CN1909224A - 半导体装置和电子模块以及电子模块的制造方法 - Google Patents
半导体装置和电子模块以及电子模块的制造方法 Download PDFInfo
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- CN1909224A CN1909224A CNA2006101084870A CN200610108487A CN1909224A CN 1909224 A CN1909224 A CN 1909224A CN A2006101084870 A CNA2006101084870 A CN A2006101084870A CN 200610108487 A CN200610108487 A CN 200610108487A CN 1909224 A CN1909224 A CN 1909224A
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Abstract
本发明提供一种安装性高的半导体装置及可靠性高的电子模块以及电子模块的制造方法。半导体装置包括:具有电极(14)的半导体芯片(10);于半导体芯片(10)的已形成了电极(14)的面形成的多个树脂突起(20);与电极(14)电连接而成并形成于任一个所述树脂突起上的布线(30)。树脂突起(20)形成为:越是远离半导体芯片(10)的已形成了电极(14)的面的中央而配置的树脂突起,其高度越高。
Description
技术领域
本发明涉及半导体装置和电子模块以及电子模块的制造方法。
背景技术
公知布线基板上安装了半导体装置(例如参照日本特开平2-272737号公报)的类型的电子模块。为了制造可靠性高的电子模块,重要的是可靠地电连接布线基板的布线图案与半导体装置的布线。
发明内容
本发明的目的在于,提供一种安装性高的半导体装置及可靠性高的电子模块以及电子模块的制造方法。
(1)本发明涉及的半导体装置,包括:
半导体芯片,其具有电极;
多个树脂突起,其形成于所述半导体芯片的已形成了所述电极的面;和
布线,其与所述电极电连接而成,并形成于任一个所述树脂突起上;
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高。根据本发明,可以提供一种安装性优良的半导体装置。
(2)在该半导体装置中,所述半导体芯片可以按照已形成了所述电极的面成为凸曲面的方式翘曲。
(3)本发明涉及的电子模块,包括:
半导体装置,其包括具有电极的半导体芯片、在所述半导体芯片的已形成了所述电极的面形成的多个树脂突起、与所述电极电连接而成并形成于任一个所述树脂突起上的布线;和
布线基板,其装载了所述半导体装置并具有布线图案,
所述半导体装置,按照使所述布线中的与所述树脂突起重叠的部分与所述布线图案的电连接部接触并电连接的方式,被装载于所述布线基板,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高,
所述布线基板按照已形成了所述电连接部的面成为凸曲面的方式翘曲。根据本发明,可以提供一种电连接可靠性高的电子模块。
(4)在该电子模块中,所述半导体芯片可以按照已形成了所述电极的面成为凸曲面的方式翘曲。
(5)本发明涉及的电子模块,包括:
半导体装置,其包括具有电极的半导体芯片、于所述半导体芯片的已形成了所述电极的面形成的多个树脂突起、与所述电极电连接而成并形成于任一个所述树脂突起上的布线;和
布线基板,其装载了所述半导体装置并具有布线图案;
所述半导体装置,按照使所述布线中的与所述树脂突起重叠的部分与所述布线图案的电连接部接触并电连接的方式,被装载在所述布线基板,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高,
所述半导体芯片按照已形成了所述电极的面成为凸曲面的方式翘曲。根据本发明,可以提供一种电连接可靠性高的电子模块。
(6)本发明涉及的电子模块的制造方法,包括:
准备半导体装置的步骤,该半导体装置包括具有电极的半导体芯片、于所述半导体芯片的已形成了所述电极的面形成的多个树脂突起、与所述电极电连接而成并形成于任一个所述树脂突起上的布线;
