CN100352023C - 半导体装置的制造方法以及半导体装置的制造装置 - Google Patents

半导体装置的制造方法以及半导体装置的制造装置 Download PDF

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CN100352023C
CN100352023C CNB2004100850286A CN200410085028A CN100352023C CN 100352023 C CN100352023 C CN 100352023C CN B2004100850286 A CNB2004100850286 A CN B2004100850286A CN 200410085028 A CN200410085028 A CN 200410085028A CN 100352023 C CN100352023 C CN 100352023C
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resin
semiconductor chip
recess
semiconductor device
soldering tip
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CN1612309A (zh
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尾形义春
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

本发明能够提供一种可靠性和安装性良好的半导体装置的制造方法以及半导体装置的制造装置。其中：将具有凹部(12)的焊头(10)以在所述凹部(12)内配置半导体芯片(20)的状态朝向布线基板(30)压下，由所述凹部(12)的底面(14)挤压所述半导体芯片(20)，使设在所述半导体芯片(20)和所述布线基板(30)之间的树脂(40)流动，而向所述凹部(12)内的所述半导体芯片(20)的侧方空间填充所述树脂(40)。然后，使所述树脂(40)硬化。

Description

半导体装置的制造方法以及半导体装置的制造装置
技术领域
本发明涉及半导体装置的制造方法以及半导体装置的制造装置。
背景技术
人们已知，通过树脂固定布线基板和半导体芯片。而且通过使树脂达到半导体芯片侧面而形成，可以提高半导体装置的可靠性。此时，如果能控制配置于半导体芯片侧面的树脂大小，则可以将半导体装置形成为规定大小，从而能制造出安装性良好的半导体装置。
[专利文献1]特开2000-174039号公报
发明内容
本发明的目的在于提供一种可靠性和安装性良好的半导体装置的制造方法以及半导体装置的制造装置。
(1)一种半导体装置的制造方法包括：将具有凹部的焊头以在所述凹部内配置半导体芯片的状态朝向布线基板压下，由所述凹部的底面挤压所述半导体芯片，使设在所述半导体芯片和所述布线基板之间的树脂流动，而向所述凹部内的所述半导体芯片的侧方空间填充所述树脂的工序；和使所述树脂硬化的工序，并且，使所述焊头的所述凹部周围部分与所述布线基板呈非接触，在所述焊头的所述凹部的所述底面上形成凸部，由所述凸部的突出面挤压所述半导体芯片，而向所述凹部内的所述半导体芯片以及所述凸部的侧方空间填充所述树脂。根据该发明，以达到半导体芯片的侧方的方式形成树脂部。因此，能够牢固粘接布线基板与半导体芯片。另外，根据本发明，通过焊头的凹部，能够控制树脂部的形状。因此，能够按设计的大小制造半导体装置。即，根据该发明，可以制造一种可靠性和安装性良好的半导体装置。而且，以使所述焊头的所述凹部周围部分与所述布线基板呈非接触。据此，由于可以将树脂排出到焊头的凹部外，因此即使过剩设置树脂的情况下，也能按设计的大小制造半导体装置。
