CH530818A - Verfahren zum Züchten von langgestreckten einkristallinen Körpern und Einrichtung zur Durchführung dieses Verfahrens - Google Patents
Verfahren zum Züchten von langgestreckten einkristallinen Körpern und Einrichtung zur Durchführung dieses VerfahrensInfo
- Publication number
- CH530818A CH530818A CH793368A CH793368A CH530818A CH 530818 A CH530818 A CH 530818A CH 793368 A CH793368 A CH 793368A CH 793368 A CH793368 A CH 793368A CH 530818 A CH530818 A CH 530818A
- Authority
- CH
- Switzerland
- Prior art keywords
- melt
- crucible
- capillary
- seed crystal
- crystal
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims description 86
- 238000000034 method Methods 0.000 title claims description 38
- 230000008569 process Effects 0.000 title description 14
- 239000000155 melt Substances 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 230000009471 action Effects 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 239000012768 molten material Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 230000000750 progressive effect Effects 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 claims 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 230000005855 radiation Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 210000001787 dendrite Anatomy 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
- Y10S264/19—Inorganic fiber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64183767A | 1967-05-29 | 1967-05-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH530818A true CH530818A (de) | 1972-11-30 |
Family
ID=24574051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH793368A CH530818A (de) | 1967-05-29 | 1968-05-29 | Verfahren zum Züchten von langgestreckten einkristallinen Körpern und Einrichtung zur Durchführung dieses Verfahrens |
Country Status (12)
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3650702A (en) * | 1970-04-15 | 1972-03-21 | Gen Motors Corp | Crystal growth of tetragonal germanium dioxide from a flux |
| US3687633A (en) * | 1970-08-28 | 1972-08-29 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
| US3765843A (en) * | 1971-07-01 | 1973-10-16 | Tyco Laboratories Inc | Growth of tubular crystalline bodies |
| BE791024A (fr) * | 1971-11-08 | 1973-05-07 | Tyco Laboratories Inc | Procede pour developper des cristaux a partir d'un bain d'une matiere |
| US4012213A (en) * | 1973-06-14 | 1977-03-15 | Arthur D. Little, Inc. | Apparatus for forming refractory fibers |
| US3998686A (en) * | 1975-03-10 | 1976-12-21 | Corning Glass Works | Sapphire growth from the melt using porous alumina raw batch material |
| US4082423A (en) * | 1976-08-19 | 1978-04-04 | The United States Of America As Represented By The Secretary Of The Navy | Fiber optics cable strengthening method and means |
| US4158038A (en) * | 1977-01-24 | 1979-06-12 | Mobil Tyco Solar Energy Corporation | Method and apparatus for reducing residual stresses in crystals |
| US4118197A (en) * | 1977-01-24 | 1978-10-03 | Mobil Tyco Solar Energy Corp. | Cartridge and furnace for crystal growth |
| US4269652A (en) * | 1978-11-06 | 1981-05-26 | Allied Chemical Corporation | Method for growing crystalline materials |
| US4267010A (en) * | 1980-06-16 | 1981-05-12 | Mobil Tyco Solar Energy Corporation | Guidance mechanism |
| US5336360A (en) * | 1986-08-18 | 1994-08-09 | Clemson University | Laser assisted fiber growth |
| US5126200A (en) * | 1986-08-18 | 1992-06-30 | E. I. Du Pont De Nemours And Company | Laser assisted fiber growth |
| US5114528A (en) * | 1990-08-07 | 1992-05-19 | Wisconsin Alumni Research Foundation | Edge-defined contact heater apparatus and method for floating zone crystal growth |
| US5370078A (en) * | 1992-12-01 | 1994-12-06 | Wisconsin Alumni Research Foundation | Method and apparatus for crystal growth with shape and segregation control |
| US5778960A (en) * | 1995-10-02 | 1998-07-14 | General Electric Company | Method for providing an extension on an end of an article |