准备布线基板的步骤,该布线基板具有布线图案,并翘曲使得形成了所述布线图案的电连接部的面为凸曲面;和
将所述半导体装置装载到所述布线基板,使所述布线中的与所述树脂突起重叠的部分与所述电连接部接触并电连接的步骤,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高。根据本发发明,可以高效地制造可靠性高的电子模块。
(7)在该电子模块的制造方法中,所述半导体芯片可以按照已形成了所述电极的面成为凸曲面的方式翘曲。
(8)本发明涉及的电子模块的制造方法,包括:
准备半导体装置的步骤,该半导体装置包括具有电极的半导体芯片、于所述半导体芯片的已形成了所述电极的面形成的多个树脂突起、与所述电极电连接而成并形成于任一个所述树脂突起上的布线;
准备具有布线图案的布线基板的步骤;和
将所述半导体装置装载到所述布线基板,使所述布线中的与所述树脂突起重叠的部分与所述布线图案的电连接部接触并电连接的步骤,
所述半导体芯片按照已形成了所述电极的面成为凸曲面的方式翘曲,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高。根据本发明,可以高效地制造可靠性高的电子模块。
(9)本发明涉及的半导体装置,包括:
半导体芯片,其具有电极;
第一树脂突起,其形成于所述半导体芯片的已形成了所述电极的面;
第二树脂突起,其配置于所述半导体芯片的已形成了所述电极的面,且配置于比所述第一树脂突起还远离所述半导体芯片的已形成了所述电极的面的中央的位置;和
布线,其与所述电极电连接而成,至少形成于所述第一或第二树脂突起的任一个之上,
所述第二树脂突起的高度比所述第一树脂突起的高度高。根据本发明,可以提供一种安装性优良的半导体装置。
附图说明
图1(A)~图1(C)是用于对采用了本发明而得到的实施方式涉及的半导体装置进行说明的图;
图2是用于说明采用了本发明而得到的实施方式涉及的半导体装置的制造方法的图;
图3(A)及图3(B)是用于说明采用了本发明而得到的实施方式涉及的半导体装置的制造方法的图;
图4(A)~图1(C)是用于说明采用了本发明而得到的实施方式涉及的电子模块的制造方法的图;
图5是用于对采用了本发明而得到的实施方式涉及的电子模块进行说明的图;
图6(A)及图6(B)是用于对采用了本发明而得到的实施方式的变形例进行说明的图。
图中:1-电子模块,10-半导体芯片,11-半导体芯片,12-集成电路,14-电极,16-钝化膜,18-半导体基板,19-区域,20-树脂突起,22-树脂材料,30-布线,40-布线基板,41-布线基板,42-基底基板,44-布线图案,45-电连接部,50-粘接剂,52-粘接层,100-半导体装置,101-半导体装置。
具体实施方式
以下参照附图对采用了本发明而得到的实施方式进行说明。其中,本发明并未限于以下的实施方式。而且,本发明包含自由组合了以下任何实施方式及变形例的方案。
(半导体装置及其制造方法)
以下,参照附图对采用了本发明而得到的实施方式所涉及的半导体装置进行说明。另外,图1(A)~图1(C)是用于对采用了本发明而得到的实施方式涉及的半导体装置进行说明的图。在此,图1(A)是半导体装置100的俯视图。另外,图1(B)是图1(A)的IB-IB线剖面图,图1(C)是图1(A)的IC-IC线剖面图。
如图1(A)~图1(C)所示,本实施方式涉及的半导体装置包括半导体芯片10。半导体芯片10例如可以是硅基板。在半导体芯片10上可以形成有集成电路12(参照图1(C))。集成电路12的构成并未特别限定,例如可以包含晶体管等有源元件,或电阻、线圈、电容器等无源元件。半导体芯片10的形成有集成电路12的面(有源面)可以形成为长方形。其中,半导体芯片10的有源面也可以形成为正方形(未图示)。
如图1(A)及图1(C)所示,半导体芯片10具有电极14。电极14可以和半导体芯片10的内部电连接。电极14也可以和集成电路12电连接。或者也可以包含未电连接于集成电路12的导电体,称为电极14。电极14可以是半导体芯片的内部布线的一部分。此时,电极14也可以是半导体芯片的内部布线中的被用于与外部的电连接的部分。电极14可以由铝或铜等金属形成。电极14也可以沿半导体芯片10的有源面的一条边排列。