(2)在该半导体装置的制造方法中，可以一边加热所述树脂、一边进行使所述树脂流动的工序。由此，可以很容易地在焊头凹部内填充树脂，从而能提高半导体装置的制造效率。
(3)在该半导体装置的制造方法中，所述树脂可以是热硬化性树脂。
(4)在该半导体装置的制造方法中，也可以：在所述半导体芯片及所述树脂、和所述焊头之间，夹隔设有用于防止所述树脂附着的薄片。由此，可以防止树脂附着在焊头上，从而能连续利用一个焊头，提高半导体装置的制造效率。
(5)在该半导体装置的制造方法中，可以：在压下了所述焊头的状态下进行使所述树脂硬化的工序。由此，可以按设计的外形制造半导体装置，从而能制造可靠性和安装性良好的半导体装置。
(6)本发明的半导体装置的制造装置，包括具有凹部的焊头、和使所述焊头上下移动的驱动器；
并且，以将半导体芯片配置于所述凹部内的状态，由所述驱动器将所述焊头朝向布线基板压下，由所述凹部的底面挤压所述半导体芯片，使设在所述半导体芯片和所述布线基板之间的树脂流动，而向所述凹部内的所述半导体芯片的侧方空间填充所述树脂。根据本发明，能以到达半导体芯片侧方的方式形成树脂部，所述驱动器，以所述凹部周围部分与所述布线基板呈非接触的方式，驱动所述焊头，在所述焊头的所述凹部的所述底面上形成凸部，由所述凸部的突出面挤压所述半导体芯片，而向所述凹部内的所述半导体芯片及所述凸部的侧方空间填充所述树脂。因此能够牢固地粘接布线基板和半导体芯片。另外，根据该发明，可以通过焊头凹部，控制树脂部形状。因此能够按设计的大小制造半导体装置。即根据本发明，能制造可靠性和安装性良好的半导体装置。而且，所述驱动器，以所述凹部周围部分与所述布线基板呈非接触的方式，驱动所述焊头。由此，由于可以将树脂排出到焊头的凹部外，因此即使过剩设置树脂，也能按设计的大小制造半导体装置。
(7)在该半导体装置的制造装置可以还具备加热器。
(8)在该半导体装置的制造装置中，可以：还包括夹隔设在所述半导体芯片以及所述树脂、和所述焊头之间的用于防止所述树脂附着的薄片。由此，可以防止树脂附着在焊头上，从而能连续利用一个焊头，提高半导体装置的制造效率。
附图说明
图1是用于说明适用了本发明的实施方式的半导体装置的制造方法的图。
图2是用于说明适用了本发明的实施方式的半导体装置的制造方法的图。
图3是用于说明适用了本发明的实施方式的半导体装置的制造方法的图。
图4是用于说明适用了本发明的实施方式的半导体装置的制造方法的图。
图5是用于说明适用了本发明的实施方式的半导体装置的制造方法的图。
图6是用于说明适用了本发明的实施方式的半导体装置的制造方法的图。
图7是表示已安装适用了本发明的实施方式的半导体装置的电路基板的图。
图8是表示具备适用了本发明的实施方式的半导体装置的电子设备的图。
图9是表示具备适用了本发明的实施方式的半导体装置的电子设备的图。
图10是用于说明适用了本发明的实施方式变形例的半导体装置的制造方法的图。
图11是用于说明适用了本发明的实施方式变形例的半导体装置的制造方法的图。
图12是用于说明适用了本发明的实施方式变形例的半导体装置的制造方法的图。
图13是用于说明适用了本发明的实施方式变形例的半导体装置的制造方法的图。
图中：10-焊头(bonding tool)，12-凹部，13-凹部的周围部分，14-底面，20-半导体芯片，30-布线基板，40-树脂，41-树脂部，50-驱动器，52-加热器，54-薄板，56-支撑台，60-焊头，62-凹部，64-凸部，65-突出部，70-树脂部。
具体实施方式
下面，参照附图，说明适用了本发明的实施方式。但是本发明并不限定在以下实施方式。
图1～图6是用于说明适用了本发明的实施方式的半导体装置的制造方法的图。本实施方式的半导体装置的制造方法包括以下工序，即，将具有凹部12的焊头10以在所述凹部12内配置半导体芯片20的状态朝向布线基板30压下，由所述凹部12的底面14挤压所述半导体芯片20，使设在所述半导体芯片20和所述布线基板30之间的树脂40流动，而向所述凹部12内的所述半导体芯片20的侧方空间填充所述树脂40(参照图4)。下面，说明该工序。
本工序还可以包括准备布线基板30的工序(参照图1)。布线基板30的材料没有特殊限定，可以由有机系(例如环氧树脂基板)、无机系(例如陶瓷基板、玻璃基板)、或者它们的复合结构(例如玻璃环氧树脂基板)构成。布线基板30可以是刚性基板，此时也可以称为插入物(interposer)。或者，布线基板30也可以是聚酯基板或者聚酰亚胺基板等柔性基板。另外，布线基板30也可以是COF(Chip On Film)用基板。布线基板30可以是由单一层构成的单层基板，也可以是由多个层通过叠层构成的叠层基板。而且，对于布线基板30的形状和厚度，也没有什么特殊限定。
布线基板30具备布线图形32(参照图1)。布线图形32可以通过对铜(Cu)、铬(Cr)、钛(Ti)、镍(Ni)、钛钨(Ti-W)、金(Au)、铝(Al)、镍钒(NiV)、钨(W)中的任意物质的叠层形成，或者可以通过其中任意一层形成。布线图形32能以将布线基板30的一方的面与另一方的面进行电连接的方式形成。例如，如图1所示，布线图形32可以具备垫片33、35。此时，垫片33是设在布线基板30的一方的面上的垫片，而垫片35是设在布线基板30的另一方的面上的垫片。而且，通过将垫片33和垫片35进行电连接，使布线基板30的两个面进行电连接。另外，此时，可以包括垫片33、35，称为布线图形32。在作为布线基板30准备叠层基板的情况下，布线图形32可以设在各层之间。另外，对于布线图形32的形成方法，也没有特殊限定。例如，可以通过溅射等方法形成布线图形32，也可以适用由非电镀形成布线图形32的添加法。布线图形32可以镀上软钎料、锡、金、镍等。
本工序还可以包括，在布线基板30上设置树脂40的工序(参照图1)。树脂40可以设置成薄膜状，也可以设置成糊状。另外，树脂40的材料没有特别限定。如图1所示，作为树脂40，可以利用含有导电粒子42的各向异性导电薄膜(ACF)。但与此不同，也可以利用含有导电粒子各向异性导电糊(ACP)、或不含有导电粒子的树脂(NCF或者NCP)(图中未示出)。
本工序还可以包括，在布线基板30上搭载半导体芯片20的步骤(参照图1)。此时，半导体芯片20可以从树脂40上方进行搭载。半导体芯片20具备电极22。电极22可以与半导体芯片20的内部进行电连接。半导体芯片20可以具备由晶体管或者存储元件等构成的集成电路24，且电极22也可以与集成电路24进行电连接。如图1所示，可以以使电极22与布线基板30(垫片33)对向的方式搭载半导体芯片20。
本工序，如图2所示，还可以包括准备具有凹部12的焊头10的工序。本工序还可以包括，如图3所示，将焊头10以在凹部12内配置半导体芯片20的方式进行对正的步骤。并且，将焊头10以在凹部12内配置半导体芯片20的状态朝向布线基板30压下。从而，由焊头10的凹部12的底面14挤压半导体芯片20，使设在半导体芯片20和布线基板30之间的树脂40流动。结果如图4所示，向凹部12内的半导体芯片20的侧方空间填充树脂40。更详细的说，树脂40被半导体芯片20压下而向外方向扩大，但由于被焊头10的凹部12限制了其扩大，因此填充在凹部12内。由此，树脂40填充至凹部12内的半导体芯片20的侧方空间。可以通过驱动器50，驱动焊头10。
本工序可以在加热树脂40的同时进行。一般来说，温度提高，树脂的流动性也提高。因此，加热树脂40的同时进行本工序，则树脂40就会容易流动，从而可以容易地向凹部12内的半导体芯片20的侧方空间填充树脂40。由此，可提高半导体装置的制造效率。如图3以及4所示，可以通过用加热器52对焊头10加热，间接地加热树脂40。但可以与此不同，直接加热树脂40。
