NL121446C - - Google Patents

Info

Publication number
NL121446C
NL121446C NL121446DA NL121446C NL 121446 C NL121446 C NL 121446C NL 121446D A NL121446D A NL 121446DA NL 121446 C NL121446 C NL 121446C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL121446C publication Critical patent/NL121446C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL121446D 1958-11-17 NL121446C (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES60633A DE1141977B (de) 1958-11-17 1958-11-17 Verfahren zum Ziehen von duennen, im wesentlichen einkristallinen Halbleiterstaeben aus einer Schmelze

Publications (1)

Publication Number Publication Date
NL121446C true NL121446C (enrdf_load_stackoverflow)

Family

ID=7494258

Family Applications (2)

Application Number Title Priority Date Filing Date
NL121446D NL121446C (enrdf_load_stackoverflow) 1958-11-17
NL244873D NL244873A (enrdf_load_stackoverflow) 1958-11-17

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL244873D NL244873A (enrdf_load_stackoverflow) 1958-11-17

Country Status (6)

Country Link
US (1) US3078151A (enrdf_load_stackoverflow)
CH (1) CH380085A (enrdf_load_stackoverflow)
DE (1) DE1141977B (enrdf_load_stackoverflow)
FR (1) FR1237642A (enrdf_load_stackoverflow)
GB (1) GB916390A (enrdf_load_stackoverflow)
NL (2) NL244873A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3240568A (en) * 1961-12-20 1966-03-15 Monsanto Co Process and apparatus for the production of single crystal compounds
US3291650A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Control of crystal size
US3291574A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Semiconductor crystal growth from a domical projection
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
NL6917398A (enrdf_load_stackoverflow) * 1969-03-18 1970-09-22
BE791024A (fr) * 1971-11-08 1973-05-07 Tyco Laboratories Inc Procede pour developper des cristaux a partir d'un bain d'une matiere
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
DE2454092A1 (de) * 1974-11-14 1976-05-26 Wacker Chemitronic Verfahren zum quantitativen entfernen von restschmelzen
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
GB1577413A (en) * 1976-03-17 1980-10-22 Metals Research Ltd Growth of crystalline material
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
JPH01192789A (ja) * 1988-01-27 1989-08-02 Toshiba Corp 結晶引上げ装置及び結晶引上げ方法
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
BE528916A (enrdf_load_stackoverflow) * 1953-05-18
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
DE1044768B (de) * 1954-03-02 1958-11-27 Siemens Ag Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus

Also Published As

Publication number Publication date
FR1237642A (fr) 1960-07-29
CH380085A (de) 1964-07-31
GB916390A (en) 1963-01-23
NL244873A (enrdf_load_stackoverflow)
DE1141977B (de) 1963-01-03
US3078151A (en) 1963-02-19

Similar Documents

Publication Publication Date Title
AT214638B (enrdf_load_stackoverflow)
AT217439B (enrdf_load_stackoverflow)
AT215747B (enrdf_load_stackoverflow)
DE1202998C2 (enrdf_load_stackoverflow)
AT213316B (enrdf_load_stackoverflow)
AT213446B (enrdf_load_stackoverflow)
AT215751B (enrdf_load_stackoverflow)
AT213908B (enrdf_load_stackoverflow)
DE1099348C2 (enrdf_load_stackoverflow)
AT216227B (enrdf_load_stackoverflow)
AT213472B (enrdf_load_stackoverflow)
AT213670B (enrdf_load_stackoverflow)
AT217982B (enrdf_load_stackoverflow)
AT213337B (enrdf_load_stackoverflow)
AT215738B (enrdf_load_stackoverflow)
AT213557B (enrdf_load_stackoverflow)
AT213558B (enrdf_load_stackoverflow)
AT216612B (enrdf_load_stackoverflow)
AT213631B (enrdf_load_stackoverflow)
AT216831B (enrdf_load_stackoverflow)
AT216749B (enrdf_load_stackoverflow)
AT216771B (enrdf_load_stackoverflow)
AT214348B (enrdf_load_stackoverflow)
AT214270B (enrdf_load_stackoverflow)
BE572738A (enrdf_load_stackoverflow)