如图1(B)及图1(C)所示,半导体芯片10也可以具有钝化膜16。钝化膜16可以形成为使电极14露出。钝化膜16还可以具有使电极14露出的开口。钝化膜16也可以形成为局部覆盖电极14。此时,钝化膜16可以形成为覆盖电极14的外周。钝化膜例如可以是SiO2或SiN等无机绝缘膜。或者,钝化膜16可以是聚酰亚胺等有机绝缘膜。
另外,半导体芯片10的形成了电极14的面可以是平坦面。或者,半导体芯片10也可以按照形成了电极14的面为凸曲面的方式翘曲(图中未示出)。
如图1(A)~图1(C)所示,本实施方式涉及的半导体装置包含形成于半导体芯片10上的多个树脂突起20。树脂突起20形成于半导体芯片10的已形成电极14的面上。树脂突起20也可以形成于钝化膜16上。树脂突起20的材料并未特别限定,可以采用已经公知的任何一种材料。例如树脂突起20可以由聚酰亚胺树脂、硅改性聚酰亚胺树脂、环氧树脂、硅改性环氧树脂、苯并环丁烯(BCB:benzocyclobutene)、聚苯并噁唑(PBO:polybenzoxazole)、酚醛树脂等树脂来形成。
树脂突起20形成为:越是远离半导体芯片10的形成了电极14的面的中央而配置的树脂突起,其高度越高。即,也可以说树脂突起20包括:第一树脂突起;和第二树脂突起,其配置于比第一树脂突起还远离形成了电极14的面的中央的位置、并且高度比第一树脂突起还高。此时,沿半导体10的已形成了电极14的面的一条边(该面为长方形时,可以是其长边)排列的多个树脂突起20,可以形成为:越是配置于距该边的端部近的位置的树脂突起,其高度越高。另外,所谓“树脂突起20的高度”,是指以半导体芯片10的已形成了电极14的面为基准,树脂突起20中最高部分的高度。此外,树脂突起20的形状并未特别限定,可以形成为半球形。此时,树脂突起20在俯视图中可以形成为圆形(参照图1(A))。
再有,树脂突起20也可以形成为:越是远离半导体芯片10的已形成了电极14的面的中央而配置的树脂突起,基端部的截面积越大。换言之,越是高度高的树脂突起20,基端部的底面(与半导体芯片10对向的面)越大。
如图1(A)~图1(C)所示,本实施方式涉及的半导体装置包含布线30。布线30与电极14电连接而成。布线30形成为从电极14上到达树脂突起20上。布线30也可以形成为通过树脂突起20的上端。也可以说布线30形成于树脂突起20之上。如图1(A)及图1(B)所示,1条布线30可以形成为到达1个树脂突起20上。换言之,1个树脂突起20上仅形成有1条布线30。此时,布线30可以形成为通过树脂突起20的最高部分。但是,与此不同,也可以在1个树脂突起20上形成多条布线30(未图示)。布线30的结构及材料并未特别限定。例如,布线30可以形成为单层。或者,布线30可以形成为多层。此时,布线30可以包括:由钛钨形成的第一层;和由金形成的第二层(未图示)。
半导体装置100可以形成为以上的构成。根据该半导体装置100,可以提供安装性优良的半导体装置。关于其效果、和半导体装置100的安装工序,在之后的电子模块及其制造方法之中详细说明。
以下,对制造半导体装置100的方法进行说明。图2~图3(B)是对制造半导体装置100的方法进行说明用的图。
半导体装置100的制造方法可以包括准备半导体基板18的步骤。如图2所示,半导体基板18可以形成为晶片状。晶片状的半导体基板18也可以包含成为多个半导体装置(半导体芯片10)的区域19。即,半导体基板18可以形成为多个半导体芯片为一体的结构。其中,作为半导体基板,也可以利用片状的半导体基板。
半导体装置的制造方法包括在半导体基板18上形成多个树脂突起20的步骤。树脂突起20形成为:越是远离每个区域19的形成了电极14的面的中央而配置的树脂突起,其高度越高。形成树脂突起20的方法并未特别限定。例如,树脂突起20可以通过在半导体基板18上设置树脂材料22并使其固化而形成。此时,树脂材料22可以在多处以互不接触的方式设置。另外,也可以通过调整树脂材料的量来控制树脂突起20的高度(大小)。即,树脂突起20的高度可以根据利用的树脂材料量来控制。例如,如图3(A)所示,也可以按照越是远离区域19的中央,形成一个树脂突起20所利用的树脂的量越增加的方式来设置树脂材料。由此,如图3(B)所示,可以形成为:使远离区域19的中央配置的树脂突起20比配置于区域19的中央侧的树脂突起20还高。再有,由此也可以形成为越是高度高的树脂突起20,基端部的底面越大。而且,树脂材料22也可以设置为恒定高度(参照图3(A))。在以高度恒定的方式设置了树脂材料的情况下,通过在使其熔融后使之固化,从而可以改变树脂突起的高度。或者,也可以利用树脂材料的固化收缩反应,使树脂突起的高度变化。其中,也可以通过使树脂材料的高度变化来调整其量。
半导体装置100的制造方法包括形成与电极14电连接的布线30的步骤。布线30形成为到达树脂突起20之上。布线30也可以用已经公知的任何方法形成。
并且,可以通过按照每个区域19切断分割半导体基板18,从而形成半导体装置100(参照图1(A)~图1(C))。
(电子模块及其制造方法)
以下,参照图4(A)~图5,对采用了本发明而得到的实施方式涉及的电子模块的制造方法进行说明。
本实施方式涉及的电子模块的制造方法包含准备半导体装置100的步骤。半导体装置100可以形成为已经说明的任何机构。
本实施方式涉及的电子模块的制造方法包含准备布线基板40的步骤(参照图4(A))。布线基板40也可以包含基底基板42与布线图案44。布线图案44包含电连接部45。电连接部45是布线图案44中用于与其他部件的电连接的部分。布线基板40以布线图案44的形成了电连接部45的面为凸曲面的方式翘曲。换言之,布线基板40以对向于半导体装置100的面(装载半导体装置100的面)为凸曲面的方式翘曲。而且,在进行将半导体装置100装载到布线基板40的步骤之际,布线基板40可以形成为如上所述翘曲的形状。在基底基板42为刚性基板时,通过基底基板42自身的翘曲,而使布线基板40成为上述那样翘曲的形状。另外,在基底基板42为挠性基板时,通过将半导体装置100装载到布线基板40的步骤中支撑布线基板40的支撑工具,而使布线基板40成为上述那样翘曲的形状。
基底基板42的材料并未特别限定,可以是有机系或无机系的任何一种材料,也可以是由这些的复合结构构成的材料。作为基底基板42,可以利用由无机系的材料形成的基板。此时,基底基板42可以是陶瓷基板或玻璃基板。在基底基板42为玻璃基板时,布线基板40可以是电光学面板(液晶面板·场致发光面板等)的一部分。布线图案44可以由ITO(IndiumTin Oxide)、Cr、Al等的金属膜,金属化合物膜或者这些的复合膜形成。此时,布线图案44可以与驱动液晶的电极(扫描电极、信号电极、对置电极等)电连接。或者,基底基板42可以是由聚对苯二甲酸乙二醇酯(PET:polyethylene terephthalate)构成的基板或薄膜。或者,作为基底基板42,也可以使用由聚酰亚胺树脂构成的挠性基板。作为挠性基板,可以使用用于FPC(Flexible Printed Circuit)或TAB(Tape Automated Bonding)技术的带子(tape)。此时,布线图案44例如可以层叠铜(Cu)、铬(Cr)、钛(Ti)、镍(Ni)、钛钨(Ti-W)中的任一种而形成。还有,布线图案44可以形成为其一部分通过基底基板42的内侧。
本实施方式涉及的电子模块的制造方法包含将半导体装置100装载到布线基板40的步骤。通过该步骤,使布线30中的与树脂突起20重叠(overlap)的部分、和布线图案44的电连接部45接触并电连接。将半导体装置100装载到布线基板40的方法并未特别限定,参照图4(A)~图4(C),对将半导体装置100装载到布线基板40的方法的一例进行说明。首先,如图4(A)所示,将半导体装置100配置在布线基板40上,进行对位,以使半导体装置100的布线30(树脂突起20)与布线基板40的布线图案44(电连接部45)对向。然后,如图4(B)所示,按压半导体装置100与布线基板40,使布线30与布线图案44(电连接部45)接触。此时,可以通过半导体芯片10与布线基板40挤压树脂突起20,使树脂突起20弹性变形。由此,由于可以通过树脂突起20的弹性力来按压布线30与电连接部45(布线图案44),故可以提供电连接可靠性高的电子模块。
而且,在本步骤中,可以预先在半导体装置100与布线基板40之间设置粘接剂50。如图4(A)所示,粘接剂50也可以设置在布线基板40上。粘接剂50例如可以利用薄膜状的粘接剂。粘接剂50可以是绝缘性的粘接剂。而且,可以在将半导体装置100装载到布线基板40的步骤之后,使粘接剂50固化而形成粘接层52。通过粘接层52可以维持半导体芯片10与布线基板40的间隔。即,通过粘接层52可以维持树脂突起20弹性变形后的状态。例如通过在挤压树脂突起20的状态下使粘接剂50固化,从而可以维持树脂突起20弹性变形的状态。
通过以上的步骤、或者经过检查步骤或切断步骤,可以制造电子模块1。
如之前所说明的,在半导体装置100中,树脂突起20形成为:越是远离半导体芯片10的已形成了电极14的面的中央而配置的树脂突起,其高度越高。由此,即使在布线基板40翘曲为形成了电连接部45的面为凸曲面的情况下,也能够制造可靠性高的电子模块。以下,对此详细叙述。
布线基板有时产生翘曲。例如,在真空吸附布线基板来搬运的步骤中、或通过真空吸附而将布线基板固定到接合台的步骤中,施加不均匀的力,布线基板会产生翘曲。另外,虽然有布线基板被加热的情况,但此时布线基板的表背面的组成的不均匀成为原因,布线基板产生翘曲。特别是,在一面上形成有电连接部45的布线基板40中,会以形成了电连接部45的面成为凸曲面的方式产生翘曲。即使该情况下,如果使布线30与电连接部45接触,也能够制造可靠性高的电子模块。
但是,如之前所说明的,在半导体装置100中,树脂突起20形成为:越是远离半导体芯片10的已形成了电极14的面的中央而配置的树脂突起,其高度越高。由此,可以使连结树脂突起20的上表面而形成的面,变为与布线基板40的面(已形成了电连接部45的面)类似的形状。因此,能够使全部布线30与电连接部45接触。
因此,根据本实施方式涉及的电子模块的制造方法,即使在利用了翘曲为形成了电连接部45的面为凸曲面的布线基板40的情况下,也能制造可靠性高的电子模块。因此,由于无需按照不产生翘曲的方式来处理布线基板40,故能高效地制造电子模块。另外,根据半导体装置100,可以提供一种能够安装到产生翘曲的布线基板的、安装性高的半导体装置。
此外,即使在半导体装置100的半导体芯片10翘曲为形成了电极14的面为凸曲面的情况下(参照图6(A)),通过调整树脂突起20的高度,从而能使连结树脂突起20的上表面而形成的面,成为与布线基板40的面(形成了电连接部45的面)类似的形状。因此,可以使全部布线30与电连接部45接触,可以制造可靠性高的电子模块。
电子模块1包含半导体装置100。电子模块1包含具有布线图案44的布线基板40。半导体装置100是被装载到布线基板40而成的。半导体装置100,按照使布线30中的与树脂突起20重叠的部分、和布线图案44的电连接部45接触并电连接的方式,而被装载到布线基板40。布线基板40翘曲为已形成了电连接部45的面为凸曲面。
根据电子模块1,无论布线基板40是否弯曲,都可以提供通过适当的负荷来按压全部的布线30和电连接部45的电子模块。即,根据电子模块1,可以提供电连接可靠性高的电子模块。
在图5中,作为电子模块1的一例,示出了显示设备1000。显示设备1000例如可以是液晶显示设备或EL(Electrical Luminescence)显示设备。而且,半导体装置100可以是控制显示设备1000的驱动器IC。
(变形例)
以下,对采用了本发明而得到的实施方式的变形例进行说明。
图6(A)及图6(B)是对采用了本发明而得到的实施方式的变形例涉及的半导体装置进行说明用的图。而且,图6(A)是半导体装置101的剖面图。此外,图6(B)是表示半导体装置101被安装到平坦的布线基板41时的样子的图。
本实施方式涉及的半导体装置包含半导体芯片11。如图6(A)所示,半导体芯片11翘曲为已形成了电极14的面为凸曲面。即,半导体芯片11翘曲为已形成了电极14的面的中央部比其端部突出。此时,半导体芯片11的已形成了电极14的面的边弯曲成:中央部比其端部向已形成了电极14的面所朝向的方向突出。另外,在半导体芯片11的已形成了电极14的面的外形为长方形的情况下,半导体芯片11也可以弯曲为其两条长边的中央部突出。
本实施方式涉及的半导体装置包含树脂突起20。树脂突起20形成为:越是远离半导体芯片11的已形成了电极14的面的中央而配置的树脂突起,其高度越高。此时,树脂突起20可以形成为其上端配置于一个平面上。
本实施方式涉及的半导体装置包含布线30。布线30与电极14电连接而成。布线30可以形成为到达树脂突起20上。
半导体装置101可以形成以上的构成。根据半导体装置101,可以提供安装性优良的半导体装置。
