-25 | 2007-06-13 | 株式会社半導体エネルギー研究所 | レーザーアニール方法及び薄膜トランジスタの作製方法 |
JP3662371B2 (ja) | 1996-10-15 | 2005-06-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法及び薄膜トランジスタ |
JP3917698B2 (ja) * | 1996-12-12 | 2007-05-23 | 株式会社半導体エネルギー研究所 | レーザーアニール方法およびレーザーアニール装置 |
JPH11329972A (ja) | 1998-05-19 | 1999-11-30 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体膜の形成方法 |
JP4019584B2 (ja) | 1999-12-27 | 2007-12-12 | 株式会社Ihi | 半導体膜の形成方法 |
JP2001210726A (ja) * | 2000-01-24 | 2001-08-03 | Hitachi Ltd | 半導体装置及びその製造方法 |
US6521492B2 (en) * | 2000-06-12 | 2003-02-18 | Seiko Epson Corporation | Thin-film semiconductor device fabrication method |
-
2004
- 2004-02-19 KR KR1020040011146A patent/KR100623251B1/ko active IP Right Grant
- 2004-11-25 JP JP2004340254A patent/JP4871502B2/ja active Active
-
2005
- 2005-01-12 US US11/033,493 patent/US7964456B2/en active Active
- 2005-02-04 CN CNB2005100079616A patent/CN100365778C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5344796A (en) * | 1992-10-19 | 1994-09-06 | Samsung Electronics Co., Ltd. | Method for making polycrystalline silicon thin film |
JPH06310427A (ja) * | 1993-04-21 | 1994-11-04 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
CN1169589A (zh) * | 1996-01-19 | 1998-01-07 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
Non-Patent Citations (1)
Title |
---|
Polycrystalline Silicon Thin-Film Transistors Fabricated byDefect Reduction Methods. H.Watakabe T.Sameshima.IEEE TRANSACTIONS ON ELECTRON DEVICES,Vol.49 No.12. 2002 * |
Also Published As
Publication number | Publication date |
---|---|
US20050186720A1 (en) | 2005-08-25 |
US7964456B2 (en) | 2011-06-21 |
KR100623251B1 (ko) | 2006-09-18 |
JP4871502B2 (ja) | 2012-02-08 |
JP2005236264A (ja) | 2005-09-02 |
KR20050082645A (ko) | 2005-08-24 |
CN1658376A (zh) | 2005-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100365778C (zh) | 制造多晶硅薄膜的方法和使用该多晶硅的薄膜晶体管 | |
US7696030B2 (en) | Method of fabricating semiconductor device and semiconductor fabricated by the same method | |
CN100419952C (zh) | 制造半导体器件的方法和由此方法制造的半导体器件 | |
KR20060081296A (ko) | 실리콘 필름의 제조방법 | |
JPH07131034A (ja) | 半導体装置の作製方法 | |
CN102414791B (zh) | 制造多晶硅薄膜的方法 | |
KR100960862B1 (ko) | 실리콘 결정화 방법 | |
KR19980036973A (ko) | 마이크로파를 이용한 다결정 박막의 제조방법 | |
KR20130060002A (ko) | 저온 다결정 박막의 제조방법 | |
KR101118275B1 (ko) | 다결정 실리콘 박막의 제조방법 | |
KR101011806B1 (ko) | 다결정 실리콘 박막의 제조방법 | |
KR100766038B1 (ko) | 도펀트 활성화 방법 | |
KR100712176B1 (ko) | 유기 전계 발광 소자 및 그 제조 방법 | |
TWI377173B (en) | Method for manufacturing crystalline silicon | |
JPH0878694A (ja) | 半導体装置の作製方法 | |
KR101079302B1 (ko) | 다결정 실리콘 박막의 제조방법 | |
KR100501701B1 (ko) | 결정질 실리콘박막 형성방법 | |
KR20130060001A (ko) | 저온 다결정 박막의 제조방법 | |
KR101095621B1 (ko) | 다결정 실리콘 박막의 제조방법 | |
KR20130056500A (ko) | 다결정 실리콘층의 제조방법 및 이를 이용한 박막트랜지스터의 제조방법 | |
KR20110122533A (ko) | 다결정 실리콘 박막의 제조방법 | |
KR101123373B1 (ko) | 다결정 실리콘 박막의 제조방법 | |
KR20090107382A (ko) | 폴리 실리콘 박막 트랜지스터용 폴리 실리콘층의 제조방법 | |
JPH0936374A (ja) | 半導体作製方法および半導体装置作製方法 | |
Zeng et al. | Aluminium Induced Crystallisation of Amorphous Silicon Thin Films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung SDI Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121017 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |