NL107897C - - Google Patents

Info

Publication number
NL107897C
NL107897C NL107897DA NL107897C NL 107897 C NL107897 C NL 107897C NL 107897D A NL107897D A NL 107897DA NL 107897 C NL107897 C NL 107897C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL107897C publication Critical patent/NL107897C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C9/00—Moulds or cores; Moulding processes
    • B22C9/22—Moulds for peculiarly-shaped castings
    • B22C9/24—Moulds for peculiarly-shaped castings for hollow articles
    • B22C9/26—Moulds for peculiarly-shaped castings for hollow articles for ribbed tubes; for radiators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL107897D 1953-05-18 NL107897C (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US327484XA 1953-05-18 1953-05-18

Publications (1)

Publication Number Publication Date
NL107897C true NL107897C (enrdf_load_stackoverflow)

Family

ID=21866605

Family Applications (1)

Application Number Title Priority Date Filing Date
NL107897D NL107897C (enrdf_load_stackoverflow) 1953-05-18

Country Status (5)

Country Link
BE (1) BE528916A (enrdf_load_stackoverflow)
CH (1) CH327484A (enrdf_load_stackoverflow)
DE (1) DE1101775B (enrdf_load_stackoverflow)
GB (1) GB754767A (enrdf_load_stackoverflow)
NL (1) NL107897C (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
BE562704A (enrdf_load_stackoverflow) * 1956-11-28
NL225605A (enrdf_load_stackoverflow) * 1957-03-07 1900-01-01
NL226823A (enrdf_load_stackoverflow) * 1957-04-15 1900-01-01
NL112556C (enrdf_load_stackoverflow) * 1957-06-25 1900-01-01
DE1158040B (de) * 1957-11-21 1963-11-28 Int Standard Electric Corp Vorrichtung zum Ziehen von Einkristallen aus Halbleitermaterial
NL121446C (enrdf_load_stackoverflow) * 1958-11-17
NL238923A (enrdf_load_stackoverflow) * 1959-05-05
NL238924A (enrdf_load_stackoverflow) * 1959-05-05
DE1251721B (de) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration
GB1093774A (en) * 1964-08-04 1967-12-06 Nippon Electric Co Improvements in or relating to crystal processing
US4612082A (en) * 1982-12-02 1986-09-16 Texas Instruments Incorporated Arsenic cell stabilization valve for gallium arsenide in-situ compounding
US4522791A (en) * 1982-12-02 1985-06-11 Texas Instruments Incorporated Arsenic cell stabilization valve for gallium arsenide in-situ compounding
GB2147223A (en) * 1983-10-01 1985-05-09 Stc Plc Semiconductor substrates
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973231C (de) * 1953-01-20 1959-12-24 Telefunken Gmbh Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze

Also Published As

Publication number Publication date
DE1101775B (de) 1961-03-09
CH327484A (fr) 1958-01-31
BE528916A (enrdf_load_stackoverflow)
GB754767A (en) 1956-08-15

Similar Documents

Publication Publication Date Title
AT193854B (enrdf_load_stackoverflow)
AT191364A (enrdf_load_stackoverflow)
AT190646B (enrdf_load_stackoverflow)
BE517130A (enrdf_load_stackoverflow)
AT193331B (enrdf_load_stackoverflow)
AT191026B (enrdf_load_stackoverflow)
AT191140B (enrdf_load_stackoverflow)
AT192380B (enrdf_load_stackoverflow)
AT191238B (enrdf_load_stackoverflow)
AT199365B (enrdf_load_stackoverflow)
AT194372B (enrdf_load_stackoverflow)
AT194824B (enrdf_load_stackoverflow)
AT195162B (enrdf_load_stackoverflow)
AT195400B (enrdf_load_stackoverflow)
AT196785B (enrdf_load_stackoverflow)
AT197771B (enrdf_load_stackoverflow)
AT199317B (enrdf_load_stackoverflow)
AT194074B (enrdf_load_stackoverflow)
AT205166B (enrdf_load_stackoverflow)
AT213751B (enrdf_load_stackoverflow)
BE425967A (enrdf_load_stackoverflow)
BE516823A (enrdf_load_stackoverflow)
BE324631A (enrdf_load_stackoverflow)
BE326981A (enrdf_load_stackoverflow)
BE517734A (enrdf_load_stackoverflow)