一般,半导体芯片有时会产生翘曲。作为其原因,认为例如是通过仅在半导体芯片的一面形成集成电路12或钝化膜,从而组成在半导体芯片的表背面不同的缘故。该情况下,若使全部树脂突起20为相同高度,则树脂突起20上端的位置会产生偏差。在树脂突起20上端的位置产生偏差,的情况下,难以将半导体装置安装到平坦的布线基板41。
然而,在半导体装置101中,树脂突起20形成为:越是远离半导体芯片11的已形成了电极14的面的中央而配置的树脂突起,其高度越高。由此,在半导体芯片11翘曲为形成了电极14的面为凸曲面的情况下,可以减轻树脂突起20上端的位置的偏差。即,即使在半导体芯片11翘曲的情况下,也可以使连结树脂突起20的上端面(布线30)而形成的平面,成为近似于平坦面的形状。因此,即使在半导体芯片11翘曲的情况下,如图6(B)所示,也可以提供一种能安装到平坦的布线基板41上的、安装性良好的半导体装置。
另外,在形成为将树脂突起20配置到一个虚拟平面上的情况下,由于相对于平坦布线基板41的电连接部,可以以均匀的负荷按压全部布线30,故可以提供安装性更优良的半导体装置。
此外,本发明并未限于上述实施方式,能够进行各种变更。例如,本发明包含与实施方式中说明过的构成实质上相同的构成(例如功能、方法及结果相同的构成、或者目的及效果相同的构成)。再有,本发明包含置换了不是实施方式中说明过的构成的本质部分的构成。还有,本发明包含可以与实施方式中说明过的构成达到相同作用效果的构成、或达到相同目的的构成。进一步,本发明还包括在实施方式中说明过的构成中附加了公知技术的构成。
Claims (9)
1.一种半导体装置,包括:
半导体芯片,其具有电极;
多个树脂突起,其形成于所述半导体芯片的已形成了所述电极的面;和
布线,其与所述电极电连接而成,并形成于任一个所述树脂突起上;
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高。
2.根据权利要求1所述的半导体装置,其中,所述半导体芯片按照已形成了所述电极的面成为凸曲面的方式翘曲。
3.一种电子模块,包括:
半导体装置,其包括具有电极的半导体芯片、在所述半导体芯片的已形成了所述电极的面形成的多个树脂突起与所述电极电连接而成并形成于任一个所述树脂突起上的布线;和
布线基板,其装载了所述半导体装置并具有布线图案,
所述半导体装置,按照使所述布线中的与所述树脂突起重叠的部分与所述布线图案的电连接部接触并电连接的方式,被装载于所述布线基板,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高,
所述布线基板按照已形成了所述电连接部的面成为凸曲面的方式翘曲。
4.根据权利要求3所述的电子模块,其中,所述半导体芯片按照已形成了所述电极的面成为凸曲面的方式翘曲。
5.一种电子模块,包括:
半导体装置,其包括具有电极的半导体芯片、于所述半导体芯片的已形成了所述电极的面形成的多个树脂突起与所述电极电连接而成并形成于任一个所述树脂突起上的布线;和
布线基板,其装载了所述半导体装置并具有布线图案;
所述半导体装置,按照使所述布线中的与所述树脂突起重叠的部分与所述布线图案的电连接部接触并电连接的方式,被装载在所述布线基板,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高,
所述半导体芯片按照已形成了所述电极的面成为凸曲面的方式翘曲。
6.一种电子模块的制造方法,包括:
准备半导体装置的步骤,该半导体装置包括具有电极的半导体芯片、于所述半导体芯片的已形成了所述电极的面形成的多个树脂突起、与所述电极电连接而成并形成于任一个所述树脂突起上的布线;
准备布线基板的步骤,该布线基板具有布线图案,并翘曲使得形成了所述布线图案的电连接部的面为凸曲面;和
将所述半导体装置装载到所述布线基板,使所述布线中的与所述树脂突起重叠的部分与所述电连接部接触并电连接的步骤,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高。
7.根据权利要求6所述的电子模块的制造方法,其中,所述半导体芯片按照已形成了所述电极的面成为凸曲面的方式翘曲。
8.一种电子模块的制造方法,包括:
准备半导体装置的步骤,该半导体装置包括具有电极的半导体芯片、于所述半导体芯片的已形成了所述电极的面形成的多个树脂突起、与所述电极电连接而成并形成于任一个所述树脂突起上的布线;
准备具有布线图案的布线基板的步骤;和
将所述半导体装置装载到所述布线基板,使所述布线中的与所述树脂突起重叠的部分与所述布线图案的电连接部接触并电连接的步骤,
所述半导体芯片按照已形成了所述电极的面成为凸曲面的方式翘曲,
所述树脂突起形成为:越是远离所述半导体芯片的已形成了所述电极的面的中央而配置的树脂突起,其高度越高。
9.一种半导体装置,包括:
半导体芯片,其具有电极;
第一树脂突起,其形成于所述半导体芯片的已形成了所述电极的面;
第二树脂突起,其配置于所述半导体芯片的已形成了所述电极的面,且配置于比所述第一树脂突起还远离所述半导体芯片的已形成了所述电极的面的中央的位置;和
布线,其与所述电极电连接而成,至少形成于所述第一或第二树脂突起的任一个之上,
所述第二树脂突起的高度比所述第一树脂突起的高度高。
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JP3349058B2 (ja) * | 1997-03-21 | 2002-11-20 | ローム株式会社 | 複数のicチップを備えた半導体装置の構造 |
US5936304A (en) * | 1997-12-10 | 1999-08-10 | Intel Corporation | C4 package die backside coating |
JP2004253544A (ja) | 2003-02-19 | 2004-09-09 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4096774B2 (ja) * | 2003-03-24 | 2008-06-04 | セイコーエプソン株式会社 | 半導体装置、電子デバイス、電子機器、半導体装置の製造方法及び電子デバイスの製造方法 |
JP2004335660A (ja) | 2003-05-06 | 2004-11-25 | Sony Corp | 半導体装置及びその製造方法、並びに配線基板及びその製造方法 |
JP2005101527A (ja) * | 2003-08-21 | 2005-04-14 | Seiko Epson Corp | 電子部品の実装構造、電気光学装置、電子機器及び電子部品の実装方法 |
JP4218622B2 (ja) | 2003-10-09 | 2009-02-04 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-08-01 JP JP2005222747A patent/JP2007042736A/ja active Pending
-
2006
- 2006-07-27 US US11/493,610 patent/US7582967B2/en not_active Expired - Fee Related
- 2006-08-01 TW TW095128148A patent/TW200715512A/zh unknown
- 2006-08-01 CN CNA2006101084870A patent/CN1909224A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101924058B (zh) * | 2008-11-12 | 2012-08-08 | 台湾积体电路制造股份有限公司 | 用于减小芯片翘曲度的方法 |
Also Published As
Publication number | Publication date |
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TW200715512A (en) | 2007-04-16 |
US20070023903A1 (en) | 2007-02-01 |
JP2007042736A (ja) | 2007-02-15 |
US7582967B2 (en) | 2009-09-01 |
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