在本工序中，如图3以及4所示，也可以在半导体芯片20以及树脂40、和焊头10之间，夹隔设置薄片54。薄片54具有防止树脂40附着的功能。通过薄片54，可以防止树脂40附着在焊头10上。因此，可以用一个焊头10连续地制造半导体装置，提高半导体装置的制造效率。另外作为薄片54，可以利用由例如特氟隆(注册商标)形成的薄板。
在本工序中，如图3以及4所示，也可以使半导体芯片20的与焊头10相对的面的全面接触于凹部12的底面14(或者薄片54)。由此可以防止树脂40附着在半导体芯片20的上面。从而可以控制布线装置的高度，且能消除外观不良现象的产生。
在本工序中，如图4所示，也可以使焊头10的凹部12的周围部分13与布线基板30呈非接触。由此，即使在过剩设置树脂40的情况下，也可以将树脂40排出到焊头的凹部12外。因此不需要严格控制树脂40的量，而可以有效地制造半导体装置。
另外，在本工序中，可以以相对的方式对半导体芯片20的电极22和布线图形32(垫片33)进行电连接。此时，可以通过在电极22和垫片33之间夹隔设置导电粒子42，对两者进行电连接。另外，如图3以及4所示，可以以将布线基板30设置在支撑台56上的状态进行本工序。
本实施方式的半导体装置的制造方法，包括使树脂40硬化的工序。如图5所示，可以使树脂40硬化，形成树脂部41。可以用树脂部41粘接布线基板30和半导体芯片20。根据本实施方式的半导体装置的制造方法，如图4所示，树脂41形成为具有与半导体芯片20重叠的第一部分44、和配置在半导体芯片20周围的第二部分46的形状。由此，能够牢固地粘接布线基板30和半导体芯片20，制造可靠性高的半导体装置。使树脂40硬化的工序，可以在压下焊头10的状态下进行(参照图4)。由此，可以使树脂部41具有沿着焊头10的凹部12的形状。即，通过决定焊头10的凹部12的形状，能够按设计的形状形成树脂部41。因此，可以维持布线基板30和半导体芯片20之间的接合强度，且能形成构成为极小外形的树脂部41。即，能够制造可靠性及安装性优越的半导体装置。另外，使树脂40硬化的方法没有特别的限定，可以适用配合树脂40的特性的方法。例如树脂40可以使热硬化性树脂，此时可以通过对树脂40进行加热处理使其硬化。另外，如前面说明的一样，一般来说，加热树脂能提高其流动性。因此，在作为树脂40利用热硬化性树脂的情况下，从压下半导体芯片20的工序开始加热树脂40，则不仅能很容易在焊头10的凹部12内填充树脂40，而且在此后，也能很容易使树脂40硬化，从而可以高效地制造半导体装置。
最后，可以经在垫片35上设置外部端子37的工序、检查工序、或者切开布线基板30的工序等，制造半导体装置。另外，图6表示通过本实施方式的半导体装置的制造方法制造的半导体装置1。另外，图7表示安装有半导体装置1的布线基板1000。另外，作为备有通过本实施方式的半导体装置的制造方法制造的半导体装置1的电子设备，图8表示了笔记本型个人电脑2000、图9表示了便携电话。
以上说明的半导体装置的制造工序，可以通过利用包含设有凹部12的焊头10的半导体装置的制造装置进行。本发明的半导体装置的制造装置，包括能使焊头10上下移动的驱动器50。驱动器50，可以以凹部12的周围部分13与布线基板30呈非接触的方式驱动焊头10。半导体装置的制造装置可以还具备加热器52。可以用加热器52加热树脂40。可以用加热器52直接加热树脂40，但也可以通过对焊头10加热、间接地加热树脂40(参照图3以及图4)。半导体装置的制造装置可以再包含薄片54。薄片54夹隔设置在半导体芯片20以及树脂40、和焊头之间。薄片54具有防止树脂40附着的功能。另外，半导体装置的制造装置可以还包含支撑台56。通过利用该半导体装置的制造装置，可以高效地制造可靠性和安装性良好的半导体装置。