| US5904201A (en) * | 1996-01-18 | 1999-05-18 | General Electric Company | Solidification of an article extension from a melt using a ceramic mold |
| US5676191A (en) * | 1996-06-27 | 1997-10-14 | General Electric Company | Solidification of an article extension from a melt using an integral mandrel and ceramic mold |
| US5673744A (en) * | 1996-06-27 | 1997-10-07 | General Electric Company | Method for forming an article extension by melting of a mandrel in a ceramic mold |
| US5673745A (en) * | 1996-06-27 | 1997-10-07 | General Electric Company | Method for forming an article extension by melting of an alloy preform in a ceramic mold |
| US5743322A (en) * | 1996-06-27 | 1998-04-28 | General Electric Company | Method for forming an article extension by casting using a ceramic mold |
| JP4059639B2 (ja) * | 2001-03-14 | 2008-03-12 | 株式会社荏原製作所 | 結晶の引上装置 |
| RU2005136369A (ru) * | 2003-04-23 | 2006-06-27 | Стелла Кемифа Корпорейшн (Jp) | Устройство для получения кристалла фторида |
| US7348076B2 (en) * | 2004-04-08 | 2008-03-25 | Saint-Gobain Ceramics & Plastics, Inc. | Single crystals and methods for fabricating same |
| CN101194141B (zh) * | 2005-06-10 | 2013-05-22 | 圣戈本陶瓷及塑料股份有限公司 | 透明陶瓷复合物及其制造方法 |
| RU2299280C1 (ru) * | 2006-04-18 | 2007-05-20 | Общество с ограниченной ответственностью "Профиль-С" (ООО "Профиль-С") | Способ получения профилированных кристаллов тугоплавких соединений |
| KR101498520B1 (ko) * | 2006-09-22 | 2015-03-04 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | C-플레인 사파이어 장치 |
| US7682452B2 (en) * | 2007-04-09 | 2010-03-23 | Sapphire Systems Inc. | Apparatus and methods of growing void-free crystalline ceramic products |
| US20090130415A1 (en) * | 2007-11-21 | 2009-05-21 | Saint-Gobain Ceramics & Plastics, Inc. | R-Plane Sapphire Method and Apparatus |
| US11047650B2 (en) | 2017-09-29 | 2021-06-29 | Saint-Gobain Ceramics & Plastics, Inc. | Transparent composite having a laminated structure |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2809135A (en) * | 1952-07-22 | 1957-10-08 | Sylvania Electric Prod | Method of forming p-n junctions in semiconductor material and apparatus therefor |
| US2944875A (en) * | 1953-07-13 | 1960-07-12 | Raytheon Co | Crystal-growing apparatus and methods |
| NL237834A (enrdf_load_stackoverflow) * | 1958-04-09 | |||
| NL121446C (enrdf_load_stackoverflow) * | 1958-11-17 | |||
| NL238924A (enrdf_load_stackoverflow) * | 1959-05-05 | |||
| US3212858A (en) * | 1963-01-28 | 1965-10-19 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
-
1967
- 1967-05-29 US US641837A patent/US3471266A/en not_active Expired - Lifetime
-
1968
- 1968-05-24 GB GB24955/68A patent/GB1195947A/en not_active Expired
- 1968-05-28 NO NO2081/68A patent/NO123924B/no unknown
- 1968-05-28 DK DK247968AA patent/DK127040B/da not_active IP Right Cessation
- 1968-05-28 SE SE07105/68A patent/SE338558B/xx unknown
- 1968-05-29 ES ES354476A patent/ES354476A1/es not_active Expired
- 1968-05-29 CH CH793368A patent/CH530818A/de not_active IP Right Cessation
- 1968-05-29 BR BR199425/68A patent/BR6899425D0/pt unknown
- 1968-05-29 BE BE715819D patent/BE715819A/xx not_active IP Right Cessation
- 1968-05-29 NL NL6807578A patent/NL6807578A/xx unknown
- 1968-05-29 DE DE1769481A patent/DE1769481C3/de not_active Expired
- 1968-07-19 FR FR1581098D patent/FR1581098A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1769481C3 (de) | 1974-01-03 |
| US3471266A (en) | 1969-10-07 |
| NO123924B (enrdf_load_stackoverflow) | 1972-02-07 |
| NL6807578A (enrdf_load_stackoverflow) | 1968-12-02 |
| DE1769481B2 (de) | 1973-05-17 |
| GB1195947A (en) | 1970-06-24 |
| FR1581098A (enrdf_load_stackoverflow) | 1969-09-12 |
| BE715819A (fr) | 1968-11-29 |
| SE338558B (enrdf_load_stackoverflow) | 1971-09-13 |
| DE1769481A1 (de) | 1970-12-23 |
| DK127040B (da) | 1973-09-17 |
| ES354476A1 (es) | 1969-11-01 |
| BR6899425D0 (pt) | 1973-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUE | Assignment |
Owner name: SAPHIKON, INC. |
|
| PL | Patent ceased |