另外适用本发明的实施方式的半导体装置的制造方法，并不仅限于此，而可以具有各种变形例。例如，如图10所示，半导体装置的制造方法可以包含准备焊头60的工序。焊头60具有凹部62。焊头60的凹部62的底面形成有凸部64。而且，半导体装置的制造方法还包括以在所述凹部62内配置半导体芯片20的状态压下焊头60，由凸部64的突出面65挤压半导体芯片20的工序。从而如图11所示，在凹部62内的半导体芯片20和凸部64的侧方空间填充树脂40。如图12所示，半导体装置的制造方法包括使树脂40硬化形成树脂部70的工序。根据本变形例的半导体装置的制造方法，树脂部70以到达比半导体芯片20的与布线基板30相对的面的相反一侧的面高位置的方式形成。因此，在半导体芯片20上设置粘接剂等情况下，可以防止其液下垂。即，能制造适于叠层结构的半导体装置。例如，如图13所示，可以在半导体芯片20上搭载半导体芯片21，制造叠层型半导体装置。另外，如图11所示，突出面65可以比半导体芯片20的俯视形状小。由此，如图12所示，树脂部70以到达比半导体芯片20的与布线基板30相对的面的相反一侧的面的周边部的方式形成。因此，能够更牢固地接合半导体芯片20和布线基板30，制造出可靠性高的半导体装置。但与此不同，突出面也可以比半导体芯片20的俯视形状大(图中未示出)。
另外，本发明并不仅限于上述的实施方式，而可以采用各种变形。例如，本发明包含与实施方式中说明的结构实质上相同的结构(例如，功能、方法以及结果相同的结构、或者目的以及效果相同的结构)。另外，本发明包括置换在实施方式中说明的结构中非本质的部分的结构。另外，本发明还包括能够起着与实施方式中已说明的结构同样作用效果的结构或者能达到同样目的的结构。另外，本发明还包括在实施方式中已说明的结构上再添加公知技术的结构。

Claims (8)

1.一种半导体装置的制造方法，其特征在于，包括：
将具有凹部的焊头以在所述凹部内配置半导体芯片的状态朝向布线基板压下，由所述凹部的底面挤压所述半导体芯片，使设在所述半导体芯片和所述布线基板之间的树脂流动，而向所述凹部内的所述半导体芯片的侧方空间填充所述树脂的工序；
使所述树脂硬化的工序，
并且，使所述焊头的所述凹部周围部分与所述布线基板呈非接触，
在所述焊头的所述凹部的所述底面上形成凸部，
由所述凸部的突出面挤压所述半导体芯片，而向所述凹部内的所述半导体芯片以及所述凸部的侧方空间填充所述树脂。
2.如权利要求1所述的半导体装置的制造方法，其特征是：
一边加热所述树脂、一边进行使所述树脂流动的工序。
3.如权利要求1所述的半导体装置的制造方法，其特征是：
所述树脂是热硬化性树脂。
4.如权利要求1所述的半导体装置的制造方法，其特征是：
在所述半导体芯片及所述树脂、和所述焊头之间，夹隔设有用于防止所述树脂附着的薄片。
5.如权利要求1～4中任何一项所述的半导体装置的制造方法，其特征是：
在压下了所述焊头的状态下进行使所述树脂硬化的工序。
6.一种半导体装置的制造装置，其特征是：
包括：具有凹部的焊头、和使所述焊头上下移动的驱动器；
以将半导体芯片配置于所述凹部内的状态，由所述驱动器将所述焊头朝向布线基板压下，由所述凹部的底面挤压所述半导体芯片，使设在所述半导体芯片和所述布线基板之间的树脂流动，而向所述凹部内的所述半导体芯片的侧方空间填充所述树脂，
所述驱动器，以所述凹部周围部分与所述布线基板呈非接触的方式，驱动所述焊头，
在所述焊头的所述凹部的所述底面上形成凸部，
由所述凸部的突出面挤压所述半导体芯片，而向所述凹部内的所述半导体芯片及所述凸部的侧方空间填充所述树脂。
7.如权利要求6所述的半导体装置的制造装置，其特征是：还包括加热器。
8.如权利要求6或7所述的半导体装置的制造装置，其特征是：还包括夹隔设在所述半导体芯片以及所述树脂、和所述焊头之间的用于防止所述树脂附着的薄片。
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